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Studies Of Iron Acceptors In Indium Phosphide By Photoconductivity And Photoluminescence Techniques
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Book Synopsis Studies of Iron Acceptors in Indium Phosphide by Photoconductivity and Photoluminescence Techniques by : Po-hung Ng
Download or read book Studies of Iron Acceptors in Indium Phosphide by Photoconductivity and Photoluminescence Techniques written by Po-hung Ng and published by . This book was released on 1990 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Studies of Iron Acceptors in Indium Phosphide by Photoconductivity and Photoluminescence Techniques by : 伍寶洪
Download or read book Studies of Iron Acceptors in Indium Phosphide by Photoconductivity and Photoluminescence Techniques written by 伍寶洪 and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Studies of Iron Acceptors in Indium Phosphide by Photoconductivity and Photoluminescence Techniques" by 伍寶洪, Po-hung, Ng, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3123195 Subjects: Indium phosphide Semiconductors - Impurity transition Photoconductivity Photoluminescence
Book Synopsis Abstracts of Theses by : University of Hong Kong
Download or read book Abstracts of Theses written by University of Hong Kong and published by . This book was released on 1989 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of Indium Phosphide written by and published by Institution of Electrical Engineers. This book was released on 1991 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: Invaluble to those studying or exploiting Indium Phosphide, which can provide tunable light sources at wavelengths which undergo minimum attenuation in fiber optic cables.
Book Synopsis Properties, Processing and Applications of Indium Phosphide by : T. P. Pearsall
Download or read book Properties, Processing and Applications of Indium Phosphide written by T. P. Pearsall and published by Inst of Engineering & Technology. This book was released on 2000-01 with total page 279 pages. Available in PDF, EPUB and Kindle. Book excerpt: Annotation This collection of 49 papers identifies the significant advances and distills the current knowledge from the literature which has been published on indium phosphate (InP) in the last ten years. The major areas of discussion are the importance on InP properties in devices; mechanical, thermal, piezoelectric and electro-optic properties; electronic transport properties; band structure; optical properties; defects, deep levels and their detection; and processing technologies. Topics include InP-based alloys as optical amplifiers and lasers, electron and hole mobilities in InP, conduction band and valance band offsets at various InP/semiconductor interfaces, defect energy levels in irradiated or implanted InP, and etching of InP. Some of the material is reprinted from published in 1991. Distributed by INSPEC. Annotation c. Book News, Inc., Portland, OR (booknews.com)
Book Synopsis Photoluminescence of Undoped, Semi-Insulating, and Mg-Implanted Indium Phosphide by : Gernot Siefried Pomrenke
Download or read book Photoluminescence of Undoped, Semi-Insulating, and Mg-Implanted Indium Phosphide written by Gernot Siefried Pomrenke and published by . This book was released on 1979 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt: A photoluminescent investigation was made of undoped, semi-insulating, unannealed and annealed Mg-ion implanted, indium phosphide which originated from Czochralski, vapor, and liquid grown crystals. Ion implantation was performed at fluences of 5 x 10 to the 12th power ions/sq cm to 1 x 10 to the 15 power ions/sq cm with an energy of 120 keV at room temperature, followed by annealing at 700 degrees C and 750 degrees C for fifteen minutes using a Si3N4 encapsulant. Luminescence of undoped InP was studied with respect to temperature, emission intensity, and excitation intensity; results included the possible identification of the following radiative recombinations: free exciton, bound exciton, donor-to-valence, and donor-to-acceptor. Broad, low intensity peaks were identified at 1.0541 eV, 0.9374 eV, and 1.15 eV. Spectral results of the less intense semi-insulating InP:Fe were identical to undoped InP aside from a 1.38 eV high energy shoulder and low intensity peak at 1.31 eV. Photoluminescence of unannealed, implanted samples resulted in a 0.9643 eV peak with a long, low energy shoulder. Emission intensity and peak energy of annealed, implanted samples were studied as a function of dosage and anneal temperature. The post-implantation annealing at 750 degree C was sufficient to obtain efficient luminescence. Analysis of the 750 degree C annealed samples indicates that the peak due to recombinations involving implanted Mg acceptors is located between 1.384 eV at 50 degrees K. Superior spectral results from VPE InP places the Mg peak position at 1.3801 eV.
Book Synopsis Analytical Techniques for the Characterization of Compound Semiconductors by : G. Bastard
Download or read book Analytical Techniques for the Characterization of Compound Semiconductors written by G. Bastard and published by Elsevier. This book was released on 1991-07-26 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
Download or read book Soviet Physics written by and published by . This book was released on 1992 with total page 698 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Semiconductor Material and Device Characterization by : Dieter K. Schroder
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Download or read book Physics Briefs written by and published by . This book was released on 1992 with total page 1358 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Applied Science & Technology Index by :
Download or read book Applied Science & Technology Index written by and published by . This book was released on 1996 with total page 1100 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Analytical Techniques for the Characterization of Compound Semiconductors by : Gerald Bastard
Download or read book Analytical Techniques for the Characterization of Compound Semiconductors written by Gerald Bastard and published by North Holland. This book was released on 1991 with total page 566 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
Book Synopsis Optical Constants of Crystalline and Amorphous Semiconductors by : Sadao Adachi
Download or read book Optical Constants of Crystalline and Amorphous Semiconductors written by Sadao Adachi and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 725 pages. Available in PDF, EPUB and Kindle. Book excerpt: Knowledge of the refractive indices and absorption coefficients of semiconductors is especially import in the design and analysis of optical and optoelectronic devices. The determination of the optical constants of semiconductors at energies beyond the fundamental absorption edge is also known to be a powerful way of studying the electronic energy-band structures of the semiconductors. The purpose of this book is to give tabulated values and graphical information on the optical constants of the most popular semiconductors over the entire spectral range. This book presents data on the optical constants of crystalline and amorphous semiconductors. A complete set of the optical constants are presented in this book. They are: the complex dielectric constant (E=e.+ieJ, complex refractive index (n*=n+ik), absorption coefficient (a.), and normal-incidence reflectivity (R). The semiconductor materials considered in this book are the group-IV elemental and binary, llI-V, IT-VI, IV-VI binary semiconductors, and their alloys. The reader will fmd the companion book "Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles" useful since it emphasizes the basic material properties and fundamental prinCiples.
Book Synopsis Low-Dimensional Structures in Semiconductors by : A.R. Peaker
Download or read book Low-Dimensional Structures in Semiconductors written by A.R. Peaker and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 227 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains a sequence of reviews presented at the NATO Advanced Study Institute on 'Low Dimensional Structures in Semiconductors ... from Basic Physics to Applications.' This was part of the International School of Materials Science and 1990 at the Ettore Majorana Centre in Sicily. Technology held in July Only a few years ago, Low Dimensional Structures was an esoteric concept, but now it is apparent they are likely to playa major role in the next generation of electronic devices. The theme of the School acknowledged this rapidly developing maturity.' The contributions to the volume consider not only the essential physics, but take a wider view of the topic, starting from material growth and processing, then prog ressing right through to applications with some discussion of the likely use of low dimensional devices in systems. The papers are arranged into four sections, the first of which deals with basic con cepts of semiconductor and low dimensional systems. The second section is on growth and fabrication, reviewing MBE and MOVPE methods and discussing the achievements and limitations of techniques to reduce structures into the realms of one and zero dimensions. The third section covers the crucial issue of interfaces while the final section deals with devices and device physics.
Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Download or read book INIS Atomindex written by and published by . This book was released on 1988 with total page 962 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 1990 with total page 2598 pages. Available in PDF, EPUB and Kindle. Book excerpt:
