Silicon Germanium Bicmos And Silicon On Insulator Cmos Analog Circuits For Extreme Environment Applications

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Silicon-germanium BiCMOS and Silicon-on-insulator CMOS Analog Circuits for Extreme Environment Applications

Author : Troy Daniel England
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (893 download)

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Book Synopsis Silicon-germanium BiCMOS and Silicon-on-insulator CMOS Analog Circuits for Extreme Environment Applications by : Troy Daniel England

Download or read book Silicon-germanium BiCMOS and Silicon-on-insulator CMOS Analog Circuits for Extreme Environment Applications written by Troy Daniel England and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Extreme environments pose major obstacles for electronics in the form of extremely wide temperature ranges and hazardous radiation. The most common mitigation procedures involve extensive shielding and temperature control or complete displacement from the environment with high costs in weight, power, volume, and performance. There has been a shift away from these solutions and towards distributed, in-environment electronic systems. However, for this methodology to be viable, the requirements of heavy radiation shielding and temperature control have to be lessened or eliminated. This work gained new understanding of the best practices in analog circuit design for extreme environments. Major accomplishments included the over-temperature -180 C to +120 C and radiation validation of the SiGe Remote Electronics Unit, a first of its kind, 16 channel, sensor interface for unshielded operation in the Lunar environment, the design of two wide-temperature ( -180 C to +120 C), total-ionizing-dose hardened, wireline transceivers for the Lunar environment, the low-frequency-noise characterization of a second-generation BiCMOS process from 300 K down to 90 K, the explanation of the physical mechanisms behind the single-event transient response of cascode structures in a 45 nm, SOI, radio-frequency, CMOS technology, the analysis of the single-event transient response of differential structures in a 32 nm, SOI, RF, CMOS technology, and the prediction of scaling trends of single-event effects in SOI CMOS technologies.

Silicon-germanium BiCMOS Device and Circuit Design for Extreme Environment Applications

Author : Ryan M. Diestelhorst
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (456 download)

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Book Synopsis Silicon-germanium BiCMOS Device and Circuit Design for Extreme Environment Applications by : Ryan M. Diestelhorst

Download or read book Silicon-germanium BiCMOS Device and Circuit Design for Extreme Environment Applications written by Ryan M. Diestelhorst and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-germanium (SiGe) BiCMOS technology platforms have proven invaluable for implementing a wide variety of digital, RF, and mixed-signal applications in extreme environments such as space, where maintaining high levels of performance in the presence of low temperatures and background radiation is paramount. This work will focus on the investigation of the total-dose radiation tolerance of a third generation complementary SiGe:C BiCMOS technology platform. Tolerance will be quantified under proton and X-ray radiation sources for both the npn and pnp HBT, as well as for an operational amplifier built with these devices. Furthermore, a technique known as junction isolation radiation hardening will be proposed and tested with the goal of improving the SEE sensitivity of the npn in this platform by reducing the charge collected by the subcollector in the event of a direct ion strike. To the author's knowledge, this work presents the first design and measurement results for this form of RHBD.

Single-Photon Avalanche Diodes and Photon Counting Systems

Author : Marc Dandin
Publisher : Springer Nature
ISBN 13 : 3031643348
Total Pages : 195 pages
Book Rating : 4.0/5 (316 download)

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Book Synopsis Single-Photon Avalanche Diodes and Photon Counting Systems by : Marc Dandin

Download or read book Single-Photon Avalanche Diodes and Photon Counting Systems written by Marc Dandin and published by Springer Nature. This book was released on with total page 195 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment

Author : Denis Flandre
Publisher : Springer Science & Business Media
ISBN 13 : 1402030134
Total Pages : 358 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment by : Denis Flandre

Download or read book Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment written by Denis Flandre and published by Springer Science & Business Media. This book was released on 2006-05-06 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: This proceedings volume archives the contributions of the speakers who attended the NATO Advanced Research Workshop on “Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment” held at the Sanatorium Puscha Ozerna, th th Kyiv, Ukraine, from 25 to 29 April 2004. The semiconductor industry has maintained a very rapid growth during the last three decades through impressive technological achievements which have resulted in products with higher performance and lower cost per function. After many years of development semiconductor-on-insulator materials have entered volume production and will increasingly be used by the manufacturing industry. The wider use of semiconductor (especially silicon) on insulator materials will not only enable the benefits of these materials to be further demonstrated but, also, will drive down the cost of substrates which, in turn, will stimulate the development of other novel devices and applications. In itself this trend will encourage the promotion of the skills and ideas generated by researchers in the Former Soviet Union and Eastern Europe and their incorporation in future collaborations.

Design of Analog Circuits for Extreme Environment Applications

Author : Laleh Najafizadeh
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (642 download)

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Book Synopsis Design of Analog Circuits for Extreme Environment Applications by : Laleh Najafizadeh

Download or read book Design of Analog Circuits for Extreme Environment Applications written by Laleh Najafizadeh and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This work investigates the challenges associated with designing silicon-germanium (SiGe) analog and mixed-signal circuits capable of operating reliably in extreme environment conditions. Three extreme environment operational conditions, namely, operation over an extremely wide temperature range, operation at extremely low temperatures, and operation under radiation exposure, are considered. As a representative for critical analog building blocks, bandgap voltage reference (BGR) circuit is chosen. Several architectures of the BGRs are implemented in two SiGe BiCMOS technology platforms. The effects of wide-temperature operation, deep cryogenic operation, and proton and x-ray irradiation on the performance of BGRs are investigated. The impact of Ge profile shape on BGR's wide-temperature performance is also addressed. Single-event transient response of the BGR circuit is studied through microbeam experiments. In addition, proton radiation response of high-voltage transistors, implemented in a low-voltage SiGe platform, is investigated. A platform consisting of a high-speed comparator, digital-to-analog (DAC) converter, and a high-speed flash analog-to-digital (ADC) converter is designed to facilitate the evaluation of the extreme environment capabilities of SiGe data converters. Room temperature measurement results are presented and predictions on how temperature and radiation will impact their key electrical properties are provided.

Silicon Germanium

Author : Raminderpal Singh
Publisher : John Wiley & Sons
ISBN 13 : 0471660914
Total Pages : 368 pages
Book Rating : 4.4/5 (716 download)

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Book Synopsis Silicon Germanium by : Raminderpal Singh

Download or read book Silicon Germanium written by Raminderpal Singh and published by John Wiley & Sons. This book was released on 2004-03-15 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: "An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications." -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it." -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to: * Detail many of IBM's SiGe technology development programs * Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling * Discuss IBM's design automation and signal integrity knowledge and implementation methodologies * Illustrate design applications in a variety of IBM's SiGe technologies * Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe process technologies and design kits. "This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development." -Ron Wilson Silicon Engineering Editor, EETimes "This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods." -John Kelly Senior Vice President and Group Executive, Technology Group, IBM

Operation of SiGe BiCMOS Technology Under Extreme Environments

Author : Tianbing Chen
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (631 download)

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Book Synopsis Operation of SiGe BiCMOS Technology Under Extreme Environments by : Tianbing Chen

Download or read book Operation of SiGe BiCMOS Technology Under Extreme Environments written by Tianbing Chen and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Operation of SiGe BiCMOS Technology Under Extreme Environments Tianbing Chen 96 pages Directed by Dr. John D. Cressler "Extreme environment electronics" represents an important niche market and spans the operation of electronic components in surroundings lying outside the domain of conventional commercial, or even military specifications. Such extreme environments would include, for instance, operation to very low temperatures (e.g., to 77 K or even 4.2 K), operation to very high temperatures (e.g., to 200 C or even 300 C), and operation in a radiation-rich environment (e.g., space). The suitability of SiGe BiCMOS technology for extreme environment electronics applications is assessed in this work. The suitability of SiGe HBTs for use in high-temperature electronics applications is first investigated. SiGe HBTs are shown to exhibit sufficient current gain, frequency response, breakdown voltage, achieve acceptable device reliability, and improved low-frequency noise, at temperatures as high as 200-300 C.A comprehensive investigation of substrate bias effects on device performance, thermal properties, and reliability of vertical SiGe HBTs fabricated on CMOS-compatible, thin-film SOI, is presented. The impact of 63 MeV protons on these vertical SiGe HBTs fabricated on a CMOS-compatible SOI is then investigated. Proton irradiation creates G/R trap centers in SOI SiGe HBTs, creating positive charge at the buried oxide interface, effectively delaying the onset of the Kirk effect at high current density, which increases the frequency response of SOI SiGe HBTs following radiation. The thermodynamic stability of device-relevant epitaxial SiGe strained layers under proton irradiation is also investigated using x-ray diffraction techniques. Irradiation with 63 MeV protons is found to introduce no significant microdefects into the SiGe thin films, regardless of the starting stability condition of the SiGe film, and thus does not appear to be an issue for the use of SiGe HBT technology in emerging space systems. CMOS device reliability for emerging cryogenic space electronics applications is also assessed. CMOS device performance improves with cooling, however, CMOS device reliability becomes worse at decreased temperatures due to aggravated hot-carrier effects. The device lifetime is found to be a strong function of gate length, suggesting that design tradeoffs are inevitable.

Silicon-germanium Devices and Circuits for High Temperature Applications

Author : Dylan Buxton Thomas
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (668 download)

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Book Synopsis Silicon-germanium Devices and Circuits for High Temperature Applications by : Dylan Buxton Thomas

Download or read book Silicon-germanium Devices and Circuits for High Temperature Applications written by Dylan Buxton Thomas and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Using bandgap engineering, silicon-germanium (SiGe) BiCMOS technology effectively combines III-V transistor performance with the cost and integration advantages associated with CMOS manufacturing. The suitability of SiGe technology for cryogenic and radiation-intense environments is well known, yet SiGe has been generally overlooked for applications involving extreme high temperature operation. This work is an investigation into the potential capabilities of SiGe technology for operation up to 300°C, including the development of packaging and testing procedures to enable the necessary measurements. At the device level, SiGe heterojunction bipolar transistors (HBTs), field-effect transistors (FETs), and resistors are verified to maintain acceptable functionality across the temperature range, laying the foundation for high temperature circuit design. This work also includes the characterization of existing bandgap references circuits, redesign for high temperature operation, validation, and further optimization recommendations. In addition, the performance of temperature sensor, operational amplifier, and output buffer circuits under extreme high temperature conditions is presented. To the author's knowledge, this work represents the first demonstration of functional circuits from a SiGe technology platform in ambient temperatures up to 300°C; furthermore, the optimized bandgap reference presented in this work is believed to show the best performance recorded across a 500°C range in a bulk-silicon technology platform.

Silicon-germanium Devices and Circuits for Cryogenic and High-radiation Space Environments

Author : Edward Wilcox
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (668 download)

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Book Synopsis Silicon-germanium Devices and Circuits for Cryogenic and High-radiation Space Environments by : Edward Wilcox

Download or read book Silicon-germanium Devices and Circuits for Cryogenic and High-radiation Space Environments written by Edward Wilcox and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This work represents several years' research into the field of radiation hardening by design. The unique characteristics of a SiGe HBT, described in Chapter 1, make it ideally suitable for use in extreme environment applications. Chapter 2 describes the total ionizing dose effects experienced by a SiGe HBT, particularly those experienced on an Earth-orbital or lunar-surface mission. In addition, the effects of total dose are evaluated on passive devices. As opposed to the TID-hardness of SiGe transistors, a clear vulnerability to single-event effects does exist. This field is divided into three chapters. First, the very nature of single-event transients present in SiGe HBTs is explored in Chapter 3 using a heavy-ion microbeam with both bulk and SOI platforms [31]. Then, in Chapter 4, a new device-level SEU-hardening technique is presented along with circuit-design techniques necessarily for its implementation. In Chapter 5, the circuit-level radiation-hardening techniques necessarily to mitigate the effects shown in Chapter 3 are developed and tested [32]. Finally, in Chapter 6, the performance of the SiGe HBT in a cryogenic testing environment is characterized to understand how the widely-varying temperatures of outer space may affect device performance. Ultimately, the built-in performance, TID-tolerance, and now-developing SEU-hardness of the SiGe HBT make a compelling case for extreme environment electronics. The low-cost, high-yield, and maturity of Si manufacturing combine with modern bandgap engineering and modern CMOS to produce a high-quality, high-performance BiCMOS platform suitable for space-borne systems.

Applications of Silicon-Germanium Heterostructure Devices

Author : C.K Maiti
Publisher : CRC Press
ISBN 13 : 1420034693
Total Pages : 402 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Applications of Silicon-Germanium Heterostructure Devices by : C.K Maiti

Download or read book Applications of Silicon-Germanium Heterostructure Devices written by C.K Maiti and published by CRC Press. This book was released on 2001-07-20 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st

Frequency Synthesis Applications of SiGe BiCMOS Processes

Author : Stephen J. Horst
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (794 download)

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Book Synopsis Frequency Synthesis Applications of SiGe BiCMOS Processes by : Stephen J. Horst

Download or read book Frequency Synthesis Applications of SiGe BiCMOS Processes written by Stephen J. Horst and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Germanium BiCMOS technology has been demonstrated as an ideal platform for highly integrated systems requiring both high performance analog and RF circuits as well as large-scale digital functionality. Frequency synthesizers are ideal candidates for this technology because the mixed-signal nature of modern frequency synthesis designs fundamentally requires both digital and analog signal processing. This research targets three areas to improve SiGe frequency synthesizers. A majority of this work focuses on applying SiGe frequency synthesizers to extreme environment applications such as space, where low temperatures and ionizing radiation are significant design issues to contend with. A second focus area involves using SiGe HBTs to minimize noise in frequency synthesizer circuits. Improved low frequency "pink" noise in SiGe HBTs provide a significant advantage over CMOS devices, and frequency synthesis circuits are significantly affected by this type of noise. However, improving thermal "white" noise is also considered. Finally, an analysis of AM-PM distortion is considered for SiGe HBTs. The studies presented focus on identifying the physical mechanisms of observed phenomena, such as single event transients or phase noise characteristics in oscillators. The ultimate goal of this research is to provide a reference of effective design parameters for circuit and system designers seeking to take advantage of the properties of SiGe device physics.

Silicon-germanium Heterojunction Bipolar Transistors

Author : John D. Cressler
Publisher : Artech House
ISBN 13 : 9781580535991
Total Pages : 592 pages
Book Rating : 4.5/5 (359 download)

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Book Synopsis Silicon-germanium Heterojunction Bipolar Transistors by : John D. Cressler

Download or read book Silicon-germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.

SiGe Heterojunction Bipolar Transistors

Author : Peter Ashburn
Publisher : John Wiley & Sons
ISBN 13 : 0470090731
Total Pages : 286 pages
Book Rating : 4.4/5 (7 download)

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Book Synopsis SiGe Heterojunction Bipolar Transistors by : Peter Ashburn

Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.

ESD in Silicon Integrated Circuits

Author : E. Ajith Amerasekera
Publisher : John Wiley & Sons
ISBN 13 :
Total Pages : 434 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis ESD in Silicon Integrated Circuits by : E. Ajith Amerasekera

Download or read book ESD in Silicon Integrated Circuits written by E. Ajith Amerasekera and published by John Wiley & Sons. This book was released on 2002-05-22 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: * Examines the various methods available for circuit protection, including coverage of the newly developed ESD circuit protection schemes for VLSI circuits. * Provides guidance on the implementation of circuit protection measures. * Includes new sections on ESD design rules, layout approaches, package effects, and circuit concepts. * Reviews the new Charged Device Model (CDM) test method and evaluates design requirements necessary for circuit protection.

Silicon-on-Insulator Technology: Materials to VLSI

Author : J.-P. Colinge
Publisher : Springer Science & Business Media
ISBN 13 : 9781402077739
Total Pages : 392 pages
Book Rating : 4.0/5 (777 download)

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Book Synopsis Silicon-on-Insulator Technology: Materials to VLSI by : J.-P. Colinge

Download or read book Silicon-on-Insulator Technology: Materials to VLSI written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2004-02-29 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, also describes the properties of other SOI devices, such as multiple gate MOSFETs, dynamic threshold devices and power MOSFETs. The advantages and performance of SOI circuits used in both niche and mainstream applications are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition is recommended for use as a textbook for classes on semiconductor device processing and physics at the graduate level.

Fundamentals of Layout Design for Electronic Circuits

Author : Jens Lienig
Publisher : Springer Nature
ISBN 13 : 3030392848
Total Pages : 319 pages
Book Rating : 4.0/5 (33 download)

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Book Synopsis Fundamentals of Layout Design for Electronic Circuits by : Jens Lienig

Download or read book Fundamentals of Layout Design for Electronic Circuits written by Jens Lienig and published by Springer Nature. This book was released on 2020-03-19 with total page 319 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the fundamental knowledge of layout design from the ground up, addressing both physical design, as generally applied to digital circuits, and analog layout. Such knowledge provides the critical awareness and insights a layout designer must possess to convert a structural description produced during circuit design into the physical layout used for IC/PCB fabrication. The book introduces the technological know-how to transform silicon into functional devices, to understand the technology for which a layout is targeted (Chap. 2). Using this core technology knowledge as the foundation, subsequent chapters delve deeper into specific constraints and aspects of physical design, such as interfaces, design rules and libraries (Chap. 3), design flows and models (Chap. 4), design steps (Chap. 5), analog design specifics (Chap. 6), and finally reliability measures (Chap. 7). Besides serving as a textbook for engineering students, this book is a foundational reference for today’s circuit designers. For Slides and Other Information: https://www.ifte.de/books/pd/index.html

Wafer Bonding

Author : Marin Alexe
Publisher : Springer Science & Business Media
ISBN 13 : 3662108275
Total Pages : 510 pages
Book Rating : 4.6/5 (621 download)

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Book Synopsis Wafer Bonding by : Marin Alexe

Download or read book Wafer Bonding written by Marin Alexe and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.