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Author : Othon do Rego Monteiro Neto
Publisher :
ISBN 13 :
Total Pages : 304 pages
Book Rating : 4.:/5 (7 download)
Download or read book Thermal Oxidation of III-V Compound Semiconductors written by Othon do Rego Monteiro Neto and published by . This book was released on 1988 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Carl Wilmsen
Publisher : Springer Science & Business Media
ISBN 13 : 1468448358
Total Pages : 472 pages
Book Rating : 4.4/5 (684 download)
Download or read book Physics and Chemistry of III-V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Author : Serge Oktyabrsky
Publisher : Springer Science & Business Media
ISBN 13 : 1441915478
Total Pages : 451 pages
Book Rating : 4.4/5 (419 download)
Download or read book Fundamentals of III-V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author : C. W. Wilmsen
Publisher :
ISBN 13 :
Total Pages : 14 pages
Book Rating : 4.:/5 (227 download)
Download or read book Growth Mechanism and Properties of the Thermal and Anodic Oxides of the III-V Compound Semiconductors written by C. W. Wilmsen and published by . This book was released on 1985 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: The mechanisms of oxide growth on InP, GaP, GaAs, and InGaAs were investigated and their electrical properties measured. Islands were observed as the initial stage of anodization of InP and GaAs but the details of the growth on the two materials are different. The thermal oxides of InP and GaP also differ in composition and surface topography. InP forms bubbles and GaP has pits under the oxide. Traps at the deposited insulator/InP interface were also investigated. Originator supplied keywords include: Thermal oxidation.
Author : Tingkai Li
Publisher : CRC Press
ISBN 13 : 1439815232
Total Pages : 588 pages
Book Rating : 4.4/5 (398 download)
Download or read book III-V Compound Semiconductors written by Tingkai Li and published by CRC Press. This book was released on 2016-04-19 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more
Author : Abdulmotaleb Abdulwanis Suleiman
Publisher :
ISBN 13 :
Total Pages : 304 pages
Book Rating : 4.:/5 (643 download)
Download or read book Anodic Oxidation of III-V Compound Semiconductors written by Abdulmotaleb Abdulwanis Suleiman and published by . This book was released on 2006 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Keh Yung Cheng
Publisher : Springer Nature
ISBN 13 : 3030519031
Total Pages : 537 pages
Book Rating : 4.0/5 (35 download)
Download or read book III–V Compound Semiconductors and Devices written by Keh Yung Cheng and published by Springer Nature. This book was released on 2020-11-08 with total page 537 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.
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Author : Yan Wang
Publisher :
ISBN 13 :
Total Pages : 356 pages
Book Rating : 4.E/5 ( download)
Download or read book Integration of III-V Compound Semicond[cu]tors on Silicon MEMS Structures written by Yan Wang and published by . This book was released on 2000 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Robert K. Willardson
Publisher :
ISBN 13 :
Total Pages : 590 pages
Book Rating : 4.3/5 (91 download)
Download or read book Compound Semiconductors: Preparation of III-V compounds written by Robert K. Willardson and published by . This book was released on 1962 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hong H. Lee
Publisher :
ISBN 13 :
Total Pages : 380 pages
Book Rating : 4.F/5 ( download)
Download or read book Proceedings of the Thirteenth State-of-the Art Program on Compound Semiconductors (SOTAPOCS XIII) and the Symposium on Metallization of III-V Compound Semiconductors written by Hong H. Lee and published by . This book was released on 1991 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 840 pages
Book Rating : 4.3/5 (129 download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 840 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Zuhair A. Munir
Publisher :
ISBN 13 :
Total Pages : 684 pages
Book Rating : 4.:/5 (8 download)
Download or read book Proceedings of the Symposium on High Temperature Materials Chemistry--IV written by Zuhair A. Munir and published by . This book was released on 1988 with total page 684 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J.C. Woo
Publisher : CRC Press
ISBN 13 : 9780750310178
Total Pages : 548 pages
Book Rating : 4.3/5 (11 download)
Download or read book Compound Semiconductors 2004 written by J.C. Woo and published by CRC Press. This book was released on 2005-04-01 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 2004 was the 31st Symposium in this distinguished international series, held at Hoam Convention Center of Seoul National University, Seoul, Korea from September 12 to September 16, 2004. It attracted over 180 submissions from leading scientists in academic and industrial research institutions, and remains a major forum for the compound semiconductor research community since the first one held in 1966 at Edinburgh, UK under the name of 'International Symposium on Gallium Arsenide and related Compounds'. These proceedings provide an international perspective on the latest research and an overview of recent, important developments in III-V compounds, II-VI compounds and IV-IV compounds. In the total of 106 papers, notable progress was reported in the development of zinc oxide and spintronics. Steady advances were seen in traditional topics such as III-V based electronic and optoelectronic devices, growth and processing, and characterization. Novel research trends were observed in quantum structures, such as quantum wires and dots, which are promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications the book is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry and electronic and electrical engineering.
Author : Samares Kar
Publisher : Springer Science & Business Media
ISBN 13 : 3642365353
Total Pages : 515 pages
Book Rating : 4.6/5 (423 download)
Download or read book High Permittivity Gate Dielectric Materials written by Samares Kar and published by Springer Science & Business Media. This book was released on 2013-06-25 with total page 515 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .
Author : V. Swaminathan
Publisher : Mrs Proceedings
ISBN 13 :
Total Pages : 304 pages
Book Rating : 4.3/5 (91 download)
Download or read book Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures: Volume 184 written by V. Swaminathan and published by Mrs Proceedings. This book was released on 1990 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author : Pavel P. Konorov
Publisher : Princeton University Press
ISBN 13 : 0691223726
Total Pages : pages
Book Rating : 4.6/5 (912 download)
Download or read book Field Effect in Semiconductor-Electrolyte Interfaces written by Pavel P. Konorov and published by Princeton University Press. This book was released on 2021-01-12 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a state-of-the-art understanding of semiconductor-electrolyte interfaces. It provides a detailed study of semiconductor-electrolyte interfacial effects, focusing on the physical and electrochemical foundations that affect surface charge, capacitance, conductance, quantum effects, and other properties, both from the point of view of theoretical modeling and metrology. The wet-dry interface, where solid-state devices may be in contact with electrolyte solutions, is of growing interest and importance. This is because such interfaces will be a key part of hydrogen energy and solar cells, and of sensors that would have wide applications in medicine, genomics, environmental science, and bioterrorism prevention. The field effect presented here by Pavel Konorov, Adil Yafyasov, and Vladislav Bogevolnov is a new method, one that allows investigation of the physical properties of semiconductor and superconductor surfaces. Before the development of this method, it was impossible to test these surfaces at room temperature. The behavior of electrodes in electrolytes under such realistic conduction conditions has been a major problem for the technical realization of systems that perform measurements in wet environments. This book also describes some material properties that were unknown before the development of the field effect method. This book will be of great interest to students and engineers working in semiconductor surface physics, electrochemistry, and micro- and nanoelectronics.
Author : Paul H. Holloway
Publisher : Cambridge University Press
ISBN 13 : 0080946143
Total Pages : 937 pages
Book Rating : 4.0/5 (89 download)
Download or read book Handbook of Compound Semiconductors written by Paul H. Holloway and published by Cambridge University Press. This book was released on 2008-10-19 with total page 937 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.
