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Author : Russell Lee Gillenwater
Publisher :
ISBN 13 :
Total Pages : 730 pages
Book Rating : 4.:/5 (8 download)
Download or read book The Measurement of Contact Resistivity in Low Resistance Ohmic Contacts written by Russell Lee Gillenwater and published by . This book was released on 1987 with total page 730 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : William M. Loh
Publisher : Ann Arbor, Mich. : University Microfilms International
ISBN 13 :
Total Pages : 136 pages
Book Rating : 4.:/5 (227 download)
Download or read book Modeling and Measurement of Contact Resistances written by William M. Loh and published by Ann Arbor, Mich. : University Microfilms International. This book was released on 1988 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper presents a generalized model of ohmic contacts and a unified approach for the accurate extraction of specific contact resistivity rho(c) for ohmic contacts from measured contact resistance using the cross bridge Kelvin resistor, the contact end resistor, and the transmission line tap resistor test structures. A general three-dimensional (3-D) model of the contacts has been developed from the first principles and has been reduced to 2-D, 1-D, and 0-D (one lump) models with the necessary approximations. It is shown that the conventional 1-D models overestimate the value of rho(c) because of the parasitic resistance due to 2-D current flow around the periphery of the contact window. Using 2-D simulations, we have accurately modeled the current crowding effects and have extracted accurate values of rho(c) independent of contact size and the test structure type. A theory of scaling of contacts has been developed and is applied to commonly used structures. A universal set of curves has been derived for each particular contact resistance test structure and, given the geometry of the structure, these allow accurate determination of RHO (c) without the actual use of the 2-D simulator. Experimental and theoretical ree test structures has been compared. Accurate values of rho(c) for various contact materials to n+ and p+ Si have been determined. The data confirm that in the past researchers have overestimated rho(c) and that rho(c) will not limit device performance even with submicrometer design rules. (Reprints).
Author : Electrochemical Society
Publisher :
ISBN 13 :
Total Pages : 372 pages
Book Rating : 4.F/5 ( download)
Download or read book Ohmic Contacts to Semiconductors written by Electrochemical Society and published by . This book was released on 1969 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 16 pages
Book Rating : 4.:/5 (683 download)
Download or read book Low Resistivity Ohmic Contacts to Moderately Doped N-GaAs with Low Temperature Processing written by and published by . This book was released on 1994 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: A low-temperature process for forming ohmic contacts to moderately doped GaAs has been optimized using a PdGe metallization scheme. Minimum specific contact resistivity of 1.5 x 10−6 -cm2 has been obtained with a low anneal temperature of 250 C. Results for optimizing both time and temperature are reported and compared to GeAu n-GaAs contacts. Material compositions was analyzed by x-ray photoelectron spectroscopy and circuit metal interconnect contact resisitivity to the low-temperature processed PdGe contacts is reported. For the lowest temperature anneals considered, excess Ge on the ohmic contact layer is suspected of degrading interconnect metal contacts, while higher temperature anneals permitted interconnect metal formation with negligible contact resistivity. Atomic force microscopy measurements showed that the PdGe surface morphology is much more uniform than standard GeAu contacts.
Author : E. H. Rhoderick
Publisher : Oxford University Press, USA
ISBN 13 : 9780198593355
Total Pages : 252 pages
Book Rating : 4.5/5 (933 download)
Download or read book Metal-semiconductor Contacts written by E. H. Rhoderick and published by Oxford University Press, USA. This book was released on 1988 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: This second edition brings a greatly expanded treatment of the physics of Schottky-barrier formation to its comprehensive discussion of modern semiconductor technology. Topics covered include the current/voltage relationship, the capacitance of rectifying contacts, and practical methods of fabricating contacts. Written for semiconductor technologists and physicists engaged in research on semiconductor interfaces, this text emphasizes practical implications wherever they are relevant to device technology.
Author : Dieter K. Schroder
Publisher : John Wiley & Sons
ISBN 13 : 0471739065
Total Pages : 800 pages
Book Rating : 4.4/5 (717 download)
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author : Harzara S. Rathore
Publisher :
ISBN 13 :
Total Pages : 516 pages
Book Rating : 4.F/5 ( download)
Download or read book Proceedings of the Symposia on Reliability of Semiconductor Devices and Interconnection and Multilevel Metallization, Interconnection, and Contact Technologies written by Harzara S. Rathore and published by . This book was released on 1989 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hadis Morkoç
Publisher : John Wiley & Sons
ISBN 13 : 3527628428
Total Pages : 883 pages
Book Rating : 4.5/5 (276 download)
Download or read book Handbook of Nitride Semiconductors and Devices, Electronic and Optical Processes in Nitrides written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 883 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors.
Author : Konstantinos Zekentes
Publisher : Materials Research Forum LLC
ISBN 13 : 1945291842
Total Pages : 250 pages
Book Rating : 4.9/5 (452 download)
Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-25 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
Author : Robert F. Pierret
Publisher : Prentice Hall
ISBN 13 : 9780201122954
Total Pages : 146 pages
Book Rating : 4.1/5 (229 download)
Download or read book Semiconductor Fundamentals written by Robert F. Pierret and published by Prentice Hall. This book was released on 1988-01-01 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents those terms, concepts, equations, and models that are routinely used in describing the operational behavior of solid state devices. The second edition provides many new problems and illustrative examples.
Author : Long-Ching Wang
Publisher :
ISBN 13 :
Total Pages : 340 pages
Book Rating : 4.:/5 (318 download)
Download or read book The Development and Application of Nonspiking Ohmic Contacts Formed by Solid-phase Reactions to N-type Gallium Arsenide written by Long-Ching Wang and published by . This book was released on 1991 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Sergey Rumyantsev
Publisher : World Scientific
ISBN 13 : 981447777X
Total Pages : 342 pages
Book Rating : 4.8/5 (144 download)
Download or read book Sic Materials And Devices - Volume 1 written by Sergey Rumyantsev and published by World Scientific. This book was released on 2006-07-25 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Author : T. Schreyer
Publisher :
ISBN 13 :
Total Pages : 16 pages
Book Rating : 4.:/5 (227 download)
Download or read book Comparison of Test Structures Used for the Measurement of Low Resistive Metal-Semiconductor Contacts written by T. Schreyer and published by . This book was released on 1985 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: Specific contact resistivity rho (c) (O low-sq cm), which can be extracted from measured contact resistance Rc (O low), is a commonly used measure of metal-semiconductor contact quality. It is independent of current flow and contact geometry, and depends only on the transport properties of the metal to semiconductor junction. Unfortunately, extraction of rho (c) obtained from test structures differing in size of design often disagree by as much as an order of magnitude primarily because simple 1-D models which are used to extract the value of rho (c) can not account for fringing resistance associated with the 2-D nature of the current distribution around the contact.
Author : Michael Joseph Hafich
Publisher :
ISBN 13 :
Total Pages : 290 pages
Book Rating : 4.:/5 (319 download)
Download or read book Al/n+Ge/n+Si Heterojunction Ohmic Contact written by Michael Joseph Hafich and published by . This book was released on 1986 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 668 pages
Book Rating : 4.:/5 (6 download)
Download or read book Journal of Research of the National Institute of Standards and Technology written by and published by . This book was released on 1993 with total page 668 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reports NIST research and development in the physical and engineering sciences in which the Institute is active. These include physics, chemistry, engineering, mathematics, and computer sciences. Emphasis on measurement methodology and the basic technology underlying standardization.
Author : Yue Hao
Publisher : CRC Press
ISBN 13 : 1315351838
Total Pages : 325 pages
Book Rating : 4.3/5 (153 download)
Download or read book Nitride Wide Bandgap Semiconductor Material and Electronic Devices written by Yue Hao and published by CRC Press. This book was released on 2016-11-03 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9812773371
Total Pages : 342 pages
Book Rating : 4.8/5 (127 download)
Download or read book SiC Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2006 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices OCo power switching Schottky diodes and high temperature MESFETs OCo are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology. Contents: SiC Material Properties (G Pensl et al.); SiC Homoepitaxy and Heteroepitaxy (A S Bakin); Ohmic Contacts to SiC (F Roccaforte et al.); Silicon Carbide Schottky Barrier Diode (J H Zhao et al.); High Power SiC PiN Rectifiers (R Singh); Silicon Carbide Diodes for Microwave Applications (K Vassilevski); SiC Thyristors (M E Levinshtein et al.); Silicon Carbide Static Induction Transistors (G C DeSalvo). Readership: Technologists, scientists, engineers and graduate students working on silicon carbide or other wide band gap materials and devices."
