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A Study Of Mg Doping In Gan During Molecular Beam Epitaxy
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Book Synopsis A Study of MG Doping in Gan During Molecular Beam Epitaxy by : 彭澤厚
Download or read book A Study of MG Doping in Gan During Molecular Beam Epitaxy written by 彭澤厚 and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "A Study of Mg Doping in GaN During Molecular Beam Epitaxy" by 彭澤厚, Chak-hau, Pang, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3122661 Subjects: Magnesium Gallium nitride Semiconductor doping Molecular beam epitaxy
Book Synopsis A Study of Mg Doping in GaN During Molecular Beam Epitaxy by : Chak-hau Pang
Download or read book A Study of Mg Doping in GaN During Molecular Beam Epitaxy written by Chak-hau Pang and published by . This book was released on 2001 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Accords-Puncten, welche zwischen Ihro Majest. zu Schweden Reichs-Raht und Admirals auch Lieut-Generals Herrn Carl Gustaph Wrangels Hochgräfl. Exell. eines Theils, und dem Herrn Gouvernatorn Christoffer Bille zu Mehlgardt ... andern Theils den 6. September 1658 wegen Ubergabe der Vestung Cronenburg an Ihr. Königl. Majest. zu Schweden verglichen und geschlossen by :
Download or read book Accords-Puncten, welche zwischen Ihro Majest. zu Schweden Reichs-Raht und Admirals auch Lieut-Generals Herrn Carl Gustaph Wrangels Hochgräfl. Exell. eines Theils, und dem Herrn Gouvernatorn Christoffer Bille zu Mehlgardt ... andern Theils den 6. September 1658 wegen Ubergabe der Vestung Cronenburg an Ihr. Königl. Majest. zu Schweden verglichen und geschlossen written by and published by . This book was released on 1658 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Investigation of Periodic Mg Doping in (0001) (Ga,In)N/GaN Superlattices Grown on by Plasma-assisted Molecular Beam Epitaxy (PAMBE) for Hole Injection in Light Emitting Diodes by : Erdi Kuşdemir
Download or read book Investigation of Periodic Mg Doping in (0001) (Ga,In)N/GaN Superlattices Grown on by Plasma-assisted Molecular Beam Epitaxy (PAMBE) for Hole Injection in Light Emitting Diodes written by Erdi Kuşdemir and published by . This book was released on 2021* with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Brief van Achatus de Dohna (1581-1647) aan André Rivet (1572-1651) by :
Download or read book Brief van Achatus de Dohna (1581-1647) aan André Rivet (1572-1651) written by and published by . This book was released on 1645 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization and Doping of Epitaxially Grown GaN and A1N on Si Using Molecular Beam Epitaxy by : Chi Hang Ko
Download or read book Characterization and Doping of Epitaxially Grown GaN and A1N on Si Using Molecular Beam Epitaxy written by Chi Hang Ko and published by . This book was released on 2007 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nitride based semiconductors have a unique combination of properties that make them especially suitable for many of the new challenges and applications of the twenty-first century, The group III nitride semiconductors, aluminum nitride (AlN), gallium nitride (GaN), and indium nitride (InN) form a complete series of ternary alloys (InGaN, InAlN, and AlGaN) whose direct band gaps range from 1.9 to 6.2 eV. These compound semiconductors far exceed the physical properties of silicon, and GaN is the most dynamic of them. GaN is often referred to as the "final frontier of semiconductors", Its high thermal conductivity, high melting temperature, low dielectric constant and high breakdown voltage make it an attractive semiconductor for many electronic and optoelectronic devices such as light emitting diodes, laser diodes, radiation detectors, high power and high frequency devices capable of operating at high temperatures, and in hostile chemical environments and so on, GaN thin films, either intrinsic or doped with silicon or magnesium, were grown on silicon(lll) substrates with AIN buffer layers by Molecular Beam Epitaxy (MBE) under a broad range of growth parameters in this study. The samples were characterized using Filmetrics thin film analyzer, Atomic Force Microscopy (AFM), Photoluminescence Spectroscopy, hot probe, and four-point probe. Material growth began with deposition of a 0.3 monolayer (ML) of Al on the SiC 111) 7x7 surface leading to fully passivated Si(111) [square root]3x[square root]3-Al surface, on which AlN buffer layers and then the GaN layers were deposited. X-ray diffraction measurements indicated growth of single-crystalline hexagonal GaN(00l) while PL measurement demonstrated a peak position corresponding to bulk hexagonal GaN, Sample surface morphology, roughness, and resistivity showed a strong dependence on growth conditions and dopant types. The percent roughness/thickness on the GaN fIlms decreased linearly with increasing Si dopant temperature and increased exponentially to the first order with increasing Mg dopant temperature. P-type doping was achieved using Mg and the resistivity of both Si- and Mg-doped GaN samples showed an inverse linear relationship with the dopant temperatures.
Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Book Synopsis Systematic Studies of Carbon Doping in High Quality GaN Grown by Molecular Beam Epitaxy by :
Download or read book Systematic Studies of Carbon Doping in High Quality GaN Grown by Molecular Beam Epitaxy written by and published by . This book was released on 2004 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: For the final contract period September 1, 2003 - December 31, 2004, we have completed the following tasks: * Sucessfully incorporated carbon into all MBE-grown HEMTs (in conjunction with the DARPA Wide Bandgap Semiconductor program) and realized record power non-field-plated GaN HEMTs (for both MBE and MOCVD. * In collaboration with Prof. Steve Ringel's group at Ohio State (under ONR support), completed an initial study of deep level optical studies of carbon-doped MBE GaN. Completed initial studies of Fe-doping in MBE GaN as an alternative approach for realizing semi-insulating GaN.
Book Synopsis Molecular Beam Epitaxy and Characterization of Doped and Undoped Cubic GaN Layers by : Bernd Schöttker
Download or read book Molecular Beam Epitaxy and Characterization of Doped and Undoped Cubic GaN Layers written by Bernd Schöttker and published by . This book was released on 1999 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Role of Growth Conditions on the P-doping of GaN by Plasma-assisted Molecular Beam Epitaxy by : Erik Haus
Download or read book The Role of Growth Conditions on the P-doping of GaN by Plasma-assisted Molecular Beam Epitaxy written by Erik Haus and published by . This book was released on 2001 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Doping of Al(x)Ga(1-x)N Films by Electron Cyclotron Resonance Assisted Molecular Beam Epitaxy by :
Download or read book Growth and Doping of Al(x)Ga(1-x)N Films by Electron Cyclotron Resonance Assisted Molecular Beam Epitaxy written by and published by . This book was released on 1992 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: Growth and doping of GaN by ECR assisted MBE is reported. We report on the role of the GaN-buffer and AlN-buffer, and their combination on the two dimensional nucleation rate and lateral growth rate. Conditions for quasi layer by layer growth were identified. XRD was used to study secondary phase, the direction and quality of orientational ordering in and out of the substrate, and homogeneous and inhomogeneous strain. Relatively high mobility autodoped films were produced and their transport mechanism was investigated. Intrinsic GaN films were produced and were doped n- and p-type with Si and Mg respectively, without requiring annealing for dopant activation. RIE processing of GaN was developed and metal contacts were investigated. A direct correlation between the metal work function and barrier height was also found.
Book Synopsis Growth and Doping of Al(x)Ga(1-x) Films by Electron Cyclotron Resonance Assisted Molecular Beam Epitaxy by :
Download or read book Growth and Doping of Al(x)Ga(1-x) Films by Electron Cyclotron Resonance Assisted Molecular Beam Epitaxy written by and published by . This book was released on 1992 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: Growth and doping of GaN by ECR assisted MBE is reported. We report on the role of the GaN-buffer and AlN-buffer, and their combination on the two dimensional nucleation rate and lateral growth rate. Conditions for quasi layer by layer growth were identified. XRD was used to study secondary phase, the direction and quality of orientational ordering in and out of the substrate, and homogeneous and inhomogeneous strain. Relatively high mobility autodoped films were produced and their transport mechanism was investigated. Intrinsic GaN- films were produced and were doped n- and p-type with Si and Mg respectively, without requiring annealing for dopant activation. RIE processing of GaN was developed and metal contacts were investigated. A direct correlation between the metal work function and barrier height was also found.
Book Synopsis Mg-doped P-AlGaN Growth with Molecular Beam Epitaxy by : 陳麒仲
Download or read book Mg-doped P-AlGaN Growth with Molecular Beam Epitaxy written by 陳麒仲 and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Doping of GaN{sub 1-x}Asx with High As Content by :
Download or read book Doping of GaN{sub 1-x}Asx with High As Content written by and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent work has shown that GaN{sub 1-x}Asx can be grown across the entire composition range by low temperature molecular beam epitaxy with intermediate compositions being amorphous, but control of the electrical properties through doping is critical for functionalizing this material. Here we report the bipolar doping of GaN{sub 1-x}Asx with high As content to conductivities above 4 S/cm at room temperature using Mg or Te. The carrier type was confirmed by thermopower measurements. Doping requires an increase in Ga flux during growth resulting in a mixed phase material of polycrystalline GaAs:N embedded in amorphous GaN{sub 1-x}Asx.
Author :North American Conference on Molecular Beam Epitaxy (16, 1997, Ann Arbor, Mich.) Publisher : ISBN 13 :9781563968211 Total Pages :264 pages Book Rating :4.9/5 (682 download)
Book Synopsis Papers from the 16th North American Conference on Molecular Beam Epitaxy by : North American Conference on Molecular Beam Epitaxy (16, 1997, Ann Arbor, Mich.)
Download or read book Papers from the 16th North American Conference on Molecular Beam Epitaxy written by North American Conference on Molecular Beam Epitaxy (16, 1997, Ann Arbor, Mich.) and published by . This book was released on 1998 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ultra-high B Doping During Si1̳-̳x̳Gex̳(001) Gas-source Molecular-beam Epitaxy by : Glenn Aaron Glass
Download or read book Ultra-high B Doping During Si1̳-̳x̳Gex̳(001) Gas-source Molecular-beam Epitaxy written by Glenn Aaron Glass and published by . This book was released on 1999 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth, Doping and Nanostructures of Gallium Nitride by : Xingmin Cai
Download or read book Growth, Doping and Nanostructures of Gallium Nitride written by Xingmin Cai and published by Open Dissertation Press. This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Growth, Doping and Nanostructures of Gallium Nitride" by Xingmin, Cai, 蔡興民, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled GROWTH, DOPING AND NANOSTRUCTURES OF GALLIUM NITRIDE Submitted by Cai Xing Min for the degree of Doctor of Philosophy at The University of Hong Kong in September 2005 Due to its exceptional properties, such as the direct and wide band gap and high thermal stability, gallium nitride (GaN) is widely used in optoelectronics and high temperature/high power devices. Moreover, GaN has great potential for spintronic and nanoelectronic applications. Hence research on the nanostructures and doping of GaN has become intensive in recent years. Theoretical calculations predict that Mn doped GaN has Curie temperatures above room temperature. However, experimental results have not been consistent and a wide range of magnetic properties was reported for GaN: Mn. In this work, doping by thermal diffusion and doping during molecular beam epitaxy (MBE) growth were investigated. It was found that GaN wafers doped with Mn and Cr by thermal diffusion were ferromagnetic at 300 K, while for the MBE grown GaMnN samples, ferromagnetism up to 56 K was observed. This illustrates the importance of the material quality and the doping mechanism on the magnetic properties of the sample. One possible way to achieve improved material quality of GaN is to fabricate nanowires instead of thin films. Due to the lack of lattice matched substrates for GaN, it is difficult to grow epitaxial layers with low concentration of defects. On the other hand, GaN nanowires with good crystalline quality could be grown on a wider range of substrates. Therefore, systematic investigation of GaN nanowire growth has been performed. The effects of catalyst, temperature, and Ga to N ratio on the obtained morphology of GaN were studied. It was found that metallic Ni and Au were suitable catalysts for GaN nanowire growth, while nickel nitrate resulted in the growth of SiO nanowire bunches. The effect of the Ga/N ratio on the morphology of GaN nanowires was studied in detail for Ni catalyzed growth. It was found that the morphology of GaN nanowires strongly depended on the Ga/N ratio. In relatively Ga rich condition, smooth-surfaced GaN nanowires grew along [1010], while in relatively N rich condition, a mixture of smooth-surfaced and stacked-cone GaN nanowires growing along [0001] was obtained. In addition, in the N rich condition, lateral growth of GaN nanowires and a completely new morphology were observed. The growth mechanisms responsible for the different morphologies were discussed. In addition, growth of InN and In Ga N nanostructures was also studied. x 1-x Different catalysts were tested for growing InN nanowires, and successful fabrication of nanowires was achieved for Au and Ag. Both hexagonal and cubic InN nanorods with polyhedral ends were obtained and their formation mechanism was discussed. In Ga N nanowires with a core/shell structure were successfully fabricated. Free x 1-x standing In Ga N nanocoils and In Ga N nanowires coiled around one another x 1-x x 1-x were observed with longer growth time and on substrates with thicker gold layers. DOI: 10.5353/th_b3580639 Subjects: Semiconductor doping Nanostructures Gallium nitride
