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Author : Norman G. Einspruch
Publisher :
ISBN 13 : 9780122341182
Total Pages : 370 pages
Book Rating : 4.3/5 (411 download)
Download or read book VLSI Electronics: Advanced MOS device physics written by Norman G. Einspruch and published by . This book was released on 1981 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Norman Einspruch
Publisher : Elsevier
ISBN 13 : 0323153135
Total Pages : 383 pages
Book Rating : 4.3/5 (231 download)
Download or read book Advanced MOS Device Physics written by Norman Einspruch and published by Elsevier. This book was released on 2012-12-02 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.
Author : Norman G. Einspruch
Publisher :
ISBN 13 : 9780122341182
Total Pages : 21 pages
Book Rating : 4.3/5 (411 download)
Download or read book VLSI Electronics Microstructure Science written by Norman G. Einspruch and published by . This book was released on 1989 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Chandan Kumar Sarkar
Publisher : CRC Press
ISBN 13 : 1466512660
Total Pages : 462 pages
Book Rating : 4.4/5 (665 download)
Download or read book Technology Computer Aided Design written by Chandan Kumar Sarkar and published by CRC Press. This book was released on 2018-09-03 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt: Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
Author : Narain Arora
Publisher : World Scientific
ISBN 13 : 9814365491
Total Pages : 632 pages
Book Rating : 4.8/5 (143 download)
Download or read book Mosfet Modeling for VLSI Simulation written by Narain Arora and published by World Scientific. This book was released on 2007-02-14 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: ' A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today''s (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs. Contents: OverviewReview of Basic Semiconductor and pn Junction TheoryMOS Transistor Structure and OperationMOS CapacitorThreshold VoltageMOSFET DC ModelDynamic ModelModeling Hot-Carrier EffectsData Acquisition and Model Parameter MeasurementsModel Parameter Extraction Using Optimization MethodSPICE Diode and MOSFET Models and Their ParametersStatistical Modeling and Worst-Case Design Parameters Readership: Integrated circuit chip designers, device model developers and circuit simulators. '
Author : A. B. Bhattacharyya
Publisher : John Wiley & Sons
ISBN 13 : 0470823437
Total Pages : 512 pages
Book Rating : 4.4/5 (78 download)
Download or read book Compact MOSFET Models for VLSI Design written by A. B. Bhattacharyya and published by John Wiley & Sons. This book was released on 2009-07-23 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design , A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI development, allowing readers to stay ahead of the curve, despite the relentless evolution of new models. Adopts a unified approach to guide students through the confusing array of MOSFET models Links MOS physics to device models to prepare practitioners for real-world design activities Helps fabless designers bridge the gap with off-site foundries Features rich coverage of: quantum mechanical related phenomena Si-Ge strained-Silicon substrate non-classical structures such as Double Gate MOSFETs Presents topics that will prepare readers for long-term developments in the field Includes solutions in every chapter Can be tailored for use among students and professionals of many levels Comes with MATLAB code downloads for independent practice and advanced study This book is essential for students specializing in VLSI Design and indispensible for design professionals in the microelectronics and VLSI industries. Written to serve a number of experience levels, it can be used either as a course textbook or practitioner’s reference. Access the MATLAB code, solution manual, and lecture materials at the companion website: www.wiley.com/go/bhattacharyya
Author : J.-P. Colinge
Publisher : Springer Science & Business Media
ISBN 13 : 9780387285238
Total Pages : 460 pages
Book Rating : 4.2/5 (852 download)
Download or read book Physics of Semiconductor Devices written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2005-10-03 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt: Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described. Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner.
Author : Yuan Taur
Publisher : Cambridge University Press
ISBN 13 : 1108480020
Total Pages : 627 pages
Book Rating : 4.1/5 (84 download)
Download or read book Fundamentals of Modern VLSI Devices written by Yuan Taur and published by Cambridge University Press. This book was released on 2021-12-02 with total page 627 pages. Available in PDF, EPUB and Kindle. Book excerpt: A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.
Author : Norman G. Einspruch
Publisher : Academic Press
ISBN 13 : 1483217728
Total Pages : 417 pages
Book Rating : 4.4/5 (832 download)
Download or read book VLSI Electronics written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics: Microstructure Science, Volume 5 considers trends for the future of very large scale integration (VLSI) electronics and the scientific base that supports its development. This book discusses the automation for VLSI manufacture, silicon material properties for VLSI circuitry, and high-performance computer packaging and thin-film multichip module. The nanometer-scale fabrication techniques, high-density CCD memories, and solid-state infrared imaging are also elaborated. This text likewise covers the impact of microelectronics upon radar systems and quantum-mechanical limitations on device performance. This volume is a good source for scientists and engineers who wish to become familiar with VLSI electronics, device designers concerned with the fundamental character of and limitations to device performance, systems architects who will be charged with tying VLSI circuits together, and engineers conducting work on the utilization of VLSI circuits in specific areas of application.
Author : Yuan Taur
Publisher : Cambridge University Press
ISBN 13 : 9781107635715
Total Pages : 0 pages
Book Rating : 4.6/5 (357 download)
Download or read book Fundamentals of Modern VLSI Devices written by Yuan Taur and published by Cambridge University Press. This book was released on 2013-05-02 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
Author : Narain D. Arora
Publisher : Springer Science & Business Media
ISBN 13 : 3709192471
Total Pages : 628 pages
Book Rating : 4.7/5 (91 download)
Download or read book MOSFET Models for VLSI Circuit Simulation written by Narain D. Arora and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
Author : Richard C. Dorf
Publisher : CRC Press
ISBN 13 : 1420003151
Total Pages : 888 pages
Book Rating : 4.4/5 (2 download)
Download or read book Electronics, Power Electronics, Optoelectronics, Microwaves, Electromagnetics, and Radar written by Richard C. Dorf and published by CRC Press. This book was released on 2018-10-03 with total page 888 pages. Available in PDF, EPUB and Kindle. Book excerpt: In two editions spanning more than a decade, The Electrical Engineering Handbook stands as the definitive reference to the multidisciplinary field of electrical engineering. Our knowledge continues to grow, and so does the Handbook. For the third edition, it has expanded into a set of six books carefully focused on a specialized area or field of study. Electronics, Power Electronics, Optoelectronics, Microwaves, Electromagnetics, and Radar represents a concise yet definitive collection of key concepts, models, and equations in these areas, thoughtfully gathered for convenient access. Electronics, Power Electronics, Optoelectronics, Microwaves, Electromagnetics, and Radar delves into the fields of electronics, integrated circuits, power electronics, optoelectronics, electromagnetics, light waves, and radar, supplying all of the basic information required for a deep understanding of each area. It also devotes a section to electrical effects and devices and explores the emerging fields of microlithography and power electronics. Articles include defining terms, references, and sources of further information. Encompassing the work of the world’s foremost experts in their respective specialties, Electronics, Power Electronics, Optoelectronics, Microwaves, Electromagnetics, and Radar features the latest developments, the broadest scope of coverage, and new material in emerging areas.
Author : Hussein Ballan
Publisher : Springer Science & Business Media
ISBN 13 : 1475754043
Total Pages : 294 pages
Book Rating : 4.4/5 (757 download)
Download or read book High Voltage Devices and Circuits in Standard CMOS Technologies written by Hussein Ballan and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt: Standard voltages used in today's ICs may vary from about 1.3V to more than 100V, depending on the technology and the application. High voltage is therefore a relative notion. High Voltage Devices and Circuits in Standard CMOS Technologies is mainly focused on standard CMOS technologies, where high voltage (HV) is defined as any voltage higher than the nominal (low) voltage, i.e. 5V, 3.3V, or even lower. In this standard CMOS environment, IC designers are more and more frequently confronted with HV problems, particularly at the I/O level of the circuit. In the first group of applications, a large range of industrial or consumer circuits either require HV driving capabilities, or are supposed to work in a high-voltage environment. This includes ultrasonic drivers, flat panel displays, robotics, automotive, etc. On the other hand, in the emerging field of integrated microsystems, MEMS actuators mainly make use of electrostatic forces involving voltages in the typical range of 30 to 60V. Last but not least, with the advent of deep sub-micron and/or low-power technologies, the operating voltage tends towards levels ranging from 1V to 2.5V, while the interface needs to be compatible with higher voltages, such as 5V. For all these categories of applications, it is usually preferable to perform most of the signal processing at low voltage, while the resulting output rises to a higher voltage level. Solving this problem requires some special actions at three levels: technology, circuit design and layout. High Voltage Devices and Circuits in Standard CMOS Technologies addresses these topics in a clear and organized way. The theoretical background is supported by practical information and design examples. It is an invaluable reference for researchers and professionals in both the design and device communities.
Author : Jerry C. Whitaker
Publisher : CRC Press
ISBN 13 : 1351836374
Total Pages : 503 pages
Book Rating : 4.3/5 (518 download)
Download or read book Microelectronics written by Jerry C. Whitaker and published by CRC Press. This book was released on 2018-10-03 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: When it comes to electronics, demand grows as technology shrinks. From consumer and industrial markets to military and aerospace applications, the call is for more functionality in smaller and smaller devices. Culled from the second edition of the best-selling Electronics Handbook, Microelectronics, Second Edition presents a summary of the current state of microelectronics and its innovative directions. This book focuses on the materials, devices, and applications of microelectronics technology. It details the IC design process and VLSI circuits, including gate arrays, programmable logic devices and arrays, parasitic capacitance, and transmission line delays. Coverage ranges from thermal properties and semiconductor materials to MOSFETs, digital logic families, memory devices, microprocessors, digital-to-analog and analog-to-digital converters, digital filters, and multichip module technology. Expert contributors discuss applications in machine vision, ad hoc networks, printing technologies, and data and optical storage systems. The book also includes defining terms, references, and suggestions for further reading. This edition features two new sections on fundamental properties and semiconductor devices. With updated material and references in every chapter, Microelectronics, Second Edition is an essential reference for work with microelectronics, electronics, circuits, systems, semiconductors, logic design, and microprocessors.
Author : Richard C. Dorf
Publisher : CRC Press
ISBN 13 : 1420049755
Total Pages : 3672 pages
Book Rating : 4.4/5 (2 download)
Download or read book The Electrical Engineering Handbook - Six Volume Set written by Richard C. Dorf and published by CRC Press. This book was released on 2018-12-14 with total page 3672 pages. Available in PDF, EPUB and Kindle. Book excerpt: In two editions spanning more than a decade, The Electrical Engineering Handbook stands as the definitive reference to the multidisciplinary field of electrical engineering. Our knowledge continues to grow, and so does the Handbook. For the third edition, it has grown into a set of six books carefully focused on specialized areas or fields of study. Each one represents a concise yet definitive collection of key concepts, models, and equations in its respective domain, thoughtfully gathered for convenient access. Combined, they constitute the most comprehensive, authoritative resource available. Circuits, Signals, and Speech and Image Processing presents all of the basic information related to electric circuits and components, analysis of circuits, the use of the Laplace transform, as well as signal, speech, and image processing using filters and algorithms. It also examines emerging areas such as text to speech synthesis, real-time processing, and embedded signal processing. Electronics, Power Electronics, Optoelectronics, Microwaves, Electromagnetics, and Radar delves into the fields of electronics, integrated circuits, power electronics, optoelectronics, electromagnetics, light waves, and radar, supplying all of the basic information required for a deep understanding of each area. It also devotes a section to electrical effects and devices and explores the emerging fields of microlithography and power electronics. Sensors, Nanoscience, Biomedical Engineering, and Instruments provides thorough coverage of sensors, materials and nanoscience, instruments and measurements, and biomedical systems and devices, including all of the basic information required to thoroughly understand each area. It explores the emerging fields of sensors, nanotechnologies, and biological effects. Broadcasting and Optical Communication Technology explores communications, information theory, and devices, covering all of the basic information needed for a thorough understanding of these areas. It also examines the emerging areas of adaptive estimation and optical communication. Computers, Software Engineering, and Digital Devices examines digital and logical devices, displays, testing, software, and computers, presenting the fundamental concepts needed to ensure a thorough understanding of each field. It treats the emerging fields of programmable logic, hardware description languages, and parallel computing in detail. Systems, Controls, Embedded Systems, Energy, and Machines explores in detail the fields of energy devices, machines, and systems as well as control systems. It provides all of the fundamental concepts needed for thorough, in-depth understanding of each area and devotes special attention to the emerging area of embedded systems. Encompassing the work of the world's foremost experts in their respective specialties, The Electrical Engineering Handbook, Third Edition remains the most convenient, reliable source of information available. This edition features the latest developments, the broadest scope of coverage, and new material on nanotechnologies, fuel cells, embedded systems, and biometrics. The engineering community has relied on the Handbook for more than twelve years, and it will continue to be a platform to launch the next wave of advancements. The Handbook's latest incarnation features a protective slipcase, which helps you stay organized without overwhelming your bookshelf. It is an attractive addition to any collection, and will help keep each volume of the Handbook as fresh as your latest research.
Author : Daniel Foty
Publisher :
ISBN 13 :
Total Pages : 260 pages
Book Rating : 4.F/5 ( download)
Download or read book Proceedings of the Symposium on Low Temperature Electronic Device Operation written by Daniel Foty and published by . This book was released on 1991 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Yuhua Cheng
Publisher : Springer Science & Business Media
ISBN 13 : 0306470500
Total Pages : 467 pages
Book Rating : 4.3/5 (64 download)
Download or read book MOSFET Modeling & BSIM3 User’s Guide written by Yuhua Cheng and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.
