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Author : Herman Trivilino
Publisher :
ISBN 13 :
Total Pages : 150 pages
Book Rating : 4.:/5 (142 download)
Download or read book An Infrared Absorption Study of Neutron Transmutation Doped Silicon: Boron written by Herman Trivilino and published by . This book was released on 1985 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Robert D. Larrabee
Publisher : Springer Science & Business Media
ISBN 13 : 1461326958
Total Pages : 337 pages
Book Rating : 4.4/5 (613 download)
Download or read book Neutron Transmutation Doping of Semiconductor Materials written by Robert D. Larrabee and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
Author : Konrad Colbow
Publisher :
ISBN 13 :
Total Pages : 100 pages
Book Rating : 4.:/5 (66 download)
Download or read book Infrared Absorption Lines in Boron-doped Silicon written by Konrad Colbow and published by . This book was released on 1963 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Richard Albert Gassman
Publisher :
ISBN 13 :
Total Pages : 150 pages
Book Rating : 4.:/5 (12 download)
Download or read book Isothermal Annealing Study of Neutron Transmutation Doped Silicon:gallium written by Richard Albert Gassman and published by . This book was released on 1983 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Mohammad Saeed Uddin
Publisher :
ISBN 13 :
Total Pages : 136 pages
Book Rating : 4.:/5 (135 download)
Download or read book The Study of Radiation Damages in Neutron Transmutation Doped Silicon Using EPR Technique written by Mohammad Saeed Uddin and published by . This book was released on 1985 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Dieter K. Schroder
Publisher : John Wiley & Sons
ISBN 13 : 0471739065
Total Pages : 800 pages
Book Rating : 4.4/5 (717 download)
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author : M. Balkanski
Publisher :
ISBN 13 :
Total Pages : 34 pages
Book Rating : 4.:/5 (227 download)
Download or read book Infrared Study of Localized Vibrations in Silicon Due to Boron and Lithium written by M. Balkanski and published by . This book was released on 1965 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt: Infrared absorption was used to determine the characteristics of localized modes in silicon due to the electrically active impurities, the isotopes of boron and lithium. The impurity and isotopic origin of all peaks was indicated. An attempt was made to deduce the configuration of both impurities in the lattice from the number of observed peaks. The temperature effect on the position, width, and integrated intensity of absorption peaks was measured. The temperature dependence of the position and line width may indicate the role of anharmonic forces around the impurities. The study of the temperature dependence on the integrated absorption is a means for distinguishing the one-phonon absorption caused by other processes.
Author :
Publisher :
ISBN 13 :
Total Pages : 838 pages
Book Rating : 4.3/5 (91 download)
Download or read book Physics Briefs written by and published by . This book was released on 1986 with total page 838 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Bernard Pajot
Publisher : Springer Science & Business Media
ISBN 13 : 3642180183
Total Pages : 532 pages
Book Rating : 4.6/5 (421 download)
Download or read book Optical Absorption of Impurities and Defects in Semiconducting Crystals written by Bernard Pajot and published by Springer Science & Business Media. This book was released on 2012-08-28 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.
Author : Peter Pichler
Publisher : Springer Science & Business Media
ISBN 13 : 3709105978
Total Pages : 576 pages
Book Rating : 4.7/5 (91 download)
Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Author : Paul Nai-Tseng Chen
Publisher :
ISBN 13 :
Total Pages : 68 pages
Book Rating : 4.:/5 (263 download)
Download or read book Neutron-irradiation Damage in Boron Doped Silicon by X-ray Diffuse Scattering written by Paul Nai-Tseng Chen and published by . This book was released on 1972 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 584 pages
Book Rating : 4.:/5 (3 download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 704 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 1350 pages
Book Rating : 4.3/5 (91 download)
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1966 with total page 1350 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 1028 pages
Book Rating : 4.:/5 (31 download)
Download or read book ERDA Energy Research Abstracts written by and published by . This book was released on 1983 with total page 1028 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 988 pages
Book Rating : 4.:/5 (319 download)
Download or read book INIS Atomindex written by and published by . This book was released on 1988 with total page 988 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : William Steve Goruk
Publisher :
ISBN 13 :
Total Pages : 98 pages
Book Rating : 4.:/5 (66 download)
Download or read book Infrared Absorption in Arsenic-doped Silicon written by William Steve Goruk and published by . This book was released on 1964 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt:
