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The Electrical Properties Of Gold And Tantalum Thin Films After Argon Ion Implantation
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Book Synopsis The Electrical Properties of Gold and Tantalum Thin Films After Argon Ion Implantation by : R. G. R. Robinson
Download or read book The Electrical Properties of Gold and Tantalum Thin Films After Argon Ion Implantation written by R. G. R. Robinson and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physical and Electrical Properties of Cathodic Sputtered Tantalum Thin Films by : William J. Meder
Download or read book Physical and Electrical Properties of Cathodic Sputtered Tantalum Thin Films written by William J. Meder and published by . This book was released on 1965 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on with total page 654 pages. Available in PDF, EPUB and Kindle. Book excerpt: NSA is a comprehensive collection of international nuclear science and technology literature for the period 1948 through 1976, pre-dating the prestigious INIS database, which began in 1970. NSA existed as a printed product (Volumes 1-33) initially, created by DOE's predecessor, the U.S. Atomic Energy Commission (AEC). NSA includes citations to scientific and technical reports from the AEC, the U.S. Energy Research and Development Administration and its contractors, plus other agencies and international organizations, universities, and industrial and research organizations. References to books, conference proceedings, papers, patents, dissertations, engineering drawings, and journal articles from worldwide sources are also included. Abstracts and full text are provided if available.
Book Synopsis Tantalum Thin Films by : William Dickson Westwood
Download or read book Tantalum Thin Films written by William Dickson Westwood and published by . This book was released on 1975 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The BRITS Index: Subject index by : British Theses Service
Download or read book The BRITS Index: Subject index written by British Theses Service and published by . This book was released on 1989 with total page 1156 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Tantalum Oxide Thin Films for Microelectronic Applications by : Fang-Xing Jiang
Download or read book Tantalum Oxide Thin Films for Microelectronic Applications written by Fang-Xing Jiang and published by . This book was released on 1995 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: "There is a critical demand for new dielectric films having higher dielectric constants, higher dielectric strengths and lower leakage currents for applications such as charge storage capacitors for DRAMs in ULSI and low-inductance decoupling capacitors for the control of simultaneous switching noise (SSN) in high-speed switching ULSI chips. Among these candidates for insulators, tantalum pentoxide has received considerable attention. As earlier as in the 1960's, tantalum oxide has been used as the dielectric in discrete capacitors. Recently, several papers have been reported on the electrical properties of Ta205 films grown by various techniques. It has been reported that the electrical properties, e.g. dielectric constant, leakage current, dielectric strength as well as the nature of the Ta2Os/Si interface, are extremely sensitive to the annealing conditions. At the present time, however, the role of the as-deposited Ta2Os/Si interface is not fully understood. In the present study, a two-step process, consisting two separate depositions and annealing, has been developed to improve the physical and electrical characteristics of reactivity sputtered Ta2Os films. The reactive ion etching (RE) selectivity of Ta2Os to Si, Si02 and Ta in CHF3, CF4 and SF6 with fractions of 02, H2 and Ar has been investigated for IC process applications. The tantalum oxide films were deposited on Si wafers by reactive DC sputtering. The films were characterized for thickness and refractive index using an ellipsometer and their phase was identified using an X-ray diffractometer. The annealing effect on Ta2Oj in oxygen ambient at 800C shows that the Ta205 films crystallize into an orthorhombic phase, condensed with a decrease of thickness and an increase of refractive index. Various capacitor configurations, such as MTM (Al/Ta205/Al) and MIS (Al/Ta20$/p-Si, Al/Ta205/n-Si and Al/Ta2Os/n+-Si), were fabricated to study the nature of Ta2Os/Si interface and the I-V and C-V characteristics. The as-deposited Ta2Os film on p-type Si substrate can sustain an electric field of 3 MV/cm at a current density of 1 u.A/cm2 in the accumulation mode, which is an order higher than that on n-type substrate. The value of apparent dielectric constant of as-deposited Ta2Os film estimated from the Al/Ta205/Al capacitor is 16, however, the value varies from 6 to 10 in MIS capacitors. This shows a evidence strongly that there is a substrate sensitivity for tantalum oxide films. As a result of the two-step process, the dielectric constant of Al/Ta2Os/n+-Si capacitor increases to 21. This value is considerably close to 24 for bulk Ta2Oj. To investigate the RIE selectivity of Ta2Os to Ta, Si and Si02, the Ta2Os film was deposited onto a wafer with three other films, DC sputtered Ta, LPCVD polysilicon, and thermally grown Si02. It is revealed that in SF6 with various fractions of 20% hydrogen or argon, the Ta2Os film shows extremely low etch rate as compared with Si, Ta and Si02, and in CF4 with various fractions of 30% hydrogen or oxygen, the Ta205 film shows a lower etch rate. However, in CHF3 the etch rates of Si and Ta2Os are comparable. The absorption spectrum of deposited tantalum oxide films was also measured. This material can be used for phase shift and attenuation masks, sunglasses and light filters. The as-deposited tantalum oxide films show a high absorbency peak at 217 nm and an additional small peak. at 416 nm with two subpeaks at 286 and 510 nm using spectrophotometer. The high peak becomes broadened and the long wavelength side of the small peak is shifted to short wavelength through annealing. A model of free volume like defect and oxygen vacancy like defect is proposed to explain the change of the absorbency spectrum."--Abstract.
Book Synopsis The Effects of Annealing Temperature and Deposition Parameters on the Mechanical and Electrical Properties of Tantalum Oxide Thin Films by : Jaya Murli Purswani
Download or read book The Effects of Annealing Temperature and Deposition Parameters on the Mechanical and Electrical Properties of Tantalum Oxide Thin Films written by Jaya Murli Purswani and published by . This book was released on 2004 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Tantalum Nitride and Tantalum Lanthanum Nitride by : Brian E. Coss
Download or read book Tantalum Nitride and Tantalum Lanthanum Nitride written by Brian E. Coss and published by . This book was released on 2008 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ion-solid Interactions: Author-title index by : Walter M. Gibson
Download or read book Ion-solid Interactions: Author-title index written by Walter M. Gibson and published by . This book was released on 1980 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 892 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Structural and Electrical Properties of Thin Films Sputtered from a Platinum Cathode in Argon-oxygen Mixtures by : Carl David Bennewitz
Download or read book The Structural and Electrical Properties of Thin Films Sputtered from a Platinum Cathode in Argon-oxygen Mixtures written by Carl David Bennewitz and published by . This book was released on 1974 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical Properties of Tin Oxide Thin Films by : John Terence Jacobs
Download or read book Electrical Properties of Tin Oxide Thin Films written by John Terence Jacobs and published by . This book was released on 1964 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Bell Telephone Laboratories, inc. Technical Information Libraries Publisher : ISBN 13 : Total Pages :986 pages Book Rating :4.:/5 (31 download)
Book Synopsis BTL Talks and Papers by : Bell Telephone Laboratories, inc. Technical Information Libraries
Download or read book BTL Talks and Papers written by Bell Telephone Laboratories, inc. Technical Information Libraries and published by . This book was released on 1977 with total page 986 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Bell Telephone Laboratories. Libraries and Information Systems Center Publisher : ISBN 13 : Total Pages :582 pages Book Rating :4.3/5 (91 download)
Book Synopsis Bell Laboratories Talks and Papers by : Bell Telephone Laboratories. Libraries and Information Systems Center
Download or read book Bell Laboratories Talks and Papers written by Bell Telephone Laboratories. Libraries and Information Systems Center and published by . This book was released on 1981 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1992 with total page 820 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metals Abstracts written by and published by . This book was released on 1992 with total page 1516 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metal Finishing Abstracts written by and published by . This book was released on 1977 with total page 812 pages. Available in PDF, EPUB and Kindle. Book excerpt: