Silicon Carbide

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Publisher : BoD – Books on Demand
ISBN 13 : 9533079681
Total Pages : 562 pages
Book Rating : 4.5/5 (33 download)

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Book Synopsis Silicon Carbide by : Moumita Mukherjee

Download or read book Silicon Carbide written by Moumita Mukherjee and published by BoD – Books on Demand. This book was released on 2011-10-10 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the materials aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.

Physics and Technology of Silicon Carbide Devices

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Publisher :
ISBN 13 : 9781681176437
Total Pages : 284 pages
Book Rating : 4.1/5 (764 download)

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Book Synopsis Physics and Technology of Silicon Carbide Devices by : George Gibbs

Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.

Materials Characterisation VII

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Publisher : WIT Press
ISBN 13 : 1845649486
Total Pages : 413 pages
Book Rating : 4.8/5 (456 download)

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Book Synopsis Materials Characterisation VII by : C.A. Brebbia

Download or read book Materials Characterisation VII written by C.A. Brebbia and published by WIT Press. This book was released on 2015-04-22 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing papers presented at the Seventh International Conference on Materials Characterisation, this book presents the latest advances in a rapidly developing field that requires the application of a combination of numerical and experimental methods. The work has been contributed by researchers who use computational methods, those who perform experiments, and those who combine both. Materials characterisation is important to ensuring that new products meet the needs of industry and consumers. The accurate characterisation of the physical and chemical properties of the materials requires the application of both experimental techniques and computer simulation methods. The wide range of materials now available, from metals to polymers and semiconductors to composites, necessitates a variety of experimental techniques and numerical methods. The papers in the book examine various combinations of techniques. The papers cover such topics as: Mechanical Characterisation and Testing; Micro and Macro Materials Characterisation; Cementitious Materials; Advances in Composites; Semiconductor Materials Characterisation; Computational Models and Experiments; Corrosion Problems.

Physics and Technology of Silicon Carbide Devices

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Publisher : BoD – Books on Demand
ISBN 13 : 9535109170
Total Pages : 416 pages
Book Rating : 4.5/5 (351 download)

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Book Synopsis Physics and Technology of Silicon Carbide Devices by : Yasuto Hijikata

Download or read book Physics and Technology of Silicon Carbide Devices written by Yasuto Hijikata and published by BoD – Books on Demand. This book was released on 2012-10-16 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.

Fundamentals of Silicon Carbide Technology

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Publisher : John Wiley & Sons
ISBN 13 : 1118313550
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)

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Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Two-Dimensional Nanostructures for Energy-Related Applications

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Publisher : CRC Press
ISBN 13 : 1315352850
Total Pages : 334 pages
Book Rating : 4.3/5 (153 download)

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Book Synopsis Two-Dimensional Nanostructures for Energy-Related Applications by : Kuan Yew Cheong

Download or read book Two-Dimensional Nanostructures for Energy-Related Applications written by Kuan Yew Cheong and published by CRC Press. This book was released on 2017-03-27 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt: This edited book focuses on the latest advances and development of utilizing two-dimensional nanostructures for energy and its related applications. Traditionally, the geometry of this material refers to "thin film" or "coating." The book covers three main parts, beginning with synthesis, processing, and property of two-dimensional nanostructures for active and passive layers followed by topics on characterization of the materials. It concludes with topics relating to utilization of the materials for usage in devises for energy and its related applications.

Silicon Carbide

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Publisher : Springer Science & Business Media
ISBN 13 : 3642188702
Total Pages : 911 pages
Book Rating : 4.6/5 (421 download)

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Book Synopsis Silicon Carbide by : Wolfgang J. Choyke

Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.

Handbook of Silicon Carbide Materials and Devices

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Publisher : CRC Press
ISBN 13 : 0429583958
Total Pages : 465 pages
Book Rating : 4.4/5 (295 download)

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Book Synopsis Handbook of Silicon Carbide Materials and Devices by : Zhe Chuan Feng

Download or read book Handbook of Silicon Carbide Materials and Devices written by Zhe Chuan Feng and published by CRC Press. This book was released on 2023-07-10 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.

Silicon Carbide--materials, Processing and Devices

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Publisher :
ISBN 13 :
Total Pages : 578 pages
Book Rating : 4.0/5 ( download)

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Book Synopsis Silicon Carbide--materials, Processing and Devices by :

Download or read book Silicon Carbide--materials, Processing and Devices written by and published by . This book was released on 2000 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Carbide and Related Materials

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Publisher :
ISBN 13 :
Total Pages : 868 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Silicon Carbide and Related Materials by :

Download or read book Silicon Carbide and Related Materials written by and published by . This book was released on 2000 with total page 868 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Properties and Applications of Silicon Carbide

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Publisher : BoD – Books on Demand
ISBN 13 : 9533072016
Total Pages : 550 pages
Book Rating : 4.5/5 (33 download)

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Book Synopsis Properties and Applications of Silicon Carbide by : Rosario Gerhardt

Download or read book Properties and Applications of Silicon Carbide written by Rosario Gerhardt and published by BoD – Books on Demand. This book was released on 2011-04-04 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, we explore an eclectic mix of articles that highlight some new potential applications of SiC and different ways to achieve specific properties. Some articles describe well-established processing methods, while others highlight phase equilibria or machining methods. A resurgence of interest in the structural arena is evident, while new ways to utilize the interesting electromagnetic properties of SiC continue to increase.

Advanced Silicon Carbide Devices and Processing

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Publisher : BoD – Books on Demand
ISBN 13 : 9535121685
Total Pages : 260 pages
Book Rating : 4.5/5 (351 download)

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Book Synopsis Advanced Silicon Carbide Devices and Processing by : Stephen Saddow

Download or read book Advanced Silicon Carbide Devices and Processing written by Stephen Saddow and published by BoD – Books on Demand. This book was released on 2015-09-17 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the production of the first commercially available blue LED in the late 1980s, silicon carbide technology has grown into a billion-dollar industry world-wide in the area of solid-state lighting and power electronics. With this in mind we organized this book to bring to the attention of those well versed in SiC technology some new developments in the field with a particular emphasis on particularly promising technologies such as SiC-based solar cells and optoelectronics. We have balanced this with the more traditional subjects such as power electronics and some new developments in the improvement of the MOS system for SiC MOSFETS. Given the importance of advanced microsystems and sensors based on SiC, we also included a review on 3C-SiC for both microsystem and electronic applications.

Scientific and Technical Aerospace Reports

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Publisher :
ISBN 13 :
Total Pages : 1102 pages
Book Rating : 4.X/5 (2 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 1102 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Hydrothermal Reactions for Materials Science and Engineering

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Publisher : Springer Science & Business Media
ISBN 13 : 9400907435
Total Pages : 503 pages
Book Rating : 4.4/5 (9 download)

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Book Synopsis Hydrothermal Reactions for Materials Science and Engineering by : S. Somiya

Download or read book Hydrothermal Reactions for Materials Science and Engineering written by S. Somiya and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: According to the late Professor Emeritus Seitaro Tsuboi,l the word 'hydrothermal' was used as early as 1849 by a British geologist, Sir Roderick Murchison (1792-187 I), in relation to the action of heated water in bringing about change in the earth's crust. The term abounds in later geological literature, and is most frequently met in connection with the processes that take place at a stage near the closing in the course of consolidation of magma. When a cooling magma reaches that stage, the residual liquid contains a large proportion of volatile components, chiefly water, and further cooling results in the formation of minerals of special interest or ore-deposits. A great concern of Tsuboi's as a petrologist was to elucidate the details of the nature of various actions involved in these 'hydrothermal processes', of which little was known. It is remarkable that, in the last few decades, extensive high-temperature and high-pressure experiments, in which water plays an important role, have become practicable in laboratories, owing to the development of new apparatus and new methods. As a result, the knowledge essential to the elucidation of 'hydrothermal processes' has been improved, but is still far from complete.

Fundamentals of Silicon Carbide Technology

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Author :
Publisher : John Wiley & Sons
ISBN 13 : 1118313526
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)

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Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

C,H,N and O in Si and Characterization and Simulation of Materials and Processes

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Author :
Publisher : North Holland
ISBN 13 :
Total Pages : 624 pages
Book Rating : 4.0/5 ( download)

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Book Synopsis C,H,N and O in Si and Characterization and Simulation of Materials and Processes by : A. Borghesi

Download or read book C,H,N and O in Si and Characterization and Simulation of Materials and Processes written by A. Borghesi and published by North Holland. This book was released on 1996 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry.The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.

STAR

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Publisher :
ISBN 13 :
Total Pages : 888 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis STAR by :

Download or read book STAR written by and published by . This book was released on 1973 with total page 888 pages. Available in PDF, EPUB and Kindle. Book excerpt: