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Atomic And Electronic Structures Of Novel Ternary And Quaternary Narrow Band Gap Semiconductors
Download Atomic And Electronic Structures Of Novel Ternary And Quaternary Narrow Band Gap Semiconductors full books in PDF, epub, and Kindle. Read online Atomic And Electronic Structures Of Novel Ternary And Quaternary Narrow Band Gap Semiconductors ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Atomic and Electronic Structures of Novel Ternary and Quaternary Narrow Band-gap Semiconductors by : Khang Hoang
Download or read book Atomic and Electronic Structures of Novel Ternary and Quaternary Narrow Band-gap Semiconductors written by Khang Hoang and published by . This book was released on 2007 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions by : Kazuto Akiba
Download or read book Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions written by Kazuto Akiba and published by Springer. This book was released on 2019-04-04 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurements using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe). The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe. The overviews on BP and PbTe from the point of view of material properties help readers quickly understand the typical electronic character of narrow-gap semiconductor materials, which has recently attracted interest in topological features in condensed matter physics. Additionally the introductory review of the principles and methodology allows readers to understand the high magnetic field and pressure experiments.
Book Synopsis Semiconductor Surfaces and Interfaces by : Friedhelm Bechstedt
Download or read book Semiconductor Surfaces and Interfaces written by Friedhelm Bechstedt and published by . This book was released on 1988 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Localization Effects in Disordered III-V Semiconductor Nanostructures by : Mohammad Khaled Shakfa
Download or read book Localization Effects in Disordered III-V Semiconductor Nanostructures written by Mohammad Khaled Shakfa and published by Cuvillier Verlag. This book was released on 2015-12-07 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to the increasing demands industrially as well as scientifically on new optoelectronic devices for specific applications, semiconductor materials with desired energy band-gap are needed. In this context, alloying provides the ability to tailor the energy band gap of a compound semiconductor (ternary or quaternary) through the manipulation of its constituent composition. In this thesis, It is focused on two different III-V-based compound semiconductor materials, Ga(NAsP) and Ga(AsBi), both are promising for long-wavelength optoelectronic applications. In particular, quaternary Ga(NAsP) semiconductor structures can be utilized for the fabrication of intermediate band solar cells, for infrared laser emission, and, with a tremendous potential, for the realization of monolithic optoelectronic integrated circuits on silicon substrate (silicon photonics). On the other hand, ternary Ga(AsBi) semiconductor structures have been employed for a variety of applications including, for example, but not limited to, photoconductive terahertz antennas, light-emitting diodes (LEDs), and optically pumped as well as electrically injected laser diodes. Band gap engineering is achieved in the studied GaAs-based compounds by varying the amount of the incorporated V-element, i.e., nitrogen or bismuth. Despite the advantage of a shrinking in the band-gap energy, the introduction of a small amount of a V-element to a GaAs host structure results in an increase in the disorder potential due to the differences, e.g., in size and electronegativity between the incorporated and substituted anions. The presence of disorder effects within a semiconductor can significantly influence its electronic structure, i.e., the density of localized states (DOS) is increased. Disorder-induced localized states drastically affect carrier recombination processes in semiconductors. The changes in carrier dynamics can be revealed by investigating, e.g., electrical and optical properties of disordered semiconductors. In the presented work, photoluminescence (PL) spectroscopy measurements are employed for the characterization of disorder in semiconductor nanostructures. Beside the need of a qualitative explanation, a quantitative description of disorder effects, i.e., energy scaling of the disorder potential, is a task of crucial importance. Both aspects are discussed through the thesis.
Book Synopsis Electronic Structure of Semiconductor Heterojunctions by : Giorgio Margaritondo
Download or read book Electronic Structure of Semiconductor Heterojunctions written by Giorgio Margaritondo and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: E se non che di cid son vere prove A nd were it not for the true evidence Per piti e piti autori, che sa, ra. nno Of many authors who will be Per i miei versi nominati altrove, Mentioned elsewhere in my rhyme Non presterei alla penna 10. mana I would not lend my hand to the pen Per nota1' cid ch'io vidi, can temenza And describe my observations, for fear ehe non fosse do. altri casso e van 0; That they would be rejected and in vane; Mala lor chiara. e vera. esperienza But these authors' clear and true experience Mi assicura. nel dir, come persone Encourages me to report, since they Degne di fede ad ogni gra. n sentenza. Should always be trusted for their word. [From" Dittamondo", by Fazio degli UbertiJ Heterojunction interfaces, the interfaces between different semiconducting materi als, have been extensively explored for over a quarter of a century. The justifica tion for this effort is clear - these interfaces could become the building blocks of lllany novel solid-state devices. Other interfaces involving semiconductors are al ready widely used in technology, These are, for example, metal-semiconductor and insulator-semiconductor junctions and hOll1ojunctions. In comparison, the present applications of heterojunction int. erfaces are limited, but they could potentially becOlne lnuch lllore ext. ensive in the neal' future. The path towards the widespread use of heterojunctions is obstructed by several obstacles
Book Synopsis Nitride Wide Bandgap Semiconductor Material and Electronic Devices by : Yue Hao
Download or read book Nitride Wide Bandgap Semiconductor Material and Electronic Devices written by Yue Hao and published by CRC Press. This book was released on 2016-11-03 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Book Synopsis Electronic Structure of Defects in III-VI and II-VI Semiconductors and Novel Yb-based Intermetallics by : Zsolt Rák
Download or read book Electronic Structure of Defects in III-VI and II-VI Semiconductors and Novel Yb-based Intermetallics written by Zsolt Rák and published by . This book was released on 2009 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electronic Structure of Narrow Gap Semiconductors by : Paul Melvin Larson
Download or read book Electronic Structure of Narrow Gap Semiconductors written by Paul Melvin Larson and published by . This book was released on 2001 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2008 with total page 1006 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electronic Structure and Quantized Surface Electron Accumulation of Narrow Band Gap Semiconductors by : Leyla Colakerol
Download or read book Electronic Structure and Quantized Surface Electron Accumulation of Narrow Band Gap Semiconductors written by Leyla Colakerol and published by . This book was released on 2009 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Narrow band gap semiconductors play a crucial role in thin film photovoltaic cells and optoelectronics devices operating in the infrared region of visible spectrum. The interactions between the valence and conduction bands due to the narrow band gap have a big influence on the electronic structure and the device performance of these materials. The surface and bulk electronic properties of narrow band gap semiconductors were investigated using angle resolved photoelectron spectroscopy (ARPES), x-ray absorption spectroscopy and x-ray emission spectroscopy. Comparisons were made between the experimental results and density functional theory band structure calculations. Intrinsic electron accumulation near the surface of clean InN was directly observed by ARPES. The accumulation layer is discussed in terms of the bulk Fermi level (E F) lying below the pinned surface E F, with a confining potential formed normal to surface due to the downward band bending facilitated by donor type surface states or nitrogen vacancies. Various spectroscopic techniques were used to measure this band bending. The energy of the Fermi level and the size of the Fermi surface for these quantum well states could be controlled by varying the method of surface preparation and by the adsorption of potassium on the surface. Intermixing between the heavy and light hole valence bands in the intrinsic quantum well potential associated with the surface electron accumulation layer results in an inverted band structure, with the valence band maximum lying away from the Brillouin zone center. Similarly, the electronic band structure of CdO was investigated and quantized electron subbands were observed above the valence band maximum. The origin of the accumulation layer is discussed in terms of the bulk band structure of CdO calculated using quasi particle corrected density functional theory. High electron density at the surface of these materials provides new opportunities for potential device structures such as sensors, high frequency transmitters and field effect transistors. Therefore the study of their near surface electron accumulation and electronic structure is of importance in understanding the properties of these materials and discovering new application areas.
Book Synopsis Electronic Structure and Thermoelectric Properties of Narrow Band Gap Semiconductors and Pseudo-gap Systems by : Dat Thanh Do
Download or read book Electronic Structure and Thermoelectric Properties of Narrow Band Gap Semiconductors and Pseudo-gap Systems written by Dat Thanh Do and published by . This book was released on 2013 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Theoretical and experimental studies of ternary and quaternary nitrides for machining and thermoelectric materials by : Robert Pilemalm
Download or read book Theoretical and experimental studies of ternary and quaternary nitrides for machining and thermoelectric materials written by Robert Pilemalm and published by Linköping University Electronic Press. This book was released on 2019-04-02 with total page 50 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nitrides are used as coatings and thin films for a wide range of applications. The study and use of nitrides in the recent decades have shifted towards ternary, quaternary or even higher order (complex) nitrides. There is an interest to use ternary and quaternary nitrides for machining and thermoelectric materials, because it gives the possibility to choose composition and thereby design the materials properties. This thesis presents research results on TiAlN and and TiAlN-based coatings that are used as hard coatings for machining and on ternary scandium nitrides that are of interest for thin films for thermoelectric applications. The high-pressure high-temperature behavior of cubic TiAlN deposited on cubic boron nitride has been experimentally studied. It has been shown that the spinodal decomposition, which means decomposition into cubic domains enriched in TiN and AlN, is delayed as a result of high pressure compared to ambient pressure. No chemical interaction between coating and substrate occurs. TiZrAlN has been theoretically and experimentally studied at high temperature. The results show that the when Zr-content is decreased and the Al-content is increased the decomposition route changes from nucleation and growth to spinodal decomposition. The microstructure evolution with temperature depends on the initial composition. In the case where the decompositon starts with only spinodal decomposition the microstructure at 1100 °C consists of domains that are larger than in the case where the decomposition occurs by nucleation and growth. ScMN2 (M=V, Nb, Ta) phases have been experimentally demonstrated for M=Nb and Ta in a few studies, but have not been much investigated. In this theseis, their crystal structure, stability, elastic properties, electronic structure and thermoelectric properties have been studied. At 0 K and 0 GPa it has been shown that these three phases are thermodynamically and elastically stable. Additionally, these are narrow-bandgap semiconductors and their thermoelectric properties can be tuned by doping. Pressure has a stabilizing effect on these structures. When pressure increases from 0-150 GPa the elastic constants and moduli increases in the range 53-317 %.
Book Synopsis Ternary Chalcopyrite Semiconductors by : Joseph Leo Shay
Download or read book Ternary Chalcopyrite Semiconductors written by Joseph Leo Shay and published by Pergamon. This book was released on 1975 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Mechanical, Electronic and Optical Properties of Multi-ternary Semiconductor Alloys by : Dongguo Chen
Download or read book Mechanical, Electronic and Optical Properties of Multi-ternary Semiconductor Alloys written by Dongguo Chen and published by . This book was released on 2013 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ability to obtain tunable properties with composition makes multi-ternary alloys extremely useful for a variety of applications in semiconductor devices and is of significant interest in experimental and theoretical research. This dissertation investigates the mechanical, electronic and optical properties of multi-ternary, i.e., binary, ternary and quaternary, semiconductor alloys using analytical methods and first-principles calculations. For the calculations of mechanical properties, existing models on the average shear modulus of III-V & II-VI binary semiconductors are revised. New expressions are developed for the average Young's modulus as well as the shear modulus and Young's modulus on (111) plane for these compounds. It is found that the proposed models provide a simple and accurate means for predicting the elastic constants of ternary semiconductors. The crystal structures, formation enthalpies and electronic properties of alloys, GaP[subscript X]Sb1−[subscript X], InP[subscript X]Sb1−[subscript X] and CdS[subscript X]Te1−[subscript X], are then investigated using first-principles calculations. These alloys are studied for various structures and compositions. Comparisons between GaP[subscript X] Sb1−[subscript X] and InP[subscript X] Sb1−[subscript X] are made. In the study of CdS[subscript X]Te1−[subscript X] system, negative bowing parameter of spin-orbit splitting is found in the ordered structure while positive value is found in disordered structure. This work also gives a recipe to calculate the properties of Y2 alloys in any degree of crystal ordering. For the partially ordered samples, the trends of the Y2 ordering induced changes in the crystal field splitting and band gap narrowing are explored and explained in terms of the lattice mismatch and band offset between the binary constituents. The Y2 ordering induced change in the spin-orbit splitting is found to be positive and small. Additionally, a model for the pressure dependence of the energy gap of group III-V & II-VI ternary semiconductor alloys is proposed. The trends in the pressure coefficients with respect to nearest neighbor distance and ionicity are discussed. Finally, the electronic and optical properties of Cu2ZnGeS4, Cu2ZnGeSe4 and Cu2ZnGeTe4 in KS and ST structures are studied. Band structure and optical spectra including the dielectric function, refractive index, absorption coefficient and reflectivity are determined. The critical points in the optical spectra are assigned to the interband transitions in accord with the calculated band structures. The trends of these properties with respect to crystal structures and VI (S, Se and Te) anion atoms are explored qualitatively.
Book Synopsis Thermoelectric Power Generation: Volume 1044 by : Timothy P. Hogan
Download or read book Thermoelectric Power Generation: Volume 1044 written by Timothy P. Hogan and published by . This book was released on 2008-06-11 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. The focus of this book is in the fields of thermoelectrics, thermionics and thermoacoustics for thermal-to-electric energy conversion.
Book Synopsis Optical and Electronic Properties of Some Ternary Semiconductors and Dynamical Properties of Crystalline Polymorphs and Amorphous Solids of Group IV Elements by : Maged Mansour El-Batanouny
Download or read book Optical and Electronic Properties of Some Ternary Semiconductors and Dynamical Properties of Crystalline Polymorphs and Amorphous Solids of Group IV Elements written by Maged Mansour El-Batanouny and published by . This book was released on 1978 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Elementary Electronic Structure by : Walter Ashley Harrison
Download or read book Elementary Electronic Structure written by Walter Ashley Harrison and published by World Scientific. This book was released on 2004 with total page 866 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a revised edition of the 1999 text on the electronic structure and properties of solids, similar in spirit to the well-known 1980 text Electronic Structure and the Properties of Solids. The revisions include an added chapter on glasses, and rewritten sections on spin-orbit coupling, magnetic alloys, and actinides. The text covers covalent semiconductors, ionic insulators, simple metals, and transition-metal and f-shell-metal systems. It focuses on the most important aspects of each system, making what approximations are necessary in order to proceed analytically and obtain formulae for the properties. Such back-of-the-envelope formulae, which display the dependence of any property on the parameters of the system, are characteristic of Harrison's approach to electronic structure, as is his simple presentation and his provision of all the needed parameters.In spite of the diversity of systems and materials, the approach is systematic and coherent, combining the tight-binding (or atomic) picture with the pseudopotential (or free-electron) picture. This provides parameters ? the empty-core radii as well as the covalent energies ? and conceptual bases for estimating the various properties of all these systems. Extensive tables of parameters and properties are included.The book has been written as a text, with problems at the end of each chapter, and others can readily be generated by asking for estimates of different properties, or different materials, than those treated in the text. In fact, the ease of generating interesting problems reflects the extraordinary utility and simplicity of the methods introduced. Developments since the 1980 publication have made the theory simpler and much more accurate, besides allowing much wider application.
