The Realization of Ultra High Speed Modulation-doped Field Effect Transistors

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Publisher :
ISBN 13 :
Total Pages : 434 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis The Realization of Ultra High Speed Modulation-doped Field Effect Transistors by : Loi Dinh Nguyen

Download or read book The Realization of Ultra High Speed Modulation-doped Field Effect Transistors written by Loi Dinh Nguyen and published by . This book was released on 1989 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Materials Science and Technology: Strained-Layer Superlattices

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Publisher : Academic Press
ISBN 13 : 0080864309
Total Pages : 443 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis Materials Science and Technology: Strained-Layer Superlattices by :

Download or read book Materials Science and Technology: Strained-Layer Superlattices written by and published by Academic Press. This book was released on 1991-02-20 with total page 443 pages. Available in PDF, EPUB and Kindle. Book excerpt: The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.

Modulation-doped Field-effect Transistors

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Publisher : Institute of Electrical & Electronics Engineers(IEEE)
ISBN 13 :
Total Pages : 484 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Modulation-doped Field-effect Transistors by : Heinrich Daembkes

Download or read book Modulation-doped Field-effect Transistors written by Heinrich Daembkes and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Analysis and Simulation of Heterostructure Devices

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Publisher : Springer Science & Business Media
ISBN 13 : 3709105609
Total Pages : 309 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Analysis and Simulation of Heterostructure Devices by : Vassil Palankovski

Download or read book Analysis and Simulation of Heterostructure Devices written by Vassil Palankovski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

Scientific and Technical Aerospace Reports

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Publisher :
ISBN 13 :
Total Pages : 1572 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992 with total page 1572 pages. Available in PDF, EPUB and Kindle. Book excerpt:

A Simple Monte Carlo Simulation of Bulk Gallium Arsenide with Implications for Modulation-doped Field Effect Transistors

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Publisher :
ISBN 13 :
Total Pages : 188 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis A Simple Monte Carlo Simulation of Bulk Gallium Arsenide with Implications for Modulation-doped Field Effect Transistors by : Alan Forest Acker

Download or read book A Simple Monte Carlo Simulation of Bulk Gallium Arsenide with Implications for Modulation-doped Field Effect Transistors written by Alan Forest Acker and published by . This book was released on 1996 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Field Effect Transistors, A Comprehensive Overview

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Publisher : John Wiley & Sons
ISBN 13 : 1119155495
Total Pages : 471 pages
Book Rating : 4.1/5 (191 download)

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Book Synopsis Field Effect Transistors, A Comprehensive Overview by : Pouya Valizadeh

Download or read book Field Effect Transistors, A Comprehensive Overview written by Pouya Valizadeh and published by John Wiley & Sons. This book was released on 2016-02-23 with total page 471 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales. Links the discussion of contemporary transistor devices to physical processes Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author Contains examples and end-of-chapter problems Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs. Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.

RF and Microwave Semiconductor Device Handbook

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Publisher : CRC Press
ISBN 13 : 135183620X
Total Pages : 448 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis RF and Microwave Semiconductor Device Handbook by : Mike Golio

Download or read book RF and Microwave Semiconductor Device Handbook written by Mike Golio and published by CRC Press. This book was released on 2017-12-19 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.

A Physical Model for the Bias Dependence of the Modulation-doped Field-effect Transistor's High-frequency Performance

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Publisher :
ISBN 13 :
Total Pages : 786 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis A Physical Model for the Bias Dependence of the Modulation-doped Field-effect Transistor's High-frequency Performance by : Mark Christopher Foisy

Download or read book A Physical Model for the Bias Dependence of the Modulation-doped Field-effect Transistor's High-frequency Performance written by Mark Christopher Foisy and published by . This book was released on 1990 with total page 786 pages. Available in PDF, EPUB and Kindle. Book excerpt:

High-speed Electronics and Device Scaling

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Publisher :
ISBN 13 :
Total Pages : 300 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis High-speed Electronics and Device Scaling by : Lester F. Eastman

Download or read book High-speed Electronics and Device Scaling written by Lester F. Eastman and published by . This book was released on 1990 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Handbook of Thin Film Devices: Hetero-structures for high performance devices

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Publisher : Academic Press
ISBN 13 :
Total Pages : 378 pages
Book Rating : 4.X/5 (4 download)

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Book Synopsis Handbook of Thin Film Devices: Hetero-structures for high performance devices by : Maurice H. Francombe

Download or read book Handbook of Thin Film Devices: Hetero-structures for high performance devices written by Maurice H. Francombe and published by Academic Press. This book was released on 2000 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The highly industrialized world we live in depends for its survival and further growth on advanced electronic technologies which place a premium on rapidly improved performance versus size, weight, and cost. Small computers, high-definition TV, digital camcorders, flat-panel displays, and robotic systems are but a few examples of miniatured device technologies which are of critical importance to emerging societal, industrial, defense, and space needs. All of these technologies depend sensitively on the availability of miniature thin film components in array and/or integrated formats. This book provides that first multi-topical coverage of the semiconductor, optical, superconductor, magnetic, and ferroelectric devices and technologies responding to these needs. This book comprises five topical volumes edited by world authorities in their fields, id est semiconductor junction devices, semiconductor optics, superconducting film devices, magnetic film devices, and ferroelectric film devices. Well-known experts were invited to cover recent progress in aspects ranging from deposition and fabrication to device modeling, measurements, and new cutting-edge design approached for improved performance. This multitopic approach effectively demonstrates the broad-based and pervasive character of thin film techniques that impact and control a vast array of device functions that are critical to developments in computer technology, communications, television, defense and space systems, and industrial and consumer products. Readers are provided with both broad critical overviews and research level analysis and technical details. Key Features * A comprehensive discussion of the most promising and completely developed of thin film devices which impact the entire field of high-tech components and systems for commercial, defense and space applications * Edited and written by internationally known, authoritative experts and innovators, familiar with all aspects of research and development in their fields and with current and potential applications * Presents the reader with informed assessments of all candidate solid state film devices now being optimized for advanced application, e.g., in flat panel displays, solar energy conversion, high-speed and power components, radar technology, infrared imaging , advanced computers, laser sources, and numerous other arenas * Provides a well-balanced coverage of materials growth and optimization, thin-film device modelling , device fabrication and characterization, and future development directions;These inputs are critically important to both educators, designers, device technologists and manufacturers, and to system engineers * Furnishes useful insights on processing compatibility, materials and film device stability, interface engineering, cryogenic requirements and operation, lithography and micro-machining, and integrability for sub-systems * Provides a broad-based view of alternative and/or complimentary film device technologies in a single, well-referenced source * Ensures complete and detailed overview of solid-state device topics, comprehensive bibliographical information, and expert guidance in advanced and sophisticated areas of device technology and potental applications * Furnishes invaluable insights on competitive state-of-the-art thin film semiconductor, photonics, superconductor, magnetic and ferroelectric technologies, processing and compatibility,device options, performance potential and prospects for essentially all solid-state film components * An essential information source and primer for educators , researchers, engineers and technology leaders supplying a wealth of background theoretical and experimental details, as well as guidance for further advanced research and development , thesis topics and high-tech product design * Identifies key processing, fabrication, design, integration, compatibility problems and solutions involved in successful development of high-performance and stable device and sub-system architectures.

Novel Gallium Nitride Based Microwave Noise and Power Heterostructure Field Effect Transistors

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Publisher :
ISBN 13 :
Total Pages : 790 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Novel Gallium Nitride Based Microwave Noise and Power Heterostructure Field Effect Transistors by : Eduardo Martin Chumbes

Download or read book Novel Gallium Nitride Based Microwave Noise and Power Heterostructure Field Effect Transistors written by Eduardo Martin Chumbes and published by . This book was released on 2001 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Strained Silicon Heterostructures

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Publisher : IET
ISBN 13 : 9780852967782
Total Pages : 520 pages
Book Rating : 4.9/5 (677 download)

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Book Synopsis Strained Silicon Heterostructures by : C. K. Maiti

Download or read book Strained Silicon Heterostructures written by C. K. Maiti and published by IET. This book was released on 2001 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.

Electron Beam Nanolithography for the Fabrication of Gallium Arsenide Heterojunction Transistors and Lasers

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Publisher :
ISBN 13 :
Total Pages : 154 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Electron Beam Nanolithography for the Fabrication of Gallium Arsenide Heterojunction Transistors and Lasers by : Richard Charles Tiberio

Download or read book Electron Beam Nanolithography for the Fabrication of Gallium Arsenide Heterojunction Transistors and Lasers written by Richard Charles Tiberio and published by . This book was released on 1994 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Modulation-doped Field-effect Transistors

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Publisher : Institute of Electrical & Electronics Engineers(IEEE)
ISBN 13 :
Total Pages : 544 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Modulation-doped Field-effect Transistors by : Heinrich Daembkes

Download or read book Modulation-doped Field-effect Transistors written by Heinrich Daembkes and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Publications of the National Institute of Standards and Technology ... Catalog

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Publisher :
ISBN 13 :
Total Pages : 1162 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis Publications of the National Institute of Standards and Technology ... Catalog by : National Institute of Standards and Technology (U.S.)

Download or read book Publications of the National Institute of Standards and Technology ... Catalog written by National Institute of Standards and Technology (U.S.) and published by . This book was released on 1994 with total page 1162 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Simulation of Semiconductor Processes and Devices 1998

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Publisher : Springer Science & Business Media
ISBN 13 : 3709168279
Total Pages : 423 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Simulation of Semiconductor Processes and Devices 1998 by : Kristin De Meyer

Download or read book Simulation of Semiconductor Processes and Devices 1998 written by Kristin De Meyer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 423 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: • semiconductor equipment simulation • process modeling and simulation • device modeling and simulation of complex structures • interconnect modeling • integrated systems for process, device, circuit simulation and optimisation • numerical methods and algorithms • compact modeling and parameter extraction • modeling for RF applications • simulation and modeling of new devices (heterojunction based, SET’s, quantum effect devices, laser based ...)