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Author : Hisham Z. Massoud
Publisher :
ISBN 13 :
Total Pages : 804 pages
Book Rating : 4.3/5 (91 download)
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996 written by Hisham Z. Massoud and published by . This book was released on 1996 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : B.E. Deal
Publisher : Springer Science & Business Media
ISBN 13 : 1489915885
Total Pages : 505 pages
Book Rating : 4.4/5 (899 download)
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Author : Hisham Z. Massoud
Publisher :
ISBN 13 :
Total Pages : 562 pages
Book Rating : 4.3/5 (91 download)
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000 written by Hisham Z. Massoud and published by . This book was released on 2000 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : B.E. Deal
Publisher : Springer Science & Business Media
ISBN 13 : 1489907742
Total Pages : 543 pages
Book Rating : 4.4/5 (899 download)
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
Author : Hisham Z. Massoud
Publisher : ECS Transactions
ISBN 13 : 9781566774307
Total Pages : 304 pages
Book Rating : 4.7/5 (743 download)
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--5 written by Hisham Z. Massoud and published by ECS Transactions. This book was released on 2005-01-01 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions places a focus on ultrathin gate dielectrics: novel technologies, characterization methods, process modeling, fundamental limits, and projections for scaling the gate oxide thickness.
Author : R. Ekwal Sah
Publisher : The Electrochemical Society
ISBN 13 : 1566777100
Total Pages : 871 pages
Book Rating : 4.5/5 (667 download)
Download or read book Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10 written by R. Ekwal Sah and published by The Electrochemical Society. This book was released on 2009 with total page 871 pages. Available in PDF, EPUB and Kindle. Book excerpt: The issue of ECS Transactions contains papers presented at the Tenth International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics held in San Francisco on May 24-29, 2009. The papers address a very wide range of fabrication and characterization techniques, and applications of thin dielectric films in microelectronic and optoelectronic devices. More specific topics addressed by the papers include reliability, interface states, gate oxides, passivation, and dielctric breakdown.
Author : Eric Garfunkel
Publisher : Springer Science & Business Media
ISBN 13 : 9401150087
Total Pages : 503 pages
Book Rating : 4.4/5 (11 download)
Download or read book Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices written by Eric Garfunkel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
Author : J. Keith Nelson
Publisher : Springer Science & Business Media
ISBN 13 : 1441915915
Total Pages : 374 pages
Book Rating : 4.4/5 (419 download)
Download or read book Dielectric Polymer Nanocomposites written by J. Keith Nelson and published by Springer Science & Business Media. This book was released on 2009-12-17 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dielectric Polymer Nanocomposites provides the first in-depth discussion of nano-dielectrics, an emerging and fast moving topic in electrical insulation. The text begins with an overview of the background, principles and promise of nanodielectrics, followed by a discussion of the processing of nanocomposites and then proceeds with special considerations of clay based processes, mechanical, thermal and electric properties and surface properties as well as erosion resistance. Carbon nanotubes are discussed as a means of creation of non linear conductivity, the text concludes with a industrial applications perspective.
Author : Vikram J. Kapoor
Publisher : The Electrochemical Society
ISBN 13 : 9781566770484
Total Pages : 644 pages
Book Rating : 4.7/5 (74 download)
Download or read book Proceedings of the Third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films written by Vikram J. Kapoor and published by The Electrochemical Society. This book was released on 1994 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Peter Pichler
Publisher : Springer Science & Business Media
ISBN 13 : 3709105978
Total Pages : 576 pages
Book Rating : 4.7/5 (91 download)
Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Author : Howard R. Huff
Publisher : The Electrochemical Society
ISBN 13 : 9781566773744
Total Pages : 650 pages
Book Rating : 4.7/5 (737 download)
Download or read book Semiconductor Silicon 2002 written by Howard R. Huff and published by The Electrochemical Society. This book was released on 2002 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : S. P. Murarka
Publisher :
ISBN 13 :
Total Pages : 768 pages
Book Rating : 4.3/5 (91 download)
Download or read book Interface Control of Electrical, Chemical, and Mechanical Properties: Volume 318 written by S. P. Murarka and published by . This book was released on 1994-05-12 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author : Victor E Borisenko
Publisher : World Scientific
ISBN 13 : 9814485896
Total Pages : 597 pages
Book Rating : 4.8/5 (144 download)
Download or read book Physics, Chemistry And Application Of Nanostructures: Reviews And Short Notes To Nanomeeting 2003 written by Victor E Borisenko and published by World Scientific. This book was released on 2003-04-29 with total page 597 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains invited review papers and short notes presented at the International Conference on Physics, Chemistry and Application of Nanostructures (Nanomeeting 2003).
Author :
Publisher : Newnes
ISBN 13 : 0080932282
Total Pages : 3572 pages
Book Rating : 4.0/5 (89 download)
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Author :
Publisher :
ISBN 13 :
Total Pages : 306 pages
Book Rating : 4.3/5 (91 download)
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by and published by . This book was released on 1999 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 802 pages
Book Rating : 4.:/5 (45 download)
Download or read book Surface Science Reports written by and published by . This book was released on 1999 with total page 802 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher : Elsevier
ISBN 13 : 0080534767
Total Pages : 967 pages
Book Rating : 4.0/5 (85 download)
Download or read book New Insulators Devices and Radiation Effects written by and published by Elsevier. This book was released on 1999-02-11 with total page 967 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.
