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A Low Frequency Noise Comparision Sic Of Surface Channel And Buried Channel Mosfets
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Book Synopsis Strained-Si Heterostructure Field Effect Devices by : C.K Maiti
Download or read book Strained-Si Heterostructure Field Effect Devices written by C.K Maiti and published by CRC Press. This book was released on 2007-01-11 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2668 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Handbook of Semiconductor Manufacturing Technology by : Yoshio Nishi
Download or read book Handbook of Semiconductor Manufacturing Technology written by Yoshio Nishi and published by CRC Press. This book was released on 2017-12-19 with total page 1720 pages. Available in PDF, EPUB and Kindle. Book excerpt: Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fundamentals of III-V Semiconductor MOSFETs by : Serge Oktyabrsky
Download or read book Fundamentals of III-V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Index to IEEE Publications by : Institute of Electrical and Electronics Engineers
Download or read book Index to IEEE Publications written by Institute of Electrical and Electronics Engineers and published by . This book was released on 1990 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues for 1973- cover the entire IEEE technical literature.
Book Synopsis Low-Frequency Noise in Advanced MOS Devices by : Martin Haartman
Download or read book Low-Frequency Noise in Advanced MOS Devices written by Martin Haartman and published by Springer Science & Business Media. This book was released on 2007-08-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
Book Synopsis Random Telegraph Signals in Semiconductor Devices by : Eddy Simoen
Download or read book Random Telegraph Signals in Semiconductor Devices written by Eddy Simoen and published by . This book was released on 2016 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Following their first observation in 1984, random telegraph signals (RTSs) were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. As semiconductor devices move to the nanoscale however, RTSs have become an issue of major concern to the semiconductor industry, both in development of current technology, such as memory devices and logic circuits, as well as in future semiconductor devices beyond the silicon roadmap, such as nanowire, TFET and carbon nanotube-based devices. It has become clear that the reliability of state-of-the-art and future CMOS technology nodes is dominated by RTS and single trap phenomena, and so its understanding is of vital importance for the modelling and simulation of the operation and the expected lifetime of CMOS devices and circuits. It is the aim of this book to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of RTSs to applied technology."--Prové de l'editor.
Book Synopsis Semiconductor Detector Systems by : Helmuth Spieler
Download or read book Semiconductor Detector Systems written by Helmuth Spieler and published by OUP Oxford. This book was released on 2005-08-25 with total page 513 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.
Book Synopsis Technology Computer Aided Design by : Chandan Kumar Sarkar
Download or read book Technology Computer Aided Design written by Chandan Kumar Sarkar and published by CRC Press. This book was released on 2018-09-03 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt: Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
Download or read book CMOS written by R. Jacob Baker and published by John Wiley & Sons. This book was released on 2008 with total page 1074 pages. Available in PDF, EPUB and Kindle. Book excerpt: This edition provides an important contemporary view of a wide range of analog/digital circuit blocks, the BSIM model, data converter architectures, and more. The authors develop design techniques for both long- and short-channel CMOS technologies and then compare the two.
Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Designing with Field-effect Transistors by : Edwin S. Oxner
Download or read book Designing with Field-effect Transistors written by Edwin S. Oxner and published by McGraw-Hill Companies. This book was released on 1990 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: projetos eletronicos utilizando transistor de efeito de campo (fet).
Book Synopsis Ion-solid Interactions: Bibliography by : Walter M. Gibson
Download or read book Ion-solid Interactions: Bibliography written by Walter M. Gibson and published by . This book was released on 1980 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Sorin Cristoloveanu Publisher :Springer Science & Business Media ISBN 13 :9780792395485 Total Pages :414 pages Book Rating :4.3/5 (954 download)
Book Synopsis Electrical Characterization of Silicon-on-Insulator Materials and Devices by : Sorin Cristoloveanu
Download or read book Electrical Characterization of Silicon-on-Insulator Materials and Devices written by Sorin Cristoloveanu and published by Springer Science & Business Media. This book was released on 1995-06-30 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.
