Sige Bicmos Circuit And System Design And Characterization For Extreme Environment Applications

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SiGe BiCMOS Circuit and System Design and Characterization for Extreme Environment Applications

Author : Troy Daniel England
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (761 download)

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Book Synopsis SiGe BiCMOS Circuit and System Design and Characterization for Extreme Environment Applications by : Troy Daniel England

Download or read book SiGe BiCMOS Circuit and System Design and Characterization for Extreme Environment Applications written by Troy Daniel England and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis describes the architecture, verification, qualification, and packaging of a 16-channel silicon-germanium (SiGe) Remote Electronics Unit (REU) designed for use in extreme environment applications encountered on NASA's exploration roadmap. The SiGe REU was targeted for operation outside the protective electronic "vaults" in a lunar environment that exhibits cyclic temperature swings from -180o.C to 120o.C, a total ionizing dose (TID) radiation level of 100 krad, and heavy ion exposure (single event effects) over the mission lifetime. The REU leverages SiGe BiCMOS technological advantages and design methodologies, enabling exceptional extreme environment robustness. It utilizes a mixed-signal Remote Sensor Interface (RSI) ASIC and an HDL-based Remote Digital Control (RDC) architecture to read data from up to 16 sensors using three different analog channel types with customizable gain, current stimulus, calibration, and sample rate with 12-bit analog-to-digital conversion. The SiGe REU exhibits excellent channel sensitivity throughout the temperature range, hardness to at least 100 krad TID exposure, and single event latchup immunity, representing the cutting edge in cold-capable electronic systems. The SiGe REU is the first example within a potential paradigm shift in space-based electronics.

SiGe BiCMOS Phased-array Antenna Front-ends for Extreme Environment Applications

Author : Tushar K. Thrivikraman
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (74 download)

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Book Synopsis SiGe BiCMOS Phased-array Antenna Front-ends for Extreme Environment Applications by : Tushar K. Thrivikraman

Download or read book SiGe BiCMOS Phased-array Antenna Front-ends for Extreme Environment Applications written by Tushar K. Thrivikraman and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this research is to understand the design and performance of state-of-the-art silicon-germanium (SiGe) BiCMOS high-frequency circuits for phased- array radar and wireless communication systems operating in extreme environment conditions. This work investigates the performance of RF circuits over a wide- temperature and exposure to a radiation intensive environment. The design and characterization of a fully integrated transmit/receive (T/R) module and integra- tion onto a multi-element antenna array is presented. In addition, individual circuit blocks are characterized in these extreme environments.

Silicon-germanium BiCMOS Device and Circuit Design for Extreme Environment Applications

Author : Ryan M. Diestelhorst
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (456 download)

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Book Synopsis Silicon-germanium BiCMOS Device and Circuit Design for Extreme Environment Applications by : Ryan M. Diestelhorst

Download or read book Silicon-germanium BiCMOS Device and Circuit Design for Extreme Environment Applications written by Ryan M. Diestelhorst and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-germanium (SiGe) BiCMOS technology platforms have proven invaluable for implementing a wide variety of digital, RF, and mixed-signal applications in extreme environments such as space, where maintaining high levels of performance in the presence of low temperatures and background radiation is paramount. This work will focus on the investigation of the total-dose radiation tolerance of a third generation complementary SiGe:C BiCMOS technology platform. Tolerance will be quantified under proton and X-ray radiation sources for both the npn and pnp HBT, as well as for an operational amplifier built with these devices. Furthermore, a technique known as junction isolation radiation hardening will be proposed and tested with the goal of improving the SEE sensitivity of the npn in this platform by reducing the charge collected by the subcollector in the event of a direct ion strike. To the author's knowledge, this work presents the first design and measurement results for this form of RHBD.

Low-noise Circuitry for Extreme Environment Detection Systems Implemented in SiGe BiCMOS Technology

Author : Eleazar Walter Kenyon
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (825 download)

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Book Synopsis Low-noise Circuitry for Extreme Environment Detection Systems Implemented in SiGe BiCMOS Technology by : Eleazar Walter Kenyon

Download or read book Low-noise Circuitry for Extreme Environment Detection Systems Implemented in SiGe BiCMOS Technology written by Eleazar Walter Kenyon and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This work evaluates two SiGe BiCMOS technology platforms as candidates for implementing extreme environment capable circuitry, with an emphasis on applications requiring high sensitivity and low noise. In Chapter 1, applications requiring extreme environment sensing circuitry are briefly reviewed and the motivation for undertaking this study is outlined. A case is then presented for the use of SiGe BiCMOS technology to meet this need, documenting the benefits of operating SiGe HBTs at cryogenic temperatures. Chapter 1 concludes with a brief description of device radiation effects in bipolar and CMOS devices, and a basic overview of noise in semiconductor devices and electronic components. Chapter 2 further elaborates on a specific application requiring low-noise circuitry capable of operating at cryogenic temperatures and proposes a number of variants of band-gap reference circuits for use in said system. Detailed simulation and theoretical analysis of the proposed circuits are presented and compared with measurements, validating the techniques used in the proposed designs and emphasizing the need for further understanding of device level low-temperature noise phenomena. Chapter 3 evaluates the feasibility of using a SiGe BiCMOS process, whose response to ionizing radiation was previously uncharacterized, for use in unshielded electronic systems needed for exploration of deep space planets or moons, specifically targeting Europa mission requirements. Measured total ionizing dose (TID) responses for both CMOS and bipolar SiGe devices are presented and compared to similar technologies. The mechanisms responsible for device degradation are outlined, and an explanation of unexpected results is proposed. Finally, Chapter 4 summarizes the work presented and understanding provided by this thesis, concluding by outlining future research needed to build upon this study and fully realize SiGe based extreme environment capable precision electronic systems.

Operation of SiGe BiCMOS Technology Under Extreme Environments

Author : Tianbing Chen
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (631 download)

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Book Synopsis Operation of SiGe BiCMOS Technology Under Extreme Environments by : Tianbing Chen

Download or read book Operation of SiGe BiCMOS Technology Under Extreme Environments written by Tianbing Chen and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Operation of SiGe BiCMOS Technology Under Extreme Environments Tianbing Chen 96 pages Directed by Dr. John D. Cressler "Extreme environment electronics" represents an important niche market and spans the operation of electronic components in surroundings lying outside the domain of conventional commercial, or even military specifications. Such extreme environments would include, for instance, operation to very low temperatures (e.g., to 77 K or even 4.2 K), operation to very high temperatures (e.g., to 200 C or even 300 C), and operation in a radiation-rich environment (e.g., space). The suitability of SiGe BiCMOS technology for extreme environment electronics applications is assessed in this work. The suitability of SiGe HBTs for use in high-temperature electronics applications is first investigated. SiGe HBTs are shown to exhibit sufficient current gain, frequency response, breakdown voltage, achieve acceptable device reliability, and improved low-frequency noise, at temperatures as high as 200-300 C.A comprehensive investigation of substrate bias effects on device performance, thermal properties, and reliability of vertical SiGe HBTs fabricated on CMOS-compatible, thin-film SOI, is presented. The impact of 63 MeV protons on these vertical SiGe HBTs fabricated on a CMOS-compatible SOI is then investigated. Proton irradiation creates G/R trap centers in SOI SiGe HBTs, creating positive charge at the buried oxide interface, effectively delaying the onset of the Kirk effect at high current density, which increases the frequency response of SOI SiGe HBTs following radiation. The thermodynamic stability of device-relevant epitaxial SiGe strained layers under proton irradiation is also investigated using x-ray diffraction techniques. Irradiation with 63 MeV protons is found to introduce no significant microdefects into the SiGe thin films, regardless of the starting stability condition of the SiGe film, and thus does not appear to be an issue for the use of SiGe HBT technology in emerging space systems. CMOS device reliability for emerging cryogenic space electronics applications is also assessed. CMOS device performance improves with cooling, however, CMOS device reliability becomes worse at decreased temperatures due to aggravated hot-carrier effects. The device lifetime is found to be a strong function of gate length, suggesting that design tradeoffs are inevitable.

Fabrication of SiGe HBT BiCMOS Technology

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1351834789
Total Pages : 321 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis Fabrication of SiGe HBT BiCMOS Technology by : John D. Cressler

Download or read book Fabrication of SiGe HBT BiCMOS Technology written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else’s SiGe fab as foundry for their designers. Key to this success lies in successful integration of the SiGe HBT and Si CMOS, with no loss of performance from either device. Filled with contributions from leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings together a complete discussion of these topics into a single resource. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Interface Circuit Designs for Extreme Environments Using Sige Bicmos Technology

Author : Steven Ernest Finn
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (268 download)

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Book Synopsis Interface Circuit Designs for Extreme Environments Using Sige Bicmos Technology by : Steven Ernest Finn

Download or read book Interface Circuit Designs for Extreme Environments Using Sige Bicmos Technology written by Steven Ernest Finn and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe BiCMOS technology has many advantageous properties that, when leveraged, enable circuit design for extreme environments. This work will focus on designs targeted for space system avioinics platforms under the NASA ETDP program. The program specifications include operation under temperatures ranging from -180 C to +125 C and with radiation tolerance up to total ionizing dose of 100 krad with built-in single-event latch-up tolerance. To the author's knowledge, this work presents the first design and measurement of a wide temperature range enabled, radiation tolerant as built, RS-485 wireline transceiver in SiGe BiCMOS technology. This work also includes design and testing of a charge amplification channel front-end intended to act as the interface between a piezoelectric sensor and an ADC. An additional feature is the design and testing of a 50 Ohm output buffer utilized for testing of components in a lab setting.

Design and Analysis of Low-power Millimeter-wave SiGe BiCMOS Circuits with Application to Network Measurement Systems

Author : Yaxin Zhang
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (133 download)

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Book Synopsis Design and Analysis of Low-power Millimeter-wave SiGe BiCMOS Circuits with Application to Network Measurement Systems by : Yaxin Zhang

Download or read book Design and Analysis of Low-power Millimeter-wave SiGe BiCMOS Circuits with Application to Network Measurement Systems written by Yaxin Zhang and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Extreme Environment Electronics

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 143987431X
Total Pages : 1041 pages
Book Rating : 4.4/5 (398 download)

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Book Synopsis Extreme Environment Electronics by : John D. Cressler

Download or read book Extreme Environment Electronics written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 1041 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.

Silicon-germanium BiCMOS and Silicon-on-insulator CMOS Analog Circuits for Extreme Environment Applications

Author : Troy Daniel England
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (893 download)

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Book Synopsis Silicon-germanium BiCMOS and Silicon-on-insulator CMOS Analog Circuits for Extreme Environment Applications by : Troy Daniel England

Download or read book Silicon-germanium BiCMOS and Silicon-on-insulator CMOS Analog Circuits for Extreme Environment Applications written by Troy Daniel England and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Extreme environments pose major obstacles for electronics in the form of extremely wide temperature ranges and hazardous radiation. The most common mitigation procedures involve extensive shielding and temperature control or complete displacement from the environment with high costs in weight, power, volume, and performance. There has been a shift away from these solutions and towards distributed, in-environment electronic systems. However, for this methodology to be viable, the requirements of heavy radiation shielding and temperature control have to be lessened or eliminated. This work gained new understanding of the best practices in analog circuit design for extreme environments. Major accomplishments included the over-temperature -180 C to +120 C and radiation validation of the SiGe Remote Electronics Unit, a first of its kind, 16 channel, sensor interface for unshielded operation in the Lunar environment, the design of two wide-temperature ( -180 C to +120 C), total-ionizing-dose hardened, wireline transceivers for the Lunar environment, the low-frequency-noise characterization of a second-generation BiCMOS process from 300 K down to 90 K, the explanation of the physical mechanisms behind the single-event transient response of cascode structures in a 45 nm, SOI, radio-frequency, CMOS technology, the analysis of the single-event transient response of differential structures in a 32 nm, SOI, RF, CMOS technology, and the prediction of scaling trends of single-event effects in SOI CMOS technologies.

The Design of SiGe Integrated Circuit Components for Extreme Environment Systems and Sensors

Author : Ryan Matthew Diestelhorst
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (88 download)

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Book Synopsis The Design of SiGe Integrated Circuit Components for Extreme Environment Systems and Sensors by : Ryan Matthew Diestelhorst

Download or read book The Design of SiGe Integrated Circuit Components for Extreme Environment Systems and Sensors written by Ryan Matthew Diestelhorst and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A background investigation of the total-dose radiation tolerance of a third generation complementary SiGe:C BiCMOS technology platform was performed. Tolerance was quantified under proton and X-ray radiation sources for both the npn and pnp HBT, as well as for an operational amplifier built with these devices. Furthermore, a technique known as junction isolation radiation hardening was proposed and tested with the goal of improving the SEE sensitivity of the npn by reducing the charge collected by the subcollector in the event of a direct ion strike. : Three independent systems were designed, including: 1) a charge amplification channel developed as part of a remote electronics unit for the lunar environment, 2) variable bias circuitry for a self-healing radar receiver, and 3) an ultra-fast x-ray detector for picosecond scale time-domain measurements of evolving chemical reactions. The first two projects capitalized on the wide-temperature performance and radiation tolerance of the SiGe HBT, allowing them to operate under extreme environmental conditions reliably and consistently. The third design makes use of the high-frequency capabilities of the HBT, particularly in emitter-coupled logic (ECL) configurations. Findings concerning the performance of these systems and implications for future research are discussed.

Silicon Germanium

Author : Raminderpal Singh
Publisher : John Wiley & Sons
ISBN 13 : 0471660914
Total Pages : 368 pages
Book Rating : 4.4/5 (716 download)

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Book Synopsis Silicon Germanium by : Raminderpal Singh

Download or read book Silicon Germanium written by Raminderpal Singh and published by John Wiley & Sons. This book was released on 2004-03-15 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: "An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications." -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it." -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to: * Detail many of IBM's SiGe technology development programs * Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling * Discuss IBM's design automation and signal integrity knowledge and implementation methodologies * Illustrate design applications in a variety of IBM's SiGe technologies * Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe process technologies and design kits. "This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development." -Ron Wilson Silicon Engineering Editor, EETimes "This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods." -John Kelly Senior Vice President and Group Executive, Technology Group, IBM

Analysis and Characterization of a SiGe BiCMOS Low Power Operational Amplfier

Author :
Publisher :
ISBN 13 :
Total Pages : 68 pages
Book Rating : 4.:/5 (259 download)

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Book Synopsis Analysis and Characterization of a SiGe BiCMOS Low Power Operational Amplfier by :

Download or read book Analysis and Characterization of a SiGe BiCMOS Low Power Operational Amplfier written by and published by . This book was released on 2007 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: Integrated circuit design for space applications can require radiation immunity, cryogenic operation and low power consumption. This thesis provides analysis and characterization of a SiGe BiCMOS low power operational amplifier (op amp) designed for lunar surface applications. The op amp has been fabricated on a commercially available 0.35-micron Silicon-Germanium (SiGe) BiCMOS process. The Heterojunction bipolar transistors (HBT) available in the SiGe process have been used in this op amp to take advantage of the total ionizing dose (TID) irradiation immunity and superb cryogenic operation, along with PMOS devices that show better TID immunity than their NMOS counterparts. The key features of the op amp include rail-to-rail output voltage swing, low input offset voltage, high open-loop gain and low supply current. The characterization of op amp is done for extreme temperatures and the results demonstrate that the op amp is fully functional across the lunar surface temperature range of -180°C to +120°C. The wide temperature operation of this op amp is tested using different bias current techniques such as proportional-to-absolute-temperature current, constant current and constant inversion coefficient current sources to investigate optimal biasing strategies for BiCMOS analog design. In addition, the SiGe BiCMOS low power op amp provides lower power consumption with the same or better unity-gain bandwidth when compared to a CMOS op amp with similar circuit topology.

BiCMOS Integrated Circuit Design

Author : IEEE Solid-State Circuits Council
Publisher : Piscataway, N.J. : IEEE Press
ISBN 13 :
Total Pages : 536 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis BiCMOS Integrated Circuit Design by : IEEE Solid-State Circuits Council

Download or read book BiCMOS Integrated Circuit Design written by IEEE Solid-State Circuits Council and published by Piscataway, N.J. : IEEE Press. This book was released on 1994 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt: This up-to-date book, with its introductory tutorial, provides extensive coverage on BiCMOS, potentially the most important silicon technology of the 1990's. Many commercial products are currently utilizing BiCMOS ICs and an exponential growth is expected. Elmasry provides the latest information on processing technologies, circuit analysis, and techniques, and applications in the areas of analog, digital, and smart power. BiCMOS Integrated Circuit Design is an important guide for engineers working in BiCMOS processing, modeling, characterization, circuit design, and applications, as well as a valuable learning tool for college seniors and graduate students.

Reconfigurable Amplifiers and Circuit Components for Built-in-self Testing and Self-healing in SiGe BiCMOS Technology

Author : Duane Clarence Howard
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (893 download)

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Book Synopsis Reconfigurable Amplifiers and Circuit Components for Built-in-self Testing and Self-healing in SiGe BiCMOS Technology by : Duane Clarence Howard

Download or read book Reconfigurable Amplifiers and Circuit Components for Built-in-self Testing and Self-healing in SiGe BiCMOS Technology written by Duane Clarence Howard and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The design of reconfigurable microwave and millimeter-wave circuit components and on-chip testing circuitry are demonstrated. These components are designed to enable the mitigation of process faults, aging, radiation effects, and other mechanisms that lead to performance degradation in circuits and systems. The presented work is primarily based on SiGe HBTs in BiCMOS technology and harnesses the inherent resilience of SiGe to mechanisms that degrade transistor performance. However, CMOS FETs are also used in limited applications, such as in the design of switches, op-amps, and DACs. Individual circuit blocks and circuit systems are characterized with the aim of evaluating their performance under nominal conditions as well as in the context of extreme environments and other deleterious phenomena.

Frequency Synthesis Applications of SiGe BiCMOS Processes

Author : Stephen J. Horst
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (794 download)

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Book Synopsis Frequency Synthesis Applications of SiGe BiCMOS Processes by : Stephen J. Horst

Download or read book Frequency Synthesis Applications of SiGe BiCMOS Processes written by Stephen J. Horst and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Germanium BiCMOS technology has been demonstrated as an ideal platform for highly integrated systems requiring both high performance analog and RF circuits as well as large-scale digital functionality. Frequency synthesizers are ideal candidates for this technology because the mixed-signal nature of modern frequency synthesis designs fundamentally requires both digital and analog signal processing. This research targets three areas to improve SiGe frequency synthesizers. A majority of this work focuses on applying SiGe frequency synthesizers to extreme environment applications such as space, where low temperatures and ionizing radiation are significant design issues to contend with. A second focus area involves using SiGe HBTs to minimize noise in frequency synthesizer circuits. Improved low frequency "pink" noise in SiGe HBTs provide a significant advantage over CMOS devices, and frequency synthesis circuits are significantly affected by this type of noise. However, improving thermal "white" noise is also considered. Finally, an analysis of AM-PM distortion is considered for SiGe HBTs. The studies presented focus on identifying the physical mechanisms of observed phenomena, such as single event transients or phase noise characteristics in oscillators. The ultimate goal of this research is to provide a reference of effective design parameters for circuit and system designers seeking to take advantage of the properties of SiGe device physics.

Predictive Modeling of Device and Circuit Reliability in Highly Scaled CMOS and SiGe BiCMOS Technology

Author : Kurt Andrew Moen
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (825 download)

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Book Synopsis Predictive Modeling of Device and Circuit Reliability in Highly Scaled CMOS and SiGe BiCMOS Technology by : Kurt Andrew Moen

Download or read book Predictive Modeling of Device and Circuit Reliability in Highly Scaled CMOS and SiGe BiCMOS Technology written by Kurt Andrew Moen and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The advent of high-frequency silicon-based technologies has enabled the design of mixed-signal circuits that incorporate analog, RF, and digital circuit components to build cost-effective system-on-a-chip solutions. Emerging applications provide great incentive for continued scaling of transistor performance, requiring careful attention to mismatch, noise, and reliability concerns. If these mixed-signal technologies are to be employed within space-based electronic systems, they must also demonstrate reliability in radiation-rich environments. SiGe BiCMOS technology in particular is positioned as an excellent candidate to satisfy all of these requirements. The objective of this research is to develop predictive modeling tools that can be used to design new mixed-signal technologies and assess their reliability on Earth and in extreme environments. Ultimately, the goal is to illuminate the interaction of device- and circuit-level reliability mechanisms and establish best practices for modeling these effects in modern circuits. To support this objective, several specific areas have been targeted first, including a TCAD-based approach to identify performance-limiting regions in SiGe HBTs, measurement and modeling of carrier transport parameters that are essential for predictive TCAD, and measurement of device-level single-event transients to better understand the physical origins and implications for device design. These tasks provide the foundation for the bulk of this research, which addresses circuit-level reliability challenges through the application of novel mixed-mode TCAD techniques. All of the individual tasks are tied together by a guiding theme: to develop a holistic understanding of the challenges faced by emerging broadband technologies by coordinating results from material, device, and circuit studies.