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Time Resolved Cathodoluminescence Of Cadmium Implanted Gallium Arsenide
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Book Synopsis Time-resolved Cathodoluminescence of Cadmium Implanted Gallium Arsenide by : George V. Boyd (CAPT, USAF., III)
Download or read book Time-resolved Cathodoluminescence of Cadmium Implanted Gallium Arsenide written by George V. Boyd (CAPT, USAF., III) and published by . This book was released on 1976 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Depth Resolved Cathodoluminescence of Cadmium Implanted Gallium Arsenide by : Dan L Boulet (Jr)
Download or read book Depth Resolved Cathodoluminescence of Cadmium Implanted Gallium Arsenide written by Dan L Boulet (Jr) and published by . This book was released on 1975 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: Three samples of GaAs were examined by depth resolved cathodoluminescence using electron beam energies from 5 KV to 25 KV at 10K and 80K. Samples 1 and 2 had been Cd implanted at 135 KV and annealed at 800C for 10 minutes; they received doses of 10 to the 15th power ion/sq cm and 10 to the 14th power ion/sq cm respectively. Sample 3 was n-type epitaxial and had not been intentionally doped. In the Cd implanted samples, the peak normally located near 1.488 eV at 10K (1.481 eV at 80K) was observed to shift to lower energy as the beam energy was reduced. This shift was interpreted as being caused by a depth dependent Cd concentration which was higher near the surface. Peak shifts as were observed in Samples 1 and 2 did not occur in the depth resolved spectra of Sample 3. From this study, it was concluded that using depth resolved cathodoluminescence spectra, energy shifts of peaks resulting from simple center recombinations can, under certain conditions, be used to estimate the extent of an implanted impurity concentration.
Book Synopsis Depth-resolved Cathodoluminescence on the Effects of Cd Implantation and Annealing in Gallium Arsenide by : Joseph Danny Dumoulin (MAJ, USAF.)
Download or read book Depth-resolved Cathodoluminescence on the Effects of Cd Implantation and Annealing in Gallium Arsenide written by Joseph Danny Dumoulin (MAJ, USAF.) and published by . This book was released on 1976 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Depth-Resolved Cathodoluminescence on the Effects of Cd Implantation and Annealing in Gallium Arsenide by : Joseph D. Dumoulin
Download or read book Depth-Resolved Cathodoluminescence on the Effects of Cd Implantation and Annealing in Gallium Arsenide written by Joseph D. Dumoulin and published by . This book was released on 1976 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ten samples of GaAs were examined by depth-resolved cathodoluminescence at temperatures of 10 K and 80 K. Electron beam energies from 1.0KV to 25KV were used. Both cold and hot, 135KV, Cd-implanted GaAs samples with Si3N4 caps were studied. A sample of the n-type GaAs substrate was used as a control. Spectra were obtaining showing the ion implantation damage layers. The unannealed samples damage layer boundaries were calculated at 0.01 micrometers, 0.24 micrometers, 0.37 micrometers, and 0.61 micrometers for fluences of 10 to the 12th power ion/sq cm, 10 to the 14th power ion/sqcm, 10 to the 15th power ion/sqcm, and 10 to the 16th power ion/sqcm respectively. For fluences> or = 10 to the 14th power ion/sq cm and 800 C, 15 minute anneal in flowing argon gas was not sufficient to completely remove the damage layer. An emission peak at 1.488eV changed in energy by only 0.001 eV between 10 K and 80 K, and was assigned to a donor-Cd acceptor recombination. A peak approximately 0.010eV above the band gap energy was observed in many of the implanted samples. Peaks at 1.4eV, 1.41eV, 1.39eV, and 1.35eV increased in intensity upon annealing and were assigned to vacancies, which were enhanced during annealing. The major conclusion reached was that depth-resolved cathodoluminescence was an excellent non-destructive method of sharply defining damage layers produced by ion implantation. (Author).
Book Synopsis Depth-resolved Cathodoluminescence of Carbon Implanted Gallium Arsenide by : Luciano V. Parzianello (CAPT, USAF.)
Download or read book Depth-resolved Cathodoluminescence of Carbon Implanted Gallium Arsenide written by Luciano V. Parzianello (CAPT, USAF.) and published by . This book was released on 1978 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Depth-resolved Cathodoluminescence of Carbon Implanted Gallium Arsenide by : Martin J. Walter (2LT, USAF.)
Download or read book Depth-resolved Cathodoluminescence of Carbon Implanted Gallium Arsenide written by Martin J. Walter (2LT, USAF.) and published by . This book was released on 1977 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Depth-resolved Cathodoluminescence Study of Annealed Silicon Implanted Gallium Arsenide by : Jeffrey Ray Cavins (CAPT, USAF.)
Download or read book Depth-resolved Cathodoluminescence Study of Annealed Silicon Implanted Gallium Arsenide written by Jeffrey Ray Cavins (CAPT, USAF.) and published by . This book was released on 1982 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Depth-Resolved Cathodoluminescence Study of Annealed Silicon Implanted Gallium Arsenide by : Jeffrey Ray Cavins
Download or read book Depth-Resolved Cathodoluminescence Study of Annealed Silicon Implanted Gallium Arsenide written by Jeffrey Ray Cavins and published by . This book was released on 1982 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: Depth-resolved cathodoluminescence was performed on Si ion implanted GaAs. The samples were Cr doped semi-insulating GaAs crystals grown using the horizontal Bridgman method. Nine samples were prepared for this study, four were implanted with 100 keV Si ions at a fluence of 10 to the 13th power/sq. cm, and five were left unimplanted. One each of the implanted and unimplanted samples were annealed at 800 C for 10 minutes, 800 C for 10 seconds, 900 C for 10 minutes, or 900 C for 10 seconds, for a total of eight samples. The ninth sample was left unannealed and unimplanted as a control. Cathodoluminescence data was taken using 1000 V electrons as an excitation source. Depth resolution was achieved by taking spectral data and successively chemically etching the surface of the crystal in 250 A steps. No new peaks were observed in the GaAs during the experiment. The 800 C/10 minute anneal proved to have the greatest effect in optically activating the impurities in the unimplanted samples. The 900 C/10 minute anneals exhibited spectra associated with vacancy complexes.
Book Synopsis Masters Theses in the Pure and Applied Sciences by : Wade H. Shafer
Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and dis seminated by the Center for lnformation and Numerica/ Data Analysis and Synthesis (C/NDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the ac tivity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficia! to the academic and general scientific and technical community. After fi ve years of this joint undertaking we had concluded that it was in the interest of ali concerned if the printing and distribution of the volume were handled by an international publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and App/ied Sciences has been disseminated on a worldwide basis by Plenum Publishing Corporation of New York, and in the same year the coverage was broadened to include Canadian universities. Ali back issues can also be ordered from Plenum. We have reported in Volume 21 (thesis year 1976) a total of 10,586 theses titles from 25 Canadian and 219 United States universities. We are sure that this broader base for theses titles reported will greatly enhance the value of this important annual reference work.
Book Synopsis Depth-Resolved Cathodoluminescence of Carbon Implanted Gallium Arsenide by : Luciano V. Parzianello
Download or read book Depth-Resolved Cathodoluminescence of Carbon Implanted Gallium Arsenide written by Luciano V. Parzianello and published by . This book was released on 1977 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effects of two caps, SiO2 and Si3N, are examined on Cr doped GaAs by means of depth resolved Cathodoluminescence. The GaAs samples had been implanted with C in fluences of 10 to the -13th power/sq cm and 10 to the -14th power/sq cm. Two of the samples differed only in the cap used. The energy shift in the carbon-carbon, donor-acceptor, recombination, and the free-bound, carbon acceptor transition peak are used to evaluate the carbon donor, and carbon acceptor concentrations. These concentrations are used to evaluate the effects of the caps. It is found that the carbon substitutes for both Ga and As; and that the Si3N4 cap permits greater outdiffusion of As than the SiO2 cap; and that the SiO2 cap permits greater outdiffusion of the Ga than does the Si3N4 cap. (Author).
Book Synopsis Cathodoluminescence and Photoluminescence Study of Silicon Implanted Gallium Arsenide by : Daniel L. DeForest
Download or read book Cathodoluminescence and Photoluminescence Study of Silicon Implanted Gallium Arsenide written by Daniel L. DeForest and published by . This book was released on 1982 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: Depth resolved photoluminescence and cathodoluminescence data were obtained from gallium arsenide implanted with 120 keV silicon ions. The luminescence data were studied as a function of depth in an effort to determine the implant damage profile of the silicon in GaAs. A chemical etchant was used to etch off successive layers of the crystal surface. The substrate material used for this study was bulk GaAs, grown by the Liquid-Encapsulated Czochralski (LEC) method. (Author).
Book Synopsis Cathodoluminescence and Photoluminescence Study of Silicon Implanted Gallium Arsenide by : Daniel Lee DeForest (2LT, USAF.)
Download or read book Cathodoluminescence and Photoluminescence Study of Silicon Implanted Gallium Arsenide written by Daniel Lee DeForest (2LT, USAF.) and published by . This book was released on 1982 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 994 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis ERDA Energy Research Abstracts by : United States. Energy Research and Development Administration
Download or read book ERDA Energy Research Abstracts written by United States. Energy Research and Development Administration and published by . This book was released on 1976 with total page 794 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Cathodoluminescence of Germanium Implanted Gallium Arsenide and the Effects of Laser Annealing by : James H. Walcher (CAPT, USAF.)
Download or read book Cathodoluminescence of Germanium Implanted Gallium Arsenide and the Effects of Laser Annealing written by James H. Walcher (CAPT, USAF.) and published by . This book was released on 1978 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Cathodoluminescence on the Effects of Te Implantation and Laser Annealing in Gallium Arsenide by : Ronald L. Lusk
Download or read book Cathodoluminescence on the Effects of Te Implantation and Laser Annealing in Gallium Arsenide written by Ronald L. Lusk and published by . This book was released on 1978 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt: The United States Air Force uses devices which must operate in high temperature environments where intrinsic (pure) semiconductors do not perform well. With the intentional addition of impurity ions (doping) into the lattice of a crystal, the semiconductor gallium arsenide (GaAs) should have the electrical properties required for operation in the environments mentioned above. Gallium arsenide is an intermetallic compound formed from a group III element (gallium) and a group V element (arsenic). It crystallizes in the zinc blende structure and has physical properties which are similar to those of the covalent group IV semiconductors, germanium and silicon. The electrical properties, such as high electron mobility, have made GaAs very useful in many technical applications. However, the promise that GaAs shows for use in future devices, such as microwave devices, is based upon the ability to provide the necessary impurity concentrations in the 'pure' crystal.
Book Synopsis Time Resolved Luminescence Measurements of Gallium Arsenide and of Gallium Arsenide Photodetectors by : Ann Christine Von Lehmen
Download or read book Time Resolved Luminescence Measurements of Gallium Arsenide and of Gallium Arsenide Photodetectors written by Ann Christine Von Lehmen and published by . This book was released on 1985 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt:
