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Author : Feng Liu
Publisher :
ISBN 13 :
Total Pages : 146 pages
Book Rating : 4.:/5 (625 download)
Download or read book Vapor Growth and Characterization of Single Crystal Silicon Carbide written by Feng Liu and published by . This book was released on 2004 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Arne Rosengreen
Publisher :
ISBN 13 :
Total Pages : 26 pages
Book Rating : 4.:/5 (227 download)
Download or read book Growth, Processing, and Characterization of Beta-silicon Carbide Single Crystals written by Arne Rosengreen and published by . This book was released on 1969 with total page 26 pages. Available in PDF, EPUB and Kindle. Book excerpt: Equipment and growth procedures for growing beta-silicon carbide epitaxially on beta-silicon carbide substrates from methyltrichlorosilane in a carrier gas of hydrogen is described. Hall and resistivity measurements and electron spin resonance measurements are discussed. The results show that the quality of the epitaxially grown material is comparable with that of the best solution grown crystals. Processing steps such as oxidation, masking, and etching have been performed and simple electroluminescent diodes have been fabricated. (Author).
Author : Frank A. Halden
Publisher :
ISBN 13 :
Total Pages : 25 pages
Book Rating : 4.:/5 (227 download)
Download or read book Growth and Characterization of Beta-silicon Carbide Single Crystals written by Frank A. Halden and published by . This book was released on 1965 with total page 25 pages. Available in PDF, EPUB and Kindle. Book excerpt: Changes in crystal size and morphology were obtained by modifying the process for growing crystals of betasilicon carbide from solution in carbon-saturated melts. Well developed laths and plates were grown under conditions favoring dendritic growth mechanisms (low thermal gradient with moderate stirring). Polyhedral crystals grew under high thermal gradient conditions when high velocity stirring was employed. Three-dimensionaltype growth was also produced from a 73 wt percent ironsilicon alloy under conditions that normally produce lath-type growth. Uncorrected electron mobilities of 700 to 1000 sq cm/v-sec were measured at room temperature, and a few preliminary Hall measurements were made over the temperature range from 77 to 300 K. (Author).
Author : William R. Harding
Publisher :
ISBN 13 :
Total Pages : 112 pages
Book Rating : 4.:/5 (227 download)
Download or read book Growth and Characterization of Large High Purity Beta Silicon Carbide Single Crystals written by William R. Harding and published by . This book was released on 1970 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report summarizes the development program in the growth of large high purity beta silicon carbide crystals. Conditions for stable beta growth were partially established. Beta silicon carbide can be grown in the region of 2000-2200C and 28-42 microns pressure. Within this region, large beta crystals will grow by sublimation. Lang topographs of crystals were compared with etched surface structures and petrographic examination. Correlation among the results of these techniques was shown to exist. This analysis indicated the presence of large stacking faults within the structure as well as polytype intergrowths. Resistivity and Hall measurements were made with indications of highly compensated material. (Author).
Author : Mark A. Fanton
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (221 download)
Download or read book Growth of Single Crystal Silicon Carbide by Halide Chemical Vapor Deposition written by Mark A. Fanton and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J. R. Littler
Publisher :
ISBN 13 :
Total Pages : 24 pages
Book Rating : 4.3/5 (91 download)
Download or read book A Unique High-temperature, High-pressure Crystal Growth System for Silicon Carbide written by J. R. Littler and published by . This book was released on 1973 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: A high-pressure, high-temperature furnace system is described for crystal growth experiments using crucibles up to 13 cm in diameter and 26 cm high. The vertical temperature gradient is electronically controlled during growth such that the ends of the crucible can be maintained at temperatures above or below the crucible center. Temperatures up to 2800C can be maintained at pressures up to 50 atmospheres. A vacuum capability up to .000001 torr at 1800C has been incorporated into the system. Single crystals of alpha silicon carbide grown in this system at 2600C are described to illustrate its use. (Author).
Author : Robert F. Davis
Publisher :
ISBN 13 :
Total Pages : 33 pages
Book Rating : 4.:/5 (227 download)
Download or read book Single Crystal Epitaxy and Characterization of Beta-Silicon Carbide written by Robert F. Davis and published by . This book was released on 1980 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt: The project involves the development of low pressure chemical vapor deposition and r-f sputtering techniques for the synthesis of single crystal thin films of beta-SiC. The CVD apparatus is being produced in-house and a detailed description of the design is provided herein. Theoretical CVD phase diagrams of the Si-C-H system are also being produced as a function of Si/Si+C and total pressure. Both reactive sputtering of Si in CH4 and normal sputtering of a SiC target are being readied. (Author).
Author : Peter Friedrichs
Publisher : John Wiley & Sons
ISBN 13 : 3527629068
Total Pages : 528 pages
Book Rating : 4.5/5 (276 download)
Download or read book Silicon Carbide written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
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Author : Kenneth George Irvine
Publisher :
ISBN 13 :
Total Pages : 170 pages
Book Rating : 4.:/5 (3 download)
Download or read book The Growth and Characterization of Beta Silicon Carbide ([beta]-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor written by Kenneth George Irvine and published by . This book was released on 1992 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (136 download)
Download or read book Kinetics of Silicon Carbide Single Crystal Growth in the Physical Vapor Transport Process written by and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Kenneth George Irvine
Publisher :
ISBN 13 :
Total Pages : 170 pages
Book Rating : 4.:/5 (133 download)
Download or read book The Growth and Characterization of Beta Silicon Carbide (β-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor written by Kenneth George Irvine and published by . This book was released on 1992 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Shaoping Wang
Publisher :
ISBN 13 :
Total Pages : 342 pages
Book Rating : 4.:/5 (318 download)
Download or read book Characterization of Growth Defects in Silicon Carbide Single Crystals by Synchrotron X-ray Topography written by Shaoping Wang and published by . This book was released on 1995 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Govindhan Dhanaraj
Publisher : Springer Science & Business Media
ISBN 13 : 3540747613
Total Pages : 1823 pages
Book Rating : 4.5/5 (47 download)
Download or read book Springer Handbook of Crystal Growth written by Govindhan Dhanaraj and published by Springer Science & Business Media. This book was released on 2010-10-20 with total page 1823 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.
Author : Peter Friedrichs
Publisher : Wiley-VCH
ISBN 13 : 9783527409532
Total Pages : 528 pages
Book Rating : 4.4/5 (95 download)
Download or read book Silicon Carbide written by Peter Friedrichs and published by Wiley-VCH. This book was released on 2009-12-02 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
Author : Zhenjiang Yu
Publisher :
ISBN 13 :
Total Pages : 150 pages
Book Rating : 4.:/5 (279 download)
Download or read book Crystal Growth and Characterization of Silicon Carbide and Aluminum Nitride Films written by Zhenjiang Yu and published by . This book was released on 1993 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : H. K. Henisch
Publisher : Elsevier
ISBN 13 : 1483152618
Total Pages : 379 pages
Book Rating : 4.4/5 (831 download)
Download or read book Silicon Carbide — 1968 written by H. K. Henisch and published by Elsevier. This book was released on 2013-10-22 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide — 1968 presents the proceedings of the International Conference on Silicon Carbide held in University Park, Pennsylvania on October 20-23, 1968. The book covers papers about the perspectives on silicon carbide; several problems in the development of silicon carbide semiconductors, such as the control of crystal structure and analysis. The thermal properties of beta-silicon carbide from 20 to 2000 degrees and the influence of impurities on the growth of silicon carbide crystals in chemical reactions and by recrystallization are also discussed. The book then presents papers about silicon carbide single crystal growth using the Norton process; the principles of solution and traveling solvent growth of silicon carbide; the growth of silicon carbide from cobalt-silicon solutions; and the growth of silicon carbide from vapor by the Bridgman-Stockbarger method. Papers about the growth of crystals and epitaxial layers of beta silicon carbide; the heteroepitaxy of beta-silicon carbide employing liquid metals; some aspects of disorder in silicon carbide; and the dependence of physical properties on polytype structure are also considered. The book describes topics about the optical properties of polytypes of silicon carbide as well as the phase stability of silicon carbide against nitrogen. Other papers about the physical and electronic properties of silicon carbide are also discussed in the book. People involved in semiconductor industries will find the book helpful.
Author :
Publisher :
ISBN 13 :
Total Pages : 35 pages
Book Rating : 4.:/5 (227 download)
Download or read book Growth of Single Crystal Beta Silicon Carbide written by and published by . This book was released on 1992 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt: Beta-SiC is a promising, wide bandgap material for high power electronic devices capable of operation at high temperatures. Its high saturation velocity, high breakdown electric field, and high thermal conductivity point to superior performance for high frequency applications. The successful fabrication of Beta-SiC devices requires high quality films to be epitaxially grown on lattice-matched substrate materials. Single crystals of Beta-SiC offer the optimum substrate material for lattice matching. The major problem to be overcome in the growth of large single crystals of Beta-SiC is polytype alpha-SiC formation. Cubic Beta-SiC crystallizes only below 2000 deg C. Above this temperature, SiC undergoes a phase transformation from the Beta-to the alpha-phase. In Phase I, we investigated two crystal growth techniques: sublimation and gas-vapor transport. We were able to grow small 3C-SiC crystals by both methods.
