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Silicon Carbide And Related Materials 2003
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Book Synopsis Silicon Carbide and Related Materials 2003 by : Roland Madar
Download or read book Silicon Carbide and Related Materials 2003 written by Roland Madar and published by Trans Tech Publications. This book was released on 2002 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use. This two-volume edition records the written versions of 364 contributed papers and 26 invited talks, presented at the Tenth International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), held in Lyon, France, from the 5th to the 10th October, 2003. A total of 19 different countries were represented. These proceedings give the latest overview of the fundamental topics which currently drive the development of a competitive SiC technology. They cover bulk and epitaxial growth, the properties of the resultant substrates and layers, and the processing issues involved in developing SiC electronic devices applications.
Book Synopsis Silicon Carbide and Related Materials, 2003 by : Roland Madar
Download or read book Silicon Carbide and Related Materials, 2003 written by Roland Madar and published by . This book was released on 2004 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use. This two-volume edition records the written versions of 364 contributed papers and 26 invited talks, presented at the Tenth International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), held in Lyon, France, from the 5th to the 10th October, 2003. A total of 19 different countries were represented. These proceedings give the latest overview of the fundamental topics which currently drive the development of a competitive SiC technology. They cover bulk and epitaxial growth, the properties of the resultant substrates and layers, and the processing issues involved in developing SiC electronic devices applications.
Book Synopsis Silicon Carbide and Related Materials by : Roland Madar
Download or read book Silicon Carbide and Related Materials written by Roland Madar and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide and Related Materials 2003 by : Roland Madar
Download or read book Silicon Carbide and Related Materials 2003 written by Roland Madar and published by Trans Tech Publications Ltd. This book was released on 2004-06-15 with total page 1548 pages. Available in PDF, EPUB and Kindle. Book excerpt: Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use. Volume is indexed by Thomson Reuters CPCI-S (WoS).
Book Synopsis Silicon Carbide and Related Materials 2003 by : R. Madar
Download or read book Silicon Carbide and Related Materials 2003 written by R. Madar and published by . This book was released on 2004 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide and Related Materials 2003 by : R. Madar
Download or read book Silicon Carbide and Related Materials 2003 written by R. Madar and published by . This book was released on 2003 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide and Related Materials 2003 by : R. Madar
Download or read book Silicon Carbide and Related Materials 2003 written by R. Madar and published by . This book was released on 2004 with total page 1660 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis 10th International Conference on Silicon Carbide and Related Materials by :
Download or read book 10th International Conference on Silicon Carbide and Related Materials written by and published by . This book was released on 2003 with total page 247 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis 10th International Conference on Silicon Carbide and Related Materials 2003 by :
Download or read book 10th International Conference on Silicon Carbide and Related Materials 2003 written by and published by . This book was released on 2004 with total page 247 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide and Related Materials by :
Download or read book Silicon Carbide and Related Materials written by and published by . This book was released on 2000 with total page 868 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide 2006--materials, Processing and Devices by : Michael Dudley
Download or read book Silicon Carbide 2006--materials, Processing and Devices written by Michael Dudley and published by . This book was released on 2006 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide 2004 - Materials, Processing and Devices: by : Michael Dudley
Download or read book Silicon Carbide 2004 - Materials, Processing and Devices: written by Michael Dudley and published by Cambridge University Press. This book was released on 2014-06-05 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) is a wide-bandgap semiconductor that can operate at temperatures well above 300ºC, where silicon cannot perform. In addition, due to a high thermal conductivity equal to copper at room temperature, SiC is an ideal candidate for operation in harsh environments and at high-power levels. Rapid advances in SiC materials and devices have recently resulted in implementation of SiC-based electronic systems, and the impact of these devices is expected to significantly increase in the next several years. This book documents the most recent results on growth of bulk and epitaxial layers, physical and structural properties, process technology, and device development obtained since the 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003) held in Lyon, France. Extended defects in silicon carbide are highlighted. The nature of defects induced by forward biasing of bipolar devices, as well as methods to suppress the degradation, are addressed.
Book Synopsis Sic Materials And Devices - Volume 1 by : Sergey Rumyantsev
Download or read book Sic Materials And Devices - Volume 1 written by Sergey Rumyantsev and published by World Scientific. This book was released on 2006-07-25 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Book Synopsis Silicon Carbide--materials, Processing and Devices by :
Download or read book Silicon Carbide--materials, Processing and Devices written by and published by . This book was released on 2002 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide 2002 - Materials, Processing and Devices: Volume 742 by : Stephen E. Saddow
Download or read book Silicon Carbide 2002 - Materials, Processing and Devices: Volume 742 written by Stephen E. Saddow and published by . This book was released on 2003-03-25 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.
Book Synopsis SiC Materials and Devices by : Michael Shur
Download or read book SiC Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2006 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Book Synopsis Silicon Carbide Power Devices by : B Jayant Baliga
Download or read book Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.
