Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Download Characterization And Modeling Of Deep Submicron Mosfets Including Frequency Effects full books in PDF, epub, and Kindle. Read online Characterization And Modeling Of Deep Submicron Mosfets Including Frequency Effects ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author : Jen Shuang Wong
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (51 download)
Download or read book Characterization and Modeling of Deep-submicron MOSFET's Including Frequency Effects written by Jen Shuang Wong and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hisham Haddara
Publisher : Springer Science & Business Media
ISBN 13 : 1461313554
Total Pages : 240 pages
Book Rating : 4.4/5 (613 download)
Download or read book Characterization Methods for Submicron MOSFETs written by Hisham Haddara and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications.
Author : Hisham Haddara
Publisher :
ISBN 13 : 9781461313564
Total Pages : 252 pages
Book Rating : 4.3/5 (135 download)
Download or read book Characterization Methods for Submicron Mosfets written by Hisham Haddara and published by . This book was released on 1996-01-31 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) is a key component in modern microelectronics. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements making the task of MOSFET characterization increasingly crucial, as well as more difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples. It was thus unavoidable to develop new models and new characterization methods, or at least adapt the existing ones to cope with the special nature of these new phenomena. Characterization Methods for Submicron MOSFETs deals with techniques which show high potential for characterization of submicron devices. Throughout the book the focus is on the adaptation of such methods to resolve measurement problems relevant to VLSI devices and new materials, especially Silicon-on-Insulator (SOI). Characterization Methods for Submicron MOSFETs was written to provide help to device engineers and researchers to enable them to cope with the challenges they face. Without adequate device characterization, new physical phenomena and new types of defects or damage may not be well identified or dealt with, leading to an undoubted obstruction of the device development cycle. Audience: Researchers and graduate students familiar with MOS device physics, working in the field of device characterization and modeling. Also intended for industrial engineers working in device development, seeking to enlarge their understanding of measurement methods. The book additionally addresses device-based characterization for material and process engineers and for circuit designers. A valuable reference that may be used as a text for advanced courses on the subject.
Author : Saurabh Sirohi
Publisher :
ISBN 13 :
Total Pages : 198 pages
Book Rating : 4.:/5 (635 download)
Download or read book Experiments and Modeling of High-frequency Noise in Deep Submicron MOSFETs written by Saurabh Sirohi and published by . This book was released on 2005 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Morin Dehan
Publisher : Presses univ. de Louvain
ISBN 13 : 9782930344393
Total Pages : 238 pages
Book Rating : 4.3/5 (443 download)
Download or read book Characterization and Modeling of SOI RF Integrated Components written by Morin Dehan and published by Presses univ. de Louvain. This book was released on 2003 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: The boom of mobile communications leads to an increasing request of low cost and low power mixed mode integrated circuits. Maturity of SOI technology, and recent progresses of MOSFET's microwave performances, explain the success of silicon as compared to III-V technologies for low-cost multigigahertz analog applications. The design of efficient circuits requires accurate, wide-band models for both active and passive elements. Within this frame, passive and active components fabricated in SOI technologies have been studied. Various topologies of integrated transmission lines, like Coplanar Waveguides or thin film microstrip lines, have been analyzed. Also, a new physical model of integrated inductors has been developed. This model, based on a coupled line analysis of square spiral inductors, is scalable and independent of the technology used. Inductors with various spacing between strips, conductor widths, or number of turns can be simulated on different multi-layered substrates. Each layer that composes the substrate is defined using its electrical properties (permittivity, permeability, conductivity). The performances of integrated sub-micron MOSFETs are analyzed. New alternative structures of transistor (the Graded Channel MOSFET and the Dynamic Threshold MOSFET) are proposed to increase the performances of a CMOS technology for for analog, low power, low voltage, and microwave applications. They are studied from Low to High frequency. The graded channel MOSFET is an asymmetric doped channel MOSFET's which bring solutions for the problems of premature drain break-down, hot carrier effects, and threshold voltage (Vth) roll-off issues in deep submicrometer devices. The GCMOS processing is fully compatible with the conventional SOI MOSFET process flow, with no additional steps needed. The dynamic threshold voltage MOS is a MOS transistor for which the gate and the body channel are tied together. All DTMOS electrical properties can be deduced from standard MOS theory by introducing Vbs = Vgs. The main advantage of DTMOS over conventional MOS is its higher drive current at low bias conditions. To keep the body to source current as low as possible, the body bias voltage must be kept lower than 0.7 V. It seems obvious that the DTMOS transistor is an attractive component for low voltage applications.
Author : M Jamal Deen
Publisher : World Scientific
ISBN 13 : 9814488925
Total Pages : 422 pages
Book Rating : 4.8/5 (144 download)
Download or read book Cmos Rf Modeling, Characterization And Applications written by M Jamal Deen and published by World Scientific. This book was released on 2002-04-10 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.
Author : Hyungsoon Shin
Publisher :
ISBN 13 :
Total Pages : 278 pages
Book Rating : 4.:/5 (269 download)
Download or read book MOSFET modeling and drain engineering analysis for deep submicron dimensions written by Hyungsoon Shin and published by . This book was released on 1990 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Carlos Galup-Montoro
Publisher : World Scientific
ISBN 13 : 9812568107
Total Pages : 445 pages
Book Rating : 4.8/5 (125 download)
Download or read book MOSFET Modeling for Circuit Analysis and Design written by Carlos Galup-Montoro and published by World Scientific. This book was released on 2007 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
Author : Kevin J. Yang
Publisher :
ISBN 13 :
Total Pages : 284 pages
Book Rating : 4.:/5 (34 download)
Download or read book Characterization and Modeling of Advanced Gate Dielectrics written by Kevin J. Yang and published by . This book was released on 2002 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Peter Aaen
Publisher : Cambridge University Press
ISBN 13 : 113946812X
Total Pages : 375 pages
Book Rating : 4.1/5 (394 download)
Download or read book Modeling and Characterization of RF and Microwave Power FETs written by Peter Aaen and published by Cambridge University Press. This book was released on 2007-06-25 with total page 375 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Author : James Chieh-Tsung Chen
Publisher :
ISBN 13 :
Total Pages : 290 pages
Book Rating : 4.:/5 (34 download)
Download or read book Statistical Modeling of MOSFETs and Interconnects for Deep-submicron Technologies written by James Chieh-Tsung Chen and published by . This book was released on 1998 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gennady Gildenblat
Publisher : Springer Science & Business Media
ISBN 13 : 9048186145
Total Pages : 531 pages
Book Rating : 4.0/5 (481 download)
Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Author : Xiaochen Zhang
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (856 download)
Download or read book Characterization and Modeling of Low Frequency Noise and Dielectric Traps in Scaled MOSFET Devices written by Xiaochen Zhang and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Characterization on SiON MOSFET devices are performed including I-V (Current-Voltage), C-V (Capacitance-Voltage), charge pumping etc. NMOS transistors exhibit a higher interface trap density (9.7E10 cm-2eV-1) than PMOS (5.8E10 cm-2eV-1). The mean capture cross sections are comparable in these devices: 3.3E-17 cm2 and 9.1E-17 cm2, receptively, for CMOS devices. Different mobility extraction methods are presented and the results indicate strong surface roughness scattering in these devices. The effects of channel carbon ion implantation (Cii) on advanced high-K metal gate low-power CMOS devices have been studies. Cii improves the device performance, especially for NMOS. The improvement comes mainly from an improvement in electron mobility, where Coulomb scattering is reduced due to retarded boron diffusion with carbon.
Author : Mladen Božanić
Publisher : Springer Nature
ISBN 13 : 3030443981
Total Pages : 259 pages
Book Rating : 4.0/5 (34 download)
Download or read book Millimeter-Wave Integrated Circuits written by Mladen Božanić and published by Springer Nature. This book was released on 2020-03-16 with total page 259 pages. Available in PDF, EPUB and Kindle. Book excerpt: This peer-reviewed book explores the methodologies that are used for effective research, design and innovation in the vast field of millimeter-wave circuits, and describes how these have to be modified to fit the uniqueness of high-frequency nanoelectronics design. Each chapter focuses on a specific research challenge related to either small form factors or higher operating frequencies. The book first examines nanodevice scaling and the emerging electronic design automation tools that can be used in millimeter-wave research, as well as the singular challenges of combining deep-submicron and millimeter-wave design. It also demonstrates the importance of considering, in the millimeter-wave context, system-level design leading to differing packaging options. Further, it presents integrated circuit design methodologies for all major transceiver blocks typically employed at millimeter-wave frequencies, as these methodologies are normally fundamentally different from the traditional design methodologies used in analogue and lower-frequency electronics. Lastly, the book discusses the methodologies of millimeter-wave research and design for extreme or harsh environments, rebooting electronics, the additional opportunities for terahertz research, and the main differences between the approaches taken in millimeter-wave research and terahertz research.
Author : Lindor E. Henrickson
Publisher :
ISBN 13 :
Total Pages : 160 pages
Book Rating : 4.:/5 (238 download)
Download or read book Analysis and Reliability of Deep Submicron MOSFETs written by Lindor E. Henrickson and published by . This book was released on 1990 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Douglas Weiser
Publisher :
ISBN 13 : 9780530007960
Total Pages : 210 pages
Book Rating : 4.0/5 (79 download)
Download or read book A Physical MOSFET Model Applicable to Extremely Scaled CMOS IC Design written by Douglas Weiser and published by . This book was released on 2019-05-31 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: A process-based model (UFET) for deep-submicron bulk-silicon MOSFETs is developed and verified with numerical device simulations and measured data. The charge-based model is physical with accountings for the predominant short-channel (e.g., charge sharing, drain-induced threshold reduction and velocity saturation) and extremely scaled-technology (i.e., energy quantization and polysilicon-gate depletion) effects in MOSFETs. The key to UFET is the characterization of the bias-dependent two-dimensional regions near the source/ drain junctions which can extend over a significant fraction of the metallurgical channel length. When these two-dimensional regions near the junctions are modeled, the physical charge-sheet model can be applied to the remaining "quasi-two- dimensional" channel length to define the channel current and terminal charges, without resorting to empiricism to account for the short-channel effects. Special attention paid to continuity in the derivation of the model formalism yields a physical C-infinity model applicable to analog and digital CMOS circuit design. The small number of physical, process-based parameters simplifies the model calibration, and renders the model suitable for predictive device/circuit simulation, statistical simulations and circuit sensitivity analyses based on known or presumed process variations. Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "A Physical MOSFET Model Applicable to Extremely Scaled CMOS IC Design" by Douglas Aaron Weiser, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
Author : Dimitris Tsoukalas
Publisher : Springer Science & Business Media
ISBN 13 : 3709162440
Total Pages : 463 pages
Book Rating : 4.7/5 (91 download)
Download or read book Simulation of Semiconductor Processes and Devices 2001 written by Dimitris Tsoukalas and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
