To Study the ECR Plasma Assisted Growth of III-V Nitride (such as GaN) and Nanostructures

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Publisher : University of Pune, PhD Dissertation
ISBN 13 :
Total Pages : 204 pages
Book Rating : 4./5 ( download)

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Book Synopsis To Study the ECR Plasma Assisted Growth of III-V Nitride (such as GaN) and Nanostructures by : Viswas Purohit

Download or read book To Study the ECR Plasma Assisted Growth of III-V Nitride (such as GaN) and Nanostructures written by Viswas Purohit and published by University of Pune, PhD Dissertation. This book was released on with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt: RESEARCH THESIS by Viswas Purohit PhD, Plasma Physics University of Pune, MAH, India “To study the ECR assisted Growth of III-V nitride (such as GaN) and nanostructures”. • The aim of the work carried out was to design and develop a permanent magnet based Electron Cyclotron Resonance (ECR) plasma system as well as to study the plasma assisted material synthesis and modifications with the ECR plasma. Overall the aims were, a) Development of an ECR plasma system b) Carrying out plasma diagnostics using Langmuir double probe and Retarding field analyzer. c) Use of hollow cathode discharge for synthesizing metallic nanomaterials, which spawned two more projects in our department. d) Depositing GaN by MOCVD within an ECR plasma reactor.

III-Nitride, SiC, and Diamond Materials for Electronic Devices: Volume 423

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Publisher :
ISBN 13 :
Total Pages : 824 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis III-Nitride, SiC, and Diamond Materials for Electronic Devices: Volume 423 by : D. Kurt Gaskill

Download or read book III-Nitride, SiC, and Diamond Materials for Electronic Devices: Volume 423 written by D. Kurt Gaskill and published by . This book was released on 1996-11-15 with total page 824 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book differs from previous volumes on wide bandgap semiconductors in that the emphasis is specifically on materials aspects related to electronic properties and devices. Solid advances are reported in the growth techniques of all three materials groups. In particular, the critical importance of surfaces, interfaces, doping, defects and impurities is demonstrated. Potential device applications ranging from new high-frequency, high-power all-solid-state devices to unique cold-cathode electronic devices are presented. Whilst the results demonstrate real promise for a wide range of new solid-state devices that are not feasible with current production materials, it is also evident that substantial progress in materials research is needed to fulfill the real potential of these applications. Critical issues related to the electronic potential of all three materials are addressed. Topics include: device technologies - devices, metallizations, etching, and implantation; bulk and bulk-like crystal growth; film growth; defects and structural properties; doping and electrical properties and optical and field-emission properties.

Chemical Abstracts

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Publisher :
ISBN 13 :
Total Pages : 2540 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Chemical Abstracts by :

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Blue Laser and Light Emitting Diodes

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Publisher : IOS Press
ISBN 13 :
Total Pages : 608 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Blue Laser and Light Emitting Diodes by : Akihiko Yoshikawa

Download or read book Blue Laser and Light Emitting Diodes written by Akihiko Yoshikawa and published by IOS Press. This book was released on 1996 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: Realization of the semiconductor laser diodes (LDs) operating in the blue wavelength region had been a 'dream' for a long time for the scientists working on widegap materials until just a few years ago. Quite remarkable progress has been made in the last few years the dream has come true. The first ZnSe-based blue/green LD was fabricated about four years ago and its officially reported life-time in CW operation exceeds 100 hours now; it is quickly approaching a practical use level. Further, GaN-based blue LDs have also been realized. In this way, the progress in these research fields is quite rapid. The work includes articles on bulk growth, epitaxy, doping and characterization, blue LDs and LEDs, and future prospects in both ZnSe-based and GaN-based areas.

Electrical & Electronics Abstracts

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Publisher :
ISBN 13 :
Total Pages : 1860 pages
Book Rating : 4.3/5 (243 download)

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Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1860 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Physica E.

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Publisher :
ISBN 13 :
Total Pages : 1128 pages
Book Rating : 4.:/5 (44 download)

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Book Synopsis Physica E. by :

Download or read book Physica E. written by and published by . This book was released on 2000 with total page 1128 pages. Available in PDF, EPUB and Kindle. Book excerpt:

International Aerospace Abstracts

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Publisher :
ISBN 13 :
Total Pages : 974 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis International Aerospace Abstracts by :

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 974 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Science Abstracts

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Publisher :
ISBN 13 :
Total Pages : 1360 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis Science Abstracts by :

Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1360 pages. Available in PDF, EPUB and Kindle. Book excerpt:

GaN and Related Materials

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Publisher : CRC Press
ISBN 13 : 1000448428
Total Pages : 556 pages
Book Rating : 4.0/5 (4 download)

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Book Synopsis GaN and Related Materials by : Stephen J. Pearton

Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 2021-10-08 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.

Power GaN Devices

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Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 380 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Atomic Layer Deposition for Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 146148054X
Total Pages : 266 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Atomic Layer Deposition for Semiconductors by : Cheol Seong Hwang

Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

The Journal of the Korean Physical Society

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Publisher :
ISBN 13 :
Total Pages : 816 pages
Book Rating : 4.6/5 (241 download)

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Book Synopsis The Journal of the Korean Physical Society by :

Download or read book The Journal of the Korean Physical Society written by and published by . This book was released on 2003 with total page 816 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Triboelectric Nanogenerators

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Publisher : Springer
ISBN 13 : 3319400398
Total Pages : 517 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Triboelectric Nanogenerators by : Zhong Lin Wang

Download or read book Triboelectric Nanogenerators written by Zhong Lin Wang and published by Springer. This book was released on 2016-08-17 with total page 517 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces an innovative and high-efficiency technology for mechanical energy harvesting. The book covers the history and development of triboelectric nanogenerators, basic structures, working principles, performance characterization, and potential applications. It is divided into three parts: Part A illustrates the fundamental working modes of triboelectric nanogenerators with their prototype structures and theoretical analysis; Part B and Part C introduce two categories of applications, namely self-powered systems and self-powered active sensors. The book will be an ideal guide to scientists and engineers beginning to study triboelectric nanogenerators or wishing to deepen their knowledge of the field. Readers will be able to place the technical details about this technology in context, and acquire the necessary skills to reproduce the experimental setups for fabrication and measurement.

Optoelectronic Devices

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Publisher : Elsevier
ISBN 13 : 9780080444260
Total Pages : 602 pages
Book Rating : 4.4/5 (442 download)

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Book Synopsis Optoelectronic Devices by : M Razeghi

Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Magnetic Nanostructures

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Publisher :
ISBN 13 : 9781588830005
Total Pages : 0 pages
Book Rating : 4.8/5 (3 download)

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Book Synopsis Magnetic Nanostructures by : Hari Singh Nalwa

Download or read book Magnetic Nanostructures written by Hari Singh Nalwa and published by . This book was released on 2002 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Twelve contributions comprise a reference source that is a coherent presentation of the state of the art in this fast growing area of nanotechnology research. Magnetic nanostructures are important for their phenomenal potential for storage; their great commercial value will come from applications in

[Publications]

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Publisher : Sagwan Press
ISBN 13 : 9781377053714
Total Pages : 394 pages
Book Rating : 4.0/5 (537 download)

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Book Synopsis [Publications] by : Sussex Record Society Cn

Download or read book [Publications] written by Sussex Record Society Cn and published by Sagwan Press. This book was released on 2018-02-08 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work. This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work. As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.

Nanostructure Science and Technology

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Publisher : Springer Science & Business Media
ISBN 13 : 9401591857
Total Pages : 354 pages
Book Rating : 4.4/5 (15 download)

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Book Synopsis Nanostructure Science and Technology by : Richard W. Siegel

Download or read book Nanostructure Science and Technology written by Richard W. Siegel and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: Timely information on scientific and engineering developments occurring in laboratories around the world provides critical input to maintaining the economic and technological strength of the United States. Moreover, sharing this information quickly with other countries can greatly enhance the productivity of scientists and engineers. These are some of the reasons why the National Science Foundation (NSF) has been involved in funding science and technology assessments comparing the United States and foreign countries since the early 1980s. A substantial number of these studies have been conducted by the World Technology Evaluation Center (WTEC) managed by Loyola College through a cooperative agreement with NSF. The National Science and Technology Council (NSTC), Committee on Technology's Interagency Working Group on NanoScience, Engineering and Technology (CT/IWGN) worked with WTEC to develop the scope of this Nanostucture Science and Technology report in an effort to develop a baseline of understanding for how to strategically make Federal nanoscale R&D investments in the coming years. The purpose of the NSTC/WTEC activity is to assess R&D efforts in other countries in specific areas of technology, to compare these efforts and their results to U. S. research in the same areas, and to identify opportunities for international collaboration in precompetitive research. Many U. S. organizations support substantial data gathering and analysis efforts focusing on nations such as Japan. But often the results of these studies are not widely available. At the same time, government and privately sponsored studies that are in the public domain tend to be "input" studies.