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Studies On The Structure Of The Donor Related Deep Level And Strain Induced Effect In Gallium Arsenide And Aluminum Gallium Arsenide
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Book Synopsis Studies on the Structure of the Donor-related Deep Level and Strain-induced Effect in Gallium Arsenide and Aluminum Gallium Arsenide by : Zhiguo Wang
Download or read book Studies on the Structure of the Donor-related Deep Level and Strain-induced Effect in Gallium Arsenide and Aluminum Gallium Arsenide written by Zhiguo Wang and published by . This book was released on 1992 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1992 with total page 850 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1972 with total page 1056 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1991 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Graduate School Commencement by : University of Minnesota. Graduate School
Download or read book Graduate School Commencement written by University of Minnesota. Graduate School and published by . This book was released on 1992 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis An Investigation of Deep Levels in Aluminum Gallium Arsenide/gallium Arsenide Modulation-doped Heterojunction Structures by : Anthony Joseph Valois
Download or read book An Investigation of Deep Levels in Aluminum Gallium Arsenide/gallium Arsenide Modulation-doped Heterojunction Structures written by Anthony Joseph Valois and published by . This book was released on 1985 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Bell Telephone Laboratories, inc. Libraries and Information Systems Center Publisher : ISBN 13 : Total Pages :950 pages Book Rating :4.3/5 (91 download)
Book Synopsis Bell Laboratories Talks and Papers by : Bell Telephone Laboratories, inc. Libraries and Information Systems Center
Download or read book Bell Laboratories Talks and Papers written by Bell Telephone Laboratories, inc. Libraries and Information Systems Center and published by . This book was released on 1978 with total page 950 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Bell Telephone Laboratories, inc. Technical Information Libraries Publisher : ISBN 13 : Total Pages :876 pages Book Rating :4.:/5 (31 download)
Book Synopsis BTL Talks and Papers by : Bell Telephone Laboratories, inc. Technical Information Libraries
Download or read book BTL Talks and Papers written by Bell Telephone Laboratories, inc. Technical Information Libraries and published by . This book was released on 1973 with total page 876 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Donor-induced Layer Disordering Via Silicon Diffusion in Aluminum Gallium Arsenide-gallium Arsenide Quantum-well Heterostructures, and Disorder-defined Index-guided Stripe Geometry Laser Diodes by : Paul Gavrilovic
Download or read book Donor-induced Layer Disordering Via Silicon Diffusion in Aluminum Gallium Arsenide-gallium Arsenide Quantum-well Heterostructures, and Disorder-defined Index-guided Stripe Geometry Laser Diodes written by Paul Gavrilovic and published by . This book was released on 1985 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Defect-accelerated Donor Diffusion and Layer Intermixing in Aluminum Gallium Arsenide-gallium Arsenide Quantum Well Heterostructures by : Fredrick Anthony Kish (Jr.)
Download or read book Defect-accelerated Donor Diffusion and Layer Intermixing in Aluminum Gallium Arsenide-gallium Arsenide Quantum Well Heterostructures written by Fredrick Anthony Kish (Jr.) and published by . This book was released on 1989 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular-beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide/indium Gallium Arsenide Single Quantum-well Modulation-doped Field-effect Transistor Structures by : David Constantine Radulescu
Download or read book Molecular-beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide/indium Gallium Arsenide Single Quantum-well Modulation-doped Field-effect Transistor Structures written by David Constantine Radulescu and published by . This book was released on 1988 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Effect of Strain on the Electronic Structure of Indium Gallium Arsenide by : Jennchang Hwang
Download or read book Effect of Strain on the Electronic Structure of Indium Gallium Arsenide written by Jennchang Hwang and published by . This book was released on 1988 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis International Aerospace Abstracts by :
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1984 with total page 922 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Deep Level Related Studies in Gallium Arsenide with the Constant Capacitance Voltage Transient Technique by : Ming-Bing Chang
Download or read book Deep Level Related Studies in Gallium Arsenide with the Constant Capacitance Voltage Transient Technique written by Ming-Bing Chang and published by . This book was released on 1990 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Investigation of Implantation Damage in Aluminum Gallium Arsenide/gallium Arsenide Heterostructures Using Ion Channeling and Transmission Electron Microscopy by : Britt Anne Turkot
Download or read book Investigation of Implantation Damage in Aluminum Gallium Arsenide/gallium Arsenide Heterostructures Using Ion Channeling and Transmission Electron Microscopy written by Britt Anne Turkot and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The implantation damage behavior of GaAs/Al$sb{0.6}$Ga$sb{0.4}$As multilayer structures has been investigated by implanting samples with 1 MeV Kr$sp+$, 1.5 MeV Kr$sp+$, 1 MeV Ar$sp+$, and 1.5 MeV Kr$sp{++}$ at 77 K. The resulting damage state was analyzed using low-, room-, and high-temperature Rutherford backscattering spectrometry ion channeling and room-temperature transmission electron microscopy techniques. In all implantations the level of damage produced in these structures was found to increase with depth, and the damage state produced in samples containing single- and double-layers of $rm Alsb{0.6}Gasb{0.4}As$ was independent of the internal interfaces. The observed damage can be explained using a model which relates the amount of implantation-induced disorder to the number of cascade-producing events in a given region. This model can also account for results in the GaAs/AlAs system, such as the greater amount of mixing which is observed to occur at deeper AlAs interfaces and also that amorphization of AlAs layers initiates at the interfaces. Room temperature recovery of partially crystalline $rm Alsb{0.6}Gasb{0.4}As$ was observed to occur following low temperature implantation. Depending on the implantation condition, this room temperature recovery can lead to the development of planar defects. In addition, the extent of recovery in $rm Alsb{0.6}Gasb{0.4}As$ was found to be related to the original damage state, with more complex damage requiring higher annealing temperatures. Misoriented crystallites were produced by the recrystallization of GaAs implanted at room temperature to a dose far exceeding that required for low temperature amorphization. Continued ion impacts produced crystalline nucler which increased in size as a result of the enhanced atomic motion produced by the energetic ions. Similar crystallites were found in TEM foils which remained in the as-thinned condition for several months. In these samples, recrystallization resulted from a mechanism involving low energy events with the ability to induce bond rearrangement.
