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Author : Tilghman Lee Rittenhouse
Publisher :
ISBN 13 :
Total Pages : 180 pages
Book Rating : 4.:/5 (427 download)
Download or read book Single Crystal Growth and Characterization of Silicon Germanium Alloys written by Tilghman Lee Rittenhouse and published by . This book was released on 1999 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Binod Kumar Dugar
Publisher :
ISBN 13 :
Total Pages : 224 pages
Book Rating : 4.:/5 (557 download)
Download or read book Growth and Characterization of Single Crystal Silicon-germanium Alloy written by Binod Kumar Dugar and published by . This book was released on 1978 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gudrun Kissinger
Publisher : CRC Press
ISBN 13 : 1466586648
Total Pages : 436 pages
Book Rating : 4.4/5 (665 download)
Download or read book Silicon, Germanium, and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
Author : Gudrun Kissinger
Publisher : CRC Press
ISBN 13 : 1466586656
Total Pages : 424 pages
Book Rating : 4.4/5 (665 download)
Download or read book Silicon, Germanium, and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic
Author : S. Pantellides
Publisher : CRC Press
ISBN 13 : 9781560329633
Total Pages : 552 pages
Book Rating : 4.3/5 (296 download)
Download or read book Silicon-Germanium Carbon Alloys written by S. Pantellides and published by CRC Press. This book was released on 2002-07-26 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials
Author : Hwei Yin Serene Koh
Publisher : Stanford University
ISBN 13 :
Total Pages : 238 pages
Book Rating : 4.F/5 ( download)
Download or read book Rapid Melt Growth of Silicon Germanium for Heterogeneous Integration on Silicon written by Hwei Yin Serene Koh and published by Stanford University. This book was released on 2011 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon has made modern integrated circuit technology possible. As MOSFET gate lengths are scaled to 22nm and beyond, it has become apparent that new materials must be introduced to the silicon-based CMOS process for improved performance and functionality. This dissertation begins with a review of the MOSFET leakage current problem and presents one potential solution: Band-to-Band Tunneling (BTBT) transistors, which have the potential for steeper subthreshold slopes because they do not have the fundamental 'kT/q' limit in the rate at which conventional MOSFETs can be turned on or off. It is clear that these devices must be fabricated in materials with smaller bandgaps for improved performance. Silicon Germanium (SiGe) is one possible material system that could be used to fabricate enhanced BTBT transistors. Rapid Melt Growth (RMG) is a technique that has been used to recrystallize materials on Si substrates. RMG, however, has not previously been applied to SiGe, a binary alloy with large separation in the liquidus-solidus curve in its phase diagram. The development of process and experimental results for obtaining SiGe-on-insulator (SGOI) from bulk Si substrates through RMG are presented. The theory of RMG is analyzed and compositional profiles obtained during RMG of SiGe are modeled to understand why we were able to obtain high quality lateral compositionally graded SGOI substrates. The success of RMG SiGe suggests that the RMG technique can also be applied to III-V ternary and quaternary compounds with similar pseudo-binary phase diagrams. This opens up a wide range of material possibilities with the potential for novel applications in heterogeneous integration and 3-D device technology.
Author : Y. Shiraki
Publisher : Elsevier
ISBN 13 : 0857091425
Total Pages : 649 pages
Book Rating : 4.8/5 (57 download)
Download or read book Silicon-Germanium (SiGe) Nanostructures written by Y. Shiraki and published by Elsevier. This book was released on 2011-02-26 with total page 649 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices. With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. Reviews the materials science of nanostructures and their properties and applications in different electronic devices Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition
Author : Hao Mei
Publisher :
ISBN 13 :
Total Pages : 122 pages
Book Rating : 4.:/5 (124 download)
Download or read book High-purity Germanium Crystal Growth and Characterization written by Hao Mei and published by . This book was released on 2015 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : A. Borghesi
Publisher : Newnes
ISBN 13 : 044459633X
Total Pages : 580 pages
Book Rating : 4.4/5 (445 download)
Download or read book C, H, N and O in Si and Characterization and Simulation of Materials and Processes written by A. Borghesi and published by Newnes. This book was released on 2012-12-02 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.
Author : Wolfgang Skorupa
Publisher : Springer Science & Business Media
ISBN 13 : 3319031317
Total Pages : 330 pages
Book Rating : 4.3/5 (19 download)
Download or read book Subsecond Annealing of Advanced Materials written by Wolfgang Skorupa and published by Springer Science & Business Media. This book was released on 2013-12-16 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: The thermal processing of materials ranges from few fem to seconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Special emphasis is given on the diffusion and segregation of impurity atoms during thermal treatment. A broad range of examples describes the solid phase and/or liquid phase processing of elemental and compound semiconductors, dielectric composites and organic materials.
Author :
Publisher :
ISBN 13 :
Total Pages : 552 pages
Book Rating : 4.:/5 (3 download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1986 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Mandeep Sekhon
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (98 download)
Download or read book Numerical Simulation of Growth of Silicon Germanium Single Crystals written by Mandeep Sekhon and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: SixGe1-x is a promising alloy semiconductor material that is gaining importance in the semiconductor industry primarily due to the fact that silicon and germanium form a binary isomorphous system and hence its properties can be adapted to suit the needs of a particular application. Liquid phase diffusion (LPD) is a solution growth technique which has been successfully used to grow single crystals of SixGe1-x. The first part of this thesis discusses the development of a fixed grid solver to simulate the LPD growth under zero gravity condition. Initial melting is modeled in order to compute the shape of the initial growth interface along with temperature and concentration distribution. This information is then used by the solidification solver which in turn predicts the onset of solidification, evolution of the growth interface, and temperature and concentration fields as the solidification proceeds. The results are compared with the previous numerical study conducted using the dynamic grid approach as well as with the earth based experimental results. The predicted results are found to be in good qualitative agreement although certain noticeable differences are also observed owing to the absence of convective effects in the fixed grid model. The second part investigates the effects of crucible translation on the LPD technique using the dynamic grid approach. The case of constant pulling is examined first and compared with the available experimental results. Then a dynamic pulling profile obtained as a part of simulation process is used to achieve the goal of nearly uniform composition crystal. The effect of crucible translation on the interface shape, growth rate, and on the transport process is investigated. Finally, the effect of magnetic field on the LPD growth is examined.
Author :
Publisher : Springer Nature
ISBN 13 : 1461596181
Total Pages : 270 pages
Book Rating : 4.4/5 (615 download)
Download or read book Crystal Growth Bibliography written by and published by Springer Nature. This book was released on 1981 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : S. Margalit
Publisher :
ISBN 13 :
Total Pages : 14 pages
Book Rating : 4.:/5 (744 download)
Download or read book Growth of Silicon-germanium Single Crystals written by S. Margalit and published by . This book was released on 1971 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Golla Eranna
Publisher : CRC Press
ISBN 13 : 1482232812
Total Pages : 432 pages
Book Rating : 4.4/5 (822 download)
Download or read book Crystal Growth and Evaluation of Silicon for VLSI and ULSI written by Golla Eranna and published by CRC Press. This book was released on 2014-12-08 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.
Author :
Publisher :
ISBN 13 :
Total Pages : 456 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author : Ricardo Jaramillo
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (11 download)
Download or read book Single Crystal Growth and Analysis of Germanium written by Ricardo Jaramillo and published by . This book was released on 1989 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
