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Thin Film Transistors Fabricated Using Sputter Deposition Of Zno
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Book Synopsis Thin-film Transistors Fabricated Using Sputter Deposition of ZnO by : Nan Xiao
Download or read book Thin-film Transistors Fabricated Using Sputter Deposition of ZnO written by Nan Xiao and published by . This book was released on 2013 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Development of thin film transistors (TFTs) with conventional channel layer materials, such as amorphous silicon (a-Si) and polysilicon (poly-Si), has been extensively investigated. A-Si TFT currently serves the large flat panel industry; however advanced display products are demanding better TFT performance because of the associated low electron mobility of a-Si. This has motivated interest in semiconducting metal oxides, such as Zinc Oxide (ZnO), for TFT backplanes. This work involves the fabrication and characterization of TFTs using ZnO deposited by sputtering. An overview of the process details and results from recently fabricated TFTs following a full-factorial designed experiment will be presented. Material characterization and analysis of electrical results will be described. The investigated process variables were the gate dielectric and ZnO sputtering process parameters including power density and oxygen partial pressure. Electrical results showed clear differences in treatment combinations, with certain I-V characteristics demonstrating superior performance to preliminary work. A study of device stability will also be discussed."--Abstract.
Book Synopsis Optimization of the Fabrication Condition of RF Sputtered ZnO Thin Film Transistors with High-k HfO2 Gate Dielectric by : Prem Thapaliya
Download or read book Optimization of the Fabrication Condition of RF Sputtered ZnO Thin Film Transistors with High-k HfO2 Gate Dielectric written by Prem Thapaliya and published by . This book was released on 2016 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt: Conventional amorphous silicon based thin film transistors have been the most widely used ones for flat panel display application during the last two decades. However, the low mobility of less than 1 cm2/Vs and light induced instability of the amorphous silicon based thin film transistor make them unsuitable for high resolution displays. Oxide based thin film transistors have attracted a great deal of interest as an alternative to conventional amorphous silicon based thin film transistors for high resolution display applications. In particular, ZnO has gained considerable interest for the next generation transparent and flexible display due to its wide band gap of 3.37 eV, high electron mobility and low temperature deposition forming good quality of polycrystalline film even at room temperature. Consequently all the aforementioned features of ZnO make them promising channel material for the flexible and transparent TFTs. The electrical characteristics of ZnO based TFTs is greatly affected by the deposition condition and hence crystalline quality of channel layer, thickness of channel layer and quality of interface between the gate dielectric and the channel layer. Therefore, the deposition temperature and the thickness of the ZnO channel needs to be optimized in order to achieve high performance ZnO TFTs. Moreover, the quality of interface between the ZnO channel layer and the gate dielectric is of vital importance to improve the performance of the TFTs. In this dissertation, we have fabricated and characterized RF sputtered ZnO based thin film transistor using high-k HfO2 gate dielectric. The transparent ZnO TFTs was realized using FTO as a transparent gate electrode as opposed to commonly used ITO gate electrode. It was found that TFTs fabricated using the FTO gate electrode showed lower mobility and on/off ratio compared to the TFTs with Ru as a gate on the Si substrate. This deterioration of TFTs performance with the use of FTO gate electrode was attributed to the degradation of HfO2 gate dielectric due to the diffusion of fluorine from the FTO into the HfO2 during its deposition at 300 °C. In order to minimize the interface trap density at the interface between the ZnO and HfO2, an interfacial layer of MgO with different thickness was investigated. It was found that 10 nm MgO is an optimum thickness that can reduce the interface trap density by almost one order of magnitude and hence exhibit the best TFTs performance with field effect mobility, threshold voltage, on/off ratio and subthreshold swing to be 0.3 cm2/V.s, 3.7 V , 106 and 1.35 V/decade respectively. The decrease in the interface trap density with the interfacial layer was attributed to the reduction of defects in the ZnO by the excess oxygen ions of MgO. Furthermore, the ZnO channel layer was deposited at different temperature including room temperature, 50 °C, 100 °C and 200 °C, to determine the optimum deposition temperature that can achieve high performance ZnO TFTs. It was found that ZnO deposited at 50 °C showed the best TFT performance with field effect mobility, threshold voltage, on off ratio and subthreshold swing 1.12 cm2/V.s, 5.8 V, 1.4×105, 1.35 V/decade respectively. The improvement in the performance of the TFTs device with 50 °C ZnO was attributed to the low surface roughness of ZnO film, increased grain size and good polycrystalline quality which was confirmed with the help of XRD, AFM and SEM measurement of ZnO thin film deposited at different temperature. Likewise, once the optimum deposition temperature of ZnO was determined, the effect of ZnO thickness was investigated by depositing the ZnO with different thickness including 30 nm, 50 nm, 70 nm and 100 nm while maintaining the deposition temperature of ZnO to be at 50 °C. It was found that the TFTs device with 50 nm exhibit the superior performance over the other thicknesses of ZnO which was ascribed to the improved polycrystalline quality, low surface roughness of the 50 nm ZnO thin film.
Book Synopsis Stability, Electrical Characteristics and Flexibility of ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition by :
Download or read book Stability, Electrical Characteristics and Flexibility of ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition written by and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Investigation of Magnesium Zinc Oxide Thin Film Transistors Fabricated by Sputtered System and Their Optoelectronic Application by :
Download or read book Investigation of Magnesium Zinc Oxide Thin Film Transistors Fabricated by Sputtered System and Their Optoelectronic Application written by and published by . This book was released on 2015 with total page 107 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Investigation of Indium Zinc Oxide Thin Film Transistors Fabricated by Sputtered System and Their Optoelectronic Application by : 溫承樺
Download or read book Investigation of Indium Zinc Oxide Thin Film Transistors Fabricated by Sputtered System and Their Optoelectronic Application written by 溫承樺 and published by . This book was released on 2014 with total page 91 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Top Gate ZnO−Al2O3 Thin Film Transistors Fabricated Using a Chemical Bath Deposition Technique by :
Download or read book Top Gate ZnO−Al2O3 Thin Film Transistors Fabricated Using a Chemical Bath Deposition Technique written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics by : Fábio Fedrizzi Vidor
Download or read book ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics written by Fábio Fedrizzi Vidor and published by Springer. This book was released on 2017-12-28 with total page 191 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the integration, characterization and analysis of cost-efficient thin-film transistors (TFTs), applying zinc oxide as active semiconductors. The authors discuss soluble gate dielectrics, ZnO precursors, and dispersions containing nanostructures of the material, while different transistor configurations are analyzed with respect to their integration, compatibility, and device performance. Additionally, simple circuits (inverters and ring oscillators) and a complementary design employing (in)organic semiconducting materials are presented and discussed. Readers will benefit from concise information on cost-efficient materials and processes, applied in flexible and transparent electronic technology, such as the use of solution-based materials and dispersion containing nanostructures, as well as discussion of the physical fundamentals responsible for the operation of the thin-film transistors and the non-idealities of the device.
Book Synopsis Investigation of Indium Titanium Zinc Oxide Thin Film Transistors Fabricated by RF Sputtering System and Their Optoelectronic Application by : 吳韋廷
Download or read book Investigation of Indium Titanium Zinc Oxide Thin Film Transistors Fabricated by RF Sputtering System and Their Optoelectronic Application written by 吳韋廷 and published by . This book was released on 2017 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis An Investigation of the Performance and Stability of Zinc Oxide Thin-film Transistors and the Role of High-k Dielectrics by : Ngwashi Divine Khan
Download or read book An Investigation of the Performance and Stability of Zinc Oxide Thin-film Transistors and the Role of High-k Dielectrics written by Ngwashi Divine Khan and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent oxide semiconducting films have continued to receive considerable attention, from a fundamental and application-based point of view, primarily because of their useful fundamental properties. Of particular interest is zinc oxide (ZnO), an n-type semiconductor that exhibits excellent optical, electrical, catalytic and gas-sensing properties, and has many applications in various fields. In this work, thin film transistor (TFT) arrays based on ZnO have been prepared by reactive radio frequency (RF) magnetron sputtering. Prior to the TFT fabrication, ZnO layers were sputtered on to glass and silicon substrates, and the deposition parameters optimised for electrical resistivities suitable for TFT applications. The sputtering process was carried out at room temperature with no intentional heating. The aim of this work is to prepare ZnO thin films with stable semiconducting electrical properties to be used as the active channel in TFTs; and to understand the role of intrinsic point defects in device performance and stability. The effect of oxygen (O2) adsorption on TFT device characteristics is also investigated. The structural quality of the material (defect type and concentration), electrical and optical properties (transmission/absorption) of semiconductor materials are usually closely correlated. Using the Vienna ab-initio simulation package (VASP), it is predicted that O2 adsorption may influence film transport properties only within a few atomic layers beneath the adsorption site. These findings were exploited to deposit thin films that are relatively stable in atmospheric ambient with improved TFT applications. TFTs incorporating the optimised layer were fabricated and demonstrated very impressive performance metrics, with effective channel mobilities as high as 30 cm2/V-1s-1, on-off current ratios of 107 and sub-threshold slopes of 0.9? 3.2 V/dec. These were found to be dependent on film thickness (~15? 60 nm) and the underlying dielectric (silicon dioxide (SiO2), gadolinium oxide (Gd2O3), yttrium oxide (Y2O3) and hafnium oxide (HfO2)). In this work, prior to sputtering the ZnO layer (using a ZnO target of 99.999 % purity), the sputtering chamber was evacuated to a base pressure ~4 x 10-6 Torr. Oxygen (O2) and argon (Ar) gas (with O2/Ar ratio of varying proportions) were then pumped into the chamber and the deposition process optimised by varying the RF power between 25 and 500 W and the O2/Ar ratio between 0.010 to 0.375. A two-level factorial design technique was implemented to test specific parameter combinations (i.e. RF power and O2/Ar ratio) and then statistical analysis was utilised to map out the responses. The ZnO films were sputtered on glass and silicon substrates for transparency and resistivity measurements, and TFT fabrication respectively. For TFT device fabrication, ZnO films were deposited onto thermally-grown silicon dioxide (SiO2) or a high-k dielectric layer (HfO2, Gd2O3 and Y2O3) deposited by a metal-organic chemical deposition (MOCVD) process. Also, by using ab initio simulation as implemented in the?Vienna ab initio simulation package (VASP)?, the role of oxygen adsorption on the electrical stability of ZnO thin film is also investigated. The results indicate that O2 adsorption on ZnO layers could modify both the electronic density of states in the vicinity of the Fermi level and the band gap of the film. This study is complemented by studying the effects of low temperature annealing in air on the properties of ZnO films. It is speculated that O2 adsorption/desorption at low temperatures (150? 350 0C) induces variations in the electrical resistance, band gap and Urbach energy of the film, consistent with the trends predicted from DFT results.
Book Synopsis Characterization of ZnO Thin Film Transistors Fabricated with Photoresist-based Film-Profile Engineering by :
Download or read book Characterization of ZnO Thin Film Transistors Fabricated with Photoresist-based Film-Profile Engineering written by and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of Oxide-based Thin Film Transistors, and Process Development for Oxide Heterostructures by : Wantae Lim
Download or read book Fabrication and Characterization of Oxide-based Thin Film Transistors, and Process Development for Oxide Heterostructures written by Wantae Lim and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: This dissertation is focused on the development of thin film transistors (TFTs) using oxide materials composed of post-transitional cations with (n-1)d10ns0 (n[more than or equal to]4). The goal is to achieve high performance oxide-based TFTs fabricated at low processing temperature on either glass or flexible substrates for next generation display applications. In addition, etching mechanism and Ohmic contact formation for oxide heterostructure (ZnO/CuCrO2) system is demonstrated. The deposition and characterization of oxide semiconductors (In2O3-Zn0, and InGaZnO4) using a RF-magnetron sputtering system are studied. The main influence on the resistivity of the films is found to be the oxygen partial pressure in the sputtering ambient. The films remained amorphous and transparent (> 70%) at all process conditions. These films showed good transmittance at suitable conductivity for transistor fabrication. The electrical characteristics of both top- and bottom-gate type Indium Zinc Oxide (InZnO) and Indium Gallium Zinc Oxide (InGaZnO4)-based TFTs are reported. The InZnO films were favorable for depletion-mode TFTs due to their tendency to form oxygen vacancies, while enhancement-mode devices were realized with InGaZnO4 films. The InGaZnO4-based TFTs fabricated on either glass or plastic substrates at low temperature (
Book Synopsis A Study of Nanometer-Scaled ZnO Thin-Film Transistors Fabricated with Film Profile Engineering Method by :
Download or read book A Study of Nanometer-Scaled ZnO Thin-Film Transistors Fabricated with Film Profile Engineering Method written by and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Drain Current Modeling of Thin-film Zinc-oxide Field Effect Transistors of Various Fabrication Methods by : Daniel Wade Evans
Download or read book Drain Current Modeling of Thin-film Zinc-oxide Field Effect Transistors of Various Fabrication Methods written by Daniel Wade Evans and published by . This book was released on 2013 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of ZnO Bottom-Gate Thin Film Transistor on Glass Substrate by Sputtering by : 龍煥其
Download or read book Fabrication and Characterization of ZnO Bottom-Gate Thin Film Transistor on Glass Substrate by Sputtering written by 龍煥其 and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Zinc Oxide Thin-Film Transistors for 3D Microelectronic Applications by : Sang Ha Yoo
Download or read book Zinc Oxide Thin-Film Transistors for 3D Microelectronic Applications written by Sang Ha Yoo and published by . This book was released on 2021 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: As the current semiconductor industry trend deviates from Moore's Law due to quantum limits discovered upon further scaling of technology nodes, efforts are being put into three-dimensional (3D) stacking of semiconductor devices in integrated circuits (ICs). Since its conduction band pathway arises from its spherically shaped s-orbital, zinc oxide (ZnO) is a promising material for technological advancement towards 3D-stacked devices since it can theoretically retain its bulk mobility even if it is processed at a low temperature. Plasma-enhanced atomic layer deposition (PEALD) system using weak oxidants was utilized to deposit ZnO at a low temperature ( 200 °C), and ZnO thin-film transistors (TFTs) were fabricated based on this system for this study. This dissertation presents efforts to develop ZnO TFTs that are suitable for 3D electronics applications, focusing on high mobility, high current, and scalability aspects of the device. The relationship between the ZnO TFT mobility and the morphology of PEALD ZnO films is studied with emphasis on the grain size variation of the ZnO films. For the nanocrystalline PEALD ZnO films, no direct relationship between grain size and mobility was discovered from the study. On the other hand, a simple N2O-based PEALD Al2O3 passivation layer that enhances the performance of ZnO TFTs by an order of magnitude is developed. The passivated ZnO TFTs exhibit field-effect mobility 90 cm2/Vs and drive current >450 mA/mm. Multiple mobility extraction methods confirm that the high mobility value calculated for the passivated TFTs is not from measurement artifacts. The high current and mobility of the N2O PEALD passivated ZnO TFTs remain even when the passivation layer is selectively removed. The cause of the mobility boost is postulated to be hydrogen incorporation during the passivation process. The high performance of these devices is of interest for 3D ICs and other applications. Metals of different reactivity and work function are explored to overcome the Schottky barrier present in ZnO TFTs. Oxygen vacancies and zinc interstitials generated from the reaction between contact metal and ZnO semiconductors are believed to serve as the source of increased charge carriers to mimic a doping effect at TFT contacts. In addition, doped contact ZnO TFTs are demonstrated as well. We use PEALD ZnO films as the active layer and ALD ZnO films as the doped layer. The fabrication process of PEALD ZnO TFTs with ALD ZnO doped layer resembles that of back-channel-etched a-Si: H TFTs. An acetic acid-based ZnO etchant is used to controllably back etch the channel layer at a rate of 2 nm/sec to etch away the conductive ALD ZnO layer. The fabricated devices exhibit less dominance by the Schottky barrier at contacts. Ferroelectric field-effect transistors (FeFET) using low-temperature processed boron-doped aluminum nitride (Al1-xBxN; AlBN for simplicity) as the gate dielectric are also developed to serve as memory devices combined with ZnO TFT logic devices. With the help of a stable PEALD Al2O3 layer to prevent gate leakage, fabricated ZnO-AlBN FeFETs demonstrated counter-clockwise hysteresis, which is one of the indications of ferroelectricity present in the device. Double-gated ZnO-AlBN FeFETs are also fabricated to further establish that the devices exhibit polarization behavior with known field line terminations. ZnO TFTs and AlBN FeFETs are of interest to the future 3D microelectronics and ICs.
Book Synopsis Thin Film Transistor Technologies (TFTT VII) by : Yue Kuo
Download or read book Thin Film Transistor Technologies (TFTT VII) written by Yue Kuo and published by The Electrochemical Society. This book was released on 2005 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Nitrogen Doped Zinc Oxide Thin Film Transistor Fabricated by Plasma Enhanced Atomic Layer Deposition by : 李昶弘
Download or read book Nitrogen Doped Zinc Oxide Thin Film Transistor Fabricated by Plasma Enhanced Atomic Layer Deposition written by 李昶弘 and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
