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Statistical Modeling Of Mosfets And Interconnects For Deep Submicron Technologies
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Book Synopsis Statistical Modeling of MOSFETs and Interconnects for Deep-submicron Technologies by : James Chieh-Tsung Chen
Download or read book Statistical Modeling of MOSFETs and Interconnects for Deep-submicron Technologies written by James Chieh-Tsung Chen and published by . This book was released on 1998 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Predictive Technology Modeling for Deep-submicron MOSFET Design by : Yu Wen Wang
Download or read book Predictive Technology Modeling for Deep-submicron MOSFET Design written by Yu Wen Wang and published by . This book was released on 2002 with total page 89 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modelling and Analysis of Interconnects for Deep Submicron Systems-on-chip by : Dinesh Pamunuwa
Download or read book Modelling and Analysis of Interconnects for Deep Submicron Systems-on-chip written by Dinesh Pamunuwa and published by . This book was released on 2003 with total page 163 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced Modeling of Deep Submicron P-Si MOSFETs by : Ksenia Roze
Download or read book Advanced Modeling of Deep Submicron P-Si MOSFETs written by Ksenia Roze and published by . This book was released on 1998 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Analytical Modeling and Characterization of Deep Submicron Interconnect by : Dennis Michael Sylvester
Download or read book Analytical Modeling and Characterization of Deep Submicron Interconnect written by Dennis Michael Sylvester and published by . This book was released on 1999 with total page 706 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization and Modeling of Deep-submicron MOSFET's Including Frequency Effects by : Jen Shuang Wong
Download or read book Characterization and Modeling of Deep-submicron MOSFET's Including Frequency Effects written by Jen Shuang Wong and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Hot Carrier Degradation in Semiconductor Devices by : Tibor Grasser
Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2004 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 2000 with total page 816 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Timing Performance of Nanometer Digital Circuits Under Process Variations by : Victor Champac
Download or read book Timing Performance of Nanometer Digital Circuits Under Process Variations written by Victor Champac and published by Springer. This book was released on 2018-04-18 with total page 195 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the digital design of integrated circuits under process variations, with a focus on design-time solutions. The authors describe a step-by-step methodology, going from logic gates to logic paths to the circuit level. Topics are presented in comprehensively, without overwhelming use of analytical formulations. Emphasis is placed on providing digital designers with understanding of the sources of process variations, their impact on circuit performance and tools for improving their designs to comply with product specifications. Various circuit-level “design hints” are highlighted, so that readers can use then to improve their designs. A special treatment is devoted to unique design issues and the impact of process variations on the performance of FinFET based circuits. This book enables readers to make optimal decisions at design time, toward more efficient circuits, with better yield and higher reliability.
Book Synopsis Modeling and Simulation of Deep Submicron Mosfet by : Nabil Adam
Download or read book Modeling and Simulation of Deep Submicron Mosfet written by Nabil Adam and published by . This book was released on 2005 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis MOSFET modeling and drain engineering analysis for deep submicron dimensions by : Hyungsoon Shin
Download or read book MOSFET modeling and drain engineering analysis for deep submicron dimensions written by Hyungsoon Shin and published by . This book was released on 1990 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Predictive Technology Model in the Late Silicon Era and Beyond by : Yu Cao
Download or read book The Predictive Technology Model in the Late Silicon Era and Beyond written by Yu Cao and published by Now Publishers Inc. This book was released on 2010 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aggressive scaling of CMOS technology has inevitably led to vastly increased power dissipation, process variability and reliability degradation, posing tremendous challenges to robust circuit design. To continue the success of integrated circuits, advanced design research must start in parallel with or even ahead of technology development. This new paradigm requires the Predictive Technology Model (PTM) for future technology generations, including nanoscale CMOS and post-silicon devices. This paper presents a comprehensive set of predictive modeling developments. Starting from the PTM of traditional CMOS devices, it extends to CMOS alternatives at the end of the silicon roadmap, such as strained Si, high-k/metal gate, and FinFET devices. The impact of process variation and the aging effect is further captured by modeling the device parameters under the influence. Beyond the silicon roadmap, the PTM outreaches to revolutionary devices, especially carbon-based transistor and interconnect, in order to support explorative design research. Overall, these predictive device models enable early stage design exploration with increasing technology diversity, helping shed light on the opportunities and challenges in the nanoelectronics era.
Book Synopsis Design and Modeling of Non-uniformly Doped Deep-submicron Pocket Mosfets for Low-voltage Low-power Applications (PHD). by : Yon Sup Pang
Download or read book Design and Modeling of Non-uniformly Doped Deep-submicron Pocket Mosfets for Low-voltage Low-power Applications (PHD). written by Yon Sup Pang and published by . This book was released on 2000 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Mosfet Modeling for VLSI Simulation by : Narain Arora
Download or read book Mosfet Modeling for VLSI Simulation written by Narain Arora and published by World Scientific Publishing Company Incorporated. This book was released on 2007 with total page 605 pages. Available in PDF, EPUB and Kindle. Book excerpt: A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology.
Book Synopsis Technology Computer Aided Design by : Chandan Kumar Sarkar
Download or read book Technology Computer Aided Design written by Chandan Kumar Sarkar and published by CRC Press. This book was released on 2018-09-03 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt: Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
Book Synopsis Statistical Methodologies for Modelling the Impact of Process Variability in Ultra-deep-submicron SRAMs by : Kaya Can Akyel
Download or read book Statistical Methodologies for Modelling the Impact of Process Variability in Ultra-deep-submicron SRAMs written by Kaya Can Akyel and published by . This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The downscaling of device geometry towards its physical limits exacerbates the impact of the inevitable atomistic phenomena tied to matter granularity. In this context, many different variability sources raise and affect the electrical characteristics of the manufactured devices. The variability-aware design methodology has therefore become a popular research topic in the field of digital circuit design, since the increased number of transistors in the modern integrated circuits had led to a large statistical variability affecting dramatically circuit functionality. Static Random Access Memory (SRAM) circuits which are manufactured with the most aggressive design rules in a given technology node and contain billions of transistor, are severely impacted by the process variability which stands as the main obstacle for the further reduction of the bitcell area and of its minimum operating voltage. The reduction of the latter is a very important parameter for Low-Power design, which is one of the most popular research fields of our era. The optimization of SRAM bitcell design therefore has become a crucial task to guarantee the good functionality of the design at an industrial manufacturing level, in the same time answering to the high density and low power demands. However, the long time required by each new technology node process development means a long waiting time before obtaining silicon results, which is in cruel contrast with the fact that the design optimization has to be started as early as possible. An efficient SPICE characterization methodology for the minimum operating voltage of SRAM circuits is therefore a mandatory requirement for design optimization. This research work concentrates on the development of the new simulation methodologies for the modeling of the process variability in ultra-deep-submicron SRAMs, with the ultimate goal of a significantly accurate modeling of the minimum operating voltage Vmin. A particular interest is also carried on the time-dependent sub-class of the process variability, which appears as a change in the electrical characteristics of a given transistor during its operation and during its life-time. This research work has led to many publications and one patent application. The majority of findings are retained by STMicroelectronics SRAM development team for a further use in their design optimization flow.
