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Some Factors Affecting The Growth Of Beta Silicon Carbide
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Book Synopsis Some Factors Affecting the Growth of Beta Silicon Carbide by : Charles Edward Ryan
Download or read book Some Factors Affecting the Growth of Beta Silicon Carbide written by Charles Edward Ryan and published by . This book was released on 1966 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report discusses the growth of beta silicon carbide by the hydrogen reduction of methyl trichlorine onto carbon substrates at 1500C. It is shown that alpha inclusions present are the rare 2H (Wurtzite) modification of silicon carbide and that their presence resulted from a vapor-liquid-solid growth mechanism which was dominated by impurities in the substrate. By carefully cleaning the substrate and purifying the methyltrichlorosilane, the alpha inclusions were eliminated. The 2H alpha crystals were then deliberately grown by introducing selected impurities locally on the substrate. Beta crystals were also intentionally grown by the vapor-liquid-solid technique by introducing appropriate impurities. Growth of beta silicon carbide from the melt is also briefly discussed. (Author).
Book Synopsis Some Factors Affecting the Growth of Beta Silicon Carbide by : Charles E. Ryan
Download or read book Some Factors Affecting the Growth of Beta Silicon Carbide written by Charles E. Ryan and published by . This book was released on 1966 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report discusses the growth of beta silicon carbide by the hydrogen reduction of methyl trichlorine onto carbon substrates at 1500C. It is shown that alpha inclusions present are the rare 2H (Wurtzite) modification of silicon carbide and that their presence resulted from a vapor-liquid-solid growth mechanism which was dominated by impurities in the substrate. By carefully cleaning the substrate and purifying the methyltrichlorosilane, the alpha inclusions were eliminated. The 2H alpha crystals were then deliberately grown by introducing selected impurities locally on the substrate. Beta crystals were also intentionally grown by the vapor-liquid-solid technique by introducing appropriate impurities. Growth of beta silicon carbide from the melt is also briefly discussed. (Author).
Book Synopsis Electron Optical Studies of Heteroepitaxial Growth of Beta Silicon Carbide Layers Through Molten Metal Intermediates by : Joseph J. Comer
Download or read book Electron Optical Studies of Heteroepitaxial Growth of Beta Silicon Carbide Layers Through Molten Metal Intermediates written by Joseph J. Comer and published by . This book was released on 1970 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt: Beta silicon carbide has the potential of becoming an important semiconductor device material for hazardous military environments such as high temperature and radiation. This report is concerned with a study of the growth of thin single crystal films of beta silicon carbide through molten metal intermediates. Thin films of nickel, cobalt, chromium and iron were deposited by vacuum deposition on to the (0001) faces of single crystals of alpha silicon carbide. Then heteroepitaxial layers of beta silicon carbide were deposited through the molten metal films by the hydrogen reduction of methyltrichlorosilane. The deposited films were studied by electron microscopy, electron diffraction and electron beam microprobe analysis to determine the growth mechanism and to arrive at optimum conditions for heteroepitaxial growth. From the results obtained it was concluded that nickel and cobalt were equally effective in promoting epitaxial growth. Films of nickel only 20A in thickness were as effective as those up to 300A. Results with chromium and iron were disappointing for different reasons. Chromium did not etch the substrate surface uniformly because of poor wetting. With iron, whisker growth of beta silicon carbide occurred at the surface. Although in many respects the growth of mechanism resembled that of the vapor-liquid-solid method, certain differences were observed which make the actual growth mechanism using nickel and cobalt films still uncertain. (Author).
Book Synopsis The Growth of P-type Beta Silicon Carbide (β-SIC) Films Grown by CVD on Off-axis and On-axis (100) Silicon by : Crawford Edward Taylor
Download or read book The Growth of P-type Beta Silicon Carbide (β-SIC) Films Grown by CVD on Off-axis and On-axis (100) Silicon written by Crawford Edward Taylor and published by . This book was released on 1994 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A Review of Candidate Techniques for the Growth of Beta Silicon Carbide Single Crystals by : Erh-Nan Chou
Download or read book A Review of Candidate Techniques for the Growth of Beta Silicon Carbide Single Crystals written by Erh-Nan Chou and published by . This book was released on 1984 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Bulk Growth of Single Crystalline Beta-silicon Carbide from High Temperature Solutions by : Charles Eric Hunter
Download or read book Bulk Growth of Single Crystalline Beta-silicon Carbide from High Temperature Solutions written by Charles Eric Hunter and published by . This book was released on 1985 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of Beta Silicon Carbide in a Reduced Pressure Chemical Vapor Deposition System by : Gladys Felton
Download or read book Growth of Beta Silicon Carbide in a Reduced Pressure Chemical Vapor Deposition System written by Gladys Felton and published by . This book was released on 1986 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide — 1968 by : H. K. Henisch
Download or read book Silicon Carbide — 1968 written by H. K. Henisch and published by Elsevier. This book was released on 2013-10-22 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide — 1968 presents the proceedings of the International Conference on Silicon Carbide held in University Park, Pennsylvania on October 20-23, 1968. The book covers papers about the perspectives on silicon carbide; several problems in the development of silicon carbide semiconductors, such as the control of crystal structure and analysis. The thermal properties of beta-silicon carbide from 20 to 2000 degrees and the influence of impurities on the growth of silicon carbide crystals in chemical reactions and by recrystallization are also discussed. The book then presents papers about silicon carbide single crystal growth using the Norton process; the principles of solution and traveling solvent growth of silicon carbide; the growth of silicon carbide from cobalt-silicon solutions; and the growth of silicon carbide from vapor by the Bridgman-Stockbarger method. Papers about the growth of crystals and epitaxial layers of beta silicon carbide; the heteroepitaxy of beta-silicon carbide employing liquid metals; some aspects of disorder in silicon carbide; and the dependence of physical properties on polytype structure are also considered. The book describes topics about the optical properties of polytypes of silicon carbide as well as the phase stability of silicon carbide against nitrogen. Other papers about the physical and electronic properties of silicon carbide are also discussed in the book. People involved in semiconductor industries will find the book helpful.
Book Synopsis The Growth of P-type Beta Silicon Carbide ([beta]-SIC) Films Grown by CVD on Off-axis and On-axis (100) Silicon by : Crawford Edward Taylor
Download or read book The Growth of P-type Beta Silicon Carbide ([beta]-SIC) Films Grown by CVD on Off-axis and On-axis (100) Silicon written by Crawford Edward Taylor and published by . This book was released on 1994 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Growth and Characterization of Beta Silicon Carbide ([beta]-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor by : Kenneth George Irvine
Download or read book The Growth and Characterization of Beta Silicon Carbide ([beta]-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor written by Kenneth George Irvine and published by . This book was released on 1992 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book NASA Technical Note written by and published by . This book was released on 1972 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Growth and Characterization of Beta Silicon Carbide (β-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor by : Kenneth George Irvine
Download or read book The Growth and Characterization of Beta Silicon Carbide (β-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor written by Kenneth George Irvine and published by . This book was released on 1992 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1988 with total page 1020 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of 2H Silicon Carbide Crystals by : J. Anthony Powell
Download or read book Growth of 2H Silicon Carbide Crystals written by J. Anthony Powell and published by . This book was released on 1969 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of Beta-silicon Carbide Thin Films by : Bagher Bahavar
Download or read book Growth and Characterization of Beta-silicon Carbide Thin Films written by Bagher Bahavar and published by . This book was released on 1993 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Conversion of Cubic to Hexagonal Silicon Carbide as a Function of Temperature and Pressure by : Charles Edward Ryan
Download or read book The Conversion of Cubic to Hexagonal Silicon Carbide as a Function of Temperature and Pressure written by Charles Edward Ryan and published by . This book was released on 1967 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Technical Abstract Bulletin by : Defense Documentation Center (U.S.)
Download or read book Technical Abstract Bulletin written by Defense Documentation Center (U.S.) and published by . This book was released on 1967 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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