Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
The Schottky Barrier Height Of Noble Metal Schottky Contacts To N Gaas Under Hydrostatic Pressure
Download The Schottky Barrier Height Of Noble Metal Schottky Contacts To N Gaas Under Hydrostatic Pressure full books in PDF, epub, and Kindle. Read online The Schottky Barrier Height Of Noble Metal Schottky Contacts To N Gaas Under Hydrostatic Pressure ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis The Schottky Barrier Height of Noble Metal Schottky Contacts to N-GaAs Under Hydrostatic Pressure by : Christopher Scott Gworek
Download or read book The Schottky Barrier Height of Noble Metal Schottky Contacts to N-GaAs Under Hydrostatic Pressure written by Christopher Scott Gworek and published by . This book was released on 1999 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Mechanism of the Schottky Contact Formation in Metal/GaAs System by : Prashant Balvant Phatak
Download or read book Mechanism of the Schottky Contact Formation in Metal/GaAs System written by Prashant Balvant Phatak and published by . This book was released on 1995 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metal-Semiconductor Schottky Barrier Junctions and Their Applications by : B.L. Sharma
Download or read book Metal-Semiconductor Schottky Barrier Junctions and Their Applications written by B.L. Sharma and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the larger interest, it was also considered necessary to have the different topics of Schottky barrier junctions written by experts.
Book Synopsis Investigation of Schottky Barrier on GaAs and InP Using a Multi-Disciplined Approach by :
Download or read book Investigation of Schottky Barrier on GaAs and InP Using a Multi-Disciplined Approach written by and published by . This book was released on 1990 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: Major progress is reported in understanding and bringing under control metal/GaAs contacts. The key to this realization that defects at the interface can control the electrical properties of such contacts. By properly controlling these defects it appears that the Schottky barrier height may be varied strongly to obtain the desired values for specific applications, i.e. large barriers for Schottky gates and small values for ohmic contacts. Evidence is presented that the key defects are As and Ga antisites. The Fermi level position at the interface, Ef, is the most important parameter in determining the electrical properties of the contract. Under normal conditions the As antisite levels dominate and the Fermi level is pinned near mid-gap. Producing excess As moves Ef toward the CBM whereas, excess Ga moves it toward the VBM.
Book Synopsis Thermally Stable Metal/GaAs Contacts by : Jian Ding
Download or read book Thermally Stable Metal/GaAs Contacts written by Jian Ding and published by . This book was released on 1989 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Schottky Barrier Height of Metal-semiconductor Contacts Formed Through a Novel Metallization Technique by : John Edward Lynch
Download or read book The Schottky Barrier Height of Metal-semiconductor Contacts Formed Through a Novel Metallization Technique written by John Edward Lynch and published by . This book was released on 1996 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 998 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Schottky Barrier Height Control at Epitaxial NiAl by :
Download or read book Schottky Barrier Height Control at Epitaxial NiAl written by and published by . This book was released on 1992 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent developments in the use of interlayers to tailor the Schottky barrier height (SBH) at a metal/GaAs interface are discussed. The goal has been to gain control of band bending in the interfacial region by modifying both the interface Fermi energy and the charge density in the depletion region. The approach has been to grow both the interlayer and the metal overlayer under ultrahigh vacuum conditions by molecular beam epitaxy, and then to determine the chemistry of interface formation, structure, and band bending by x-ray photoelectron spectroscopy and diffraction and by low-energy electron diffraction. The interface Fermi energy can be changed from the usual midgap value of 0.7--0.8 eV relative to the band edge by the use of epitaxial transition metal aluminide (TMA) overlayers such as NiAl. The unique chemistry of interface formation between this intermetallic compound and GaAs pins the Fermi level [approximately]0.3--0.4 eV above the valence band maximum, and results in a SBH of [approximately]1 eV. The SBH can be increased to [approximately]1.2 eV by the use of a wide bandgap interlayer such as AlAs. The charge density in the depletion region can be changed by growing an n[sup +]-type group IV interlayer between the TMA overlayer and GaAs substrate. Charge transfer from the interlayer to an n-type substrate reduces the space charge density, and thereby lowers the band bending and, thus, the SBH to [approximately]0.5 eV. The use of these interlayers then produces a range of SBH values of [approximately]0.7 eV, which is a significant improvement over the rather narrow range of 0.1--0.2 eV that results from conventional metallizations. The fundamental interface science that underpins these results is discussed, and an application to complementary digital GaAs circuit design that may significantly reduce gate leakage is given.
Download or read book Energy written by and published by . This book was released on 1980 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Effect of Barrier Height on Friction Behavior of the Semiconductors Silicon and Gallium Arsenide in Contact with Pure Metals by : Hiroshi Mishina
Download or read book Effect of Barrier Height on Friction Behavior of the Semiconductors Silicon and Gallium Arsenide in Contact with Pure Metals written by Hiroshi Mishina and published by . This book was released on 1984 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Schottky Barriers written by Saul T. Redd and published by . This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "A Schottky barrier is an electrostatic interface between a metal and a semiconductor that plays a vital role in many electronic devices. Schottky Barriers: An Overview opens with a brief review of the metal-semiconductor Schottky junction, the basic charge transport theory and the issues associated with these barriers. Additionally, the authors provide an overview of recent developments in the field of Schottky contacts to ZnO and related materials, such as ZnMgO, BeZnO, and BeMgZnO. Despite the fundamental importance of Schottky barrier height, the mechanisms which control the barrier formation are still far from understood. As such, for a better understanding of Schottky barriers and barrier height, the authors discuss various empirical models. In closing, AlGaN/GaN Schottky barrier diodes with and without in-situ silicon carbon nitride cap layers are investigated, with the fabricated SBD with a SiCN cap layer exhibiting improved electrical characteristics"--
Download or read book Metals Abstracts Index written by and published by . This book was released on 1996 with total page 1634 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Schottky Barriers on Compound Semiconductors by : John S. Best (Physicist)
Download or read book Schottky Barriers on Compound Semiconductors written by John S. Best (Physicist) and published by . This book was released on 1979 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt: I. HgSe is deposited on various semiconductors, forming a semimetal/semiconductor "Schottky barrier" structure. Polycrystalline, evaporated HgSe produces larger Schottky barrier heights on n-type semiconductors than does Au, the most electronegative of the elemental metals. The barrier heights are about 0.5 eV greater than those of Au on ionic semiconductors such as ZnS, and 0.1 to 0.2 eV greater for more covalently bonded semiconductors. A novel structure, which is both a lattice matched heterostructure and a Schottky barrier, is fabricated by epitaxial growth of HgSe on CdSe using hydrogen transport CVD. The Schottky barrier height for this structure is 0.73 ± 0.02 eV, as measured by the photoresponse method. This uncertainty is unusually small; and the magnitude is greater by about a quarter volt than is achievable with Au, in qualitative agreement with ionization potential arguments. II. The Schottky barrier height of Au on chemically etched n-Ga1-x AlxAs was measured as a function of x. As x increases, the barrier height rises to a value of about 1.2 eV at x H"0.45, then decreases to about 1.0 eV as x approaches 0.83. The barrier height deviates in a linear way from the value predicted by the "common anion" rule as the AlAs mole fraction increases. This behavior is related to chemical reactivity of the Ga1-x AlxAs surface.
Book Synopsis Toward Understanding the Electrical Properties of Metal/semiconductor Schottky Contacts by : Karthik Sarpatwari
Download or read book Toward Understanding the Electrical Properties of Metal/semiconductor Schottky Contacts written by Karthik Sarpatwari and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The work presented in this thesis comprises of two parts. Part I deals with Schottky contacts to the wide bandgap (WBG) semiconductors SiC, GaN and ZnO. These semiconductors offer great promise for a wide variety of electronic and optoelectronic applications. Schottky barriers to WBG semiconductors are attractive in particular for high temperature/high power diodes, photodetectors, and gas sensors. However, the Schottky barriers exhibit non-ideal behavior, due in part to inhomogeneities originating from immature crystal growth and device processing technologies. Apart from being a versatile electronic component, the Schottky diode is a valuable test structure. The Schottky contact is routinely used to probe substrate and epilayer quality by different electrical characterization techniques. It is well established that the current-voltage-temperature (I-V-T) characteristics of Schottky contacts are routinely affected by the presence of barrier height inhomogeneities (BHI). Consequently, Schottky diode parameters such as the Schottky barrier height and the Richardson constant extracted using the I-V-T measurements can deviate from their actual values. The effects of BHI on the extracted Schottky barrier height have been studied in the literature. However, the effects of BHI on the Richardson constant have not been thoroughly explored and are the focus of the first part of this thesis. Based on the inhomogeneous Schottky barrier model provided by Tung, a new method for the extraction of the Richardson constant is developed. The new method is applied to the Richardson constant determination of n-type ZnO and GaN. Excellent agreement with the theoretical value is obtained in both cases. The advent of the nanoelectronics era has resulted in the Schottky contact evolving from the relatively simple, planar structure into a more complex structure. Compared to bulk Schottky contacts, the Schottky barrier properties are expected to be widely different at the nanoscale. For example, the I-V characteristics of nanoscale Schottky contacts are affected by the contact size and geometry. Due to the increased surface-to-volume ratio, the conduction properties of nanoscale Schottky contacts are also influenced by surface conditions such as surface charge and traps. Depending on contact size, geometry and surface conditions, an enhanced tunneling current contribution can be expected, further distorting the I-V characteristics from the simple thermionic emission model. Determination of the true Schottky barrier height in nanoscale contacts to semiconductor nanowires is important from both technological and fundamental scientific perspectives. In the second part of this thesis, we employ a simulation-based approach to study the conduction properties of an axial Schottky nanocontact to a surround-gate nanowire. A systematic study of the effects of surface charge on the I-V characteristics of the axial nano Schottky/nanowire system is undertaken. Based on the study, a method is proposed to extract the true Schottky barrier height from the I-V characteristics. The proposed method can serve as a valuable aid for interpreting experimental I-V data and can facilitate exploration of size effects on the Schottky barrier formation at the nanoscale.
Book Synopsis Energy: a Continuing Bibliography with Indexes by :
Download or read book Energy: a Continuing Bibliography with Indexes written by and published by . This book was released on 1980 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1860 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Schottky Barrier Formation at Metal-quantum Well Interfaces Studied with Ballistic Electron Emission Microscopy by : Cristian Alexandru Tivarus
Download or read book Schottky Barrier Formation at Metal-quantum Well Interfaces Studied with Ballistic Electron Emission Microscopy written by Cristian Alexandru Tivarus and published by . This book was released on 2005 with total page 233 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: A number of possible near and long term semiconductor device technologies rely on abrupt metal-semiconductor interfaces with nm-dimensions, and with internal nm-scale inhomogeneity. It is therefore very important to be able probe the electronic properties of these buried interfaces with sub-10 nm resolution and to find out the impact of small-size effects on their transport properties. In our study we used Ballistic Electron Emission Microscopy (BEEM) and finite-element electrostatic modeling to quantify how small-size effects modify the energy barrier at metal/semiconductor quantum wells (QWs), formed by making Schottky contacts to cleaved edges of GaAs quantum wells. Our model semiconductor heterostructure is formed as a sequence of AlGaAs/GaAs/AlGaAs layers and contains a sequence of GaAs QWs with thickness between 1 and 15 nm. The Schottky barrier height (SBH) measurements as a function of QW thickness showed that the SBH value increases as the QW thickness is decreased, by up to 140 meV for a 1 nm thick QW. This is mostly due to a large quantum-confinement increase (200 meV for a 1nm QW), modified by smaller decreases due to environmental electric field effects. Our modeling gave excellent quantitative agreement with measurements for a wide range of QW thickness when both these effects are considered. In a separate study, the cleaved QW were used as nm-apertures to estimate the resolution of BEEM as a function of metal film thickness. We found that BEEM resolution degrades as the top metal film layer is made thicker, from 12 nm for a 4 nm thick Au layer, up to 22 nm for a 15 nm thick Au layer. Also presented is modeling of the electrostatic potential profile around charged threading dislocations (TD) in GaN, close to a metal-semiconductor interface, and its dependence on the energy of acceptor sites along the dislocation. We found that for energy values higher than 1.13 eV the near interface TD acceptors are completely filled right up to the interface. This results in a very large negative space charge and an increase in the local barrier height close to the TD core that should be observable by techniques such as BEEM.
