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Author : Cheng Cai
Publisher :
ISBN 13 :
Total Pages : 244 pages
Book Rating : 4.:/5 (319 download)
Download or read book Studies on Schottky Barriers with Heterojunctions for III-V and II-VI Semiconductor Compounds written by Cheng Cai and published by . This book was released on 2000 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : A.G. Milnes
Publisher : Elsevier
ISBN 13 : 0323141366
Total Pages : 430 pages
Book Rating : 4.3/5 (231 download)
Download or read book Heterojunctions and Metal Semiconductor Junctions written by A.G. Milnes and published by Elsevier. This book was released on 2012-12-02 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heterojunctions and Metal-Semiconductor Junctions discusses semiconductor-semiconductor heterojunctions and metal-semiconductor heterojunctions, which are of significant practical importance today and also of considerable scientific interest, with worthwhile problems still to be explored and understood. Many classes of heterojunctions are believed to have new and valuable applications. Although some aspects of heterojunction behavior remain areas for continued scientific and technological study, the main outlines of the subject are clear. This book comprises nine chapters, and begins with an introduction to semiconductor heterojunctions. Succeeding chapters then discuss semiconductor p-n heterojunction models and diode behavior; heterojunction transistors; isotype (n-n, p-p) heterojunctions; optical properties of heterojunctions and heterojunction lasers; metal-semiconductor barriers; metal-semiconductor junction behavior; high yield photoemissive cathodes; and fabrication of heterojunctions. This book will be of interest to practitioners in the fields of applied physics.
Author : Sumbit Chaliha
Publisher : LAP Lambert Academic Publishing
ISBN 13 : 9783848429653
Total Pages : 276 pages
Book Rating : 4.4/5 (296 download)
Download or read book Thinfilm Schottky Barriers and Heterojunctions written by Sumbit Chaliha and published by LAP Lambert Academic Publishing. This book was released on 2012-03 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor thin films and their junctions such as metal-semiconductor (Schottky barrier) and heterojunctions have received much attention due to their applications in various electronic and optoelectronic devices including solar cells. This book is based on the electrical and optical studies of thin film Schottky barriers and heterojunctions with an aim to use in optoelectronic devices. In this work, two wide band gap semiconductors, one Zinc Selenide (ZnSe) from group II-VI, and another transparent conducting oxide, Indium Tin Oxide are investigated in the forms of thin films and their junctions, for the possible uses as photovoltaic converter. The structural, morphological, optical and electrical (in dark and under illumination) properties of ZnSe and ITO thin films prepared at different growth conditions by thermal evaporation method have been studied by applying different experimental techniques. Schottky barriers and heterojunctions of ZnSe with different barrier metals and semiconductors have been fabricated and their current-voltage and photovoltaic characteristics are studied. The findings of it presented in this book will be helpful for the researchers of this field.
Author : Giorgio Margaritondo
Publisher : Springer Science & Business Media
ISBN 13 : 9400930739
Total Pages : 348 pages
Book Rating : 4.4/5 (9 download)
Download or read book Electronic Structure of Semiconductor Heterojunctions written by Giorgio Margaritondo and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: E se non che di cid son vere prove A nd were it not for the true evidence Per piti e piti autori, che sa, ra. nno Of many authors who will be Per i miei versi nominati altrove, Mentioned elsewhere in my rhyme Non presterei alla penna 10. mana I would not lend my hand to the pen Per nota1' cid ch'io vidi, can temenza And describe my observations, for fear ehe non fosse do. altri casso e van 0; That they would be rejected and in vane; Mala lor chiara. e vera. esperienza But these authors' clear and true experience Mi assicura. nel dir, come persone Encourages me to report, since they Degne di fede ad ogni gra. n sentenza. Should always be trusted for their word. [From" Dittamondo", by Fazio degli UbertiJ Heterojunction interfaces, the interfaces between different semiconducting materi als, have been extensively explored for over a quarter of a century. The justifica tion for this effort is clear - these interfaces could become the building blocks of lllany novel solid-state devices. Other interfaces involving semiconductors are al ready widely used in technology, These are, for example, metal-semiconductor and insulator-semiconductor junctions and hOll1ojunctions. In comparison, the present applications of heterojunction int. erfaces are limited, but they could potentially becOlne lnuch lllore ext. ensive in the neal' future. The path towards the widespread use of heterojunctions is obstructed by several obstacles
Author : W. E. Spicer
Publisher :
ISBN 13 :
Total Pages : 57 pages
Book Rating : 4.:/5 (227 download)
Download or read book Study of the Electronic Surface States of III-V Compounds written by W. E. Spicer and published by . This book was released on 1979 with total page 57 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although several theories of Schottky-barrier formation have been proposed, none has emerged as the correct general theory which elucidates the mechanism responsible for the barrier formation. Indeed, there may be no such general theory and, at the present time, it seems more appropriate to study limited classes of semiconductor materials. We have chosen the 3-5 compounds for both theoretical and practical reasons. The cleavage faces of GaAS, GaSb, and InP have the advantage that there are no intrinsic states in the band gap. This is in contrast to the more familiar column 4 semiconductors which do have intrinsic surface states in band gap upon cleaving. It was this concept of intrinsic semiconductor surface states in the gap which was used by Bardeen to explain Schottky-barrier formation on Si. However, the presence of these intrinsic surface states in the gap on the clean cleaved Si (111) surface does not rule out the possibility that other mechanisms may be responsible for surface Fermi energy stabilization after deposition of an overlayer. (Author).
Author : Robert A. Scranton
Publisher :
ISBN 13 :
Total Pages : 116 pages
Book Rating : 4.:/5 (436 download)
Download or read book Investigations of the Conductor-semiconductor Interface written by Robert A. Scranton and published by . This book was released on 1978 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: I. Schottky barriers produced by polymeric sulfur nitride, (SN)x, on nine common III-V and II-VI compound semiconductors are compared to barriers formed by Au. The conductor (SN)x produces significantly higher barriers to n-type semiconductors and lower barriers to p-type semiconductors than Au, the most electronegative elemental metal. The barrier height improvement, defined as [phi](SN)x - [phi](Au), is smaller on covalent semiconductors than on ionic semiconductors; (SN)x barriers follow the ionic-covalent transition. Details of (SN)x film deposition, samples preparation, and barrier height measurements are described. II. The rate of dissolution of amorphous Si into solid Al is measured. The rate of movement of the amorphous Si/Al interface is found to be much faster than predicted by a simple model of the transport of Si through Al. This result is related to defects in the growth of epitaxial Si using the solid phase epitaxy process.
Author : Ghenadii Korotcenkov
Publisher : Springer Nature
ISBN 13 : 3031240006
Total Pages : 700 pages
Book Rating : 4.0/5 (312 download)
Download or read book Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors written by Ghenadii Korotcenkov and published by Springer Nature. This book was released on 2023-03-30 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt: The reference provides interdisciplinary discussion for diverse II-VI semiconductors with a wide range of topics. The third volume of a three volume set, the book provides an up-to-date account of the present status of multifunctional II-VI semiconductors, from fundamental science and processing to their applications as various sensors, biosensors, and radiation detectors, and based on them to formulate new goals for the further research. The chapters in this volume provide a comprehensive overview of the manufacture, parameters and principles of operation of these devices. The application of these devices in various fields such medicine, agriculture, food quality control, environment monitoring and others is also considered. The analysis carried out shows the great potential of II-VI semiconductor-based sensors and detectors for these applications. Considers solid-state radiation detectors based on semiconductors of II-VI group and their applications; Analyzes the advantages of II-VI compounds to develop chemical and optical gas and ion sensors; Describes all types of biosensors based on II-VI semiconductors and gives examples of their use in various fields.
Author : Ghenadii Korotcenkov
Publisher : Springer Nature
ISBN 13 : 3031195310
Total Pages : 585 pages
Book Rating : 4.0/5 (311 download)
Download or read book Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors written by Ghenadii Korotcenkov and published by Springer Nature. This book was released on 2023-04-20 with total page 585 pages. Available in PDF, EPUB and Kindle. Book excerpt: Three-volumes book “Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors” is the first to cover both chemical sensors and biosensors and all types of photodetectors and radiation detectors based on II-VI semiconductors. It contains a comprehensive and detailed analysis of all aspects of the application of II-VI semiconductors in these devices. The first volume "Materials and Technologies" of a three-volume set describes the physical, chemical and electronic properties of II-VI compounds, which give rise to an increased interest in these semiconductors. Technologies that are used in the development of various devices based on II-VI connections, such as material synthesis, deposition, characterization, processing, and device fabrication, are also discussed in detail in this volume. It covers also topics related to synthesis and application of II-VI-based nanoparticles and quantum dots, as well their toxicity, biocompatibility and biofunctionalization.
Author :
Publisher :
ISBN 13 :
Total Pages : 892 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 892 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Mukesh Jain
Publisher : World Scientific
ISBN 13 : 9814536830
Total Pages : 603 pages
Book Rating : 4.8/5 (145 download)
Download or read book Ii-vi Semiconductor Compounds written by Mukesh Jain and published by World Scientific. This book was released on 1993-05-04 with total page 603 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contents: X-Ray Characterisation of II-VI Semiconductor Materials (D Gao et al.)Electronic Structure of II-VI Semiconductors and Their Alloys (S-H Wei)Radiative Recombination Processes in Rare Earth Doped II-VI Materials (M Godlewski et al.)Nonlinear Optical Properties of Heavily Doped CdS (U Neukirch)Nanostructures of Broad Gap (II,Mn) VI Semiconductors (W Heimbrodt & O Goede)Co-Based II-VI Semimagnetic Semiconductors (A Twardowski et al.)Photoluminescence and Raman Scattering of ZnSe-ZnTe Strained Layer Superlattices (K Kumazaki)Novel Electronic Processes in Mercury-Based Superlattices (J R Meyer et al.)Strain, Pressure and Piezoelectric Effects in Strained II-VI Superlattices and Heterostructures (E Anastassakia)Electronic Structures of Strained II-VI Superlattices (T Nakayama)Devices and Applications of II-VI Compounds (S Colak)Solar Cells Based on II-VI Semiconductors (H Uda)ZnSe and Its Applications for Blue-Light Laser Diodes (M Pessa & D Ahn)Molecular Beam Epitaxy of HgCdTe for Electro-Optical Infrared Applications (J M A Cortés)and other papers Readership: Condensed matter physicists and electronic engineers. keywords:
Author : Sadao Adachi
Publisher : IET
ISBN 13 : 9780852965580
Total Pages : 354 pages
Book Rating : 4.9/5 (655 download)
Download or read book Properties of Aluminium Gallium Arsenide written by Sadao Adachi and published by IET. This book was released on 1993 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.
Author : Karl Wolfgang Böer
Publisher : Springer Science & Business Media
ISBN 13 : 9780442006723
Total Pages : 1496 pages
Book Rating : 4.0/5 (67 download)
Download or read book Survey of Semiconductor Physics written by Karl Wolfgang Böer and published by Springer Science & Business Media. This book was released on 1990 with total page 1496 pages. Available in PDF, EPUB and Kindle. Book excerpt: Taking up where the first volume left off, this work provides coverage of the inhomogeneous semiconductor. It deals mainly with Si and GaAs, but also investigates other materials of theoretical and practical interest, such as Ge, other III-V and II-VI compounds, and amorphous SiH. Equipped with this source, physicists, semiconductor engineers, device engineers and fabrication engineers will have access to a vast reservoir of practical information on the design, production and operations of semiconductor devices.
Author :
Publisher :
ISBN 13 :
Total Pages : 976 pages
Book Rating : 4.3/5 (91 download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1983 with total page 976 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiannual, with semiannual and annual indexes. References to all scientific and technical literature coming from DOE, its laboratories, energy centers, and contractors. Includes all works deriving from DOE, other related government-sponsored information, and foreign nonnuclear information. Arranged under 39 categories, e.g., Biomedical sciences, basic studies; Biomedical sciences, applied studies; Health and safety; and Fusion energy. Entry gives bibliographical information and abstract. Corporate, author, subject, report number indexes.
Author : Carl Wilmsen
Publisher : Springer Science & Business Media
ISBN 13 : 1468448358
Total Pages : 472 pages
Book Rating : 4.4/5 (684 download)
Download or read book Physics and Chemistry of III-V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Author : Stanford University. Stanford Electronics Laboratories
Publisher :
ISBN 13 :
Total Pages : 158 pages
Book Rating : 4.F/5 ( download)
Download or read book Properties of III-V Compound Heterojunctions Prepared by Liquid Phase Epitaxial Techniques written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1975 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Giovanni Agostini
Publisher : Elsevier
ISBN 13 : 0080558151
Total Pages : 501 pages
Book Rating : 4.0/5 (85 download)
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Elsevier. This book was released on 2011-08-11 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Author : Sadao Adachi
Publisher : John Wiley & Sons
ISBN 13 : 9780470744390
Total Pages : 422 pages
Book Rating : 4.7/5 (443 download)
Download or read book Properties of Semiconductor Alloys written by Sadao Adachi and published by John Wiley & Sons. This book was released on 2009-03-12 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III−V and II−VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe, AlGaAs, GaInPAs, and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe, CSiSn, etc.), III−N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or Be-based II−VI semiconductor alloys. Finally there is an extensive bibliography included for those who wish to find additional information as well as tabulated values and graphical information on the properties of semiconductor alloys.
