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Download or read book Spin and Magnetotransport Properties of Narrow Gap Semiconductors written by and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ben Murdin
Publisher : Springer Science & Business Media
ISBN 13 : 1402084250
Total Pages : 195 pages
Book Rating : 4.4/5 (2 download)
Download or read book Narrow Gap Semiconductors 2007 written by Ben Murdin and published by Springer Science & Business Media. This book was released on 2008-11-30 with total page 195 pages. Available in PDF, EPUB and Kindle. Book excerpt: Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics. The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors.
Author : Xingyuan Pan
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (747 download)
Download or read book Magneto-optical Properties of Narrow-gap Semiconductor Heterostructures written by Xingyuan Pan and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: Next generation of semiconductor device will not only based on the charge transport properties of the carrier, but also their spin degree of freedom. In order to understand or predict how those devices work one need to understand the spin-dependent electronic structures of both bulk and low-dimensional semiconductors. We have theoretically studied the spin-dependent Landau levels for electrons or holes in bulk GaAs system and AlInSb/InSb multiple quantum wells system. We use the envelope function approximation for the electronic and magneto-optical properties of AlInSb/InSb superlattices. Our model includes the conduction electrons, heavy holes, light holes and the split-off holes for a total of 8 bands when spin is taken into account. It is a generalization of the Pidgeon-Brown model to include the wave vector dependence of the electronic states, as well as quantization of wave vector due to multiple quantum well superlattice effects. In addition, we take strain effects into account by assuming pseudomorphic growth conditions. For bulk GaAs system, we calculated the spin-dependent absorption coefficients which can be directly compared with the optically pumped NMR experiment. We show that the optically pumped NMR is a complimentary tool to traditional magneto optical absorption measurement, in the sense that optically pumped NMR is more sensitive to the light hole transitions which are very hard to resolve in the traditional magneto absorption measurement. For the AlInSb/InSb multiple quantum well system, we calculated both the magneto absorption spectra and 10 the cyclotron resonance spectra. We compare both spectra to experimental results and achieve a good agreement. This agreement assures us that our understanding of the valence band structure of the narrow gap InSb materials are correct.
Author : Junichiro Kono
Publisher : CRC Press
ISBN 13 : 148226921X
Total Pages : 636 pages
Book Rating : 4.4/5 (822 download)
Download or read book Narrow Gap Semiconductors written by Junichiro Kono and published by CRC Press. This book was released on 2006-05-25 with total page 636 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume forms a solid presentation in several important areas of NGS research, including materials, growth and characterization, fundamental physical phenomena, and devices and applications. It examines the novel material of InAs and its related alloys, heterostructures, and nanostructures as well as more traditional NGS materials such as InSb, PbTe, and HgCdTe. Several chapters cover carbon nanotubes and spintronics, along with spin-orbit coupling, nonparabolicity, and large g-factors. The book also deals with the physics and applications of low-energy phenomena at the infrared and terahertz ranges.
Author : Mehdi Pakmehr
Publisher :
ISBN 13 :
Total Pages : 130 pages
Book Rating : 4.:/5 (974 download)
Download or read book Probing Spin and Spin-orbit Coupling Effects in Narrow-gap Semiconductor Nano-structures by THz Magneto-photoresponse Spectroscopy and Magneto-transport Measurements written by Mehdi Pakmehr and published by . This book was released on 2015 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using the spin degree of freedom in a emergent field Known as Spintronics has motivated scientist in different disciplines including physicist within last 10 years. Due to different interaction mechanisms which affects the physical behavior of spin (eg its state and transport properties) within solid medium (Semiconductors in our case), one needs to distinguish these mechanisms and their importance for making any practical spin based devices. For example the idea of making spin based transistors with electrons being transported within InGaAs and their spin state is being controlled by Rashba type field has been around for around 25 years but injection of spin polarized currents from a source into the channel has not been solved yet. Spin orbit coupling (SOC) is one of the mechanisms which changes the spin state of electrons and avoid the existence of pure spin state as a favorable one from device point of view. SOC could have a different origin depending on material type or structure of device. One method of measuring and quantifying this mechanisms within semiconductor nanostructures is through measuring the parameters known as Lande g-factor. This parameters turns out to be a promising one to probe different effects on electronic band structure including quantum confinement, strain, electric filed, etc. We probe a combination of these effects (SOC, Strain, band mixing, etc) by measuring different g-factor tensor components of narrow gap Zinc blend semiconductor nanostructures which we hope finally serve to the purpose of making reliable spin based devices* (Spintronics). To reach this goal we have developed and implemented THz magneto-Photoresponse spectroscopy in conjunction with magneto-transport measurements at cryogenic temperatures. The samples include InAs and HgTe based Quantum wells as well as InAs based quantum point contact. Our findings clarify the situation where the combination of SOC, Strain, quantum confinements as well as many body electron effect changes different physical parameters of charge carriers (eg m*, g-factor, [alpha], etc) within the channel of transport for specific samples. Specifically the anisotropy of g-factor tensor as well as normal-to-plane component of g-factor tensor enhancement due to exchange many body effects will be discussed in chapter 4 and 5. We hope that our finding open a way for further characterization and investigation of electron properties within narrow gap based nanostructures at the quantum transport regime, including Paramagnetic spin resonance (EPR), and even detection of Majorana Fermion in hybrid superconductors/semiconductors devices.
Author : David L. Carter
Publisher : Pergamon
ISBN 13 :
Total Pages : 594 pages
Book Rating : 4.:/5 (37 download)
Download or read book The Physics of Semimetals and Narrow-gap Semiconductors written by David L. Carter and published by Pergamon. This book was released on 1971 with total page 594 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J.L Reno
Publisher : CRC Press
ISBN 13 : 1000112403
Total Pages : 401 pages
Book Rating : 4.0/5 (1 download)
Download or read book Narrow Gap Semiconductors 1995 written by J.L Reno and published by CRC Press. This book was released on 2020-11-25 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.
Author : Ben Murdin
Publisher : Springer
ISBN 13 : 9789048119929
Total Pages : 216 pages
Book Rating : 4.1/5 (199 download)
Download or read book Narrow Gap Semiconductors 2007 written by Ben Murdin and published by Springer. This book was released on 2009-08-29 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics. The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors.
Author :
Publisher :
ISBN 13 :
Total Pages : 374 pages
Book Rating : 4.0/5 ( download)
Download or read book Narrow-gap Semiconductors and Related Materials written by and published by . This book was released on 1990 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Magnetic and Transport Properties of the Narrow-gap Semiconductor Yb5Si4 written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : M. Averous
Publisher : Springer Science & Business Media
ISBN 13 : 1461537762
Total Pages : 278 pages
Book Rating : 4.4/5 (615 download)
Download or read book Semimagnetic Semiconductors and Diluted Magnetic Semiconductors written by M. Averous and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semimagnetic semiconductors (SMSC) and diluted magnetic semiconductors (DMS) have in the past decade attracted considerable attention because they confer many new physical properties on both bulk materials and heterostructures. These new effects are due either to exchange interactions between magnetic moments on magnetic ions, or to exchange interactions between magnetic moments and the spin of the charge carrier. These effects vary with the transition metal (Mn, Fe, Co) or rare earth (Eu, Gd, etc) used and thus provide a range of different situations. The field is very large (zero gap, small gap, wide gap), and the magnetic properties also are very rich (paramagnetic spin glass, antiferromagnetism). These materials are very convenient for studying the magnetism (the magnetism is diluted) or the superlattices (SL) with a continuous change from type II SL to type III SL. This Course attempted to provide a complete overview of the topic. The participants of this summer school held in Erice came from ten countries and were from various backgrounds and included theoreticians, experimentalists, physicists, and chemists. Consequently, an attempt was made to make the Course as thorough as possible, but at the same time attention was devoted to basic principles. The lecturers, drawn from all the groups in the world involved in the field, were asked to be very didactic in their presentation. After two introductory lectures, Dr.
Author : Mukesh Kumar Jain
Publisher : World Scientific
ISBN 13 : 9789810201760
Total Pages : 682 pages
Book Rating : 4.2/5 (17 download)
Download or read book Diluted Magnetic Semiconductors written by Mukesh Kumar Jain and published by World Scientific. This book was released on 1991 with total page 682 pages. Available in PDF, EPUB and Kindle. Book excerpt: This review volume presents both basic and applied aspects of diluted magnetic semiconductors (DMS). The term DMS applies generally to semiconductors in which a fraction of its constituent ions are replaced by magnetic ions. This book is only the second to review DMS materials. It presents a detailed treatment of the current state of knowledge of the established properties of DMS in the form of single crystals, quantum wells and superlattices. It also brings together recent work on new DMS materials and presents discussions on a wide range of possible DMS applications.
Author : Jacek K. Furdyna
Publisher :
ISBN 13 :
Total Pages : 502 pages
Book Rating : 4.3/5 (91 download)
Download or read book Diluted Magnetic Semiconductors written by Jacek K. Furdyna and published by . This book was released on 1988 with total page 502 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Dipta Saha
Publisher :
ISBN 13 :
Total Pages : 123 pages
Book Rating : 4.:/5 (97 download)
Download or read book Magneto-Optical Properties of Narrow Gap Semiconductor Nanostructures written by Dipta Saha and published by . This book was released on 2014 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: The calculations of CR spectra, valence Landau suband structure, and average z component of the spins explain the differences between the CR measurements that are observed in molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) samples, and the higher Curie temperature in the MOVPE structures. In the OPNMR experiments on AlGaAs/GaAs MQW, the sign change of the calculated electron spin polarization agrees with the sign change of the OPNMR signal. This sign change has not been observed in bulk GaAs. The strain effect and density of states in the strained MQW are responsible for this sign change. The calculated magneto-absorption with biaxial strain effects included more accurately reproduces the experimental results of AlInSb/InSb parabolic MQW. Comparing the results with that of the AlInSb/InSb square MQW indicates that the shape of the confinement affects the magneto-absorption significantly.
Author : Kazuto Akiba
Publisher : Springer
ISBN 13 : 9811371075
Total Pages : 147 pages
Book Rating : 4.8/5 (113 download)
Download or read book Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions written by Kazuto Akiba and published by Springer. This book was released on 2019-04-04 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurements using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe). The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe. The overviews on BP and PbTe from the point of view of material properties help readers quickly understand the typical electronic character of narrow-gap semiconductor materials, which has recently attracted interest in topological features in condensed matter physics. Additionally the introductory review of the principles and methodology allows readers to understand the high magnetic field and pressure experiments.
Author : Martin Kneip
Publisher : GRIN Verlag
ISBN 13 : 364026830X
Total Pages : 282 pages
Book Rating : 4.6/5 (42 download)
Download or read book Magnetization Dynamics in Diluted Magnetic Semiconductor Heterostructures written by Martin Kneip and published by GRIN Verlag. This book was released on 2009-02 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: Doctoral Thesis / Dissertation from the year 2008 in the subject Physics - Theoretical Physics, grade: sehr gut (1,0), University of Dortmund, 550 entries in the bibliography, language: English, abstract: In this thesis spin dynamics in (Zn, Mn)Se/(Zn, Be)Se and (Cd, Mn)Te/(Cd, Mg)Te DMS quantum well heterostructures with a type-I band alignment are studied, where the carriers are quantum confined. Especially the important role of free carriers in heating of the Mn-system, by its interaction with photoexcited carriers with excess kinetic energy, and in the cooling of the Mn-system in the presence of cold background carriers, provided by modulation doping, is established. The studies are separated in three chapters. In the fourth chapter of this thesis, new results on energy and spin transfer between free carriers and Mn-ion system are presented. Contributions of direct heating of the Mn-system by photocarriers and indirect heating via nonequilibrium phonons are distinguished and their competition is discussed. In the fifth chapter dynamics of spin-lattice relaxation of magnetic Mn-ions in DMS QW heterostructures is investigated and new experimental studies on (Zn, Mn)Se/(Zn, Be)Se heterostructures are shown. Crucial for spintronic devices is the ability to tune the spin relaxation time precisely, as the spin relaxation time is important in double respects. On the one hand spin polarization must be conserved over long times and distances, if the spin shall be processed or stored in a region, which is spatial separated from the spin-injector. Especially for the possibility of utilizing spins as quantum bits for quantum information processing, long spin polarization is needed. On the other hand short spin relaxation time is needed for fast switching between different spin-states. For instance semiconductor lasers can be switched off extremely fast by reorientation of spin. This very relevant topic is devoted the sixth chapter, before the thesis is summarized in the las
Author : Neil James Bassom
Publisher :
ISBN 13 :
Total Pages : 280 pages
Book Rating : 4.:/5 (535 download)
Download or read book Magnetotransport Studies of Space Charge Layers in Narrow-gap Semiconductors written by Neil James Bassom and published by . This book was released on 1991 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
