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Study And Realization Of Ingap Gaas Collector Up Double Heterojuntion Bipolar Transistors For High Performance Rf Applications
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Book Synopsis Study and Realization of InGaP, GaAs "collector Up" Double Heterojunction Bipolar Transistors for High Performance RF Applications by : Achim Henkel
Download or read book Study and Realization of InGaP, GaAs "collector Up" Double Heterojunction Bipolar Transistors for High Performance RF Applications written by Achim Henkel and published by . This book was released on 1998 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Study and Realization of InGaP/GaAs "Collector-up" Double Heterojuntion Bipolar Transistors for High Performance RF Applications by : Achim Henkel
Download or read book Study and Realization of InGaP/GaAs "Collector-up" Double Heterojuntion Bipolar Transistors for High Performance RF Applications written by Achim Henkel and published by . This book was released on 1998 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Study and Realization of InGaP by : Achim Henkel
Download or read book Study and Realization of InGaP written by Achim Henkel and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Reliability Study of InGaP/GaAs Heterojunction Bipolar Transistor MMIC Technology by Characterization, Modeling and Simulation by : Xiang Liu
Download or read book Reliability Study of InGaP/GaAs Heterojunction Bipolar Transistor MMIC Technology by Characterization, Modeling and Simulation written by Xiang Liu and published by . This book was released on 2011 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent years have shown real advances of microwave monolithic integrated circuits (MMICs) for millimeter-wave frequency systems, such as wireless communication, advanced imaging, remote sensing and automotive radar systems, as MMICs can provide the size, weight and performance required for these systems. Traditionally, GaAs pseudomorphic high electron mobility transistor (pHEMT) or InP based MMIC technology has dominated in millimeter-wave frequency applications because of their high f[subscript T] and f[subscript max] as well as their superior noise performance. But these technologies are very expensive. Thus, for low cost and high performance applications, InGaP/GaAs heterojunction bipolar transistors (HBTs) are quickly becoming the preferred technology to be used due to their inherently excellent characteristics. These features, together with the need for only one power supply to bias the device, make InGaP/GaAs HBTs very attractive for the design of high performance fully integrated MMICs. With the smaller dimensions for improving speed and functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, technology reliability issues are the first concern for the commercialization. As the thermally triggered instabilities often seen in InGaP/GaAs HBTs, a carefully derived technique to define the stress conditions of accelerated life test has been employed in our study to acquire post-stress device characteristics for the projection of long-term device performance degradation pattern. To identify the possible origins of the post-stress device behaviors observed experimentally, a two dimensional (2-D) TCAD numerical device simulation has been carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the commonly seen post-stress base current instability over the moderate base-emitter voltage region. HBT-based MMIC performance is very sensitive to the variation of core device characteristics and the reliability issues put the limit on its radio frequency (RF) behaviors. While many researchers have reported the observed stress-induced degradations of GaAs HBT characteristics, there has been little published data on the full understanding of stress impact on the GaAs HBT-based MMICs. If care is not taken to understand this issue, stress-induced degradation paths can lead to built-in circuit failure during regular operations. However, detection of this failure may be difficult due to the circuit complexity and lead to erroneous data or output conditions. Thus, a practical and analytical methodology has been developed to predict the stress impacts on HBT-based MMICs. It provides a quick way and guidance for the RF design engineer to evaluate the circuit performance with reliability considerations. Using the present existing EDA tools (Cadance SpectreRF and Agilent ADS) with the extracted pre- and post-stress transistor models, the electrothermal stress effects on InGaP/GaAs HBT-based RF building blocks including power amplifier (PA), low-noise amplifier (LNA) and oscillator have been systematically evaluated. This provides a potential way for the RF/microwave industry to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of advanced GaAs HBT MMIC technology and researchers have been exploring here for years. The reliability of GaAs HBT technology is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation provide methods and guidance for the RF designers to achieve more reliable RF circuits with advanced GaAs HBT technology in the future.
Book Synopsis Current Trends In Heterojunction Bipolar Transistors by : M F Chang
Download or read book Current Trends In Heterojunction Bipolar Transistors written by M F Chang and published by World Scientific. This book was released on 1996-01-29 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Book Synopsis SiGe, GaAs, and InP Heterojunction Bipolar Transistors by : Jiann S. Yuan
Download or read book SiGe, GaAs, and InP Heterojunction Bipolar Transistors written by Jiann S. Yuan and published by Wiley-Interscience. This book was released on 1999-04-12 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, comprehensive guide to heterojunction bipolar transistor technology. Owing to their superior performance in microwave and millimeter-wave applications, heterojunction bipolar transistors (HBTs) have become a major force in mobile and wireless communications. This book offers an integrated treatment of SiGe, GaAs, and InP HBTs, presenting a much-needed overview of HBTs based on different materials systems-their fabrication, analysis, and testing procedures. Highly respected expert Jiann S. Yuan discusses in depth the dc and RF performance and modeling of HBT devices, including simulation, thermal instability, reliability, low-temperature and high-temperature performance, and HBT analog and digital circuits. He provides step-by-step presentations of HBT materials-including Si HBTs and III-V and IV-IV compound HBTs, which are rarely described in the literature. Also covered are device and circuit interaction as well as specific high-speed devices in mobile and wireless communications. This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, and up-to-date experimental results culled from the latest research. An essential resource for circuit and device designers in the semiconductor industry, SiGe, GaAs, and InP Heterojunction Bipolar Transistors is also useful for graduate students in electrical engineering, applied physics, and materials science.
Book Synopsis Novel Applications of GaInP to GaAs Based Heterojunction Bipolar Transistors (HBTs) by : Shyh-Liang Fu
Download or read book Novel Applications of GaInP to GaAs Based Heterojunction Bipolar Transistors (HBTs) written by Shyh-Liang Fu and published by . This book was released on 1996 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Investigation of GaInP/GaAs Double Heterojunction Bipolar Transistors for Microwave Power Amplifier Applications by : Pin-Fan Chen
Download or read book Investigation of GaInP/GaAs Double Heterojunction Bipolar Transistors for Microwave Power Amplifier Applications written by Pin-Fan Chen and published by . This book was released on 2001 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A Study of InGaP/GaAs/InGaP Composite Collector Double Heterojunction Bipolar Transistor and GaAs Delta-doped Emitter Bipolar Junction Transistor by : Kim Luong Lew
Download or read book A Study of InGaP/GaAs/InGaP Composite Collector Double Heterojunction Bipolar Transistor and GaAs Delta-doped Emitter Bipolar Junction Transistor written by Kim Luong Lew and published by . This book was released on 2004 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Single and Double Heterojunction Bipolar Transistors in Collector-up Topology by :
Download or read book Single and Double Heterojunction Bipolar Transistors in Collector-up Topology written by and published by . This book was released on 1910 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: For the first time, DC- and RF characteristics of single and double heterojunction bipolar transistors (S-HBT and D-HBT respectively) in collector-up topology are measured and compared. Both devices are realized in InGaP/GaAs technology and offer high common emitter breakdown voltage (BVceo> 16V) and high maximum oscillation frequency (fmax> 115GHz).
Book Synopsis Heterojunction Bipolar Transistors for Circuit Design by : Jianjun Gao
Download or read book Heterojunction Bipolar Transistors for Circuit Design written by Jianjun Gao and published by John Wiley & Sons. This book was released on 2015-04-27 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Book Synopsis An Experimental and Theoretical Study of InGaP-GaAs Double Heterojunction Bipolar Transistors by : Tae-Woo Lee
Download or read book An Experimental and Theoretical Study of InGaP-GaAs Double Heterojunction Bipolar Transistors written by Tae-Woo Lee and published by . This book was released on 1992 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Modeling of InGaP/GaAs Heterojunction Bipolar Transistor by : Sung-Jin Ho
Download or read book Fabrication and Modeling of InGaP/GaAs Heterojunction Bipolar Transistor written by Sung-Jin Ho and published by . This book was released on 2007 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Designing Bipolar Transistor Radio Frequency Integrated Circuits by : Allen A. Sweet
Download or read book Designing Bipolar Transistor Radio Frequency Integrated Circuits written by Allen A. Sweet and published by Artech House. This book was released on 2007-12-01 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: If you're looking for an in-depth and up-to-date understanding bipolar transistor RFIC design, this practical resource is a smart choice. Unlike most books on the market that focus on GaAs MESFET or silicon CMOS process technology, this unique volume is dedicated exclusively to RFIC designs based on bipolar technology. Until now, critical GaAs HBT and SiGe HBT process technologies have been largely neglected in reference books. This book fills this gap, offering you a detailed treatment of this increasingly important topic. You discover a wide range of circuit topologies that are optimized for maximum performance with bipolar devices. From discussions of key applications (Bluetooth, UWB, GPS, WiMax) and architectures… to in-depth coverage of fabrication technologies and amplifier design… to a look at performance tradeoffs and production costs, this book arms you with complete design know-how for your challenging work in the field.
Book Synopsis Carbon-doped InP/InGaAs Heterojunction Bipolar Transistors for High Speed Applications by : Russell C. Gee
Download or read book Carbon-doped InP/InGaAs Heterojunction Bipolar Transistors for High Speed Applications written by Russell C. Gee and published by . This book was released on 1993 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis High Uniformity 6" InGaP/GaAs Heterojunction Bipolar transistors by :
Download or read book High Uniformity 6" InGaP/GaAs Heterojunction Bipolar transistors written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The growth of highly uniform, state-of-the-art InGaP/GaAs heterojunction bipolar transistors is demonstrated in a multi-wafer 6-inch configuration (AIX 2600). The uniformity of thickness, doping, composition, interface properties and minority carrier lifetime are assessed by electrical and structural characterization measurements, and shown to vary by less than "3% across the wafer. The dc current gain versus base sheet resistance on a high gain structure, has a non-linear dependence on base sheet resistance, typical of high performance InGaP/GaAs HBTs.
Book Synopsis Design, Simulation and Modeling of Collector-up GalnP/GaAs Heterojunction Bipolar Transistors by : Mohan K. Chirala
Download or read book Design, Simulation and Modeling of Collector-up GalnP/GaAs Heterojunction Bipolar Transistors written by Mohan K. Chirala and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The immense demand for communication systems world wide has created an enormous market for semiconductors devices in variegated applications. While scaled CMOS is consolidating its stronghold in the analog and RF domains, the wide gamut of microwave frequencies is being competed for by the various types of III-V heterojunction based semiconductor devices, which were made amenable to high-volume production, thanks to rapid improvements in bulk-processing and fabrication techniques in the last decade. Among these devices, the quest for faster, more powerful and low cost transistors has led researchers to investigate innovative topologies. The availability of powerful CAD tools that incorporate the most intricate physical phenomenon in the modeling process has provided a much needed impetus to this ongoing research. Of the scores of disparate devices that have been investigated, Heterojunction Bipolar Transistors (HBTs) have carved a niche for themselves owing to their high speeds and greater power handling capabilities. In this work, the design of an innovative HBT with a collector-up topology, i.e., with the collector situated on top of the device and emitter on the substrate side, is carried out and optimized for maximizing the high frequency performance. The material system used here is Ga x In 1-x P/GaAs (with x=0.51 indicating lattice matched composition), which has relatively superior material properties and etching characteristics than the conventional Al x Ga 1 -xAs/GaAs material system. The material properties of the ternary were investigated and the most suitable values were ascertained through meticulous research. These parameters, along with the mobility models (that were derived by investigating published results), were made compatible to an emitter-up HBT and incorporated into a two dimensional, physically-based, numerical simulator called ATLAS by Silvaco Inc. The motive was to verify the correctness of the material parameters and models derived. The simulation results compared favorably with the published results. With these verified material parameters and mobility models, a collector-up GaInP/GaAs HBT structure with unetched extrinsic emitter was simulated. After a performance appraisal with the emitter-up structure, the impact of having an undercut in the extrinsic base region was investigated. It was found that this undercut drastically improved the high frequency performance as well as DC characteristics of the collector-up structure. This was documented by a significant increase in cutoff frequency (f T) from 109 GHz to 140 GHz. It was even more pronounced in maximum frequency of oscillation (f max), which is more practically useful than cutoff frequency, from 76 GHz to 233 GHz. These simulation results are much better than the practically experimented values. The high frequency parametric values described here were achieved after scrupulously optimizing the collector-up HBT structure.
