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The Effect Of Nitrogen Plasma Species On The Growth Morphology And Mechanism Of Gan Nanocolumns Deposited By Plasma Assisted Molecular Beam Epitaxy
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Book Synopsis The Effect of Nitrogen Plasma Species on the Growth Morphology and Mechanism of GaN Nanocolumns Deposited by Plasma-assisted Molecular-beam Epitaxy by : Ananya Debnath
Download or read book The Effect of Nitrogen Plasma Species on the Growth Morphology and Mechanism of GaN Nanocolumns Deposited by Plasma-assisted Molecular-beam Epitaxy written by Ananya Debnath and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation addresses GaN nanocolumns (NCs) growth on Si (111) via a SixNy intermediate layer by radio-frequency molecular-beam epitaxy. In the existing literature, the GaN NC’s morphology was shown to be influenced by growth parameters such as Ga flux, substrate type, growth temperature, buffer layer types, sticking coefficient of Ga adatoms in different planes, etc. The one aspect that so far has been understudied is the role of the plasma-generated species. Due to the multiple states and concentrations of the available excited species in a nitrogen plasma, it has been difficult to quantify and correlate their role with the morphology of the resulting NCs. To address this issue, the nitrogen plasma source has been investigated by optical emission spectroscopy, in order to quantify the relative abundances of the molecular and atomic nitrogen species, and then to examine the effect of these species on the growth morphology and mechanism of GaN NCs grown on Si (111). The length, diameter, and density of NCs were analyzed as a function of the nitrogen species Cmol/Cat concentration ratio during epitaxy. Growth rate and diameter are found to increase and density to decrease up to a certain value of Cmol/Cat nitrogen ratio but plateaued beyond that. The effect of the Cmol/Cat nitrogen ratio seems to be an additional factor that has to be taken into account in the modeling of GaN NC growth. The structural and optical characterization of GaN NCs by PL, XRD, and RHEED show that GaN NC samples are strained. This strain decreases with increasing Cmol/Cat ratio. The growth mechanism of the GaN NCs was investigated in terms of Cmol/Cat ratio using the SEM and TEM results. Under our growth conditions, the NC growth appeared to be driven by direct impingement of adatoms rather than diffusion. The NCs have a core shell structure where the difference in growth rate of shell and core diminishes as Cmol/Cat ratio increases, which results in NCs with different radial growth rates.
Book Synopsis GaN Growth by RF-plasma Assisted Molecular Beam Epitaxy by : Brenda VanMil
Download or read book GaN Growth by RF-plasma Assisted Molecular Beam Epitaxy written by Brenda VanMil and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Structure, Morphology and Kinetics of GaN Film Growth Using Gas-source and RF Plasma-assisted Metal-organic Molecular Beam Epitaxy by : Arthur Randall Woll
Download or read book Structure, Morphology and Kinetics of GaN Film Growth Using Gas-source and RF Plasma-assisted Metal-organic Molecular Beam Epitaxy written by Arthur Randall Woll and published by . This book was released on 2000 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis MBE Growth and Properties of GaN, InGaN and GaN/InGaN Quantum Well Structures for Laser Diode Applications by :
Download or read book MBE Growth and Properties of GaN, InGaN and GaN/InGaN Quantum Well Structures for Laser Diode Applications written by and published by . This book was released on 2001 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The program topic was changed to growth of III-V nitrides by MBE by mutual agreement with J. Zavada of ARO. Growth of III-V nitrides by molecular beam epitaxy (NIBE) has been studied using rf nitrogen plasma sources. Plasma sources from three different vendors have been tested. All three of the sources have been used to grow high quality GaN. However, the EPI rf source produces an optical emission spectrum that is very rich in the active nitrogen species of 1st-Positive excited nitrogen molecules and nitrogen atoms. GaN growth rates at 800 deg C of 1 micrometer/hr have been achieved using this source. The MBE-grown GaN films are deposited homoepitaxially on high quality MOVPE-grown GaN/SiC substrates. With the growth conditions for high quality undoped GaN as a baseline, a detailed study of Mg doping for p-type GaN was performed. An acceptor incorporation of 2x1019 cm-3 was measured by both CV and SIMS for a doping source temperature of 290 deg C. However, a faceted 3-dimensional growth mode was observed by RHEED during Mg doping of GaN. Additional studies suggest an interdependence between Mg incorporation and growth surface morphology. Quantum well structures made from the inGaN ternary alloy were grown using a modulated beam MBE method. With this technique, quantum well compositions were controllable grown with visible luminescence ranging from 4OOnm to 515nm depending on indium mole fraction. Light emitting diode test structures, combin in g Mg p-type doping with InGaN quantum wells, were fabricated and tested.
Book Synopsis Growth of (Ga, In)(N, As) Nanostructures Using Plasma-assisted Molecular Beam Epitaxy by : William M. McGee
Download or read book Growth of (Ga, In)(N, As) Nanostructures Using Plasma-assisted Molecular Beam Epitaxy written by William M. McGee and published by . This book was released on 2007 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of (Ga, In)(N, As) Nanostructures Using Plasma-assisted Molecular Beam Epitaxy by :
Download or read book Growth of (Ga, In)(N, As) Nanostructures Using Plasma-assisted Molecular Beam Epitaxy written by and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of GaN Grown on Silicon by Plasma-Assisted Molecular Beam Epitaxy by : 李品頤
Download or read book Growth and Characterization of GaN Grown on Silicon by Plasma-Assisted Molecular Beam Epitaxy written by 李品頤 and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Plasma-Assisted Molecular-Beam-Epitaxy Growth and Cathodoluminescence Study of GaN/AlN Distributed-Bragg-Reflector Nanorod Structure by : 何承穎
Download or read book Plasma-Assisted Molecular-Beam-Epitaxy Growth and Cathodoluminescence Study of GaN/AlN Distributed-Bragg-Reflector Nanorod Structure written by 何承穎 and published by . This book was released on 2008 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of GaN Nanorods Grown on Si(111) Substrate by Plasma-assisted Molecular Beam Epitaxy by :
Download or read book Growth and Characterization of GaN Nanorods Grown on Si(111) Substrate by Plasma-assisted Molecular Beam Epitaxy written by and published by . This book was released on 2004 with total page 169 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Evaluation of GaN on Si(111) Substrates Using Electron Cyclotron Resonance Plasma-assisted Molecular Beam Epitaxy by : Akira Ohtani
Download or read book Growth and Evaluation of GaN on Si(111) Substrates Using Electron Cyclotron Resonance Plasma-assisted Molecular Beam Epitaxy written by Akira Ohtani and published by . This book was released on 1999 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of Non-polar and Semi-polar GaN with Plasma Assisted Molecular Beam Epitaxy by : Melvin Barker McLaurin
Download or read book Growth of Non-polar and Semi-polar GaN with Plasma Assisted Molecular Beam Epitaxy written by Melvin Barker McLaurin and published by . This book was released on 2007 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Finally, we propose a possible source of anisotropic mobilities and enhanced p-type conduction in faulted films is proposed. Basal plane stacking faults are treated as heterostructures of the wurtzite and zincblende polytypes of GaN. The band parameter and polarization differences between the polytypes result in large offsets in both the conduction and valence band edges at the stacking faults. Anisotropy results from scattering from the band-edge offsets and enhanced mobility from screening due to charge accumulation at these band edge offsets.
Book Synopsis Gas-source Molecular Beam Epitaxy Growth of GaN with a Nitrogen Radical Beam and Ammonia by : William Sam Wong
Download or read book Gas-source Molecular Beam Epitaxy Growth of GaN with a Nitrogen Radical Beam and Ammonia written by William Sam Wong and published by . This book was released on 1995 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Morphology of Er-Doped GaN on Sapphire and Hydride Vapor Phase Epitaxy Substrates by :
Download or read book Growth and Morphology of Er-Doped GaN on Sapphire and Hydride Vapor Phase Epitaxy Substrates written by and published by . This book was released on 1999 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: We report the morphological and compositional characteristics and their effect on optical properties of Er-doped GaN grown by solid source molecular beam epitaxy on sapphire and hydride vapor phase epitaxy GaN substrates. The GaN was grown by molecular beam epitaxy on sapphire substrates using solid sources (for Ga, Al, and Er) and a plasma gas source for N2. The emission spectrum of the GaN:Er films consists of two unique narrow green lines at 537 and 558 nm along with typical Er31 emission in the infrared at 1.5 micrometers. The narrow lines have been identified as Er31 transitions from the 2H(sub 11/2) and 4S(sub 3/2) levels to the 4I(sub 15/2) ground state. The morphology of the GaN:Er films showed that the growth resulted in either a columnar or more compact structure with no effect on green light emission intensity.
Book Synopsis Accords-Puncten, welche zwischen Ihro Majest. zu Schweden Reichs-Raht und Admirals auch Lieut-Generals Herrn Carl Gustaph Wrangels Hochgräfl. Exell. eines Theils, und dem Herrn Gouvernatorn Christoffer Bille zu Mehlgardt ... andern Theils den 6. September 1658 wegen Ubergabe der Vestung Cronenburg an Ihr. Königl. Majest. zu Schweden verglichen und geschlossen by :
Download or read book Accords-Puncten, welche zwischen Ihro Majest. zu Schweden Reichs-Raht und Admirals auch Lieut-Generals Herrn Carl Gustaph Wrangels Hochgräfl. Exell. eines Theils, und dem Herrn Gouvernatorn Christoffer Bille zu Mehlgardt ... andern Theils den 6. September 1658 wegen Ubergabe der Vestung Cronenburg an Ihr. Königl. Majest. zu Schweden verglichen und geschlossen written by and published by . This book was released on 1658 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of GaN-based Thin Film Grown by Plasma-assisted Molecular Beam Epitaxy for Spintronics and Optoelectronics Application by :
Download or read book Growth and Characterization of GaN-based Thin Film Grown by Plasma-assisted Molecular Beam Epitaxy for Spintronics and Optoelectronics Application written by and published by . This book was released on 2013 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Performance Enhancement of GaN-based High-power Hemts by Selective-area Growth Using Plasma-assisted Molecular Beam Epitaxy by : Liang Pang
Download or read book Performance Enhancement of GaN-based High-power Hemts by Selective-area Growth Using Plasma-assisted Molecular Beam Epitaxy written by Liang Pang and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of GaN Thin Film and AlGaN-based Quantum Well Structure by Plasma-assisted Molecular Beam Epitaxy for Optoelectronics Application by : 碩廷·尤
Download or read book Growth of GaN Thin Film and AlGaN-based Quantum Well Structure by Plasma-assisted Molecular Beam Epitaxy for Optoelectronics Application written by 碩廷·尤 and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
