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Author : Seung-chul Song
Publisher :
ISBN 13 :
Total Pages : 438 pages
Book Rating : 4.:/5 (478 download)
Download or read book Advanced oxynitride and silicon nitride gate dielectrics for ULSI CMOS technology written by Seung-chul Song and published by . This book was released on 1999 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Fred Roozeboom
Publisher : The Electrochemical Society
ISBN 13 : 9781566772747
Total Pages : 482 pages
Book Rating : 4.7/5 (727 download)
Download or read book Rapid Thermal and Other Short-time Processing Technologies written by Fred Roozeboom and published by The Electrochemical Society. This book was released on 2000 with total page 482 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings from this May 2000 symposium illustrate the range of applications in Rapid Thermal Processing (RTP). The refereed papers cover a variety of issues, such as ultra-shallow junctions; contacts for nanoscale CMOS; gate stacks; new applications of RTP, such as for the enhanced crystalization of amorphous silicon thin films; and advances on RTP systems and process monitoring, including optimizing and controlling gas flows in an RTCVD reactor. Most presentations are supported by charts and other graphical data. c. Book News Inc.
Author : Eric Garfunkel
Publisher : Springer Science & Business Media
ISBN 13 : 9401150087
Total Pages : 503 pages
Book Rating : 4.4/5 (11 download)
Download or read book Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices written by Eric Garfunkel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
Author : Yosi Shacham-Diamand
Publisher : Springer Science & Business Media
ISBN 13 : 0387958681
Total Pages : 545 pages
Book Rating : 4.3/5 (879 download)
Download or read book Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications written by Yosi Shacham-Diamand and published by Springer Science & Business Media. This book was released on 2009-09-19 with total page 545 pages. Available in PDF, EPUB and Kindle. Book excerpt: In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.
Author : Gang He
Publisher : John Wiley & Sons
ISBN 13 : 3527646361
Total Pages : 560 pages
Book Rating : 4.5/5 (276 download)
Download or read book High-k Gate Dielectrics for CMOS Technology written by Gang He and published by John Wiley & Sons. This book was released on 2012-08-10 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.
Author : Byoung Woon Min
Publisher :
ISBN 13 :
Total Pages : 342 pages
Book Rating : 4.:/5 (423 download)
Download or read book Reliability characterization of advanced oxynitride gate dielectrics for ULSI MOSFET application written by Byoung Woon Min and published by . This book was released on 1998 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Takashi Hori
Publisher : Springer Science & Business Media
ISBN 13 : 3642608566
Total Pages : 362 pages
Book Rating : 4.6/5 (426 download)
Download or read book Gate Dielectrics and MOS ULSIs written by Takashi Hori and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g., conventional SiO2 used in CMOS logic circuits, nitrided oxides, which recently became indispensable for flash memories, and composite ONO and ferroelectric films for passive capacitors used in DRAM applications. The book also covers issues common to all gate dielectrics, such as MOSFET physics, evaluation, scaling, and device application/integration for successful development. The information is as up to date as possible, especially for nanometer-range ultrathin gate-dielectric films indispensible in submicrometer ULSIs. The text together with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail.
Author : Ram Ekwal Sah
Publisher : The Electrochemical Society
ISBN 13 : 1566775523
Total Pages : 863 pages
Book Rating : 4.5/5 (667 download)
Download or read book Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 9 written by Ram Ekwal Sah and published by The Electrochemical Society. This book was released on 2007 with total page 863 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions contains the papers presented in the symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectics held May 6-11, 2007 in Chicago. Papers were presented on deposition, characterization and applications of the dielectrics including high- and low-k dielectrics, as well as interface states, device characterization, reliabiliy and modeling.
Author : Changhwan Choi
Publisher :
ISBN 13 :
Total Pages : 296 pages
Book Rating : 4.:/5 (521 download)
Download or read book Thermally stable advanced ultra thin CVD hafnium oxynitride (HfOxNy) gate dielectrics with poly-Si gate electrode for future CMOS technology written by Changhwan Choi and published by . This book was released on 2002 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Cor L. Claeys
Publisher : The Electrochemical Society
ISBN 13 : 9781566773089
Total Pages : 636 pages
Book Rating : 4.7/5 (73 download)
Download or read book ULSI Process Integration II written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 2001 with total page 636 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : F.H.P.M. Habraken
Publisher : Springer
ISBN 13 : 9783642765933
Total Pages : 0 pages
Book Rating : 4.7/5 (659 download)
Download or read book LPCVD Silicon Nitride and Oxynitride Films written by F.H.P.M. Habraken and published by Springer. This book was released on 1991 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present book collects a broad overview of chemical and physical char acteristics of silicon oxynitrides. Special emphasis is put on the way in which these properties influence the electrical characteristics and behaviour of this important material. The results presented here were obtained in an ex tended European research cooperation in the framework of ESPRIT Project 369 'Physical-chemical characterization of silicon oxynitrides in relation to their electrical properties', which ran from 1984 to 1988. In this project two industrial laboratories (Philips Research Laborato ries in Eindhoven, the Netherlands, and Matra Harris Semiconductors from Nantes, France) cooperated with various academic and government research laboratories (Harwell Laboratory in Great Britain, the Interuniversity Micro electronics Center (IMEC) in Leuven, Belgium, and the Faculty of Physics at the University of Utrecht in the Netherlands). The latter partner acted as prime contractor for the project. General interest in silicon oxynitrides for applications in integrated circuit technology stems from the fact that proper choice of deposition conditions enables one to produce materials with properties which can be either oxide like or nitride-like. Of, course, in I.C. technology one would like to combine the good properties ofthe two materials, i.e. superior electrical properties of silicon oxide and good diffusion barrier behaviour of silicon nitride, to men tion only a few, without paying for such an operation by obtaining all the less desirable properties in such a mixed material.
Author : H. R. Huff
Publisher :
ISBN 13 :
Total Pages : 650 pages
Book Rating : 4.3/5 (91 download)
Download or read book Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics: Volume 567 written by H. R. Huff and published by . This book was released on 1999-09 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt: Device scaling has been the engine driving the continued pervasiveness of the microelectronics revolution. The SIA roadmap calls for 4-5nm films (oxide equivalent thickness) in 2000, and
Author : Cor L. Claeys
Publisher : The Electrochemical Society
ISBN 13 : 9781566772419
Total Pages : 408 pages
Book Rating : 4.7/5 (724 download)
Download or read book ULSI Process Integration written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 1999 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Peter Pichler
Publisher : Springer Science & Business Media
ISBN 13 : 3709105978
Total Pages : 576 pages
Book Rating : 4.7/5 (91 download)
Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Author : David G. Seiler
Publisher :
ISBN 13 :
Total Pages : 734 pages
Book Rating : 4.3/5 (91 download)
Download or read book Characterization and Metrology for ULSI Technology, 2000 written by David G. Seiler and published by . This book was released on 2001 with total page 734 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Fred Roozeboom
Publisher : The Electrochemical Society
ISBN 13 : 9781566772327
Total Pages : 470 pages
Book Rating : 4.7/5 (723 download)
Download or read book Advances in Rapid Thermal Processing written by Fred Roozeboom and published by The Electrochemical Society. This book was released on 1999 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : K. B. Sundaram
Publisher : The Electrochemical Society
ISBN 13 : 9781566772280
Total Pages : 300 pages
Book Rating : 4.7/5 (722 download)
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by K. B. Sundaram and published by The Electrochemical Society. This book was released on 1999 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:
