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Author : Aleksandr Fedorovich Burenkov
Publisher : Routledge
ISBN 13 :
Total Pages : 480 pages
Book Rating : 4.3/5 (91 download)
Download or read book Tables of Ion Implantation Spatial Distributions written by Aleksandr Fedorovich Burenkov and published by Routledge. This book was released on 1986 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : S. Coffa
Publisher : Newnes
ISBN 13 : 044459972X
Total Pages : 1031 pages
Book Rating : 4.4/5 (445 download)
Download or read book Ion Implantation Technology - 94 written by S. Coffa and published by Newnes. This book was released on 1995-05-16 with total page 1031 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
Author : H. Ryssel
Publisher : Springer Science & Business Media
ISBN 13 : 3642687792
Total Pages : 377 pages
Book Rating : 4.6/5 (426 download)
Download or read book Ion Implantation Techniques written by H. Ryssel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, ion implantation has developed into the major doping technique for integrated circuits. Several series of conferences have dealt with the application of ion implantation to semiconductors and other materials (Thousand Oaks 1970, Garmisch-Partenkirchen 1971, Osaka 1974, Warwick 1975, Boulder 1976, Budapest 1978, and Albany 1980). Another series of conferences was devoted more to implantation equipment and tech niques (Salford 1977, Trento 1978, and Kingston 1980). In connection with the Third International Conference on Ion Implantation: Equipment and Tech niques, held at Queen's University, ' Kingston, Ontario, Canada, July 8-11, 1980, a two-day instructional program was organized parallel to an implan tation conference for the first time. This implantation school concentra ted on aspects of implantation-equipment design. This book contains all lectures presented at the International Ion Implantation School organized in connection with the Fourth International Conference on Ion Implantation: Equipment and Techniques, held at the Convention Center, Berchtesgaden, Germany, September 13-17, 1982. In con trast to the first .school, the main emphasis in thiS school was placed on practical aspects of implanter operation and application. In three chap ters, various machine aspects of ion implantation (general concepts, ion sources, safety, calibration, dOSimetry), range distributions (stopping power, range profiles), and measuring techniques (electrical and nonelec tri ca 1 measu ri ng techni ques, annea 1 i ng) are di scussed. In the appendi x, a review of the state of the art in modern implantation equipment is given.
Author : Susumu Namba
Publisher : Springer Science & Business Media
ISBN 13 : 1468421514
Total Pages : 716 pages
Book Rating : 4.4/5 (684 download)
Download or read book Ion Implantation in Semiconductors written by Susumu Namba and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.
Author : A.G. Cullis
Publisher : CRC Press
ISBN 13 : 1000157016
Total Pages : 836 pages
Book Rating : 4.0/5 (1 download)
Download or read book Microscopy of Semiconducting Materials 1987, Proceedings of the Institute of Physics Conference, Oxford University, April 1987 written by A.G. Cullis and published by CRC Press. This book was released on 2021-02-01 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt: The various forms of microscopy and related microanalytical techniques are making unique contributions to semiconductor research and development that underpin many important areas of microelectronics technology. Microscopy of Semiconducting Materials 1987 highlights the progress that is being made in semiconductor microscopy, primarily in electron probe methods as well as in light optical and ion scattering techniques. The book covers the state of the art, with sections on high resolution microscopy, epitaxial layers, quantum wells and superlattices, bulk gallium arsenide and other compounds, properties of dislocations, device silicon and dielectric structures, silicides and contacts, device testing, x-ray techniques, microanalysis, and advanced scanning microscopy techniques. Contributed by numerous international experts, this volume will be an indispensable guide to recent developments in semiconductor microscopy for all those who work in the field of semiconducting materials and research development.
Author : S.E. Donnelly
Publisher : Springer
ISBN 13 : 1489936807
Total Pages : 458 pages
Book Rating : 4.4/5 (899 download)
Download or read book Fundamental Aspects of Inert Gases in Solids written by S.E. Donnelly and published by Springer. This book was released on 2013-12-20 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: The NATO Advanced Research Workshop on Fundamental Aspects of Inert Gases in Solids, held at Bonas, France from 16-22 September 1990, was the fifth in a series of meetings that have been held in this topic area since 1979. The Consultants' Meeting in that year at Harwell on Rare Gas Behaviour in Metals and Ionic Solids was followed in 1982 by the Jiilich Inter national Symposium on Fundamental Aspects of Helium in Metals. Two smaller meetings have followed-a CECAM organised workshop on Helium Bubbles in Metals was held at Orsay, France in 1986 while in February 1989, a Topical Symposium on Noble Gases in Metals was held in Las Vegas as part of the large TMS/AIME Spring Meeting. As is well known, the dominating feature of inert gas atoms in most solids is their high heat of solution, leading in most situations to an essentially zero solubility and gas-atom precipita tion. In organising the workshop, one particular aim was to target the researchers in the field of inert-gas/solid interactions from three different areas--namely metals, tritides and nuclear fuels-in order to encourage and foster the cross-fertilisation of approaches and ideas. In these three material classes, the behaviour of inert gases in metals has probably been most studied, partly from technological considerations-the effects of helium production via (n, a) reac tions during neutron irradiation are of importance, particularly in a fusion reactor environ ment-and partly from a more fundamental viewpoint.
Author : Donald L. Wise
Publisher : CRC Press
ISBN 13 : 9780824701185
Total Pages : 1266 pages
Book Rating : 4.7/5 (11 download)
Download or read book Electrical and Optical Polymer Systems written by Donald L. Wise and published by CRC Press. This book was released on 1998-03-27 with total page 1266 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Offers background information, methods of characterization, and applications for electrical and optical polymers, including biopolymers, and tutorial sections that explain how to use the techniques."
Author : Jon Orloff
Publisher : CRC Press
ISBN 13 : 1351835777
Total Pages : 938 pages
Book Rating : 4.3/5 (518 download)
Download or read book Handbook of Charged Particle Optics written by Jon Orloff and published by CRC Press. This book was released on 2017-12-19 with total page 938 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the growing proliferation of nanotechnologies, powerful imaging technologies are being developed to operate at the sub-nanometer scale. The newest edition of a bestseller, the Handbook of Charged Particle Optics, Second Edition provides essential background information for the design and operation of high resolution focused probe instruments. The book’s unique approach covers both the theoretical and practical knowledge of high resolution probe forming instruments. The second edition features new chapters on aberration correction and applications of gas phase field ionization sources. With the inclusion of additional references to past and present work in the field, this second edition offers perfectly calibrated coverage of the field’s cutting-edge technologies with added insight into how they work. Written by the leading research scientists, the second edition of the Handbook of Charged Particle Optics is a complete guide to understanding, designing, and using high resolution probe instrumentation.
Author : Bernard Smith
Publisher :
ISBN 13 :
Total Pages : 208 pages
Book Rating : 4.F/5 ( download)
Download or read book Ion Implantation Range Data for Silicon and Germanium Device Technologies written by Bernard Smith and published by . This book was released on 1977 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 540 pages
Book Rating : 4.:/5 (321 download)
Download or read book Choice written by and published by . This book was released on 1986 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Milton Ohring
Publisher : Academic Press
ISBN 13 : 9780125249904
Total Pages : 744 pages
Book Rating : 4.2/5 (499 download)
Download or read book The Materials Science of Thin Films written by Milton Ohring and published by Academic Press. This book was released on 1992 with total page 744 pages. Available in PDF, EPUB and Kindle. Book excerpt: Prepared as a textbook complete with problems after each chapter, specifically intended for classroom use in universities.
Author : Victor E. Borisenko
Publisher : Springer Science & Business Media
ISBN 13 : 1489918043
Total Pages : 374 pages
Book Rating : 4.4/5 (899 download)
Download or read book Rapid Thermal Processing of Semiconductors written by Victor E. Borisenko and published by Springer Science & Business Media. This book was released on 2013-11-22 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.
Author : D.A. Bromley
Publisher : Springer Science & Business Media
ISBN 13 : 1461581036
Total Pages : 446 pages
Book Rating : 4.4/5 (615 download)
Download or read book Treatise on Heavy-Ion Science written by D.A. Bromley and published by Springer Science & Business Media. This book was released on 2012-11-27 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: For 75 years the stopping of energetic ions in matter has been a subject of great theoretical and experimental interest. The theoretical treatment of the stopping of ions in matter is largely due to the work of Bohr, 1-3 Bethe,4-6 Bloch,7. s and Lindhard,9-12 and it has been reviewed by Bohr,3 Fano,13 17 20 Jackson,14 Sigmund,15 Ahlen,16 and Ziegler et al. - Soon after the discovery of energetic particle emission from radioactive materials, there was interest in how these corpuscles were slowed down in traversing matter. In 1900, Marie Curie stated 21 the hypothesis that Hies rayons alpha sont des projectiles materiels susceptibles de perdre de leur vitesse en travers ant la matiere." Early attempts to evaluate this were incon clusive for there was not yet an accurate proposed model of the atom. Enough experimental evidence was collected in the next decade to make stopping power theory one of the central concerns of those attempting to develop an atomic model. J.J. Thomson, director of the prestigious Cavendish Laboratory, and Niels Bohr, a fresh postdoctoral scientist at Rutherford's Manchester Laboratory, both published almost simultaneously22. 23 an analysis of the stopping of charged particles by matter, and each contained many of their divergent ideas on the model of an atom. Thomson ignored in his paper the Rutherford alpha-particle scattering 24 experiment of a year before. But the nuclear atom with a heavy positively 25 charged core was the basis of Bohr's ideas.
Author : Anna Bogdan
Publisher : Trans Tech Publications Ltd
ISBN 13 : 3038263850
Total Pages : 306 pages
Book Rating : 4.0/5 (382 download)
Download or read book Advanced Materials, Synthesis, Development and Application written by Anna Bogdan and published by Trans Tech Publications Ltd. This book was released on 2014-01-15 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selected, peer reviewed papers from the X International Conference on Prospects of Fundamental Sciences Development (PFSD-2013), April 23-26, 2013, Tomsk, Russia
Author : J. P. Conde
Publisher : Trans Tech Publications
ISBN 13 :
Total Pages : 460 pages
Book Rating : 4.X/5 (2 download)
Download or read book Intergranular and Interphase Boundaries in Materials written by J. P. Conde and published by Trans Tech Publications. This book was released on 1996 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt: This publication focuses on the structural and chemical characterization of interfaces and their kinetic, mechanical and electrical properties. The size of the volume, consisting of almost 200 papers and over 900 pages, reflects the great current interest in the field.
Author : Gareth R. Eaton
Publisher : CRC Press
ISBN 13 : 1351088785
Total Pages : 442 pages
Book Rating : 4.3/5 (51 download)
Download or read book EPR IMAGING and IN VIVO EPR written by Gareth R. Eaton and published by CRC Press. This book was released on 2018-01-18 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides a detailed examination of the physical basis for EPR imaging and in vivo EPR spectroscopy, experimental arrangements, and data analysis. The EPR imaging methods described include continuous wave, spin-echo-detected and ENDOR-detected EPR with constant, stepped, modulated, and pulsed magnetic field gradients. Applications described include inhomogeneous materials, diffusion kinetics, reaction kinetics, orientation of liquid crystals, microwave distributions, magnetic field distributions, superconductors, radiation damage, and defects in solids. The book also covers other topics important to in vivo studies, including in vivo EPR spectroscopy, low-frequency EPR, state-of-the-art low-frequency EPR instruments, achievable sensitivity, and spin labels. The book will be of great interest to graduate students, researchers, and medical instrument developers who use EPR, as well as clinicians and chemists interested in the relationship between in vivo radicals (such as superoxide and diseases).
Author : M. Stutzmann
Publisher : Elsevier
ISBN 13 : 0444598839
Total Pages : 598 pages
Book Rating : 4.4/5 (445 download)
Download or read book Hydrogen in Semiconductors written by M. Stutzmann and published by Elsevier. This book was released on 2012-12-02 with total page 598 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces and therefore tends to have a large influence on surface reconstruction. A related phenomenon with large technological impact (for example in low cost solar cells) is the passivation of grain boundaries in microcrystalline semiconductors. Finally, hydrogenated semiconductor surfaces always appear as a boundary layer during low-energy hydrogenation of bulk semiconductors, so that a complete description of hydrogen uptake or desorption necessarily has to take these surfaces into account. This collection of invited and contributed papers has been carefully balanced to deal with amorphous and crystalline semiconductors and surfaces and presents basic and experimental work (basic and applied) as well as theory. The resulting volume presents a summary of the state-of-the-art in the field of hydrogen in semiconductors and will hopefully stimulate future work in this area.
