Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Atomic Diffusion In Semiconductor Structures
Download Atomic Diffusion In Semiconductor Structures full books in PDF, epub, and Kindle. Read online Atomic Diffusion In Semiconductor Structures ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Atomic Diffusion in Semiconductors by : D. Shaw
Download or read book Atomic Diffusion in Semiconductors written by D. Shaw and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 615 pages. Available in PDF, EPUB and Kindle. Book excerpt: The diffusion or migration of atoms in matter, of whatever form, is a basic consequence of the existence of atoms. In metals, atomic diffusion has a well established position of importance as it is recognized that there are few metallurgical processes which do not embody the diffusion of one or more of the constituents. As regards semiconductors any thermal annealing treatment involves atomic diffusion. In semiconductor technology diffusion processes provide a vital and basic means of fabricating doped structures. Notwithstanding the importance of diffusion in the preparative processes of semiconductor structures and samples, the diffusion based aspects have acquired an empirical outlook verging almost on alchemy. The first attempt to present a systematic account of semiconductor diffusion processes was made by Boltaks [11 in 1961. During the decade since Boltaks' book appeared much work germane to understanding the atomic mechanisms responsible for diffusion in semiconductors has been published. The object of the present book is to give an account of, and to consolidate, present knowledge of semiconductor diffusion in terms of basic concepts of atomic migration in crystalline lattices. To this end, exhaustive compilations of empirical data have been avoided as these are available elsewhere [2, 31 : attention has been limited to considering evidence capable of yielding insight into the physical processes concerned in atomic diffusion.
Book Synopsis Atomic Diffusion in Semiconductor Structures by : G. B. Abdullaev
Download or read book Atomic Diffusion in Semiconductor Structures written by G. B. Abdullaev and published by Routledge. This book was released on 1987 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Atomic Diffusion in Semiconductor Structures by : Gasan Mamed Bagir ogly Abdullaev
Download or read book Atomic Diffusion in Semiconductor Structures written by Gasan Mamed Bagir ogly Abdullaev and published by Gordon & Breach Science Pub. This book was released on 1987-06-01 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Atomic Diffusion in III-V Semiconductors by : Brian Tuck
Download or read book Atomic Diffusion in III-V Semiconductors written by Brian Tuck and published by CRC Press. This book was released on 2021-05-30 with total page 245 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology. Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.
Book Synopsis Atomic Diffusion in Semiconductors by : D. Shaw
Download or read book Atomic Diffusion in Semiconductors written by D. Shaw and published by . This book was released on 1973-05-01 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals by : Oleg Velichko
Download or read book Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals written by Oleg Velichko and published by World Scientific. This book was released on 2019-11-05 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
Book Synopsis ATOMIC DIFFUSION IN SEMICONDUCTORS. by : ED SHAW
Download or read book ATOMIC DIFFUSION IN SEMICONDUCTORS. written by ED SHAW and published by . This book was released on with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Introduction to Diffusion in Semiconductors by : Brian Tuck
Download or read book Introduction to Diffusion in Semiconductors written by Brian Tuck and published by . This book was released on 1974 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon by : Peter Pichler
Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Book Synopsis Diffusion in Semiconductors, Other than Silicon: Compilation by : David J. Fisher
Download or read book Diffusion in Semiconductors, Other than Silicon: Compilation written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2011-02-21 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect and Diffusion Forum Vol. 308
Book Synopsis Nanoscopic Diffusion Studies on III-V Compound Semiconductor Structures by : Mariam González Debs
Download or read book Nanoscopic Diffusion Studies on III-V Compound Semiconductor Structures written by Mariam González Debs and published by . This book was released on 2005 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Atomic Diffusion in Semiconductors, Edited by D. Shaw by : D. Shaw
Download or read book Atomic Diffusion in Semiconductors, Edited by D. Shaw written by D. Shaw and published by . This book was released on 1973 with total page 607 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Charged Semiconductor Defects by : Edmund G. Seebauer
Download or read book Charged Semiconductor Defects written by Edmund G. Seebauer and published by Springer Science & Business Media. This book was released on 2008-11-14 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Book Synopsis Springer Handbook of Electronic and Photonic Materials by : Safa Kasap
Download or read book Springer Handbook of Electronic and Photonic Materials written by Safa Kasap and published by Springer. This book was released on 2017-10-04 with total page 1536 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second, updated edition of this essential reference book provides a wealth of detail on a wide range of electronic and photonic materials, starting from fundamentals and building up to advanced topics and applications. Its extensive coverage, with clear illustrations and applications, carefully selected chapter sequencing and logical flow, makes it very different from other electronic materials handbooks. It has been written by professionals in the field and instructors who teach the subject at a university or in corporate laboratories. The Springer Handbook of Electronic and Photonic Materials, second edition, includes practical applications used as examples, details of experimental techniques, useful tables that summarize equations, and, most importantly, properties of various materials, as well as an extensive glossary. Along with significant updates to the content and the references, the second edition includes a number of new chapters such as those covering novel materials and selected applications. This handbook is a valuable resource for graduate students, researchers and practicing professionals working in the area of electronic, optoelectronic and photonic materials.
Book Synopsis Atomic Diffusion and Interface Electronic Structure of III-V Heterojunctions and Their Dependence on Epitaxial Growth Transitions and Annealing by : Phillip Eugene Smith
Download or read book Atomic Diffusion and Interface Electronic Structure of III-V Heterojunctions and Their Dependence on Epitaxial Growth Transitions and Annealing written by Phillip Eugene Smith and published by . This book was released on 2007 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt: Achieving the abrupt interfaces necessary for III-V based devices presents a challenge in situations where both Group-III and Group-V sources are switched during an interface growth transition. Group-V exchange reactions and Group-III chamber memory effects are reported for a number of III-V systems. These phenomena, along with atomic rearrangements associated with cross-diffusion, can introduce interface-localized defects that adversely affect device performance. Additionally, the need to vary growth temperature with epilayer composition, as well as surface interactions during the early stages of interface growth, leads to differences between layer A grown on B versus layer B grown on A. The trend of device miniaturization and, correspondingly, high operating temperatures, makes understanding these interfacial interactions increasingly important. In order to clarify the role of chemical interactions and atomic rearrangement in determining interface electronic structure, cathodoluminescence spectroscopy (CLS), secondary ion mass spectrometry (SIMS), and a number of complementary techniques are used to perform measurements of representative, lattice-matched double heterostructures (DH) involving growth transitions with both cation and anion source-switching. The role of source-switching sequence and post-growth annealing in determining interface structure is quantified in InGaAs/InP, AlInP/GaAs, and InGaP/GaAs. I present evidence demonstrating that interface and bulk electronic structure depends sensitively on growth conditions, anneal temperature, and the resulting diffusion, thereby correlating cross-diffusion with defect emission and highlighting the asymmetric chemical and electronic differences due to growth sequence. Overall, these results demonstrate that interfacial cross-diffusion and exchange reactions have a significant impact on the electronic structure of lattice-matched III-V heterostructures.
Book Synopsis Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Volume 163 by : Donald J. Wolford
Download or read book Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Volume 163 written by Donald J. Wolford and published by . This book was released on 1990-06-20 with total page 1108 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Book Synopsis Light Scattering in Semiconductor Structures and Superlattices by : D.J. Lockwood
Download or read book Light Scattering in Semiconductor Structures and Superlattices written by D.J. Lockwood and published by Springer. This book was released on 2013-12-20 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: Just over 25 years ago the first laser-excited Raman spectrum of any crystal was obtained. In November 1964, Hobden and Russell reported the Raman spectrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar meetings were held in 1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and apart from the multidisciplinary biennial International Conference on Raman Spectroscopy there has been no special forum for experts in light scattering spectroscopy of semiconductors to meet and discuss latest developments. Meanwhile, technological advances in semiconductor growth have given rise to a veritable renaissance in the field of semiconductor physics. Light scattering spectroscopy has played a crucial role in the advancement of this field, providing valuable information about the electronic, vibrational and structural properties both of the host materials, and of heterogeneous composite structures. On entering a new decade, one in which technological advances in lithography promise to open even broader horirons for semiconductor physics, it seemed to us to be an ideal time to reflect on the achievements of the past decade, to be brought up to date on the current state-of-the-art, and to catch some glimpses of where the field might be headed in the 1990s.
