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Characterization And Modeling Of Hot Carrier Degradation In Sub Micron Nmosfets
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Book Synopsis Characterization and Modeling of Hot-carrier Degradation in Sub-micron NMOSFETs by : Manish Prabhakar Pagey
Download or read book Characterization and Modeling of Hot-carrier Degradation in Sub-micron NMOSFETs written by Manish Prabhakar Pagey and published by . This book was released on 2002 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis CMOS RF Modeling, Characterization and Applications by : M. Jamal Deen
Download or read book CMOS RF Modeling, Characterization and Applications written by M. Jamal Deen and published by World Scientific. This book was released on 2002 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.
Book Synopsis Characterization Methods for Submicron MOSFETs by : Hisham Haddara
Download or read book Characterization Methods for Submicron MOSFETs written by Hisham Haddara and published by Springer. This book was released on 1995 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) is a key component in modern microelectronics. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements making the task of MOSFET characterization increasingly crucial, as well as more difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples. It was thus unavoidable to develop new models and new characterization methods, or at least adapt the existing ones to cope with the special nature of these new phenomena. Characterization Methods for Submicron MOSFETs deals with techniques which show high potential for characterization of submicron devices. Throughout the book the focus is on the adaptation of such methods to resolve measurement problems relevant to VLSI devices and new materials, especially Silicon-on-Insulator (SOI). Characterization Methods for Submicron MOSFETs was written to provide help to device engineers and researchers to enable them to cope with the challenges they face. Without adequate device characterization, new physical phenomena and new types of defects or damage may not be well identified or dealt with, leading to an undoubted obstruction of the device development cycle. Audience: Researchers and graduate students familiar with MOS device physics, working in the field of device characterization and modeling. Also intended for industrial engineers working in device development, seeking to enlarge their understanding of measurement methods. The book additionally addresses device-based characterization for material and process engineers and for circuit designers. A valuable reference that may be used as a text for advanced courses on the subject.
Book Synopsis Advances in Thin Films, Nanostructured Materials, and Coatings by : Alexander D. Pogrebnjak
Download or read book Advances in Thin Films, Nanostructured Materials, and Coatings written by Alexander D. Pogrebnjak and published by Springer. This book was released on 2019-02-08 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book highlights the latest advances in chemical and physical methods for thin-film deposition and surface engineering, including ion- and plasma-assisted processes, focusing on explaining the synthesis/processing–structure–properties relationship for a variety of thin-film systems. It covers topics such as advances in thin-film synthesis; new thin-film materials: diamond-like films, granular alloys, high-entropy alloys, oxynitrides, and intermetallic compounds; ultra-hard, wear- and oxidation-resistant and multifunctional coatings; superconducting, magnetic, semiconducting, and dielectric films; electrochemical and electroless depositions; thin-film characterization and instrumentation; and industrial applications.
Author :Electrochemical society. Meeting Publisher :The Electrochemical Society ISBN 13 :1566778654 Total Pages :950 pages Book Rating :4.5/5 (667 download)
Book Synopsis Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 by : Electrochemical society. Meeting
Download or read book Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 written by Electrochemical society. Meeting and published by The Electrochemical Society. This book was released on 2011 with total page 950 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions contains the peer-reviewed full length papers of the International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics held May 1-6, 2011 in Montreal as a part of the 219th Meeting of The Electrochemical Society. The papers address a very diverse range of topics. In addition to the deposition and characterization of the dielectrics, more specific topics addressed by the papers include applications, device characterization and reliability, interface states, interface traps, defects, transistor and gate oxide studies, and modeling.
Book Synopsis Modeling and Simulation OfpMOSFET Hot-carrier Degradation in Very Large CMOS Circuits by : Weishi Sun
Download or read book Modeling and Simulation OfpMOSFET Hot-carrier Degradation in Very Large CMOS Circuits written by Weishi Sun and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The goals of the research work presented in this thesis are to model submicron pMOS transistor hot-carrier degradation and to develop a fast reliability simulation tool for hot-carrier reliability analysis of CMOS VLSI circuits. This simulator should be able to handle very large submicrometer circuits accurately and efficiently. As device sizes shrink into the submicron region, pMOS transistor hot-carrier degradation becomes increasingly more important. There has not, however, been a widely accepted model for pMOS transistor hot-carrier degradation unlike that for nMOS transistors. Existing reliability simulations tools are primarily based on transistor level simulation and, therefore, can not handle large circuits efficiently. Using the fast-timing-based reliability simulator, ILLIADS-R, and the empirical model developed based on our experimental results, hot-carrier reliability can be well predicted. ILLIADS-R also serves as an integral part of the hierarchical design-for-reliability system. A new hot-carrier degradation model is developed for submicron pMOS transistors. Using this model, the pMOS transistor hot-carrier degradation can be predicted based on the total injected charge into the gate oxide region and the initial gate current under normal operating condition. This model is integrated into the fast-timing-based reliability simulation tool, ILLIADS-R. The simulation results demonstrate that ILLIADS-R outperforms the existing reliability simulator BERT in terms of simulation speed with a comparable accuracy. Also studied are the pMOS transistor subthreshold leakage characteristics as a function of hot-carrier stress conditions. It is shown that subthreshold leakage current is a future limit to the pMOS device lifetime.
Book Synopsis Hot Carrier Degradation in Semiconductor Devices by : Tibor Grasser
Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
Book Synopsis Modelling of the Hot-carrier Degradation Behaviour of Submicron NMOSFETS Making Use of Highresolution Measurements by : Raf Dreesen
Download or read book Modelling of the Hot-carrier Degradation Behaviour of Submicron NMOSFETS Making Use of Highresolution Measurements written by Raf Dreesen and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Intelligent Nanomaterials by : Ashutosh Tiwari
Download or read book Intelligent Nanomaterials written by Ashutosh Tiwari and published by John Wiley & Sons. This book was released on 2016-10-11 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: Overall, this book presents a detailed and comprehensive overview of the state-of-the-art development of different nanoscale intelligent materials for advanced applications. Apart from fundamental aspects of fabrication and characterization of nanomaterials, it also covers key advanced principles involved in utilization of functionalities of these nanomaterials in appropriate forms. It is very important to develop and understand the cutting-edge principles of how to utilize nanoscale intelligent features in the desired fashion. These unique nanoscopic properties can either be accessed when the nanomaterials are prepared in the appropriate form, e.g., composites, or in integrated nanodevice form for direct use as electronic sensing devices. In both cases, the nanostructure has to be appropriately prepared, carefully handled, and properly integrated into the desired application in order to efficiently access its intelligent features. These aspects are reviewed in detail in three themed sections with relevant chapters: Nanomaterials, Fabrication and Biomedical Applications; Nanomaterials for Energy, Electronics, and Biosensing; Smart Nanocomposites, Fabrication, and Applications.
Book Synopsis Integrated Circuit and System Design by : Enrico Macii
Download or read book Integrated Circuit and System Design written by Enrico Macii and published by Springer Science & Business Media. This book was released on 2004-09-07 with total page 926 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book constitutes the refereed proceedings of the 14th International Workshop on Power and Timing Optimization and Simulation, PATMOS 2004, held in Santorini, Greece in September 2004. The 85 revised papers presented together with abstracts of 6 invited presentations were carefully reviewed and selected from 152 papers submitted. The papers are organized in topical sections on buses and communication, circuits and devices, low power issues, architectures, asynchronous circuits, systems design, interconnect and physical design, security and safety, low-power processing, digital design, and modeling and simulation.
Book Synopsis Device and Circuit Cryogenic Operation for Low Temperature Electronics by : Francis Balestra
Download or read book Device and Circuit Cryogenic Operation for Low Temperature Electronics written by Francis Balestra and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.
Book Synopsis Hot-Carrier Effects in MOS Devices by : Eiji Takeda
Download or read book Hot-Carrier Effects in MOS Devices written by Eiji Takeda and published by Academic Press. This book was released on 1995 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject
Download or read book Essderc'98 written by and published by Atlantica Séguier Frontières. This book was released on 1998 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Very-Large-Scale Integration by : Kim Ho Yeap
Download or read book Very-Large-Scale Integration written by Kim Ho Yeap and published by BoD – Books on Demand. This book was released on 2018-02-28 with total page 161 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, a variety of topics related to Very-Large-Scale Integration (VLSI) is extensively discussed. The topics encompass the physics of VLSI transistors, the process of integrated chip design and fabrication and the applications of VLSI devices. It is intended to provide information on the latest advancement of VLSI technology to researchers, physicists as well as engineers working in the field of semiconductor manufacturing and VLSI design.
Book Synopsis Reliability Physics and Engineering by : J. W. McPherson
Download or read book Reliability Physics and Engineering written by J. W. McPherson and published by Springer Science & Business Media. This book was released on 2010-08-05 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt: All engineers could bene?t from at least one course in reliability physics and engineering. It is very likely that, starting with your very ?rst engineering po- tion, you will be asked — how long is your newly developed device expected to last? This text was designed to help you to answer this fundamentally important question. All materials and devices are expected to degrade with time, so it is very natural to ask — how long will the product last? The evidence for material/device degradation is apparently everywhere in nature. A fresh coating of paint on a house will eventually crack and peel. Doors in a new home can become stuck due to the shifting of the foundation. The new ?nish on an automobile will oxidize with time. The tight tolerances associated with ?nely meshed gears will deteriorate with time. Critical parameters associated with hi- precision semiconductor devices (threshold voltages, drive currents, interconnect resistances, capacitor leakages, etc.) will degrade with time. In order to und- stand the lifetime of the material/device, it is important to understand the reliability physics (kinetics) for each of the potential failure mechanisms and then be able to develop the required reliability engineering methods that can be used to prevent, or at least minimize the occurrence of, device failure.
Author :Sorin Cristoloveanu Publisher :Springer Science & Business Media ISBN 13 :9780792395485 Total Pages :414 pages Book Rating :4.3/5 (954 download)
Book Synopsis Electrical Characterization of Silicon-on-Insulator Materials and Devices by : Sorin Cristoloveanu
Download or read book Electrical Characterization of Silicon-on-Insulator Materials and Devices written by Sorin Cristoloveanu and published by Springer Science & Business Media. This book was released on 1995-06-30 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.
Book Synopsis Integrated Circuit and System Design by :
Download or read book Integrated Circuit and System Design written by and published by . This book was released on 2004 with total page 938 pages. Available in PDF, EPUB and Kindle. Book excerpt:
