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Ballistic Electrons
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Book Synopsis Physics of Quantum Electron Devices by : Federico Capasso
Download or read book Physics of Quantum Electron Devices written by Federico Capasso and published by Springer Science & Business Media. This book was released on 2013-03-07 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ability to engineer the bandstructure and the wavefunction over length scales previously inaccessible to technology using artificially structured materials and nanolithography has led to a new class of electron semiconductor devices whose operation is controlled by quantum effects. These structures not only represent exciting tools for investigating new quantum phenomena in semiconductors, but also offer exciting opportunities for applications. This book gives the first comprehensive treatment of the physics of quantum electron devices. This interdisciplinary field, at the junction between material science, physics and technology, has witnessed an explosive growth in recent years. This volume presents a detailed coverage of the physics of the underlying phenomena, and their device and circuit applications, together with fabrication and growth technology.
Book Synopsis Ballistic Electrons in a Submicron Semiconducting Structure by : Harold Urey Baranger
Download or read book Ballistic Electrons in a Submicron Semiconducting Structure written by Harold Urey Baranger and published by . This book was released on 1986 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Hot Electrons in Semiconductors by : N. Balkan
Download or read book Hot Electrons in Semiconductors written by N. Balkan and published by . This book was released on 1998 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt: Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research. Recent advances in technology have led to semiconductors with submicron dimensions, where electrons can be confined to two (quantum well), one (quantum wire), or zero (quantum dot) dimensions. In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further development. This book is the only comprehensive and up-to-date coverage of hot electrons. Intended for both established researchers and graduate students, it gives a complete account of the historical development of the subject, together with current research and future trends, and covers the physics of hot electrons in bulk and low-dimensional device technology. The contributions are from leading scientists in the field and are grouped broadly into five categories: introduction and overview; hot electron-phonon interactions and ultra-fast phenomena in bulk and two-dimensional structures; hot electrons in quantum wires and dots; hot electron tunneling and transport in superlattices; and novel devices based on hot electron transport.
Book Synopsis Physics of High-Speed Transistors by : Juras Pozela
Download or read book Physics of High-Speed Transistors written by Juras Pozela and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.
Book Synopsis Mesoscopic Physics and Electronics by : Tsuneya Ando
Download or read book Mesoscopic Physics and Electronics written by Tsuneya Ando and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 293 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor technology has developed considerably during the past several decades. The exponential growth in microelectronic processing power has been achieved by a constant scaling down of integrated cir,cuits. Smaller fea ture sizes result in increased functional density, faster speed, and lower costs. One key ingredient of the LSI technology is the development of the lithog raphy and microfabrication. The current minimum feature size is already as small as 0.2 /tm, beyond the limit imposed by the wavelength of visible light and rapidly approaching fundamental limits. The next generation of devices is highly likely to show unexpected properties due to quantum effects and fluctuations. The device which plays an important role in LSIs is MOSFETs (metal oxide-semiconductor field-effect transistors). In MOSFETs an inversion layer is formed at the interface of silicon and its insulating oxide. The inversion layer provides a unique two-dimensional (2D) system in which the electron concentration is controlled almost freely over a very wide range. Physics of such 2D systems was born in the mid-1960s together with the development of MOSFETs. The integer quantum Hall effect was first discovered in this system.
Book Synopsis Solid-Liquid Interfaces by : Klaus Wandelt
Download or read book Solid-Liquid Interfaces written by Klaus Wandelt and published by Springer Science & Business Media. This book was released on 2003-07-01 with total page 471 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using combinations of in situ and ex situ experimental methods, fundamental and relevant phenomena such as adsorption and desorption of ions and molecules, restructuring of surfaces, thin film and nanocluster growth, and electrochemical reactions on the micrometer scale are addressed. The overview includes a wide range of experimental techniques and examples of solid-liquid interfaces and aims at stimulating an expansion of this important type of interface science.
Book Synopsis Microwave Physics And Technique - Proceedings Of The Sixth International School by : A Y Spasov
Download or read book Microwave Physics And Technique - Proceedings Of The Sixth International School written by A Y Spasov and published by World Scientific. This book was released on 1990-03-01 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced Physical Models for Silicon Device Simulation by : Andreas Schenk
Download or read book Advanced Physical Models for Silicon Device Simulation written by Andreas Schenk and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: From the reviews: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [...], and a useful source of reference for experienced users ..." Microelectronics Journal
Book Synopsis Manipulating Anisotropic Transport and Superconductivity by Focused Ion Beam Microstructuring by : Maja D. Bachmann
Download or read book Manipulating Anisotropic Transport and Superconductivity by Focused Ion Beam Microstructuring written by Maja D. Bachmann and published by Springer Nature. This book was released on 2020-08-28 with total page 167 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents pioneering work in the relatively new field of focused ion beam (FIB) sculpting of single crystals to produce bespoke devices and enable the investigation of physics that cannot be studied in bulk samples. It begins with a comprehensive and didactic account of how to achieve this sculpting, revealing the ‘tricks of the trade’ of state-of-the-art FIB microstructuring. In subsequent chapters, the author presents ground-breaking results obtained from microstructures of the delafossite oxide metal PdCoO2 and the heavy fermion superconductor CeIrIn5. In these elegant, forefront experiments, a new form of directional ballistic transport in the ultra-pure delafossites is described and explained. Furthermore, a new way to spatially modulate superconductivity induced by strain is demonstrated with electrical transport measurements that agree well with predictions based on thermoelastic finite element simulations.
Book Synopsis Frontiers in Nanoscale Science of Micron/Submicron Devices by : A.-P. Jauho
Download or read book Frontiers in Nanoscale Science of Micron/Submicron Devices written by A.-P. Jauho and published by Springer Science & Business Media. This book was released on 1996-10-31 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale Science, whose birth and further growth and development has been driven by the needs of the microelectronics industry on one hand, and by the sheer human curiosity on the other hand, has given researchers an unprecedented capability to design and construct devices whose function ality is based on quantum and mesoscopic effects. A necessary step in this process has been the development of reliable fabrication techniques in the nanometer scale: two-dimensional systems, quantum wires and dots, and Coulomb blockade structures with almost ideal properties can nowadays be fabricated, and subjected to experimental studies. How does one fabricate micro/nanostructures of low dimensionality? How does one perform a nanoscale characterization of these structures? What are the fundamental properties typical to the structures? Which new physical processes in nanostructures need to be understood? What new physical processes may allow us to create new nanostructures? An improved understanding of these topics is necessary for creation of new concepts for future electronic and optoelectronic devices and for characterizing device structures based on those concepts.
Book Synopsis Low-Dimensional Electronic Systems by : Guenther Neubauer
Download or read book Low-Dimensional Electronic Systems written by Guenther Neubauer and published by Springer Science & Business Media. This book was released on 2013-03-13 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: Owing to new physical, technological, and device concepts of low-dimensionalelectronic systems, the physics and fabrication of quasi-zero, one- and two-dimensional systems are rapidly growing fields. The contributions presented in this volume cover results of nanostructure fabrication including recently developed techniques, for example, tunneling probe techniques and molecular beam epitaxy, quantum transport including the integer and fractional quantum Hall effect, optical and transport studies of the two-dimensional Wigner solid, phonon studies of low-dimensional systems, and Si/SiGe heterostructures and superlattices. To the readers new in the field this volume gives a comprehensive introduction and for the experts it is an update of their knowledge and a great help for decisions about future research activities.
Book Synopsis Focus on Semiconductor Research by : Thomas B. Elliot
Download or read book Focus on Semiconductor Research written by Thomas B. Elliot and published by Nova Publishers. This book was released on 2005 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book includes within its scope studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components. Dopant incorporation. Growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; in situ monitoring of epitaxial growth processes, also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. The physics of semiconductor electronic and optoelectronic devices are examined , including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit fabrication. Relevant areas of 'molecular electronics' and semiconductor structures incorporating Langmuir- Blodgett films; resists, lithography and metallisation where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterisation of materials and device structures are also included. The scope encompasses materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package- related failure mechanisms; effects of operational and environmental stresses on reliability.
Author :Frederick J. Leonberger Publisher :Springer Science & Business Media ISBN 13 :3642729703 Total Pages :303 pages Book Rating :4.6/5 (427 download)
Book Synopsis Picosecond Electronics and Optoelectronics II by : Frederick J. Leonberger
Download or read book Picosecond Electronics and Optoelectronics II written by Frederick J. Leonberger and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 303 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the past five years, there has been an enormous increase in the inter est in and understanding of electronic and optoelectronic devices operating in the picosecond (multigigahertz) range. This has been fueled in a sig nificant way by the spectacular advances in picosecond laser technology, electro optic sampling, III-V devices, and wideband fiber optic systems. Partly to address these advances, a new conference jointly sponsored by the IEEE Lasers and Electrooptics Society (IEEE (LEOS)) and the Op tical Society of America (OSA) was founded and its first meeting held in March 1985. The purpose of this meeting was to bring together work ers in the areas of electronics and optoelectronics who share a common interest in the physics and technology of picosecond solid-state electronic and optoelectronic devices, their multigigahertz applications, and ultrafast measurement techniques. Emphasis was placed on the interdisciplinary as pects of these areas, since each area is covered by its own topical meeting. This meeting was quite successful and led to a second meeting, of which this volume forms the proceedings.
Book Synopsis Carbon Nanotube Field Effect Transistor by : Fouad Sabry
Download or read book Carbon Nanotube Field Effect Transistor written by Fouad Sabry and published by One Billion Knowledgeable. This book was released on 2022-07-10 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: What Is Carbon Nanotube Field Effect Transistor A carbon nanotube field-effect transistor, also known as a CNTFET, is a kind of field-effect transistor that makes use of a single carbon nanotube or an array of carbon nanotubes as the channel material in place of bulk silicon, as is done in the conventional MOSFET construction. Since they were first exhibited in 1998, there have been significant advancements in CNTFET technology. How You Will Benefit (I) Insights, and validations about the following topics: Chapter 1: Carbon nanotube field-effect transistor Chapter 2: Carbon nanotube Chapter 3: JFET Chapter 4: Schottky barrier Chapter 5: Electron mobility Chapter 6: Nanoelectromechanical systems Chapter 7: Threshold voltage Chapter 8: Organic field-effect transistor Chapter 9: Ballistic conduction Chapter 10: Hybrid solar cell Chapter 11: Potential applications of carbon nanotubes Chapter 12: Carbon nanotubes in photovoltaics Chapter 13: Optical properties of carbon nanotubes Chapter 14: Carbon nanotube nanomotor Chapter 15: NanoIntegris Chapter 16: Ballistic conduction in single-walled carbon nanotubes Chapter 17: Tunnel field-effect transistor Chapter 18: Field-effect transistor Chapter 19: Carbon nanotubes in interconnects Chapter 20: Synthesis of carbon nanotubes Chapter 21: Vertically aligned carbon nanotube arrays (II) Answering the public top questions about carbon nanotube field effect transistor. (III) Real world examples for the usage of carbon nanotube field effect transistor in many fields. (IV) 17 appendices to explain, briefly, 266 emerging technologies in each industry to have 360-degree full understanding of carbon nanotube field effect transistor' technologies. Who This Book Is For Professionals, undergraduate and graduate students, enthusiasts, hobbyists, and those who want to go beyond basic knowledge or information for any kind of carbon nanotube field effect transistor.
Book Synopsis Hall Effect Devices by : R.S. Popovic
Download or read book Hall Effect Devices written by R.S. Popovic and published by CRC Press. This book was released on 2003-12-01 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the second edition of a very popular 1991 book describing the physics and technology of semiconductor electronic devices exploiting the Hall effect. These are magnetic field sensitive devices such as Hall elements, magnetoresistors, and magnetotransistors. Hall effect devices are commonly used as magnetic field sensors and as means for char
Book Synopsis Vacuum Nanoelectronic Devices by : Anatoliy Evtukh
Download or read book Vacuum Nanoelectronic Devices written by Anatoliy Evtukh and published by John Wiley & Sons. This book was released on 2015-09-21 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introducing up-to-date coverage of research in electron field emission from nanostructures, Vacuum Nanoelectronic Devices outlines the physics of quantum nanostructures, basic principles of electron field emission, and vacuum nanoelectronic devices operation, and offers as insight state-of-the-art and future researches and developments. This book also evaluates the results of research and development of novel quantum electron sources that will determine the future development of vacuum nanoelectronics. Further to this, the influence of quantum mechanical effects on high frequency vacuum nanoelectronic devices is also assessed. Key features: • In-depth description and analysis of the fundamentals of Quantum Electron effects in novel electron sources. • Comprehensive and up-to-date summary of the physics and technologies for THz sources for students of physical and engineering specialties and electronics engineers. • Unique coverage of quantum physical results for electron-field emission and novel electron sources with quantum effects, relevant for many applications such as electron microscopy, electron lithography, imaging and communication systems and signal processing. • New approaches for realization of electron sources with required and optimal parameters in electronic devices such as vacuum micro and nanoelectronics. This is an essential reference for researchers working in terahertz technology wanting to expand their knowledge of electron beam generation in vacuum and electron source quantum concepts. It is also valuable to advanced students in electronics engineering and physics who want to deepen their understanding of this topic. Ultimately, the progress of the quantum nanostructure theory and technology will promote the progress and development of electron sources as main part of vacuum macro-, micro- and nanoelectronics.
Book Synopsis Quantum-Classical Analogies by : Daniela Dragoman
Download or read book Quantum-Classical Analogies written by Daniela Dragoman and published by Springer Science & Business Media. This book was released on 2013-04-09 with total page 355 pages. Available in PDF, EPUB and Kindle. Book excerpt: It is unanimously accepted that the quantum and the classical descriptions of the physical reality are very different, although any quantum process is "mysteriously" transformed through measurement into an observable classical event. Beyond the conceptual differences, quantum and classical physics have a lot in common. And, more important, there are classical and quantum phenomena that are similar although they occur in completely different contexts. For example, the Schrödinger equation has the same mathematical form as the Helmholtz equation, there is an uncertainty relation in optics very similar to that in quantum mechanics, and so on; the list of examples is very long. Quantum-classical analogies have been used in recent years to study many quantum laws or phenomena at the macroscopic scale, to design and simulate mesoscopic devices at the macroscopic scale, to implement quantum computer algorithms with classical means, etc. On the other hand, the new forms of light – localized light, frozen light – seem to have more in common with solid state physics than with classical optics. So these analogies are a valuable tool in the quest to understand quantum phenomena and in the search for new (quantum or classical) applications, especially in the area of quantum devices and computing.
