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Author : Kai Chen
Publisher :
ISBN 13 :
Total Pages : 480 pages
Book Rating : 4.:/5 (34 download)
Download or read book Analytical and Compact Models (BSIM3v3) for Deep Submicron CMOS written by Kai Chen and published by . This book was released on 1998 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : A. B. Bhattacharyya
Publisher : John Wiley & Sons
ISBN 13 : 0470823437
Total Pages : 512 pages
Book Rating : 4.4/5 (78 download)
Download or read book Compact MOSFET Models for VLSI Design written by A. B. Bhattacharyya and published by John Wiley & Sons. This book was released on 2009-07-23 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design , A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI development, allowing readers to stay ahead of the curve, despite the relentless evolution of new models. Adopts a unified approach to guide students through the confusing array of MOSFET models Links MOS physics to device models to prepare practitioners for real-world design activities Helps fabless designers bridge the gap with off-site foundries Features rich coverage of: quantum mechanical related phenomena Si-Ge strained-Silicon substrate non-classical structures such as Double Gate MOSFETs Presents topics that will prepare readers for long-term developments in the field Includes solutions in every chapter Can be tailored for use among students and professionals of many levels Comes with MATLAB code downloads for independent practice and advanced study This book is essential for students specializing in VLSI Design and indispensible for design professionals in the microelectronics and VLSI industries. Written to serve a number of experience levels, it can be used either as a course textbook or practitioner’s reference. Access the MATLAB code, solution manual, and lecture materials at the companion website: www.wiley.com/go/bhattacharyya
Author : David Binkley
Publisher : John Wiley & Sons
ISBN 13 : 047003369X
Total Pages : 632 pages
Book Rating : 4.4/5 (7 download)
Download or read book Tradeoffs and Optimization in Analog CMOS Design written by David Binkley and published by John Wiley & Sons. This book was released on 2008-09-15 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analog CMOS integrated circuits are in widespread use for communications, entertainment, multimedia, biomedical, and many other applications that interface with the physical world. Although analog CMOS design is greatly complicated by the design choices of drain current, channel width, and channel length present for every MOS device in a circuit, these design choices afford significant opportunities for optimizing circuit performance. This book addresses tradeoffs and optimization of device and circuit performance for selections of the drain current, inversion coefficient, and channel length, where channel width is implicitly considered. The inversion coefficient is used as a technology independent measure of MOS inversion that permits design freely in weak, moderate, and strong inversion. This book details the significant performance tradeoffs available in analog CMOS design and guides the designer towards optimum design by describing: An interpretation of MOS modeling for the analog designer, motivated by the EKV MOS model, using tabulated hand expressions and figures that give performance and tradeoffs for the design choices of drain current, inversion coefficient, and channel length; performance includes effective gate-source bias and drain-source saturation voltages, transconductance efficiency, transconductance distortion, normalized drain-source conductance, capacitances, gain and bandwidth measures, thermal and flicker noise, mismatch, and gate and drain leakage current Measured data that validates the inclusion of important small-geometry effects like velocity saturation, vertical-field mobility reduction, drain-induced barrier lowering, and inversion-level increases in gate-referred, flicker noise voltage In-depth treatment of moderate inversion, which offers low bias compliance voltages, high transconductance efficiency, and good immunity to velocity saturation effects for circuits designed in modern, low-voltage processes Fabricated design examples that include operational transconductance amplifiers optimized for various tradeoffs in DC and AC performance, and micropower, low-noise preamplifiers optimized for minimum thermal and flicker noise A design spreadsheet, available at the book web site, that facilitates rapid, optimum design of MOS devices and circuits Tradeoffs and Optimization in Analog CMOS Design is the first book dedicated to this important topic. It will help practicing analog circuit designers and advanced students of electrical engineering build design intuition, rapidly optimize circuit performance during initial design, and minimize trial-and-error circuit simulations.
Author : Tibor Grasser
Publisher : Springer Nature
ISBN 13 : 3030375005
Total Pages : 724 pages
Book Rating : 4.0/5 (33 download)
Download or read book Noise in Nanoscale Semiconductor Devices written by Tibor Grasser and published by Springer Nature. This book was released on 2020-04-26 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
Author : M Jamal Deen
Publisher : World Scientific
ISBN 13 : 9814488925
Total Pages : 422 pages
Book Rating : 4.8/5 (144 download)
Download or read book Cmos Rf Modeling, Characterization And Applications written by M Jamal Deen and published by World Scientific. This book was released on 2002-04-10 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.
Author : Yuhua Cheng
Publisher : Springer Science & Business Media
ISBN 13 : 0306470500
Total Pages : 467 pages
Book Rating : 4.3/5 (64 download)
Download or read book MOSFET Modeling & BSIM3 User’s Guide written by Yuhua Cheng and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.
Author : Samar K. Saha
Publisher : CRC Press
ISBN 13 : 148224067X
Total Pages : 548 pages
Book Rating : 4.4/5 (822 download)
Download or read book Compact Models for Integrated Circuit Design written by Samar K. Saha and published by CRC Press. This book was released on 2018-09-03 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.
Author : Trond Ytterdal
Publisher : John Wiley & Sons
ISBN 13 : 0470864346
Total Pages : 306 pages
Book Rating : 4.4/5 (78 download)
Download or read book Device Modeling for Analog and RF CMOS Circuit Design written by Trond Ytterdal and published by John Wiley & Sons. This book was released on 2003-08-01 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bridges the gap between device modelling and analog circuit design. Includes dedicated software enabling actual circuit design. Covers the three significant models: BSIM3, Model 9 &, and EKV. Presents practical guidance on device development and circuit implementation. The authors offer a combination of extensive academic and industrial experience.
Author : Tor A Fjeldly
Publisher : World Scientific
ISBN 13 : 9814493260
Total Pages : 188 pages
Book Rating : 4.8/5 (144 download)
Download or read book Silicon And Beyond: Advanced Device Models And Circuit Simulators written by Tor A Fjeldly and published by World Scientific. This book was released on 2000-04-20 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers. One of the major tasks is the development of new and improved device models needed for accurate device and circuit design. Another task is the development of new circuit-simulation tools to handle very large and complex circuits. This book addresses both these issues with up-to-date reviews written by leading experts in the field.The first three chapters of the book discuss advanced device models both for existing technologies and for new, emerging technologies. Among the topics covered are models for MOSFETs, thin-film transitors (TFTs), and compound semiconductor devices, including GaAs HEMTs and HFETs, heterodimensional devices, quantum-tunneling devices, as well as wide-bandgap devices. Chapters 4 and 5 discuss advanced circuit simulators that hold promise for handling circuits of much higher complexity than what is possible for typical state-of-the-art circuit simulators today.
Author : Gennady Gildenblat
Publisher : Springer Science & Business Media
ISBN 13 : 9048186145
Total Pages : 531 pages
Book Rating : 4.0/5 (481 download)
Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Author : Willy M.C. Sansen
Publisher : Springer Science & Business Media
ISBN 13 : 1475730470
Total Pages : 378 pages
Book Rating : 4.4/5 (757 download)
Download or read book Analog Circuit Design written by Willy M.C. Sansen and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new book on Analog Circuit Design contains the revised contributions of all the tutorial speakers of the eight workshop AACD (Advances in Analog Circuit Design), which was held at Nice, France on March 23-25, 1999. The workshop was organized by Yves Leduc of TI Nice, France. The program committee consisted of Willy Sansen, K.U.Leuven, Belgium, Han Huijsing, T.U.Delft, The Netherlands and Rudy van de Plassche, T.U.Eindhoven, The Netherlands. The aim of these AACD workshops is to bring together a restricted group of about 100 people who are personally advancing the frontiers of analog circuit design to brainstorm on new possibilities and future developments in a restricted number of fields. They are concentrated around three topics. In each topic six speakers give a tutorial presentation. Eighteen papers are thus included in this book. The topics of 1999 are: (X)DSL and other communication systems RF MOST models Integrated filters and oscillators The other topics, which have been coverd before, are: 1992 Operational amplifiers A-D Converters Analog CAD 1993 Mixed-mode A+D design Sensor interfaces Communication circuits 1994 Low-power low-voltage design Integrated filters Smart power 1995 Low-noise low-power low-voltge design Mixed-mode design with CAD tools Voltage, current and time references vii viii 1996 RF CMOS circuit design Bandpass sigma-delta and other data converters Translinear circuits 1997 RF A-D Converters Sensor and actuator interfaces Low-noise oscillators, PLL's and synthesizers 1998 I-Volt electronics Design and implementation of mixed-mode systems Low-noise amplifiers and RF power amplifiers for telecommunications
Author : Patrick Joseph Sullivan
Publisher :
ISBN 13 :
Total Pages : 332 pages
Book Rating : 4.:/5 (318 download)
Download or read book Analysis and Experimental Results of RF CMOS Mixers written by Patrick Joseph Sullivan and published by . This book was released on 1998 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher : Atlantica Séguier Frontières
ISBN 13 : 9782863322345
Total Pages : 680 pages
Book Rating : 4.3/5 (223 download)
Download or read book Essderc'98 written by and published by Atlantica Séguier Frontières. This book was released on 1998 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Christian C. Enz
Publisher : John Wiley & Sons
ISBN 13 : 0470855452
Total Pages : 328 pages
Book Rating : 4.4/5 (78 download)
Download or read book Charge-Based MOS Transistor Modeling written by Christian C. Enz and published by John Wiley & Sons. This book was released on 2006-08-14 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.
Author :
Publisher :
ISBN 13 :
Total Pages : 784 pages
Book Rating : 4.3/5 (91 download)
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1998 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher : Allied Publishers
ISBN 13 : 9788177641004
Total Pages : 444 pages
Book Rating : 4.6/5 (41 download)
Download or read book Icccd-2000. written by and published by Allied Publishers. This book was released on 2000 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 634 pages
Book Rating : 4.3/5 (91 download)
Download or read book Proceedings, ... International Symposium on VLSI Design written by and published by . This book was released on 2003 with total page 634 pages. Available in PDF, EPUB and Kindle. Book excerpt:
