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Third International Conference Indium Phosphide And Related Materials
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Book Synopsis Third International Conference, Indium Phosphide and Related Materials by : Trevar Riley
Download or read book Third International Conference, Indium Phosphide and Related Materials written by Trevar Riley and published by . This book was released on 1991 with total page 710 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis International Conference on Indium Phosphide and Related Materials by :
Download or read book International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on 2000 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Eighth International Conference on Indium Phosphide and Related Materials by :
Download or read book Eighth International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on 1996 with total page 812 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the XIII Space Photovoltaic Research and Technology Conference (SPRAT XIII) by :
Download or read book Proceedings of the XIII Space Photovoltaic Research and Technology Conference (SPRAT XIII) written by and published by . This book was released on 1994 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physical Chemistry of Semiconductor Materials and Processes by :
Download or read book Physical Chemistry of Semiconductor Materials and Processes written by and published by John Wiley & Sons. This book was released on 2015-08-17 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.
Book Synopsis MEMS Materials and Processes Handbook by : Reza Ghodssi
Download or read book MEMS Materials and Processes Handbook written by Reza Ghodssi and published by Springer Science & Business Media. This book was released on 2011-03-18 with total page 1211 pages. Available in PDF, EPUB and Kindle. Book excerpt: MEMs Materials and Processes Handbook" is a comprehensive reference for researchers searching for new materials, properties of known materials, or specific processes available for MEMS fabrication. The content is separated into distinct sections on "Materials" and "Processes". The extensive Material Selection Guide" and a "Material Database" guides the reader through the selection of appropriate materials for the required task at hand. The "Processes" section of the book is organized as a catalog of various microfabrication processes, each with a brief introduction to the technology, as well as examples of common uses in MEMs.
Book Synopsis Perspectives in Optoelectronics by : Sudhanshu Shekhar Jha
Download or read book Perspectives in Optoelectronics written by Sudhanshu Shekhar Jha and published by World Scientific. This book was released on 1995 with total page 962 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronics is a rapidly expanding field of research and development. In years to come, it is destined to play a primary role in the growing information industry. The basic philosophy behind the science and technology of optoelectronics is to create and develop photonic devices in which optical photons (light waves) instead of electronic carriers, are manipulated for the conventional task performed by microelectronics. Thanks to the availability of large bandwidth at optical frequencies, the development of cost-effective low-loss low-dispersion silica fibers for optical transmission, and the possibility of ultra-fast two-dimensional processing, the field of present-day microelectronics is moving steadily towards this new technology of optoelectronics and photonics.This volume presents reviews of different areas of optoelectronics written by international experts in the field, covering most of the topics of recent importance. It includes detailed discussions on semiconductor lasers and optical amplifiers; optical fiber transmission; photodetectors; optoelectronic and photonic integrated circuits; light-wave telecommunications; optical signal and image processing; optical computing; nonlinear and integrated optics; space-time Fourier optics; optical metrology and sensing and optical interconnects. All chapters are written in the style of a textbook containing tutorial sections which should be of great use to graduate students. The volume should serve as an excellent book for graduate level course on optoelectronics, modern optical engineering, and optical communications.
Book Synopsis III-V Microelectronics by : J.P. Nougier
Download or read book III-V Microelectronics written by J.P. Nougier and published by Elsevier. This book was released on 2014-05-27 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental physics to modelling and technology, from materials to devices and circuits are reviewed. Containing contributions from European researchers of international repute this volume is the definitive reference source for anyone interested in the latest advances and results of current experimental research in III-V microelectronics.
Book Synopsis III-V Compound Semiconductors by : Tingkai Li
Download or read book III-V Compound Semiconductors written by Tingkai Li and published by CRC Press. This book was released on 2016-04-19 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992 with total page 604 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings written by and published by . This book was released on 1991 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the 13th Space Photovoltaic Research and Technology Conference (SPRAT 13) by :
Download or read book Proceedings of the 13th Space Photovoltaic Research and Technology Conference (SPRAT 13) written by and published by . This book was released on 1994 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis High Mobility Materials for CMOS Applications by : Nadine Collaert
Download or read book High Mobility Materials for CMOS Applications written by Nadine Collaert and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt: High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology. - Addresses each of the challenges of utilizing high mobility materials for CMOS applications, presenting possible solutions and the latest innovations - Covers the latest advances in research on heterogeneous integration, gate stack, device design and scalability - Provides a broad overview of the topic, from materials integration to circuits
Book Synopsis Handbook for III-V High Electron Mobility Transistor Technologies by : D. Nirmal
Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Book Synopsis Fundamentals of III-V Semiconductor MOSFETs by : Serge Oktyabrsky
Download or read book Fundamentals of III-V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Book Synopsis Optical Access Networks and Advanced Photonics: Technologies and Deployment Strategies by : Chochliouros, Ioannis P.
Download or read book Optical Access Networks and Advanced Photonics: Technologies and Deployment Strategies written by Chochliouros, Ioannis P. and published by IGI Global. This book was released on 2009-07-31 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This book presents a comprehensive overview of emerging optical access network solutions to efficiently meet the anticipated growth in bandwidth demand"--Provided by publisher.
Book Synopsis Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth by : Hadis Morkoç
Download or read book Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 1311 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.