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Ultrafast Measurement Of Carrier Transport In Gaas Electronic And Optoelectronic Devices
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Book Synopsis Ultrafast Measurement of Carrier Transport in GaAs Electronic and Optoelectronic Devices by : Julie Ann Sheridan
Download or read book Ultrafast Measurement of Carrier Transport in GaAs Electronic and Optoelectronic Devices written by Julie Ann Sheridan and published by . This book was released on 1995 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2003 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Frederick J. Leonberger Publisher :Springer Science & Business Media ISBN 13 :3642729703 Total Pages :303 pages Book Rating :4.6/5 (427 download)
Book Synopsis Picosecond Electronics and Optoelectronics II by : Frederick J. Leonberger
Download or read book Picosecond Electronics and Optoelectronics II written by Frederick J. Leonberger and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 303 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the past five years, there has been an enormous increase in the inter est in and understanding of electronic and optoelectronic devices operating in the picosecond (multigigahertz) range. This has been fueled in a sig nificant way by the spectacular advances in picosecond laser technology, electro optic sampling, III-V devices, and wideband fiber optic systems. Partly to address these advances, a new conference jointly sponsored by the IEEE Lasers and Electrooptics Society (IEEE (LEOS)) and the Op tical Society of America (OSA) was founded and its first meeting held in March 1985. The purpose of this meeting was to bring together work ers in the areas of electronics and optoelectronics who share a common interest in the physics and technology of picosecond solid-state electronic and optoelectronic devices, their multigigahertz applications, and ultrafast measurement techniques. Emphasis was placed on the interdisciplinary as pects of these areas, since each area is covered by its own topical meeting. This meeting was quite successful and led to a second meeting, of which this volume forms the proceedings.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Computational Electronics by : Karl Hess
Download or read book Computational Electronics written by Karl Hess and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 273 pages. Available in PDF, EPUB and Kindle. Book excerpt: Large computational resources are of ever increasing importance for the simulation of semiconductor processes, devices and integrated circuits. The Workshop on Computational Electronics was intended to be a forum for the dis cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for the solution of the Boltzmann transport equation; and computational approaches to quantum transport which are relevant to novel devices based on quantum interference and resonant tunneling phenomena. Our goal was to bring together researchers from various disciplines that contribute to the advancement of device simulation. These include Computer Sci ence, Electrical Engineering, Applied Physics and Applied Mathematics. The suc cess of this multidisciplinary formula was proven by numerous interactions which took place at the Workshop and during the following three-day Short Course on Computational Electronics. The format of the course, including a number of tutorial lectures, and the large attendance of graduate students, stimulated many discussions and has proven to us once more the importance of cross-fertilization between the different disciplines.
Book Synopsis CARRIER DYNAMICS IN III-V MATERIALS AND HETERO-STRUCTURES STUDIED BY ULTRAFAST LASER TECHNIQUES (SEMICONDUCTORS, OPTOELECTRONICS, GROUP III V MATERIALS). by : SHANTANU GUPTA
Download or read book CARRIER DYNAMICS IN III-V MATERIALS AND HETERO-STRUCTURES STUDIED BY ULTRAFAST LASER TECHNIQUES (SEMICONDUCTORS, OPTOELECTRONICS, GROUP III V MATERIALS). written by SHANTANU GUPTA and published by . This book was released on 1992 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: transport across an MQW region.
Book Synopsis Semiconductor Materials for Optoelectronics and LTMBE Materials by : J.P. Hirtz
Download or read book Semiconductor Materials for Optoelectronics and LTMBE Materials written by J.P. Hirtz and published by Elsevier. This book was released on 2016-07-29 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.
Book Synopsis Dye Lasers: 25 Years by : Michael Stuke
Download or read book Dye Lasers: 25 Years written by Michael Stuke and published by Springer Science & Business Media. This book was released on 2005-08-05 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: In Dye Lasers: 25 years, the pioneers and leading experts in the field of dye lasers present the current status and bright future perspectives of dye lasers and their applications in physics and chemistry. Particular topics covered include: new sources of ultrashort pulses, novel aspects of resonator design and imaging for femtosecond lasers, amplification schemes to terawatt intensity regimes, optics and high-resolution spectroscopy of atoms and molecules, and electro-optic and plasma physics applications of ultrashort and ultra-intense laser pulses. Since its invention in 1966, the dye laser has revolutionized many fields of science and technology. Questions of fundamental interest in physics and chemistry can now be answered: it is possible to test fundamental quantum physics in single-atom experiments and regioselective photochemistry in complexes can be monitored directlyusing dye-laser diagnostic methods. In this book the latest results (and most recent references) are presented for new sources of ultrashort pulses from the visible to the VUV, together with experimental details of ultrahigh-resolution spectroscopy of atoms and molecules, laser diagnostics of the dynamics of elementary chemical reactions, and ultrahigh intensity sources for laser target interaction.
Book Synopsis Ultrafast Phenomena in Semiconductors by :
Download or read book Ultrafast Phenomena in Semiconductors written by and published by . This book was released on 2001 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Highlights Of Light Spectroscopy On Semiconductors Holsos 95 - Proceedings Of The Workshop by : A D'andrea
Download or read book Highlights Of Light Spectroscopy On Semiconductors Holsos 95 - Proceedings Of The Workshop written by A D'andrea and published by World Scientific. This book was released on 1996-08-30 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of this volume is to provide an overview on the state-of-art in optical spectroscopy covering the focal theoretical and experimental aspects of the last research developments on semiconductor field. Some key topics in semiconductor science, namely: optical spectroscopy as a tool for in situ epitaxial growth monitoring and non-destructive surface and interface characterizations in mesocopic superstructures are addressed in the book. A non-exhaustive list of arguments is: surface and interface characterization, chemical reactions in semiconductor surfaces, heterostructures, quantum wells and superlattices, nanostructures and microlasers.
Download or read book Microwave Photonics written by Chi H. Lee and published by CRC Press. This book was released on 2006-12-07 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wireless, optical, and electronic networks continue to converge, prompting heavy research into the interface between microwave electronics, ultrafast optics, and photonic technologies. New developments arrive nearly as fast as the photons under investigation, and their commercial impact depends on the ability to stay abreast of new findings, techni
Book Synopsis The Physics of Submicron Semiconductor Devices by : Harold L. Grubin
Download or read book The Physics of Submicron Semiconductor Devices written by Harold L. Grubin and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 729 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.
Book Synopsis Tunable Interface Non-linear Electron Transport in Semiconductor Nanowire Heterostructure and Its Application in Optoelectronics by : Guannan Chen
Download or read book Tunable Interface Non-linear Electron Transport in Semiconductor Nanowire Heterostructure and Its Application in Optoelectronics written by Guannan Chen and published by . This book was released on 2014 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: Understanding the effects of finite size and dimensionality on the interaction of light with nanoscale semiconductor heterostructure is central to identifying and exploiting novel modes in optoelectronic devices. In type-I heterostructured core-shell GaAs/AlxGa1-xAs nanowires, the real space transfer (RST) of photogenerated hot electrons across the interface from the GaAs core to the AlxGa1-xAs shell forms the basis of a new family of optoelectronic devices by a carefully designed and optimized nanofabrication process. Due to the large mobility difference, we observed negative differential resistance (NDR) on single nanowire devices. External modulation of the transfer rates, manifested as a large tunability of the voltage onset of NDR, is achieved using three different modes: electrostatic gating, incident photon flux, and photon energy. In this dissertation, the physics of coupling of external control to transfer rate was investigated. The combined influences of geometric confinement, heterojunction shape and carrier scattering on hot-electron transfer is discussed. Temperature-dependent transport study under monochromatic tunable laser illumination reveals an ultrafast carrier dynamics related to RST of excess carriers, which provides an insight into hot carrier cooling. Device element showing adjustable phase shift and frequency doubling of ac modulation is demonstrated. For a full understanding, Carrier transport properties are probed through electron beam induced current, which is capable of imaging sub-surface feature in excess carrier transport. Along with simulation of injected electron trajectories, selective probing of core and shell by tuning electron beam energies reveals axial and bias dependent transport along parallel channels. The drift and diffusion component of the excess carrier current is deconvoluted from a coupled decay length, from which lower than bulk shell electron mobility is extracted. A precise knowledge of band edge discontinuities at heterostructure interface is inevitable to understand electronic and optoelectronic properties where real space transfer is involved. We used a combined photocurrent and photoluminescence spectroscopic study, in GaAs/AlxGa1-xAs and GaAs/AlAs core-shell nanowire systems, to construct a band diagram of an individual heterostructure nanowire with high spectral resolution, enabling quantification of conduction band offsets. The thesis outlines a promising novel device paradigm with a well-studied carrier transport physics at heterostructure nanowires, which can be further extended to a broad range of semiconductor material systems.
Book Synopsis Ultrafast Phenomena in Semiconductors by : Steponas Asmontas
Download or read book Ultrafast Phenomena in Semiconductors written by Steponas Asmontas and published by Trans Tech Publications Ltd. This book was released on 1998-12-07 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 77 papers of the Proceedings of the 10th International Symposium on Ultrafast Phenomena in Semiconductors cover a broad range of rapid dynamic processes in semiconductors and high-Tc superconductors. The latest achievements in the understanding of low-dimensional structures, quantum transport and tunneling, high-speed electronics and photonics, chaos and noise, microwave and infrared radiation generation, and microdevices are presented. Volume is indexed by Thomson Reuters CPCI-S (WoS).
Book Synopsis Picosecond Electronics and Optoelectronics by : Gerard A. Mourou
Download or read book Picosecond Electronics and Optoelectronics written by Gerard A. Mourou and published by Springer. This book was released on 1985-09 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the past decade, we have witnessed a number of spectacular advances in the fabrication of crystalline semiconductor devices due mainly to the pro gress of the different techni ques of heteroepitaxy. The di scovery of two dimensional behavior of electrons led to the development of a new breed of ultrafast electronic and optical devices, such as modulation doped FETs, permeable base transistors, and double heterojunction transistors. Comparable progress has been made in the domain of cryoelectronics, ultrashort pulse generation, and ultrafast diagnostics. Dye lasers can generate 8 fs signals after compression, diode lasers can be modulated at speeds close to 20 GHz and electrical signals are characterized with subpicosecond accuracy via the electro-optic effect. Presently, we are experiencing an important interplay between the field of optics and electronics; the purpose of this meeting was to foster and enhance the interaction between the two disciplines. It was logical to start the conference by presenting to the two different audiences, i. e. , electronics and optics, the state-of-the-art in the two res pective fields and to highlight the importance of optical techniques in the analysis of physical processes and device performances. One of the leading techniques in this area is the electro-optic sampling technique. This optical technique has been used to characterize transmission lines and GaAs devices. Carrier transport in semiconductors is of fundamental importance and some of its important aspects are stressed in these proceedings.
Book Synopsis Optical Technology for Signal Processing Systems by : Mark P. Bendett
Download or read book Optical Technology for Signal Processing Systems written by Mark P. Bendett and published by . This book was released on 1991 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Picosecond Optoelectronic Sampling of Electrical Waveforms Produced by an Optically Excited Field Effect Transistor by : Steven C. Moss
Download or read book Picosecond Optoelectronic Sampling of Electrical Waveforms Produced by an Optically Excited Field Effect Transistor written by Steven C. Moss and published by . This book was released on 1987 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: Picosecond optoelectronic techniques were used to measure the electrical response of a submicron gate GaAs FET to optical excitation by picosecond laser pulses. Results indicated that carrier transport in these devices is strongly affected by screening of the applied electrical bias at high optical excitation levels. The use of these devices as ultrafast photodetectors and as generators of ultrafast transient electrical waveforms on GaAs integrated circuits was discussed.
