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Author :
Publisher :
ISBN 13 :
Total Pages : 2540 pages
Book Rating : 4.3/5 (91 download)
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Wolfgang J. Choyke
Publisher : Springer Science & Business Media
ISBN 13 : 3642188702
Total Pages : 911 pages
Book Rating : 4.6/5 (421 download)
Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Author : Tsunenobu Kimoto
Publisher : John Wiley & Sons
ISBN 13 : 1118313550
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author : Mark Prelas
Publisher : Springer
ISBN 13 : 331941724X
Total Pages : 363 pages
Book Rating : 4.3/5 (194 download)
Download or read book Nuclear Batteries and Radioisotopes written by Mark Prelas and published by Springer. This book was released on 2016-08-04 with total page 363 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains the physics of nuclear battery operation. It provides a comprehensive background that allows readers to understand all past and future developments in the field. The supply and cost of radioisotopes for use in applications (focused on nuclear batteries) are covered in the initial sections of the text. The interaction of ionizing radiation with matter is discussed as applied to nuclear batteries. The physics of interfacing the radioisotopes to the transducers which represent the energy conversion mechanism for nuclear batteries are described for possible nuclear battery configurations. Last but not least the efficiencies of nuclear battery configurations are discussed combined with a review of the literature on nuclear battery research.
Author : Zhe Chuan Feng
Publisher : Springer Science & Business Media
ISBN 13 : 9783540206668
Total Pages : 480 pages
Book Rating : 4.2/5 (66 download)
Download or read book SiC Power Materials written by Zhe Chuan Feng and published by Springer Science & Business Media. This book was released on 2004-06-09 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.
Author : B. Jayant Baliga
Publisher : Wiley-Interscience
ISBN 13 :
Total Pages : 504 pages
Book Rating : 4.3/5 (91 download)
Download or read book Modern Power Devices written by B. Jayant Baliga and published by Wiley-Interscience. This book was released on 1987-03-10 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written in a tutorial form, the text supplies in-depth the physics, design, and fabrication technology for power devices. Each chapter includes a discussion of the basic concepts of device operation and their electrical characteristics, a detailed analysis of the device physics, and the technology of fabrication. Extensive analytical solutions are used to enable the reader to obtain an understanding of the physics.
Author : Shubham Sahay
Publisher : John Wiley & Sons
ISBN 13 : 1119523532
Total Pages : 496 pages
Book Rating : 4.1/5 (195 download)
Download or read book Junctionless Field-Effect Transistors written by Shubham Sahay and published by John Wiley & Sons. This book was released on 2019-02-27 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Author : Tsunenobu Kimoto
Publisher : John Wiley & Sons
ISBN 13 : 1118313526
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1351832808
Total Pages : 1044 pages
Book Rating : 4.3/5 (518 download)
Download or read book Extreme Environment Electronics written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.
Author : Ghenadii Korotcenkov
Publisher : CRC Press
ISBN 13 : 1482264595
Total Pages : 431 pages
Book Rating : 4.4/5 (822 download)
Download or read book Porous Silicon: From Formation to Applications: Optoelectronics, Microelectronics, and Energy Technology Applications, Volume Three written by Ghenadii Korotcenkov and published by CRC Press. This book was released on 2016-01-06 with total page 431 pages. Available in PDF, EPUB and Kindle. Book excerpt: Porous silicon is rapidly attracting increasing interest from various fields, including optoelectronics, microelectronics, photonics, medicine, sensor and energy technologies, chemistry, and biosensing. This nanostructured and biodegradable material has a range of unique properties that make it ideal for many applications. This book, the third of a
Author : George Gibbs
Publisher :
ISBN 13 : 9781681176437
Total Pages : 284 pages
Book Rating : 4.1/5 (764 download)
Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Author :
Publisher :
ISBN 13 :
Total Pages : 920 pages
Book Rating : 4.F/5 ( download)
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 920 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9812703837
Total Pages : 143 pages
Book Rating : 4.8/5 (127 download)
Download or read book SiC Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2007 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization.This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices.Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.
Author :
Publisher :
ISBN 13 :
Total Pages : 500 pages
Book Rating : 4.3/5 (91 download)
Download or read book Ceramic Abstracts written by and published by . This book was released on 2000 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 1058 pages
Book Rating : 4.3/5 (91 download)
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : National Research Council
Publisher : National Academies Press
ISBN 13 : 0309176050
Total Pages : 135 pages
Book Rating : 4.3/5 (91 download)
Download or read book Materials for High-Temperature Semiconductor Devices written by National Research Council and published by National Academies Press. This book was released on 1995-09-14 with total page 135 pages. Available in PDF, EPUB and Kindle. Book excerpt: Major benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to their development and manufacture, determines the criteria for successfully packaging and integrating these devices into existing systems, and recommends future research priorities.
Author : Satoshi Koizumi
Publisher : Woodhead Publishing
ISBN 13 : 0081021844
Total Pages : 468 pages
Book Rating : 4.0/5 (81 download)
Download or read book Power Electronics Device Applications of Diamond Semiconductors written by Satoshi Koizumi and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. - Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance - Examines why diamond semiconductors could lead to superior power electronics - Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics
