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Silicon Oxidation And Sio2 Interface Of Thin Oxides
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Book Synopsis Silicon Oxidation and SiO2 Interface of Thin Oxides by : N. M. Ravindra
Download or read book Silicon Oxidation and SiO2 Interface of Thin Oxides written by N. M. Ravindra and published by . This book was released on 1986 with total page 18 pages. Available in PDF, EPUB and Kindle. Book excerpt: High Resolution Transmission Electron Microscopy (HRTEM) and ellipsometry techniques have been employed to measure thicknesses of silicon oxide, grown at 800 C in dry oxygen, in the thickness range of 2 to 20 nm. While the oxide growth data measured from TEM obey a linear behavior, those obtained from ellipsometry are seen to follow a linear-parabolic law. The interface structure as function of the increasing oxide thickness was studied using HRTEM. At these oxidation temperatures, we do not see the earlier reported systematic dependence of roughness at the interface on the oxide thickness for oxides grown at 900 C. Attempts aimed at correlating the high resolution transmission electron micrographs with some physical parameters like the refractive index and the dielectric breakdown lead us to considerations of the importance of the effect of protrusions of silicon atoms of 1nm size into SiO2 layers on the interface properties. These findings lead us to explain some key features concerning the refractive index, density and dielectric strength of thin SiO2.
Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 by : B.E. Deal
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Book Synopsis Fundamental Aspects of Silicon Oxidation by : Yves J. Chabal
Download or read book Fundamental Aspects of Silicon Oxidation written by Yves J. Chabal and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.
Download or read book The Si-SiO2 System written by P. Balk and published by Elsevier Publishing Company. This book was released on 1988 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Si-SiO 2 system has been the subject of concentrated research for over 25 years, particularly because of its key role in silicon integrated circuits. However, only a few comprehensive treatises on this field have been published in recent years. This book focuses on the materials science and technology aspects of the system. Its aim is to give a comprehensive overview of the topic, including an extensive list of references giving easy access to the literature. After an introductory chapter which reviews the Si-SiO 2 system from the perspective of other semiconductor-insulator combinations of technical interest, the technology of oxide preparation is discussed. Fundamental questions regarding the structure and chemistry of the interfacial region are then addressed. Two chapters are concerned with system properties: one deals with the physico-chemical, electrical and device-related characteristics and the way these are affected by the technology of oxide preparation; a second chapter focuses on point defects and charge trapping. The book concludes with a broad review of the techniques available for electrical characterization of the system, including the physical background.
Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996 by : Hisham Z. Massoud
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996 written by Hisham Z. Massoud and published by . This book was released on 1996 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical Characterization of Si-Sio2 Interface for Thin Oxides by : 洪國光
Download or read book Electrical Characterization of Si-Sio2 Interface for Thin Oxides written by 洪國光 and published by . This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Electrical Characterization of Si-SiO2 Interface for Thin Oxides" by 洪國光, Kwok-kwong, Hung, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3123086 Subjects: Silicon - Electric properties Silicon oxide films
Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000 by : Hisham Z. Massoud
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000 written by Hisham Z. Massoud and published by . This book was released on 2000 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices by : Eric Garfunkel
Download or read book Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices written by Eric Garfunkel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
Book Synopsis The Physics and Technology of Amorphous SiO2 by : Roderick A.B. Devine
Download or read book The Physics and Technology of Amorphous SiO2 written by Roderick A.B. Devine and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized Si0 and progressing 2 towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiOz and in particular, buried oxide layers formed by ion implantation. Although every effort was made at the conference to ensure that each presentation occured in its most obvious session, in editing the proceedings we have taken the liberty of changing the order where it seems that a paper was in fact more appropriate to an alternative section. In any event, because of the natural overlap of subjects, many papers could have been suitably placed in several different sections.
Book Synopsis Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface by : E. A. Irene
Download or read book Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface written by E. A. Irene and published by . This book was released on 1988 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: The formation of the thin silicon dioxide (SiO2) films via thermal oxidation on single crystal silicon substrates has been found to depend on the method of Si cleaning, impurities on the Si surface, the Si crystal orientation, film stress, and the availability of electrons at the Si surface. Recent studies on these topics are recounted along with a framework for understanding. No fully acceptable model for thin Si02 formation yet exists, but recent studies lead in new directions towards this goal.
Author :Electrochemical Society. Meeting Publisher :The Electrochemical Society ISBN 13 :9781566773478 Total Pages :652 pages Book Rating :4.7/5 (734 download)
Book Synopsis Silicon Nitride and Silicon Dioxide Thin Insulating Films VII by : Electrochemical Society. Meeting
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films VII written by Electrochemical Society. Meeting and published by The Electrochemical Society. This book was released on 2003 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low-Temperature Oxidation by : Francis P. Fehlner
Download or read book Low-Temperature Oxidation written by Francis P. Fehlner and published by Wiley-Interscience. This book was released on 1986 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: An interdisciplinary study of the corrosion of metals that emphasizes the role of oxide structure in interpreting oxidation kinetics of metals and semiconductors. Covers low temperature oxidation, silicon oxidation, structure of vitreous oxides, transport processes in vitreous oxides, and oxide films. Index.
Book Synopsis The Surface Properties of Oxidized Silicon by : Else Kooi
Download or read book The Surface Properties of Oxidized Silicon written by Else Kooi and published by Springer. This book was released on 2013-12-21 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface by : B.E. Deal
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
Download or read book Oxide Reliability written by D. J. Dumin and published by World Scientific. This book was released on 2002 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents in summary the state of our knowledge of oxide reliability.
Author :Electrochemical Society. Dielectric Science and Technology Division Publisher :The Electrochemical Society ISBN 13 :9781566773133 Total Pages :304 pages Book Rating :4.7/5 (731 download)
Book Synopsis Silicon Nitride and Silicon Dioxide Thin Insulating Films by : Electrochemical Society. Dielectric Science and Technology Division
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by Electrochemical Society. Dielectric Science and Technology Division and published by The Electrochemical Society. This book was released on 2001 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical Characterization of Si-SiO2 Interface for Thin Oxides by : Kwok-kwong Hung
Download or read book Electrical Characterization of Si-SiO2 Interface for Thin Oxides written by Kwok-kwong Hung and published by . This book was released on 1987 with total page 586 pages. Available in PDF, EPUB and Kindle. Book excerpt:
