Subnanometer Analysis and Optimization of Indium Aluminum Arsenide/indium Gallium Arsenide Modulation Doped Field Effect Transistors

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ISBN 13 :
Total Pages : 164 pages
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Book Synopsis Subnanometer Analysis and Optimization of Indium Aluminum Arsenide/indium Gallium Arsenide Modulation Doped Field Effect Transistors by : Matthew Lee Seaford

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Scientific and Technical Aerospace Reports

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ISBN 13 :
Total Pages : 1064 pages
Book Rating : 4.X/5 (4 download)

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Scientific and Technical Aerospace Reports

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ISBN 13 :
Total Pages : 1148 pages
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Masters Theses in the Pure and Applied Sciences

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Publisher : Springer Science & Business Media
ISBN 13 : 1461573912
Total Pages : 386 pages
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Bell Laboratories Talks and Papers

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ISBN 13 :
Total Pages : 586 pages
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Book Synopsis Bell Laboratories Talks and Papers by : Bell Telephone Laboratories, inc. Libraries and Information Systems Center

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Molecular-beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide/indium Gallium Arsenide Single Quantum-well Modulation-doped Field-effect Transistor Structures

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ISBN 13 :
Total Pages : 578 pages
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Signal

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ISBN 13 :
Total Pages : 1172 pages
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Proceedings

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ISBN 13 :
Total Pages : 424 pages
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Dissertation Abstracts International

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ISBN 13 :
Total Pages : 816 pages
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Energy Research Abstracts

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Total Pages : 852 pages
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American Doctoral Dissertations

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Total Pages : 760 pages
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NASA Thesaurus

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ISBN 13 :
Total Pages : 1232 pages
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BTL Talks and Papers

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ISBN 13 :
Total Pages : 576 pages
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Book Synopsis BTL Talks and Papers by : Bell Telephone Laboratories, inc. Technical Information Libraries

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Chemical Abstracts

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ISBN 13 :
Total Pages : 2540 pages
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DC and RF Characterization of Gallium Indium Arsenide/aluminum Indium Arsenide/indium Phosphide Modulation Doped Field Effect Transistors for Millimeter Wave Device Applications

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ISBN 13 :
Total Pages : 434 pages
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Book Synopsis DC and RF Characterization of Gallium Indium Arsenide/aluminum Indium Arsenide/indium Phosphide Modulation Doped Field Effect Transistors for Millimeter Wave Device Applications by : Lauren Fay Palmateer

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Japanese Science and Technology

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ISBN 13 :
Total Pages : 724 pages
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A Physical Model for the Bias Dependence of the Modulation-doped Field-effect Transistor's High-frequency Performance

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ISBN 13 :
Total Pages : 786 pages
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Book Synopsis A Physical Model for the Bias Dependence of the Modulation-doped Field-effect Transistor's High-frequency Performance by : Mark Christopher Foisy

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