Semiconductor/dielectric Interface Engineering and Characterization

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Publisher :
ISBN 13 :
Total Pages : 242 pages
Book Rating : 4.:/5 (97 download)

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Book Synopsis Semiconductor/dielectric Interface Engineering and Characterization by : Antonio T. Lucero

Download or read book Semiconductor/dielectric Interface Engineering and Characterization written by Antonio T. Lucero and published by . This book was released on 2016 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: The focus of this dissertation is the application and characterization of several, novel interface passivation techniques for III-V semiconductors, and the development of an in-situ electrical characterization. Two different interface passivation techniques were evaluated. The first is interface nitridation using a nitrogen radical plasma source. The nitrogen radical plasma generator is a unique system which is capable of producing a large flux of N-radicals free of energetic ions. This was applied to Si and the surface was studied using x-ray photoelectron spectroscopy (XPS). Ultra-thin nitride layers could be formed from 200-400° C. Metal-oxide-semiconductor capacitors (MOSCAPs) were fabricated using this passivation technique. Interface nitridation was able to reduce leakage current and improve the equivalent oxide thickness of the devices. The second passivation technique studied is the atomic layer deposition (ALD) diethylzinc (DEZ)/water treatment of sulfur treated InGaAs and GaSb. On InGaAs this passivation technique is able to chemically reduce higher oxidation states on the surface, and the process results in the deposition of a ZnS/ZnO interface passivation layer, as determined by XPS. Capacitance-voltage (C-V) measurements of MOSCAPs made on p-InGaAs reveal a large reduction in accumulation dispersion and a reduction in the density of interfacial traps. The same technique was applied to GaSb and the process was studied in an in-situ half-cycle XPS experiment. DEZ/H2O is able to remove all Sb-S from the surface, forming a stable ZnS passivation layer. This passivation layer is resistant to further reoxidation during dielectric deposition. The final part of this dissertation is the design and construction of an ultra-high vacuum cluster tool for in-situ electrical characterization. The system consists of three deposition chambers coupled to an electrical probe station. With this setup, devices can be processed and subsequently electrically characterized without exposing the sample to air. This is the first time that such a system has been reported. A special air-gap C-V probe will allow top gated measurements to be made, allowing semiconductor-dielectric interfaces to be studied during device processing.

High-k Gate Dielectric Materials

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Publisher : CRC Press
ISBN 13 : 1000517764
Total Pages : 246 pages
Book Rating : 4.0/5 (5 download)

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Book Synopsis High-k Gate Dielectric Materials by : Niladri Pratap Maity

Download or read book High-k Gate Dielectric Materials written by Niladri Pratap Maity and published by CRC Press. This book was released on 2020-12-18 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.

Electronic Properties of Semiconductor Interfaces

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Publisher : Springer Science & Business Media
ISBN 13 : 3662069458
Total Pages : 269 pages
Book Rating : 4.6/5 (62 download)

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Book Synopsis Electronic Properties of Semiconductor Interfaces by : Winfried Mönch

Download or read book Electronic Properties of Semiconductor Interfaces written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

Organic Thin Film Transistor Integration

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Publisher : John Wiley & Sons
ISBN 13 : 3527634452
Total Pages : 258 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis Organic Thin Film Transistor Integration by : Flora Li

Download or read book Organic Thin Film Transistor Integration written by Flora Li and published by John Wiley & Sons. This book was released on 2011-03-21 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research on organic electronics (or plastic electronics) is driven by the need to create systems that are lightweight, unbreakable, and mechanically flexible. With the remarkable improvement in the performance of organic semiconductor materials during the past few decades, organic electronics appeal to innovative, practical, and broad-impact applications requiring large-area coverage, mechanical flexibility, low-temperature processing, and low cost. Thus, organic electronics appeal to a broad range of electronic devices and products including transistors, diodes, sensors, solar cells, lighting, displays, and electronic identification and tracking devices A number of commercial opportunities have been identified for organic thin film transistors (OTFTs), ranging from flexible displays, electronic paper, radio-frequency identification (RFID) tags, smart cards, to low-cost disposable electronic products, and more are continually being invented as the technology matures. The potential applications for "plastic electronics" are huge but several technological hurdles must be overcome. In many of these applications, transistor serves as a fundamental building block to implement the necessary electronic functionality. Hence, research in organic thin film transistors (OTFTs) or organic field effect transistors (OFETs) is eminently pertinent to the development and realization of organic electronics. This book presents a comprehensive investigation of the production and application of a variety of polymer based transistor devices and circuits. It begins with a detailed overview of Organic Thin Film Transistors (OTFTs) and discusses the various possible fabrication methods reported so far. This is followed by two major sections on the choice, optimization and implementation of the gate dielectric material to be used. Details of the effects of processing on the efficiency of the contacts are then provided. The book concludes with a chapter on the integration of such devices to produce a variety of OTFT based circuits and systems. The key objective is to examine strategies to exploit existing materials and techniques to advance OTFT technology in device performance, device manufacture, and device integration. Finally, the collective knowledge from these investigations facilitates the integration of OTFTs into organic circuits, which is expected to contribute to the development of new generation of all-organic displays for communication devices and other pertinent applications. Overall, a major outcome of this work is that it provides an economical means for organic transistor and circuit integration, by enabling the use of a well-established PECVD infrastructure, while not compromising the performance of electronics. The techniques established here are not limited to use in OTFTs only; the organic semiconductor and SiNx combination can be used in other device structures (e.g., sensors, diodes, photovoltaics). Furthermore, the approach and strategy used for interface optimization can be extended to the development of other materials systems.

Electrical Characterization of Silicon-on-Insulator Materials and Devices

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Publisher : Springer Science & Business Media
ISBN 13 : 1461522455
Total Pages : 389 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis Electrical Characterization of Silicon-on-Insulator Materials and Devices by : Sorin Cristoloveanu

Download or read book Electrical Characterization of Silicon-on-Insulator Materials and Devices written by Sorin Cristoloveanu and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.

Surface and Interface Investigation of Novel Materials for Future Applications in Logic and Memory Devices

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Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (126 download)

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Book Synopsis Surface and Interface Investigation of Novel Materials for Future Applications in Logic and Memory Devices by : Ava Khosravi

Download or read book Surface and Interface Investigation of Novel Materials for Future Applications in Logic and Memory Devices written by Ava Khosravi and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Layered Transition Metal Dichalcogenides (TMDs) and Ferroelectric Hf0.5Zr0.5O2 (HZO) are the novel material systems investigated in this work for future applications in logic and memory technologies. Semiconductor TMDs exhibited promising electrical properties for device applications beyond silicon-based electronics. For the implementation of semiconductor TMDs into nano-electronic devices, challenges like a viable doping approach and a high-quality semiconductor-dielectric interface need to be addressed. This work provides surface engineering techniques to overcome the doping and dielectric deposition challenges for WSe2 and ReS2. Insitu XPS, AFM, and Raman are among the characterization techniques employed in this work to provide a thorough surface and interface analysis of WSe2 and ReS2. HZO thin films are considered potential materials for future ferroelectric memory devices because of being highly scalable and compatible with CMOS technology. Integration of ferroelectric HZO thin films into the commercial ferroelectric random-access memory (Fe-RAM) and ferroelectric field-effect transistor (Fe-FET) still needs considerable improvement. Therefore, the fundamental study of the evolution of the HZO interfaces remains to be systematically characterized. In this work, the HZO deposition process on metal and semiconductor is therefore investigated in detail by interrupting the ALD growth cycle and in-situ surface characterization using monochromatic XPS.

Guide To Semiconductor Engineering

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Publisher : World Scientific
ISBN 13 : 9811216010
Total Pages : 298 pages
Book Rating : 4.8/5 (112 download)

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Book Synopsis Guide To Semiconductor Engineering by : Jerzy Ruzyllo

Download or read book Guide To Semiconductor Engineering written by Jerzy Ruzyllo and published by World Scientific. This book was released on 2020-03-10 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Guide to Semiconductor Engineering is concerned with semiconductor materials, devices and process technologies which in combination constitute an enabling force behind the growth of our technical civilization. This book was conceived and written keeping in mind those who need to learn about semiconductors, who are professionally associated with select aspects of this technical domain and want to see it in a broader context, or for those who are simply interested in state-of-the-art semiconductor engineering. In its coverage of semiconductor properties, materials, devices, manufacturing technology, and characterization methods, this Guide departs from textbook-style, monothematic in-depth discussions of each topic. Instead, it considers the entire broad field of semiconductor technology and identifies synergistic interactions within various areas in one concise volume. It is a holistic approach to the coverage of semiconductor engineering which distinguishes this Guide among other books concerned with semiconductors related issues.

Materials for Information Technology

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Publisher : Springer Science & Business Media
ISBN 13 : 1846282357
Total Pages : 498 pages
Book Rating : 4.8/5 (462 download)

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Book Synopsis Materials for Information Technology by : Ehrenfried Zschech

Download or read book Materials for Information Technology written by Ehrenfried Zschech and published by Springer Science & Business Media. This book was released on 2006-07-02 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an up to date survey of the state of the art of research into the materials used in information technology, and will be bought by researchers in universities, institutions as well as research workers in the semiconductor and IT industries.

Optical Characterization of Semiconductors

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Publisher : Elsevier
ISBN 13 : 0080984274
Total Pages : 229 pages
Book Rating : 4.0/5 (89 download)

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Book Synopsis Optical Characterization of Semiconductors by : Sidney Perkowitz

Download or read book Optical Characterization of Semiconductors written by Sidney Perkowitz and published by Elsevier. This book was released on 2012-12-02 with total page 229 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to explain, illustrate, and compare the most widely used methods in optics: photoluminescence, infrared spectroscopy, and Raman scattering. Written with non-experts in mind, the book develops the background needed to understand the why and how of each technique, but does not require special knowledge of semiconductors or optics. Each method is illustrated with numerous case studies. Practical information drawn from the authors experience is given to help establish optical facilities, including commercial sources for equipment, and experimental details. For industrial scientists with specific problems in semiconducting materials; for academic scientists who wish to apply their spectroscopic methods to characterization problems; and for students in solid state physics, materials science and engineering, and semiconductor electronics and photonics, this book provides a unique overview, bringing together these valuable techniques in a coherent wayfor the first time. Discusses and compares infrared, Raman, and photoluminescence methods Enables readers to choose the best method for a given problem Illustrates applications to help non-experts and industrial users, with answers to selected common problems Presents fundamentals with examples from the semiconductor literature without excessive abstract discussion Features equipment lists and discussion of techniques to help establish characterization laboratories

Semiconductor Material and Device Characterization

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Publisher : Wiley-Interscience
ISBN 13 : 0471749087
Total Pages : 800 pages
Book Rating : 4.4/5 (717 download)

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Book Synopsis Semiconductor Material and Device Characterization by : Dieter K. Schroder

Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by Wiley-Interscience. This book was released on 2006-02-10 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Interface Engineering in Organic Field-Effect Transistors

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Publisher : John Wiley & Sons
ISBN 13 : 3527840478
Total Pages : 277 pages
Book Rating : 4.5/5 (278 download)

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Book Synopsis Interface Engineering in Organic Field-Effect Transistors by : Xuefeng Guo

Download or read book Interface Engineering in Organic Field-Effect Transistors written by Xuefeng Guo and published by John Wiley & Sons. This book was released on 2023-07-05 with total page 277 pages. Available in PDF, EPUB and Kindle. Book excerpt: Interface Engineering in Organic Field-Effect Transistors Systematic summary of advances in developing effective methodologies of interface engineering in organic field-effect transistors, from models to experimental techniques Interface Engineering in Organic Field-Effect Transistors covers the state of the art in organic field-effect transistors and reviews charge transport at the interfaces, device design concepts, and device fabrication processes, and gives an outlook on the development of future optoelectronic devices. This book starts with an overview of the commonly adopted methods to obtain various semiconductor/semiconductor interfaces and charge transport mechanisms at these heterogeneous interfaces. Then, it covers the modification at the semiconductor/electrode interfaces, through which to tune the work function of electrodes as well as reveal charge injection mechanisms at the interfaces. Charge transport physics at the semiconductor/dielectric interface is discussed in detail. The book describes the remarkable effect of SAM modification on the semiconductor film morphology and thus the electrical performance. In particular, valuable analyses of charge trapping/detrapping engineering at the interface to realize new functions are summarized. Finally, the sensing mechanisms that occur at the semiconductor/environment interfaces of OFETs and the unique detection methods capable of interfacing organic electronics with biology are discussed. Specific sample topics covered in Interface Engineering in Organic Field-Effect Transistors include: Noncovalent modification methods, charge insertion layer at the electrode surface, dielectric surface passivation methods, and covalent modification methods Charge transport mechanism in bulk semiconductors, influence of additives on materials’ nucleation and morphology, solvent additives, and nucleation agents Nanoconfinement effect, enhancing the performance through semiconductor heterojunctions, planar bilayer heterostructure, ambipolar charge-transfer complex, and supramolecular arrangement of heterojunctions Dielectric effect in OFETs, dielectric modification to tune semiconductor morphology, surface energy control, microstructure design, solution shearing, eliminating interfacial traps, and SAM/SiO2 dielectrics A timely resource providing the latest developments in the field and emphasizing new insights for building reliable organic electronic devices, Interface Engineering in Organic Field-Effect Transistors is essential for researchers, scientists, and other interface-related professionals in the fields of organic electronics, nanoelectronics, surface science, solar cells, and sensors.

Materials and Processes for Surface and Interface Engineering

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Publisher : Springer Science & Business Media
ISBN 13 : 9401100772
Total Pages : 652 pages
Book Rating : 4.4/5 (11 download)

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Book Synopsis Materials and Processes for Surface and Interface Engineering by : Y. Pauleau

Download or read book Materials and Processes for Surface and Interface Engineering written by Y. Pauleau and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt: Materials and Processes for Surface and Interface Engineering, which has been written by experts in the fields of deposition technology and surface modification techniques, offers up to date tutorial papers on the latest advances in surface and interface engineering. The emphasis is on fundamental aspects, principles and applications of plasma and ion beam processing technology. A handbook for the engineer and scientist as well as an introduction for students in several branches of materials science and surface engineering.

Dielectric Films for Advanced Microelectronics

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Publisher : John Wiley & Sons
ISBN 13 : 0470065419
Total Pages : 508 pages
Book Rating : 4.4/5 (7 download)

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Book Synopsis Dielectric Films for Advanced Microelectronics by : Mikhail Baklanov

Download or read book Dielectric Films for Advanced Microelectronics written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2007-04-04 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.

High Permittivity Gate Dielectric Materials

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Publisher : Springer Science & Business Media
ISBN 13 : 3642365353
Total Pages : 515 pages
Book Rating : 4.6/5 (423 download)

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Book Synopsis High Permittivity Gate Dielectric Materials by : Samares Kar

Download or read book High Permittivity Gate Dielectric Materials written by Samares Kar and published by Springer Science & Business Media. This book was released on 2013-06-25 with total page 515 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .

Nano-CMOS Gate Dielectric Engineering

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Publisher : CRC Press
ISBN 13 : 1439849609
Total Pages : 248 pages
Book Rating : 4.4/5 (398 download)

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Book Synopsis Nano-CMOS Gate Dielectric Engineering by : Hei Wong

Download or read book Nano-CMOS Gate Dielectric Engineering written by Hei Wong and published by CRC Press. This book was released on 2017-12-19 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: According to Moore’s Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devices, and fabrication processes for high-k gate dielectric materials, Nano-CMOS Gate Dielectric Engineering systematically describes how the fundamental electronic structures and other material properties of the transition metals and rare earth metals affect the electrical properties of the dielectric films, the dielectric/silicon and the dielectric/metal gate interfaces, and the resulting device properties. Specific topics include the problems and solutions encountered with high-k material thermal stability, defect density, and poor initial interface with silicon substrate. The text also addresses the essence of thin film deposition, etching, and process integration of high-k materials in an actual CMOS process. Fascinating in both content and approach, Nano-CMOS Gate Dielectric Engineering explains all of the necessary physics in a highly readable manner and supplements this with numerous intuitive illustrations and tables. Covering almost every aspect of high-k gate dielectric engineering for nano-CMOS technology, this is a perfect reference book for graduate students needing a better understanding of developing technology as well as researchers and engineers needing to get ahead in microelectronic engineering and materials science.

Characterization of Semiconductor Heterostructures and Nanostructures

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Author :
Publisher : Elsevier Inc. Chapters
ISBN 13 : 0128083352
Total Pages : 88 pages
Book Rating : 4.1/5 (28 download)

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Book Synopsis Characterization of Semiconductor Heterostructures and Nanostructures by : Maria Peressi

Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Maria Peressi and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:

NISTIR.

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Publisher :
ISBN 13 :
Total Pages : 62 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis NISTIR. by :

Download or read book NISTIR. written by and published by . This book was released on 2001 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt: