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Structural And Microstructural Characterization Of Iii Nitrides On 6h Sic 0001 Substrates
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Book Synopsis Structural and Microstructural Characterization of III-Nitrides on 6H-SiC (0001) Substrates by : Edward Alfred Preble
Download or read book Structural and Microstructural Characterization of III-Nitrides on 6H-SiC (0001) Substrates written by Edward Alfred Preble and published by . This book was released on 2001 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: silicon carbide, gallium nitride, contacts, pendeo, hydrogen etching, x-ray, transmission electron microscopy, GaN, SiC, AlN.
Book Synopsis Structural and Microstructural Characterization of III-Nitrides on 6H-SiC (0001) Substrates by :
Download or read book Structural and Microstructural Characterization of III-Nitrides on 6H-SiC (0001) Substrates written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Characterization of nitride films on 6H-SiC (0001) wafers via x-ray, TEM, and AFM was accomplished on standard GaN thin films with AlN or AlGaN buffer layers. TEM sample thinning capability was improved through the use of Nomarski in an optical microscope to gauge the thickness of the sample during preparation. TEM analysis was then completed of Au and Pt films deposited on chemical vapor cleaned GaN with annealed up to 800 & $176;C. Chemical reactions were detected in x-ray measurements of the 800 & deg;C Pt samples and GaN/metal interface roughening were confirmed by TEM images in both metals. Interface roughening is attributed to the chemical reactions and interfacial stresses greater than the yield stress of the metal created during heat treatments by the difference in the thermal expansion coefficients of the GaN and the metals. The GaN rocking curves were found to track very closely to the values of the underlying substrate and changes in buffer layer growth temperatures were found to change the screw and edge dislocation populations of subsequent GaN layers. GaN grown on 1030 & deg;C AlN buffer layers showed the lowest edge dislocation populations when compared against buffers grown in the range of 1010-1220 & deg;C, even though the 1220 & deg;C AlN was much smoother. AlGaN buffer layers provided more edge dislocation reduction, with a 1090 & deg;C Al0.2Ga0.8N layer yielding the best GaN rocking curve values found in this work. GaN films with AlN buffer layers grown on hydrogen etched SiC substrates did not show rocking curve improvement when compared against samples with unetched substrates. The AlN layers showed extremely narrow, substrate limited, on-axis rocking curve values, but it is not clear as to whether additional defects are present that may broaden the off-axis rocking curves, causing the poorer results seen in the GaN films. Reciprocal space maps of uncoalesced, maskless pendeo epitaxy samples revealed that the wing regions are shielded from poor substrate m.
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2002 with total page 896 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 2001 with total page 776 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the Topical Workshop on III-V Nitrides by : Isamu Akasaki
Download or read book Proceedings of the Topical Workshop on III-V Nitrides written by Isamu Akasaki and published by . This book was released on 1997 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Comprehensive Semiconductor Science and Technology by :
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Book Synopsis Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995 by : Woo
Download or read book Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995 written by Woo and published by CRC Press. This book was released on 1996-04-25 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.
Book Synopsis Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995 by : Institute of Physics Conference
Download or read book Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995 written by Institute of Physics Conference and published by CRC Press. This book was released on 2020-10-28 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.
Book Synopsis Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices by : O. Auciello
Download or read book Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices written by O. Auciello and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: The synthesis of multicomponent/multilayered superconducting, conducting, semiconducting and insulating thin films has become the subject of an intensive, worldwide, interdisciplinary research effort. The development of deposition-characterization techniques and the science and technology related to the synthesis of these films are critical for the successful evolution of this interdisciplinary field of research and the implementation of the new materials in a whole new generation of advanced microdevices. This book contains the lectures and contributed papers on various scientific and technological aspects of multicomponent and multilayered thin films presented at a NATO/ASI. Compared to other recent books on thin films, the distinctive character of this book is the interdisciplinary treatment of the various fields of research related to the different thin film materials mentioned above. The wide range of topics discussed in this book include vacuum-deposition techniques, synthesis-processing, characterization, and devices of multicomponent/multilayered oxide high temperature superconducting, ferroelectric, electro-optic, optical, metallic, silicide, and compound semiconductor thin films. The book presents an unusual intedisciplinary exchange of ideas between researchers with cross-disciplinary backgrounds and it will be useful to established investigators as well as postdoctoral and graduate students.
Book Synopsis International Aerospace Abstracts by :
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 920 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis LED for Lighting Applications by : Patrick Mottier
Download or read book LED for Lighting Applications written by Patrick Mottier and published by John Wiley & Sons. This book was released on 2010-01-05 with total page 299 pages. Available in PDF, EPUB and Kindle. Book excerpt: Light Emitting Diodes (LEDs) are no longer confined to use in commercial signage and have now moved firmly, and with unquestioned advantages, into the field of commercial and domestic lighting. This development was prompted in the late 1980s by the invention of the blue LED, a wavelength that had previously been missing from the available LED spectrum and which opened the way to providing white light. Since that point, LED performance (including energy efficiency) has improved dramatically, and now compares with the performance of fluorescent lights - and there remain further performance improvements yet to be delivered. The book begins with the principles of LED lighting, then focuses on issues and challenges. Chapters are devoted to key steps in LED manufacturing: substrate, epitaxy, process and packaging. Photoelectric characterization of LEDs, Lighting with LEDs and the imposition of a certain level of color quality, are the subject of later chapters, and finally there is a detailed discussion of the emergence of OLEDs, or organic LEDs, which have specific capabilities of immediate interest and importance in this field.
Book Synopsis Heteroepitaxy of Semiconductors by : John E. Ayers
Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2018-10-08 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and lattice strain relaxation, various characterization tools used to monitor and evaluate the growth process, and finally, defect engineering approaches. Numerous examples highlight the concepts while extensive micrographs, schematics of experimental setups, and graphs illustrate the discussion. Serving as a solid starting point for this rapidly evolving area, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization makes the principles of heteroepitaxy easily accessible to anyone preparing to enter the field.
Download or read book III-Nitride Electronic Devices written by and published by Academic Press. This book was released on 2019-10-18 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas – RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field
Book Synopsis Japanese Journal of Applied Physics by :
Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2007 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
