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Download or read book International Electron Devices Meeting, 1998 written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 : 9780780347762
Total Pages : 1046 pages
Book Rating : 4.3/5 (477 download)
Download or read book International Electron Devices Meeting, 1998, San Francisco, December 6-9, 1998 written by and published by . This book was released on 1998 with total page 1046 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 : 9780780347762
Total Pages : pages
Book Rating : 4.3/5 (477 download)
Download or read book International Electron Devices Meeting 1998 written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : IEEE Electron Devices Society
Publisher : Institute of Electrical & Electronics Engineers(IEEE)
ISBN 13 : 9780780347779
Total Pages : 980 pages
Book Rating : 4.3/5 (477 download)
Download or read book Electron Devices Meeting (IEDM), 1998 International written by IEEE Electron Devices Society and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1999 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tended by the world's foremost experts in electron devices, this conference considers all the various types of electron devices available, including electron tubes, solid-state devices, & power devices. Also detailed are displays, sensors, processing, high voltage devices, & quantum & vacuum electronics. Partial Contents: CMOS Devices & Reliability; Detectors, Sensors & Displays; Integrated Circuits; Modeling & Simulation; Quantum Electronics & Compound Semiconductor Devices; Solid State Devices
Author : IEEE Electron Devices Society
Publisher : Institute of Electrical & Electronics Engineers(IEEE)
ISBN 13 : 9780780347748
Total Pages : 980 pages
Book Rating : 4.3/5 (477 download)
Download or read book 1998 International Electron Devices Meeting written by IEEE Electron Devices Society and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1999 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt: Attended by the world's foremost experts in electron devices, this conference considers all the various types of electron devices available, including electron tubes, solid-state devices, & power devices. Also detailed are displays, sensors, processing, high voltage devices, & quantum & vacuum electronics. Partial Contents: CMOS Devices & Reliability; Detectors, Sensors & Displays; Integrated Circuits; Modeling & Simulation; Quantum Electronics & Compound Semiconductor Devices; Solid State Devices
Author : Wai-Kai Chen
Publisher : CRC Press
ISBN 13 : 0203011503
Total Pages : 400 pages
Book Rating : 4.2/5 (3 download)
Download or read book VLSI Technology written by Wai-Kai Chen and published by CRC Press. This book was released on 2003-03-19 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: As their name implies, VLSI systems involve the integration of various component systems. While all of these components systems are rooted in semiconductor manufacturing, they involve a broad range of technologies. This volume of the Principles and Applications of Engineering series examines the technologies associated with VLSI systems, including
Author : Arokia Nathan
Publisher : John Wiley & Sons
ISBN 13 : 139420244X
Total Pages : 469 pages
Book Rating : 4.3/5 (942 download)
Download or read book 75th Anniversary of the Transistor written by Arokia Nathan and published by John Wiley & Sons. This book was released on 2023-08-01 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: 75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.
Download or read book International Electron Devices Meeting written by and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1351834762
Total Pages : 195 pages
Book Rating : 4.3/5 (518 download)
Download or read book Measurement and Modeling of Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 195 pages. Available in PDF, EPUB and Kindle. Book excerpt: When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.
Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1420066919
Total Pages : 472 pages
Book Rating : 4.4/5 (2 download)
Download or read book Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.
Author : Wai-Kai Chen
Publisher : CRC Press
ISBN 13 : 9781420049671
Total Pages : 1788 pages
Book Rating : 4.0/5 (496 download)
Download or read book The VLSI Handbook written by Wai-Kai Chen and published by CRC Press. This book was released on 2019-07-17 with total page 1788 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the years, the fundamentals of VLSI technology have evolved to include a wide range of topics and a broad range of practices. To encompass such a vast amount of knowledge, The VLSI Handbook focuses on the key concepts, models, and equations that enable the electrical engineer to analyze, design, and predict the behavior of very large-scale integrated circuits. It provides the most up-to-date information on IC technology you can find. Using frequent examples, the Handbook stresses the fundamental theory behind professional applications. Focusing not only on the traditional design methods, it contains all relevant sources of information and tools to assist you in performing your job. This includes software, databases, standards, seminars, conferences and more. The VLSI Handbook answers all your needs in one comprehensive volume at a level that will enlighten and refresh the knowledge of experienced engineers and educate the novice. This one-source reference keeps you current on new techniques and procedures and serves as a review for standard practice. It will be your first choice when looking for a solution.
Author : Abhishek Kumar
Publisher : John Wiley & Sons
ISBN 13 : 1119910390
Total Pages : 244 pages
Book Rating : 4.1/5 (199 download)
Download or read book Machine Learning Techniques for VLSI Chip Design written by Abhishek Kumar and published by John Wiley & Sons. This book was released on 2023-08-01 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: MACHINE LEARNING TECHNIQUES FOR VLSI CHIP DESIGN This cutting-edge new volume covers the hardware architecture implementation, the software implementation approach, the efficient hardware of machine learning applications with FPGA or CMOS circuits, and many other aspects and applications of machine learning techniques for VLSI chip design. Artificial intelligence (AI) and machine learning (ML) have, or will have, an impact on almost every aspect of our lives and every device that we own. AI has benefitted every industry in terms of computational speeds, accurate decision prediction, efficient machine learning (ML), and deep learning (DL) algorithms. The VLSI industry uses the electronic design automation tool (EDA), and the integration with ML helps in reducing design time and cost of production. Finding defects, bugs, and hardware Trojans in the design with ML or DL can save losses during production. Constraints to ML-DL arise when having to deal with a large set of training datasets. This book covers the learning algorithm for floor planning, routing, mask fabrication, and implementation of the computational architecture for ML-DL. The future aspect of the ML-DL algorithm is to be available in the format of an integrated circuit (IC). A user can upgrade to the new algorithm by replacing an IC. This new book mainly deals with the adaption of computation blocks like hardware accelerators and novel nano-material for them based upon their application and to create a smart solution. This exciting new volume is an invaluable reference for beginners as well as engineers, scientists, researchers, and other professionals working in the area of VLSI architecture development.
Author : Daniel R. Gamota
Publisher : Springer Science & Business Media
ISBN 13 : 1441990747
Total Pages : 712 pages
Book Rating : 4.4/5 (419 download)
Download or read book Printed Organic and Molecular Electronics written by Daniel R. Gamota and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt: Printed Organic And Molecular Electronics was compiled to create a reference that included existing knowledge from the most renowned industry, academic, and government experts in the fields of organic semiconductor technology, graphic arts printing, micro-contact printing, and molecular electronics. It is divided into sections that consist of the most critical topics required for one to develop a strong understanding of the states of these technologies and the paths for taking them from R&D to the hands of consumers on a massive scale. As such, the book provides both theory as well as technology development results and trends.
Author : Gang He
Publisher : John Wiley & Sons
ISBN 13 : 3527646361
Total Pages : 560 pages
Book Rating : 4.5/5 (276 download)
Download or read book High-k Gate Dielectrics for CMOS Technology written by Gang He and published by John Wiley & Sons. This book was released on 2012-08-10 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.
Author : D. Nirmal
Publisher : CRC Press
ISBN 13 : 0429862520
Total Pages : 446 pages
Book Rating : 4.4/5 (298 download)
Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author : Ban Wong
Publisher : John Wiley & Sons
ISBN 13 : 0471678864
Total Pages : 413 pages
Book Rating : 4.4/5 (716 download)
Download or read book Nano-CMOS Circuit and Physical Design written by Ban Wong and published by John Wiley & Sons. This book was released on 2005-04-08 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.
Author : David J Dumin
Publisher : World Scientific
ISBN 13 : 981448945X
Total Pages : 281 pages
Book Rating : 4.8/5 (144 download)
Download or read book Oxide Reliability: A Summary Of Silicon Oxide Wearout, Breakdown, And Reliability written by David J Dumin and published by World Scientific. This book was released on 2002-01-18 with total page 281 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.
