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An Investigation Of Electrical And Physical Properties Of Reactively Diode Sputtered Silicon Nitride Thin Films
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Book Synopsis An Investigation of Electrical and Physical Properties of Reactively, Diode Sputtered Silicon Nitride Thin Films by : Divyang Manharlal Shah
Download or read book An Investigation of Electrical and Physical Properties of Reactively, Diode Sputtered Silicon Nitride Thin Films written by Divyang Manharlal Shah and published by . This book was released on 1988 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis An Investigation of Electrical and Optical Properties of Reactively Sputtered Silicon Nitride and Amorphous Hydrogenated Silicon Thin Films by : Tae Hoon Kim
Download or read book An Investigation of Electrical and Optical Properties of Reactively Sputtered Silicon Nitride and Amorphous Hydrogenated Silicon Thin Films written by Tae Hoon Kim and published by . This book was released on 1988 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis An Investigation of Electrical and Optical Properties of Sputtered Amorphous Silicon Nitride and Germanium Thin Films by : Rajendra S. Khandelwal
Download or read book An Investigation of Electrical and Optical Properties of Sputtered Amorphous Silicon Nitride and Germanium Thin Films written by Rajendra S. Khandelwal and published by . This book was released on 1987 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low temperature preparation of thin amorphous Silicon Nitride and Germanium Films by direct RF sputter deposition was investigated. Influence of various sputtering parameters on film properties was studied. Infrared transmission spectrophotometry was used to evaluate optical properties of the films whereas electrical characteristics of the films were determined from current-voltage measurements of MIS structures. For Silicon Nitride films it was observed that the stoichiometry, as indicated by the IR transmission, dielectric constant and current density versus square root of electric field measurements, was a strong function of the sputtering gas composition and particularly the Ar/N ratio in the sputtering gas. It was established from the current-voltage relationship that the dominant conduction mechanism in these films is of PooleFrenkel type. The current-voltage characteristics of the MIS devices were observed to be independent of the electrode material, device area and the film thickness. It is concluded that the insulating films thus deposited were comparable to those deposited using any other deposition method and is anticipated that due to the low deposition temperatures, sputtering may emerge as a highly potential process for optoelectronic device passivation.
Book Synopsis Masters Theses in the Pure and Applied Sciences by : Wade H. Shafer
Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Oata Analysis and Synthesis (CINOAS) * at Purdue. University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 33 (thesis year 1988) a total of 13,273 theses titles from 23 Canadian and 1 85 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 33 reports theses submitted in 1988, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.
Book Synopsis LPCVD Silicon Nitride and Oxynitride Films by : F.H.P.M. Habraken
Download or read book LPCVD Silicon Nitride and Oxynitride Films written by F.H.P.M. Habraken and published by Springer. This book was released on 1991 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present book collects a broad overview of chemical and physical char acteristics of silicon oxynitrides. Special emphasis is put on the way in which these properties influence the electrical characteristics and behaviour of this important material. The results presented here were obtained in an ex tended European research cooperation in the framework of ESPRIT Project 369 'Physical-chemical characterization of silicon oxynitrides in relation to their electrical properties', which ran from 1984 to 1988. In this project two industrial laboratories (Philips Research Laborato ries in Eindhoven, the Netherlands, and Matra Harris Semiconductors from Nantes, France) cooperated with various academic and government research laboratories (Harwell Laboratory in Great Britain, the Interuniversity Micro electronics Center (IMEC) in Leuven, Belgium, and the Faculty of Physics at the University of Utrecht in the Netherlands). The latter partner acted as prime contractor for the project. General interest in silicon oxynitrides for applications in integrated circuit technology stems from the fact that proper choice of deposition conditions enables one to produce materials with properties which can be either oxide like or nitride-like. Of, course, in I.C. technology one would like to combine the good properties ofthe two materials, i.e. superior electrical properties of silicon oxide and good diffusion barrier behaviour of silicon nitride, to men tion only a few, without paying for such an operation by obtaining all the less desirable properties in such a mixed material.
Book Synopsis Reactively Sputtered Films of Silicon Nitride for Diffusion Masking by : Dennis Richard Delzer
Download or read book Reactively Sputtered Films of Silicon Nitride for Diffusion Masking written by Dennis Richard Delzer and published by . This book was released on 1967 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: The experimental procedure for reactively sputtering films of silicon nitride together with the methods for measuring the film thickness have been investigated. Some of the properties of these nitride films were studied. These properties included: infrared spectrum, etching properties, and index of refraction. The adherence of the films was also investigated. Research was conducted on the sputtering properties of silicon nitride. Some of the secondary parameters which affect the sputtering rate were studied. These parameters included: cathode-to-substrate distance, applied voltage, gas pressure, and time. The uniformity of the sputtered films was also investigated. The results of these experiments were similar to the results of many published reports on sputtering. The last area of research covered by this thesis was the masking ability of the silicon nitride films. It was found that these reactively sputtered silicon nitride films effectively masked against the diffusion of boron and phosphorus in silicon. The minimum masking thickness was also studied. The masking ability of these nitride films against zinc diffusion in gallium arsenide was not conclusively proven. It appeared that the nitride films were masking against zinc diffusion, but the results were erratic. It was concluded that the diffusion technique was producing these poor results. More work on masking in GaAs was suggested using different diffusant sources.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992 with total page 1572 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical Properties of Copper Nitride (Cu3N) Thin Films Perpared by Reactive Sputtering by : Siau Yen Teng
Download or read book Electrical Properties of Copper Nitride (Cu3N) Thin Films Perpared by Reactive Sputtering written by Siau Yen Teng and published by . This book was released on 2012 with total page 42 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Control of Stress in Silicon Nitride Thin Films by : Ajay Krishnan
Download or read book Control of Stress in Silicon Nitride Thin Films written by Ajay Krishnan and published by . This book was released on 1990 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon nitride thin films of varying composition and thickness were deposited on silicon substrates by reactive rf diode sputtering of a silicon target using an argon/nitrogen gas mixture. Film stoichiometry could be controlled by varying the partial pressure of nitrogen, the total sputtering gas pressure and the target rf power. Films with refractive index of 2.01, the value for stoichiometric silicon nitride, could be obtained. Film stress was measured by wafer curvature; refractive index and thickness of deposited films were obtained by ellipsometry and interferometry measurements. The etch rate in buffered HF for films with refractive index 2.05 was 29A/min; as measured by JR spectroscopy these films had relatively low oxygen and hydrogen content. On increasing the film thickness from 300 A to 1900 A, the stress decreased from 4.45 x 109/m2 to 0.56 x 109N/m2 for a film with a refractive index of 2.05. It was observed that films with silicon in excess of the stoichiometric value and films with greater thickness exhibited reduced stress. Films with higher refractive index were obtained on reducing the nitrogen partial pressure and increasing the applied rf power. Since low temperature deposition is critical for reducing the stress developed in thin films, the substrate temperature during sputter deposition was maintained at 140°C(+/-10°C). The stress content of the unannealed NJIT films was observed to be higher by about a factor of 10 than the lowest stress value (2 x 108N/m2) obtained by plasma deposition followed by a 400°C postanneal for a 1000 A thick film. The lowest stress value obtained during this research was 0.98 x 109 N/m22, with 2.24 being the refractive index for this silicon rich film with a thickness of 700 A. The value for a 730 A thick film with index of 1.702 was 2.036 x 109 N/m2.
Download or read book Metals Abstracts written by and published by . This book was released on 1996 with total page 1628 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical Properties of Copper Nitride Thin Film Prepared by Reactive DC Sputtering by : Wan Noor Ezianti Wan Mohd. Noral Azman
Download or read book Electrical Properties of Copper Nitride Thin Film Prepared by Reactive DC Sputtering written by Wan Noor Ezianti Wan Mohd. Noral Azman and published by . This book was released on 2013 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ceramic Abstracts written by and published by . This book was released on 1998 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Handbook of Inorganic Electrochromic Materials by : C.G. Granqvist
Download or read book Handbook of Inorganic Electrochromic Materials written by C.G. Granqvist and published by Elsevier. This book was released on 1995-03-16 with total page 651 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrochromic materials are able to change their optical properties in a persistent and reversible way under the action of a voltage pulse. This book explores electrochromism among the metal oxides, with detailed discussions of materials preparation (primarily by thin film technology), materials characterization by (electro)chemical and physical techniques, optical properties, electrochromic device design, and device performance. The vast quantity of information presented is structured in a systematic manner and the optical data is interpreted within a novel conceptual framework. The publication will serve as a comprehensive foundation and reference work for future studies within the rapidly expanding field of electrochromic materials and devices. These devices are of particular interest for information displays, variable-transmittance (smart) windows, variable-reflectance mirrors and variable-emittance surfaces.
Download or read book Metal Finishing Abstracts written by and published by . This book was released on 1985 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the 18th Electrical Electronics Insulation Conference by :
Download or read book Proceedings of the 18th Electrical Electronics Insulation Conference written by and published by . This book was released on 1987 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Foundations of Vacuum Coating Technology by : Donald M. Mattox
Download or read book The Foundations of Vacuum Coating Technology written by Donald M. Mattox and published by William Andrew. This book was released on 2018-08-21 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Foundations of Vacuum Coating Technology, Second Edition, is a revised and expanded version of the first edition, which was published in 2003. The book reviews the histories of the various vacuum coating technologies and expands on the history of the enabling technologies of vacuum technology, plasma technology, power supplies, and low-pressure plasma-enhanced chemical vapor deposition. The melding of these technologies has resulted in new processes and products that have greatly expanded the application of vacuum coatings for use in our everyday lives. The book is unique in that it makes extensive reference to the patent literature (mostly US) and how it relates to the history of vacuum coating. The book includes a Historical Timeline of Vacuum Coating Technology and a Historical Timeline of Vacuum/Plasma Technology, as well as a Glossary of Terms used in the vacuum coating and surface engineering industries. History and detailed descriptions of Vacuum Deposition Technologies Review of Enabling Technologies and their importance to current applications Extensively referenced text Patents are referenced as part of the history Historical Timelines for Vacuum Coating Technology and Vacuum/Plasma Technology Glossary of Terms for vacuum coating
