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Author :
Publisher :
ISBN 13 : 9789175199504
Total Pages : 33 pages
Book Rating : 4.1/5 (995 download)
Download or read book The Effect of Mg Doping on Optical and Structural Properties of GaN written by and published by . This book was released on 2012 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Sergey Khromov
Publisher :
ISBN 13 : 9789175194837
Total Pages : 71 pages
Book Rating : 4.1/5 (948 download)
Download or read book Doping Effects on the Structural and Optical Properties of GaN. written by Sergey Khromov and published by . This book was released on 2013 with total page 71 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : C. R. Abernathy
Publisher : The Electrochemical Society
ISBN 13 : 9781566771870
Total Pages : 310 pages
Book Rating : 4.7/5 (718 download)
Download or read book Proceedings of the Second Symposium on III-V Nitride Materials and Processes written by C. R. Abernathy and published by The Electrochemical Society. This book was released on 1998 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Wengang (Wayne) Bi
Publisher : CRC Press
ISBN 13 : 1498747140
Total Pages : 709 pages
Book Rating : 4.4/5 (987 download)
Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 709 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Author : M.O. Manasreh
Publisher : Elsevier
ISBN 13 : 0080534449
Total Pages : 463 pages
Book Rating : 4.0/5 (85 download)
Download or read book III-Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Author :
Publisher :
ISBN 13 :
Total Pages : 2002 pages
Book Rating : 4.3/5 (91 download)
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Robert Herrick
Publisher : Woodhead Publishing
ISBN 13 : 0128192550
Total Pages : 334 pages
Book Rating : 4.1/5 (281 download)
Download or read book Reliability of Semiconductor Lasers and Optoelectronic Devices written by Robert Herrick and published by Woodhead Publishing. This book was released on 2021-03-06 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reliability of Semiconductor Lasers and Optoelectronic Devices simplifies complex concepts of optoelectronics reliability with approachable introductory chapters and a focus on real-world applications. This book provides a brief look at the fundamentals of laser diodes, introduces reliability qualification, and then presents real-world case studies discussing the principles of reliability and what occurs when these rules are broken. Then this book comprehensively looks at optoelectronics devices and the defects that cause premature failure in them and how to control those defects. Key materials and devices are reviewed including silicon photonics, vertical-cavity surface-emitting lasers (VCSELs), InGaN LEDs and lasers, and AlGaN LEDs, covering the majority of optoelectronic devices that we use in our everyday lives, powering the Internet, telecommunication, solid-state lighting, illuminators, and many other applications. This book features contributions from experts in industry and academia working in these areas and includes numerous practical examples and case studies. This book is suitable for new entrants to the field of optoelectronics working in R&D. • Includes case studies and numerous examples showing best practices and common mistakes affecting optoelectronics reliability written by experts working in the industry • Features the first wide-ranging and comprehensive overview of fiber optics reliability engineering, covering all elements of the practice from building a reliability laboratory, qualifying new products, to improving reliability on mature products. • Provides a look at the reliability issues and failure mechanisms for silicon photonics, VCSELs, InGaN LEDs and lasers, AIGaN LEDs, and more.
Author : James A. Shook
Publisher :
ISBN 13 :
Total Pages : 266 pages
Book Rating : 4.:/5 (18 download)
Download or read book First Principles Study on the Effects of Vacancies and Mg Doping on the Physical Properties of CuAlO2, AgAlO2, CuCrO2, and AgCrO2 Transparent Conductor Oxides written by James A. Shook and published by . This book was released on 2018 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: The need for well understood, commercially available p-type transparent conducting oxides for incorporation into basic transparent semiconducting devices alongside their already well understood and available n-type counterparts for application in technologies such as solar cells and capacitive touchscreens motivates this first principles study on the effects of Cu and O vacancies and Mg doping on the intrinsically poor p-type character of CuAlO2, AgAlO2, CuCrO2, and AgCrO2. Density functional theory based calculations using the projector augmented-wave functions along with the generalized gradient approximation to the exchange and correlation energy as implemented by the Vienna Ab Initio Simulation Package are used to study the total crystal energy of the three known polymorphs of CuAlO2 and AgAlO2 in order to determine the most stable polymorph in the ground state. Additionally, three simple magnetic configurations are considered for CuCrO2 and AgCrO2 in the context of total energy of the ground state for the purpose of choosing a specific polymorph and magnetic configuration to be the framework within which the doped and defect systems will be studied. Different functional approaches to the exchange and correlation energies are also considered in order to accurately reproduce the structural properties and the band gap. The 2H delafossite polymorph is determined to be one of the most stable polymorphs and is the focus of this work as it is the least studied of the delafossites. The simple antiferromagnetic configuration is chosen to model magnetic effects in CuCrO2 and AgCrO2 due to it having one of the lowest ground state total energies and also containing the most semiconductor like behavior of the magnetic configurations considered. A 2x2x2 supercell scheme is employed to model 6.25% Cu and Ag vacancies, 3.13% O vacancies, and 6.25% Mg-doping replacing Al and Cr, from which structural properties, electronic properties, hole effective masses, and optical properties are obtained and compared to the pristine crystal in order to offer predictions on the effectiveness of the mentioned native defects and dopant on increasing the conductivity and maintaining transparency in all transparent conducting oxides studied in this work. Comparisons between the results obtained in this work and previous experimental and other theoretical results are made, when available. Many of the properties predicted here are immediately testable via experimentation.
Author : Alberto Palmero
Publisher : MDPI
ISBN 13 : 3039364294
Total Pages : 148 pages
Book Rating : 4.0/5 (393 download)
Download or read book Advanced Strategies in Thin Film Engineering by Magnetron Sputtering written by Alberto Palmero and published by MDPI. This book was released on 2020-12-10 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent years have witnessed the flourishing of numerous novel strategies based on the magnetron sputtering technique aimed at the advanced engineering of thin films, such as HiPIMS, combined vacuum processes, the implementation of complex precursor gases or the inclusion of particle guns in the reactor, among others. At the forefront of these approaches, investigations focused on nanostructured coatings appear today as one of the priorities in many scientific and technological communities: The science behind them appears in most of the cases as a "terra incognita", fascinating both the fundamentalist, who imagines new concepts, and the experimenter, who is able to create and study new films with as of yet unprecedented performances. These scientific and technological challenges, along with the existence of numerous scientific issues that have yet to be clarified in classical magnetron sputtering depositions (e.g., process control and stability, nanostructuration mechanisms, connection between film morphology and properties or upscaling procedures from the laboratory to industrial scales) have motivated us to edit a specialized volume containing the state-of-the art that put together these innovative fundamental and applied research topics. These include, but are not limited to: • Nanostructure-related properties; • Atomistic processes during film growth; • Process control, process stability, and in situ diagnostics; • Fundamentals and applications of HiPIMS; • Thin film nanostructuration phenomena; • Tribological, anticorrosion, and mechanical properties; • Combined procedures based on the magnetron sputtering technique; • Industrial applications; • Devices.
Author :
Publisher : Academic Press
ISBN 13 : 0080864554
Total Pages : 509 pages
Book Rating : 4.0/5 (88 download)
Download or read book Gallium-Nitride (GaN) II written by and published by Academic Press. This book was released on 1998-10-22 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Author : C.G. Van de Walle
Publisher : Elsevier
ISBN 13 : 0444599177
Total Pages : 635 pages
Book Rating : 4.4/5 (445 download)
Download or read book Wide-band-gap Semiconductors written by C.G. Van de Walle and published by Elsevier. This book was released on 2012-12-02 with total page 635 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide-band-gap semiconductors have been a research topic for many decades. However, it is only in recent years that the promise for technological applications came to be realized; simultaneously an upsurge of experimental and theoretical activity in the field has been witnessed. Semiconductors with wide band gaps exhibit unique electronic and optical properties. Their low intrinsic carrier concentrations and high breakdown voltage allow high-temperature and high-power applications (diamond, SiC etc.). The short wavelength of band-to-band transitions allows emission in the green, blue, or even UV region of the spectrum (ZnSe, GaN, etc.). In addition, many of these materials have favorable mechanical and thermal characteristics. These proceedings reflect the exciting progress made in this field. Successful p-type doping of ZnSe has recently led to the fabrication of blue-green injection lasers in ZnSe; applications of short-wavelength light-emitting devices range from color displays to optical storage. In SiC, advances in growth techniques for bulk as well as epitaxial material have made the commercial production of high-temperature and high-frequency devices possible. For GaN, refinement of growth procedures and new ways of obtaining doped material have resulted in blue-light-emitting diodes and opened the road to the development of laser diodes. Finally, while the quality of artificial diamond is not yet high enough for electronic applications, the promise it holds in terms of unique material properties is encouraging intense activity in the field. This volume contains contributions from recognized experts presently working on different material systems in the field. The papers cover the theoretical, experimental and application-oriented aspects of this exciting topic.
Author : Zhe Chuan Feng
Publisher : CRC Press
ISBN 13 : 1351647644
Total Pages : 968 pages
Book Rating : 4.3/5 (516 download)
Download or read book Handbook of Solid-State Lighting and LEDs written by Zhe Chuan Feng and published by CRC Press. This book was released on 2017-06-12 with total page 968 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook addresses the development of energy-efficient, environmentally friendly solid-state light sources, in particular semiconductor light emitting diodes (LEDs) and other solid-state lighting devices. It reflects the vast growth of this field and impacts in diverse industries, from lighting to communications, biotechnology, imaging, and medicine. The chapters include coverage of nanoscale processing, fabrication of LEDs, light diodes, photodetectors and nanodevices, characterization techniques, application, and recent advances. Readers will obtain an understanding of the key properties of solid-state lighting and LED devices, an overview of current technologies, and appreciation for the challenges remaining. The handbook will be useful to material growers and evaluators, device design and processing engineers, newcomers, students, and professionals in the field.
Author : Otfried Madelung
Publisher : Springer Science & Business Media
ISBN 13 : 3642188656
Total Pages : 705 pages
Book Rating : 4.6/5 (421 download)
Download or read book Semiconductors written by Otfried Madelung and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 705 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Data Handbook is a updated and largely extended new edition of the book "Semiconductors: Basic Data". The data of the former edition have been updated and a complete representation of all relevant basic data is now given for all known groups of semiconducting materials.
Author : M S Ramachandra Rao
Publisher : Springer Science & Business Media
ISBN 13 : 813221160X
Total Pages : 377 pages
Book Rating : 4.1/5 (322 download)
Download or read book ZnO Nanocrystals and Allied Materials written by M S Ramachandra Rao and published by Springer Science & Business Media. This book was released on 2013-09-12 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: ZnO has been the central theme of research in the past decade due to its various applications in band gap engineering, and textile and biomedical industries. In nanostructured form, it offers ample opportunities to realize tunable optical and optoelectronic properties and it was also termed as a potential material to realize room temperature ferromagnetism. This book presents 17 high-quality contributory chapters on ZnO related systems written by experts in this field. These chapters will help researchers to understand and explore the varied physical properties to envisage device applications of ZnO in thin film, heterostructure and nanostructure forms.
Author : Mathias Forsberg
Publisher : Linköping University Electronic Press
ISBN 13 : 9175191415
Total Pages : 62 pages
Book Rating : 4.1/5 (751 download)
Download or read book Optical and Structural Characterization of GaN Based Hybrid Structures and Nanorods written by Mathias Forsberg and published by Linköping University Electronic Press. This book was released on 2015-01-29 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN belongs to the group III nitrides and is today the material of choice for efficient blue light emission, enabling solid state white lighting by combining red, blue and green light emitting diodes (LED) or by having a blue LED illuminating a phosphor. By combining GaN quantum well (QW) structures with colloids, nanoparticles or polyfluorene films, LEDs may be fabricate at lower cost. Such hybrid structures are promising for future micro-light sources in full-color displays, sensors and imaging systems. In this work, hybrid structures based on an MOCVD grown GaN QW sandwiched between two layers of AlGaN have been studied. On top of the structure, colloidal ZnO nano-crystals were deposited by spin-coating. Time-resolved photoluminescence was used to investigate the QW exciton dynamics in these hybrids depending on the cap layer thickness. From comparison of the recombination rate in the bare QW structure and the hybrid, the efficiency of the non-radiative resonant energy transfer between the QW and the nano-crystals could be obtained. Bulk GaN of large area is difficult to synthesize. Thus, due to lack of native substrates, GaN-based structures are grown on SiC or sapphire, which results in high threading dislocation density in the active layer of the device. Fabricating GaN nanorods (NR) can be a way to produce GaN with lower defect density since threading dislocations are annihilated toward the NR wall during growth. Here, GaN(0001) NRs grown on Si(111) substrates by magnetron sputter epitaxy using a liquid Ga target have been investigated. Sputter deposition has the advantage of being easy to scale up for depositions on large surfaces. It is also possible to deposit at lower temperatures, which allows the use of substrates with lower decomposition temperature. In the second paper of this thesis, optical and structural properties of sputtered GaN NRs have been studied.
Author : Jan Stehr
Publisher : Woodhead Publishing
ISBN 13 : 0081020546
Total Pages : 309 pages
Book Rating : 4.0/5 (81 download)
Download or read book Defects in Advanced Electronic Materials and Novel Low Dimensional Structures written by Jan Stehr and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in Advanced Electronic Materials and Novel Low Dimensional Structures provides a comprehensive review on the recent progress in solving defect issues and deliberate defect engineering in novel material systems. It begins with an overview of point defects in ZnO and group-III nitrides, including irradiation-induced defects, and then look at defects in one and two-dimensional materials, including carbon nanotubes and graphene. Next, it examines the ways that defects can expand the potential applications of semiconductors, such as energy upconversion and quantum processing. The book concludes with a look at the latest advances in theory. While defect physics is extensively reviewed for conventional bulk semiconductors, the same is far from being true for novel material systems, such as low-dimensional 1D and 0D nanostructures and 2D monolayers. This book fills that necessary gap. Presents an in-depth overview of both conventional bulk semiconductors and low-dimensional, novel material systems, such as 1D structures and 2D monolayers Addresses a range of defects in a variety of systems, providing a comparative approach Includes sections on advances in theory that provide insights on where this body of research might lead
Author : Stephen J. Pearton
Publisher : CRC Press
ISBN 13 : 1000448428
Total Pages : 556 pages
Book Rating : 4.0/5 (4 download)
Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 2021-10-08 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
