Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
32nd Arftg Conference
Download 32nd Arftg Conference full books in PDF, epub, and Kindle. Read online 32nd Arftg Conference ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis High-Speed Heterostructure Devices by : Patrick Roblin
Download or read book High-Speed Heterostructure Devices written by Patrick Roblin and published by Cambridge University Press. This book was released on 2002-03-07 with total page 726 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.
Download or read book Conference Proceedings written by and published by . This book was released on 1992 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Microwave Electronics by : Giovanni Ghione
Download or read book Microwave Electronics written by Giovanni Ghione and published by Cambridge University Press. This book was released on 2018 with total page 599 pages. Available in PDF, EPUB and Kindle. Book excerpt: A self-contained guide to microwave electronics, covering passive and active components, linear, low-noise and power amplifiers, microwave measurements, and CAD techniques. It is the ideal text for graduate and senior undergraduate students taking courses in microwave and radio-frequency electronics, as well as professional microwave engineers.
Book Synopsis Nonlinear Design: FETs and HEMTs by : Peter H. Ladbrooke
Download or read book Nonlinear Design: FETs and HEMTs written by Peter H. Ladbrooke and published by Artech House. This book was released on 2021-11-30 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages and currents are time-varying, as they must be for these devices to have any practical use, the model progressively fails for higher specification circuits. This book shows how to reform the standard model to render it fully compliant with the way FETs and HEMTs actually function, thus rendering it valid dynamically. Proof-of-principle is demonstrated for several practical circuits, including a frequency doubler and amplifiers with demanding performance criteria. Methods for extracting both the reformulated model and the standard model are described, including a scheme for re-constructing from S-parameters the bias-dependent dynamic (or RF) I(V) characteristics along which devices work in real-world applications, and as needed for the design of nonlinear circuits using harmonic-balance and time-domain simulators. The book includes a historical review of how variations on the standard model theme evolved, leading up to one of the most widely used—the Angelov (or Chalmers) model.
Download or read book ARFTG Conference Digest written by and published by . This book was released on 2002 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Nonlinear Microwave and RF Circuits by : Stephen A. Maas
Download or read book Nonlinear Microwave and RF Circuits written by Stephen A. Maas and published by Artech House. This book was released on 2003 with total page 603 pages. Available in PDF, EPUB and Kindle. Book excerpt: This newly and thoroughly revised edition of the 1988 Artech House classic offers you a comprehensive, up-to-date treatment of nonlinear microwave and RF circuits. It gives you a current, in-depth understanding of the theory of nonlinear circuit analysis with a focus on Volterra-series and harmonic-balance methods. You get practical guidance in designing nonlinear circuits and modeling solid-state devices for nonlinear circuit analysis by computer. Moreover, you learn how characteristics of such models affect the analysis of these circuits.
Book Synopsis Modeling and Characterization of RF and Microwave Power FETs by : Peter Aaen
Download or read book Modeling and Characterization of RF and Microwave Power FETs written by Peter Aaen and published by Cambridge University Press. This book was released on 2007-06-25 with total page 375 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Book Synopsis "32nd ARFTG Conference Digest". by :
Download or read book "32nd ARFTG Conference Digest". written by and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microwave Journal written by and published by . This book was released on 1991 with total page 1046 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physics of Semiconductor Devices by : Vikram Kumar
Download or read book Physics of Semiconductor Devices written by Vikram Kumar and published by . This book was released on 2002 with total page 812 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Time-domain Characterization of Transistors by : James Joseph Kempf
Download or read book Time-domain Characterization of Transistors written by James Joseph Kempf and published by . This book was released on 1999 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the ... Midwest Symposium on Circuits and Systems by :
Download or read book Proceedings of the ... Midwest Symposium on Circuits and Systems written by and published by . This book was released on 2001 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Conference Proceedings, 21st European Microwave Conference 91 by : European Microwave Conference (21, 1991, Stuttgart)
Download or read book Conference Proceedings, 21st European Microwave Conference 91 written by European Microwave Conference (21, 1991, Stuttgart) and published by . This book was released on 1991 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis 1995 IEEE MTT-S International Microwave Symposium Digest by : Lynn Kirby
Download or read book 1995 IEEE MTT-S International Microwave Symposium Digest written by Lynn Kirby and published by . This book was released on 1995 with total page 776 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Distributed Power Amplifiers for RF and Microwave Communications by : Narendra Kumar
Download or read book Distributed Power Amplifiers for RF and Microwave Communications written by Narendra Kumar and published by Artech House. This book was released on 2015-06-01 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new resource presents readers with all relevant information and comprehensive design methodology of wideband amplifiers. This book specifically focuses on distributed amplifiers and their main components, and presents numerous RF and microwave applications including well-known historical and recent architectures, theoretical approaches, circuit simulation, and practical implementation techniques. A great resource for practicing designers and engineers, this book contains numerous well-known and novel practical circuits, architectures, and theoretical approaches with detailed description of their operational principles.
Book Synopsis Behavioral Modeling and Linearization of RF Power Amplifiers by : John Wood
Download or read book Behavioral Modeling and Linearization of RF Power Amplifiers written by John Wood and published by Artech House. This book was released on 2014-06-01 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wireless voice and data communications have made great improvements, with connectivity now virtually ubiquitous. Users are demanding essentially perfect transmission and reception of voice and data. The infrastructure that supports this wide connectivity and nearly error-free delivery of information is complex, costly, and continually being improved. This resource describes the mathematical methods and practical implementations of linearization techniques for RF power amplifiers for mobile communications. This includes a review of RF power amplifier design for high efficiency operation. Readers are also provided with mathematical approaches to modeling nonlinear dynamical systems, which can be applied in the context of modeling the PA for identification in a pre-distortion system. This book also describes typical approaches to linearization and digital pre-distortion that are used in practice.
Book Synopsis Power GaN Devices by : Matteo Meneghini
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
