Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Download Transmission Electron Microscopy Of Semiconductor Nanostructures full books in PDF, epub, and Kindle. Read online Transmission Electron Microscopy Of Semiconductor Nanostructures ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author : Andreas Rosenauer
Publisher :
ISBN 13 : 9783662146170
Total Pages : 256 pages
Book Rating : 4.1/5 (461 download)
Download or read book Transmission Electron Microscopy of Semiconductor Nanostructures written by Andreas Rosenauer and published by . This book was released on 2014-01-15 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Andreas Rosenauer
Publisher : Springer
ISBN 13 : 3540364072
Total Pages : 238 pages
Book Rating : 4.5/5 (43 download)
Download or read book Transmission Electron Microscopy of Semiconductor Nanostructures written by Andreas Rosenauer and published by Springer. This book was released on 2003-07-03 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides tools well suited for the quantitative investigation of semiconductor electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductor nanostructures with a spatial resolution at near atomic scales. The book focuses on new methods including strain state analysis as well as evaluation of the composition via the lattice fringe analysis (CELFA) technique. The basics of these procedures as well as their advantages, drawbacks and sources of error are all discussed. The techniques are applied to quantum wells and dots in order to give insight into kinetic growth effects such as segregation and migration. In the first part of the book the fundamentals of transmission electron microscopy are provided. These are needed for an understanding of the digital image analysis techniques described in the second part of the book. There the reader will find information on different methods of composition determination. The third part of the book focuses on applications such as composition determination in InGaAs Stranski--Krastanov quantum dots. Finally it is shown how an improvement in the precision of the composition evaluation can be obtained by combining CELFA with electron holography. This is demonstrated for an AlAs/GaAs superlattice.
Author : Teya Topuria
Publisher :
ISBN 13 :
Total Pages : 312 pages
Book Rating : 4.:/5 (519 download)
Download or read book Analyzing Semiconductor Nanostructures by Scanning Transmission Electron Microscopy written by Teya Topuria and published by . This book was released on 2002 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Richard Haight
Publisher : World Scientific
ISBN 13 : 9814322849
Total Pages : 346 pages
Book Rating : 4.8/5 (143 download)
Download or read book Handbook of Instrumentation and Techniques for Semiconductor Nanostructure Characterization written by Richard Haight and published by World Scientific. This book was released on 2012 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt: As we delve more deeply into the physics and chemistry of functional materials and processes, we are inexorably driven to the nanoscale. And nowhere is the development of instrumentation and associated techniques more important to scientific progress than in the area of nanoscience. The dramatic expansion of efforts to peer into nanoscale materials and processes has made it critical to capture and summarize the cutting-edge instrumentation and techniques that have become indispensable for scientific investigation in this arena. This Handbook is a key resource developed for scientists, engineers and advanced graduate students in which eminent scientists present the forefront of instrumentation and techniques for the study of structural, optical and electronic properties of semiconductor nanostructures.
Author : Laura Lazzarini
Publisher : Elsevier Inc. Chapters
ISBN 13 : 0128083433
Total Pages : 78 pages
Book Rating : 4.1/5 (28 download)
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Laura Lazzarini and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Chun Maw Tey
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (277 download)
Download or read book Advanced Transmission Electron Microscopy Studies of III-V Semiconductor Nanostructures written by Chun Maw Tey and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Andreas Rosenauer
Publisher : Springer Science & Business Media
ISBN 13 : 3540004149
Total Pages : 238 pages
Book Rating : 4.5/5 (4 download)
Download or read book Transmission Electron Microscopy of Semiconductor Nanostructures written by Andreas Rosenauer and published by Springer Science & Business Media. This book was released on 2003-02-13 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides tools well suited for the quantitative investigation of semiconductor electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductor nanostructures with a spatial resolution at near atomic scales. The book focuses on new methods including strain state analysis as well as evaluation of the composition via the lattice fringe analysis (CELFA) technique. The basics of these procedures as well as their advantages, drawbacks and sources of error are all discussed. The techniques are applied to quantum wells and dots in order to give insight into kinetic growth effects such as segregation and migration. In the first part of the book the fundamentals of transmission electron microscopy are provided. These are needed for an understanding of the digital image analysis techniques described in the second part of the book. There the reader will find information on different methods of composition determination. The third part of the book focuses on applications such as composition determination in InGaAs Stranski--Krastanov quantum dots. Finally it is shown how an improvement in the precision of the composition evaluation can be obtained by combining CELFA with electron holography. This is demonstrated for an AlAs/GaAs superlattice.
Author : Maxim Korytov
Publisher :
ISBN 13 :
Total Pages : 180 pages
Book Rating : 4.:/5 (758 download)
Download or read book Quantitative Transmission Electron Microscopy Study of III-Nitride Semiconductor Nanostructures written by Maxim Korytov and published by . This book was released on 2010 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theoretical part of this thesis is dedicated to the adaptation of high-resolution transmission electron microscopy (HRTEM) for the study of GaN-based materials. First, the principle of heterostructure composition evaluation by means of the relative atomic displacement measurement is stated. The comparison of two strain measurement techniques, geometric phase analysis and projection method, is then presented. Finally, the effects of acquisition conditions on strain measurements were studied. The experimental part of this thesis is dedicated to the characterization of GaN quantum dots (QDs) realized on Al0.5Ga0.5N templates. This study revealed several phenomena original for nitride semiconductors. The surface QD shape changes from perfect pyramidal to truncated pyramidal with the increase of the nominal thickness of the deposited GaN layer. The capping of QDs having a perfect pyramidal shape leads to a QD shape truncation and a QD volume increase. Moreover, a phase separation was found in the AlGaN barriers with Al-rich zones formed above the QDs and Ga-rich regions placed around the Al-rich zones. The Al concentration into the Al-rich zones is about 70% and it decreases as the distance from the QD increases. To explain the observed phenomena, various models founded on the principle of total energy minimization have been developed. Several approaches, based on the results of this study and aimed for the improvement of the optoelectronic devices properties, are proposed.
Author : 李仁宏
Publisher :
ISBN 13 :
Total Pages : 117 pages
Book Rating : 4.:/5 (658 download)
Download or read book Investigation of Nitride Semiconductor Nanostructures with Transmission Electron Microscopy written by 李仁宏 and published by . This book was released on 2009 with total page 117 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jian Min Zuo
Publisher : Springer
ISBN 13 : 1493966073
Total Pages : 741 pages
Book Rating : 4.4/5 (939 download)
Download or read book Advanced Transmission Electron Microscopy written by Jian Min Zuo and published by Springer. This book was released on 2016-10-26 with total page 741 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume expands and updates the coverage in the authors' popular 1992 book, Electron Microdiffraction. As the title implies, the focus of the book has changed from electron microdiffraction and convergent beam electron diffraction to all forms of advanced transmission electron microscopy. Special attention is given to electron diffraction and imaging, including high-resolution TEM and STEM imaging, and the application of these methods to crystals, their defects, and nanostructures. The authoritative text summarizes and develops most of the useful knowledge which has been gained over the years from the study of the multiple electron scattering problem, the recent development of aberration correctors and their applications to materials structure characterization, as well as the authors' extensive teaching experience in these areas. Advanced Transmission Electron Microscopy: Imaging and Diffraction in Nanoscience is ideal for use as an advanced undergraduate or graduate level text in support of course materials in Materials Science, Physics or Chemistry departments.
Author : Challa S.S.R. Kumar
Publisher : Springer Science & Business Media
ISBN 13 : 3642389341
Total Pages : 718 pages
Book Rating : 4.6/5 (423 download)
Download or read book Transmission Electron Microscopy Characterization of Nanomaterials written by Challa S.S.R. Kumar and published by Springer Science & Business Media. This book was released on 2013-12-09 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: Third volume of a 40volume series on nanoscience and nanotechnology, edited by the renowned scientist Challa S.S.R. Kumar. This handbook gives a comprehensive overview about Transmission electron microscopy characterization of nanomaterials. Modern applications and state-of-the-art techniques are covered and make this volume an essential reading for research scientists in academia and industry.
Author : Litao Sun
Publisher : Springer Nature
ISBN 13 : 9811968454
Total Pages : 378 pages
Book Rating : 4.8/5 (119 download)
Download or read book In-Situ Transmission Electron Microscopy written by Litao Sun and published by Springer Nature. This book was released on 2023-03-11 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on in-situ transmission electron microscopy (TEM), an investigatory technique used to observe a sample’s response to a given stimulus (including electron irradiation, thermal excitation, mechanical force, optical excitation, electric and magnetic fields) at the nanoscale in real time. The book introduces readers to the technical strategy behind the in-situ technique and its developments. It reviews the research frontiers of using in-situ TEM in energy conversion and storage, catalysis, nanomaterials synthesis, nanoelectronics, etc. Furthermore, it discusses the future prospects for in-situ TEM. The book offers a valuable guide for all undergraduate and graduate students who are interested in TEM characterization technology. It also serves as a reference source on cutting-edge in-situ techniques for researchers and engineers.
Author : Giovanni Agostini
Publisher : Elsevier
ISBN 13 : 0080558151
Total Pages : 501 pages
Book Rating : 4.0/5 (85 download)
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Elsevier. This book was released on 2011-08-11 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Author : Francis Leonard Deepak
Publisher : Springer
ISBN 13 : 3319151770
Total Pages : 281 pages
Book Rating : 4.3/5 (191 download)
Download or read book Advanced Transmission Electron Microscopy written by Francis Leonard Deepak and published by Springer. This book was released on 2015-06-05 with total page 281 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book highlights the current understanding of materials in the context of new and continuously emerging techniques in the field of electron microscopy. The authors present applications of electron microscopic techniques in characterizing various well-known & new nanomaterials. The applications described include both inorganic nanomaterials as well as organic nanomaterials.
Author : Y. Qiu
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (858 download)
Download or read book Study of InAs and InP Semiconductor Quantum Dot Nanostructures by Transmission Electron Microscopy written by Y. Qiu and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: III- V semiconductor materials are the foundation of many modern electronic and optical devices. In particular, Ill-V semiconductor quantum dots (QDs) are successfully utilized in many applications especially where high optical output (laser diodes) is required. With the aim to improve the performance further, the nanostructure and the growth mechanisms of layer and dot structures used for transistors or laser diodes have to be explored. In this work, a JEOL JEM-2010F field-emission gun transmission electron microscope is applied to investigate the crystallography and chemical composition of InAs or InP QDs at near atomic level using conventional transmission election microscopy (TEM), high resolution TEM, scanning transmission electron microscopy (STEM) and energy-dispersive X-ray spectroscopy (EDXS). The bulk of the thesis concerns the study of InAs/GaAs QD samples, which were grown by molecular beam epitaxy (MBE). An analysis of InAs/GaAs QDs deposited on top of InGaAs or GaAsSb buffer layers is presented. It was found that the GaAsSb buffer, compared to the conventional InGaAs buffer, relaxes more of the strain by introducing misfit dislocations at its lower interface and provides a smoother surface for the subsequent growth. Therefore, the QDs above GaAsSb were fully strained without any dislocations, whereas the strain was partially relaxed by dislocations in the QDs above the InGaAs buffer. The effects of thermal annealing on InAs/GaAs QDs covered with an InGaAs strain-reducing layer were also studied. The influence of the annealing temperature on the degree of interdiffusion between In and Ga atoms was analysed by investigating the change in the size of the QDs. A new technique was used to deduce the indium concentration from series of annular dark-field (ADF) STEM measurements at different collection angles. During annealing, the QDs mainly become flatter and wider. Carbon doping of part of the GaAs barriers has been experimentally found to stabilise both the intensity and the energy of optical emission from those InAs/GaAs QDs upon annealing. ADF Z-contrast STEM imaging suggests the out-diffusion of indium from the QDs is compensated by lateral segregation of indium from the InGaAs layers, which is stronger in the C- doped sample compared to the undoped. An InP QD sample grown by metalorganic vapour phase epitaxy (MOVPE) was successfully utilized to generate 200 femtosecond pulses at ~800 nm wavelength with 2 GHz repetition rates. This sample has been investigated and compared with three other InP QD samples grown with different growth temperatures (640 QC or 720°C), growth rates (0.38 or 0.76 nmlsec) or growth interrupts (0, 10 or 20 sec) using STEM and EDXS. The results propose that InP QDs can be formed by MOVPE at relatively low growth temperatures of - 640 QC and QD formation is favoured by slow growth with growth interrupts.
Author : Alexander V. Latyshev
Publisher : Elsevier
ISBN 13 : 0128105135
Total Pages : 553 pages
Book Rating : 4.1/5 (281 download)
Download or read book Advances in Semiconductor Nanostructures written by Alexander V. Latyshev and published by Elsevier. This book was released on 2016-11-10 with total page 553 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures Covers recent developments in the field from all over the world Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries
Author : Nobuo Tanaka
Publisher : World Scientific
ISBN 13 : 1783264713
Total Pages : 616 pages
Book Rating : 4.7/5 (832 download)
Download or read book Scanning Transmission Electron Microscopy Of Nanomaterials: Basics Of Imaging And Analysis written by Nobuo Tanaka and published by World Scientific. This book was released on 2014-08-21 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: The basics, present status and future prospects of high-resolution scanning transmission electron microscopy (STEM) are described in the form of a textbook for advanced undergraduates and graduate students. This volume covers recent achievements in the field of STEM obtained with advanced technologies such as spherical aberration correction, monochromator, high-sensitivity electron energy loss spectroscopy and the software of image mapping. The future prospects chapter also deals with z-slice imaging and confocal STEM for 3D analysis of nanostructured materials.
