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Wide Band Gap Nanowires For Light Emitting Diodes
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Book Synopsis Wide Bandgap Light Emitting Materials And Devices by : Gertrude F. Neumark
Download or read book Wide Bandgap Light Emitting Materials And Devices written by Gertrude F. Neumark and published by John Wiley & Sons. This book was released on 2008-01-08 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide bandgap light emitters include laser diodes and light-emitting diodes (LED), the most modern diodes widely used in current technologies as microelectronics and optoelectronics. Rapid advances have been made during the last few years, with the result that more research is devoted to applications in line with the expanding market for optoelectronics. This volume deals with recent research results on wide bandgap light emitting materials, introducing new concepts for devices based on these materials. The editors, scientists with the best reputations, have invited authors from different institutions who are acknowledged researchers in the field as well as being involved in industrial applications. They represent several lines of research: III-nitride compounds, ZnO and ZnSe, the most promising materials for device applications.
Book Synopsis Wide Band Gap Semiconductor Nanowires 2 by : Vincent Consonni
Download or read book Wide Band Gap Semiconductor Nanowires 2 written by Vincent Consonni and published by John Wiley & Sons. This book was released on 2014-08-08 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices.
Book Synopsis Wide Band-gap Nanowires for Light Emitting Diodes by : Jordan Paul Chesin
Download or read book Wide Band-gap Nanowires for Light Emitting Diodes written by Jordan Paul Chesin and published by . This book was released on 2015 with total page 155 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide band-gap nanowires composed of GaN and ZnO are promising materials for unique designs and potential efficiency improvement of light emitting diodes (LEDs) for solid state lighting. The large surface-to-volume ratio of nanowires provides facile strain-relaxation such that nanowires can be grown on substrates with a large lattice mismatch and remain free of threading dislocations. Specifically, the growth of wide band-gap nanowires directly on Si substrates is a promising platform for the fabrication of wafer-scale nanowire array-based LEDs. While nanowire-based LEDs have been previously demonstrated, there has been no work directly comparing the different potential designs of nanowire-based LEDs addressing how material-specific properties affect the light extraction and internal quantum efficiency (IQE). Furthermore, for scalable fabrication of nanowire array-based LEDs on Si a large degree of control over the nanowire synthesis is necessary, especially with regard to the nanowire length uniformity, vertical alignment relative to the growth substrate and the nanowire areal density. In this work we directly compare feasible designs for GaN-InGaN nanowire-based LEDs using a combination of photonic simulation and modeling. We compared the directed external quantum efficiency of III-nitride LEDs on silicon based on axial and radial nanowire heterostructures, considering m- and c-directional nanowires. The directed extraction efficiency was calculated using photonic simulations and the IQE was estimated using the A-B-C model. We found that m-directional axial heterostructures have the highest directed extraction efficiency, due to the strong polarization anisotropy of III-nitrides, and display similar IQE as c-directional axial heterostructures. By combining IQE and directed extraction, a range of expected directed external quantum efficiencies (EQEs) reveal that m-directional axial heterostructures have EQEs up to three times that of c-directional axial heterostructures, providing guidelines for the design of future III-nitride nanowire-based LEDs. While III-nitride nanowires are promising candidates, ZnO is an alternative with a higher exciton binding energy and excellent optical properties. To create a platform for the fabrication of ZnO nanowire array-based LEDs on Si, the growth of ZnO was investigated primarily using ZnO solution-processed seed-layers in vapor transport and condensation growth at high temperatures. Due to dependency of the carbothermal reduction of ZnO powder, which acts as the precursor source in the growth, the nanowire areal density was dependent on O2 flow. At low nanowire areal density, growth proceeded in a regime in which continuous nucleation of nanowires occurred throughout the growth, resulting in nanowires with a fixed aspect ratio, but widely varying lengths. At higher nanowire areal densities, the nanowires competed for source precursors in a surface-diffusion limited regime of growth in which the growth rate was dependent upon the nanowire diameter. We observed a critical nucleation diameter for nanowires in the continuous-nucleation regime, which was higher at lower oxygen flow rates. Thus, to achieve length uniformity we developed a two-stage growth method in which nanowires are nucleated at low oxygen flow in the continuous nucleation regime to set the nanowire diameter. In the second stage of growth, where conditions were shifted to the surface-diffusion limited regime, the large diameters set by the first stage of growth were designed to be in the range at which the growth rate does not vary substantially with diameter. The concept of this approach was extended to include control over the nanowire areal density, using sparse ZnO seed-layers. These ZnO nanowires retain excellent optical properties and we observed both demonstrative ptype and n-type doping, dependent on processing conditions, using individual nanowire electrical characterization. Thus, by achieving ZnO nanowire arrays with controlled nanowire areal density, excellent length uniformity and vertical alignment relative to the substrate, we have demonstrated a promising platform for the fabrication of scalable ZnO nanowire array-based LEDs.
Book Synopsis Wide Band Gap Semiconductor Nanowires 1 by : Vincent Consonni
Download or read book Wide Band Gap Semiconductor Nanowires 1 written by Vincent Consonni and published by John Wiley & Sons. This book was released on 2014-08-08 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanisms of ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices.
Book Synopsis Wide Band Gap Semiconductor Nanowires 2 by : Vincent Consonni
Download or read book Wide Band Gap Semiconductor Nanowires 2 written by Vincent Consonni and published by John Wiley & Sons. This book was released on 2014-09-15 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices.
Book Synopsis Wide Bandgap Nanowires by : Tuan Anh Pham
Download or read book Wide Bandgap Nanowires written by Tuan Anh Pham and published by John Wiley & Sons. This book was released on 2022-07-04 with total page 361 pages. Available in PDF, EPUB and Kindle. Book excerpt: WIDE BANDGAP NANOWIRES Comprehensive resource covering the synthesis, properties, and applications of wide bandgap nanowires This book presents first-hand knowledge on wide bandgap nanowires for sensor and energy applications. Taking a multidisciplinary approach, it brings together the materials science, physics and engineering aspects of wide bandgap nanowires, an area in which research has been accelerating dramatically in the past decade. Written by four well-qualified authors who have significant experience in the field, sample topics covered within the work include: Nanotechnology-enabled fabrication of wide bandgap nanowires, covering bottom-up, top-down and hybrid approaches Electrical, mechanical, optical, and thermal properties of wide bandgap nanowires, which are the basis for realizing sensor and energy device applications Measurement of electrical conductivity and fundamental electrical properties of nanowires Applications of nanowires, such as in flame sensors, biological sensors, and environmental monitoring For materials scientists, electrical engineers and professionals involved in the semiconductor industry, this book serves as a completely comprehensive resource to understand the topic of wide bandgap nanowires and how they can be successfully used in practical applications.
Book Synopsis Wide Band Gap Semiconductor Nanowires 2 by : Vincent Consonni
Download or read book Wide Band Gap Semiconductor Nanowires 2 written by Vincent Consonni and published by Wiley-ISTE. This book was released on 2014-09-15 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices
Book Synopsis Wide Bandgap Light Emitting Materials And Devices by : Gertrude F. Neumark
Download or read book Wide Bandgap Light Emitting Materials And Devices written by Gertrude F. Neumark and published by John Wiley & Sons. This book was released on 2007-10-01 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide bandgap light emitters include laser diodes and light-emitting diodes (LED), the most modern diodes widely used in current technologies as microelectronics and optoelectronics. Rapid advances have been made during the last few years, with the result that more research is devoted to applications in line with the expanding market for optoelectronics. This volume deals with recent research results on wide bandgap light emitting materials, introducing new concepts for devices based on these materials. The editors, scientists with the best reputations, have invited authors from different institutions who are acknowledged researchers in the field as well as being involved in industrial applications. They represent several lines of research: III-nitride compounds, ZnO and ZnSe, the most promising materials for device applications.
Book Synopsis Micro- and Nanotechnology of Wide Bandgap Semiconductors by : Anna B Piotrowska
Download or read book Micro- and Nanotechnology of Wide Bandgap Semiconductors written by Anna B Piotrowska and published by Mdpi AG. This book was released on 2021-12-20 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well 'green' power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective - Area Metalorganic Vapour - Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices.
Book Synopsis Novel Compound Semiconductor Nanowires by : Fumitaro Ishikawa
Download or read book Novel Compound Semiconductor Nanowires written by Fumitaro Ishikawa and published by CRC Press. This book was released on 2017-10-17 with total page 549 pages. Available in PDF, EPUB and Kindle. Book excerpt: One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.
Book Synopsis Semiconductor Nanowires II: Properties and Applications by :
Download or read book Semiconductor Nanowires II: Properties and Applications written by and published by Academic Press. This book was released on 2016-01-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Nanowires: Part B, and Volume 94 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires. Includes experts contributors who review the most important recent literature Contains a broad view, including examination of semiconductor nanowires
Download or read book Nanowires written by Ram K. Gupta and published by CRC Press. This book was released on 2023-03-14 with total page 429 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive resource covers the fundamentals of synthesis, characterizations, recent progress, and applications of nanowires for many emerging applications. Early chapters address their unique properties and morphology that enable their electronic, optical, and mechanical properties to be tuned. Later chapters address future perspectives and future challenges in areas where nanowires could provide possible solutions. All chapters are written by global experts, making this a suitable textbook for students and an up-to-date handbook for researchers and industry professionals working in physics, chemistry, materials, energy, biomedical, and nanotechnology. Covers materials, chemistry, and technologies for nanowires. Covers the state-of-the-art progress and challenges in nanowires. Provides fundamentals of the electrochemical behavior of various electrochemical devices and sensors. Offers insights on tuning the properties of nanowires for many emerging applications. Provides a new direction and understanding to scientists, researchers, and students.
Book Synopsis Annual Review of Nano Research by : Guozhong Cao
Download or read book Annual Review of Nano Research written by Guozhong Cao and published by World Scientific. This book was released on 2008 with total page 674 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second volume of the Annual Review of Nano Research focuses mainly on nanofabrication, nanomaterials and nanostructures, and energy application of nanomaterials. All of the review chapters are contributed by well-published scientists and bring the most recent advancements in selected topics to the readers. This review volume will perfectly serve dual purposes: either as an excellent introduction to scientists whose expertise lies in different fields but who are interested in learning about nanotechnology, or as a quick reference for experts active in the field of nanotechnology and nanoscience. Book jacket.
Book Synopsis Handbook of Zinc Oxide and Related Materials by : Zhe Chuan Feng
Download or read book Handbook of Zinc Oxide and Related Materials written by Zhe Chuan Feng and published by Taylor & Francis. This book was released on 2012-09-26 with total page 1008 pages. Available in PDF, EPUB and Kindle. Book excerpt: Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering a
Book Synopsis Handbook of Solid-State Lighting and LEDs by : Zhe Chuan Feng
Download or read book Handbook of Solid-State Lighting and LEDs written by Zhe Chuan Feng and published by CRC Press. This book was released on 2017-06-12 with total page 723 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook addresses the development of energy-efficient, environmentally friendly solid-state light sources, in particular semiconductor light emitting diodes (LEDs) and other solid-state lighting devices. It reflects the vast growth of this field and impacts in diverse industries, from lighting to communications, biotechnology, imaging, and medicine. The chapters include coverage of nanoscale processing, fabrication of LEDs, light diodes, photodetectors and nanodevices, characterization techniques, application, and recent advances. Readers will obtain an understanding of the key properties of solid-state lighting and LED devices, an overview of current technologies, and appreciation for the challenges remaining. The handbook will be useful to material growers and evaluators, device design and processing engineers, newcomers, students, and professionals in the field.
Book Synopsis Controlled Growth of Nanomaterials by : Lide Zhang
Download or read book Controlled Growth of Nanomaterials written by Lide Zhang and published by World Scientific. This book was released on 2007 with total page 479 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces the latest methods for the controlled growth of nanomaterial systems. The coverage includes simple and complex nanomaterial systems, ordered nanostructures and complex nanostructure arrays, and the essential conditions for the controlled growth of nanostructures with different morphologies, sizes, compositions, and microstructures. The book also discusses the dynamics of controlled growth and thermodynamic characteristics of two-dimensional nanorestricted systems. The authors introduce various novel synthesis methods for nanomaterials and nanostructures, such as hierarchical growth, heterostructures growth, doping growth and some developing template synthesis methods. In addition to discussing applications, the book reviews developing trends in nanomaterials and nanostructures.
Book Synopsis Wide Band Gap Semiconductor Nanowires 1 by : Vincent Consonni
Download or read book Wide Band Gap Semiconductor Nanowires 1 written by Vincent Consonni and published by . This book was released on 2014 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presenting the similarities and differences between GaN and ZnO materials, this book is devoted to the specific case of wires obtained from a given kind of semiconductors, namely the semiconducting materials with a direct and wide band gap (WBG). --
