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Temperature Dependence Of Conductivity And Mobility Of Gb S And A Sic For Temperature Sensors
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Book Synopsis Temperature Dependence of Conductivity and Mobility of −gb−s- and A-Sic for Temperature Sensors by : Nayef Muhammed Abu-Ageel
Download or read book Temperature Dependence of Conductivity and Mobility of −gb−s- and A-Sic for Temperature Sensors written by Nayef Muhammed Abu-Ageel and published by . This book was released on 1996 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the IRE. by : Institute of Radio Engineers
Download or read book Proceedings of the IRE. written by Institute of Radio Engineers and published by . This book was released on 1962 with total page 1206 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Book Synopsis An Introduction To The Theory Of Superfluidity by : Isaac M. Khalatnikov
Download or read book An Introduction To The Theory Of Superfluidity written by Isaac M. Khalatnikov and published by CRC Press. This book was released on 2018-03-05 with total page 163 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers main properties of the excitation spectrum in superfluid 4He and the thermodynamics determined by the spectrum. It deals with hydrodynamics and describes that quantitative results should be insignificantly modified with processes of phonon decay taken into account.
Download or read book Science Abstracts written by and published by . This book was released on 1963 with total page 1758 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide Ceramics—1 by : S. Somiya
Download or read book Silicon Carbide Ceramics—1 written by S. Somiya and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discovered by Edward G. Acheson about 1890, silicon carbide is one of the oldest materials and also a new material. It occurs naturally in meteorites, but in very small amounts and is not in a useable state as an industrial material. For industrial require ments, large amounts of silicon carbide must be synthesized by solid state reactions at high temperatures. Silicon carbide has been used for grinding and as an abrasive material since its discovery. During World War II, silicon carbide was used as a heating element; however, it was difficult to obtain high density sintered silicon carbide bodies. In 1974, S. Prochazka reported that the addition of small amounts of boron compounds and carbide were effective in the sintering process to obtain high density. It was then possible to produce high density sintered bodies by pressureless sintering methods in ordinary atmosphere. Since this development, silicon carbide has received great attention as one of the high temperature structural ceramic materials. Since the 1970s, many research papers have appeared which report studies of silicon carbide and silicon nitride for structural ceramics.
Book Synopsis Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards by :
Download or read book Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards written by and published by . This book was released on 2005 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physics and Technology of Silicon Carbide Devices by : George Gibbs
Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Book Synopsis Fundamentals of Semiconductors by : Peter YU
Download or read book Fundamentals of Semiconductors written by Peter YU and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 651 pages. Available in PDF, EPUB and Kindle. Book excerpt: Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.
Book Synopsis Silicon Carbide Power Devices by : B. Jayant Baliga
Download or read book Silicon Carbide Power Devices written by B. Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.
Download or read book Semiconductors written by and published by . This book was released on 2001-07 with total page 774 pages. Available in PDF, EPUB and Kindle. Book excerpt: English translation of Fizika i tekhnika poluprovodnikov; covers semiconductor research in countries of the Former Soviet Union. Topics include semiconductor theory, transport phenomena in semiconductors, optics, magneto-optics, and electro-optics of semiconductors, semiconductor lasers, and semiconductor surface physics. Includes book reviews.
Book Synopsis Temperature Measurement by : L. Michalski
Download or read book Temperature Measurement written by L. Michalski and published by John Wiley & Sons. This book was released on 2001-12-21 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Die exakte Temperaturmessung ist ein wichtiger Parameter in vielen Bereichen. Dieser Band wurde komplett überarbeitet und aktualisiert und enthält darüber hinaus die neuesten IEC Standards. Theorie und instrumentelle Praxis der Temperaturbestimmung werden hier umfassend behandelt. (09/00)
Book Synopsis Handbook of Transparent Conductors by : David S. Ginley
Download or read book Handbook of Transparent Conductors written by David S. Ginley and published by Springer Science & Business Media. This book was released on 2010-09-11 with total page 537 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent conducting materials are key elements in a wide variety of current technologies including flat panel displays, photovoltaics, organic, low-e windows and electrochromics. The needs for new and improved materials is pressing, because the existing materials do not have the performance levels to meet the ever- increasing demand, and because some of the current materials used may not be viable in the future. In addition, the field of transparent conductors has gone through dramatic changes in the last 5-7 years with new materials being identified, new applications and new people in the field. “Handbook of Transparent Conductors” presents transparent conductors in a historical perspective, provides current applications as well as insights into the future of the devices. It is a comprehensive reference, and represents the most current resource on the subject.
Book Synopsis Analysis and Simulation of Semiconductor Devices by : S. Selberherr
Download or read book Analysis and Simulation of Semiconductor Devices written by S. Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
Book Synopsis Properties of Advanced Semiconductor Materials by : Michael E. Levinshtein
Download or read book Properties of Advanced Semiconductor Materials written by Michael E. Levinshtein and published by John Wiley & Sons. This book was released on 2001-02-21 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.
Book Synopsis Advances in Silicon Carbide Processing and Applications by : Stephen E. Saddow
Download or read book Advances in Silicon Carbide Processing and Applications written by Stephen E. Saddow and published by Artech House. This book was released on 2004 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.
Book Synopsis Monte Carlo Simulation of Semiconductor Devices by : C. Moglestue
Download or read book Monte Carlo Simulation of Semiconductor Devices written by C. Moglestue and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 343 pages. Available in PDF, EPUB and Kindle. Book excerpt: Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indi vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.
