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Schottky Barrier Height Control At Epitaxial Nial
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Book Synopsis Schottky Barrier Height Control at Epitaxial NiAl by :
Download or read book Schottky Barrier Height Control at Epitaxial NiAl written by and published by . This book was released on 1992 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent developments in the use of interlayers to tailor the Schottky barrier height (SBH) at a metal/GaAs interface are discussed. The goal has been to gain control of band bending in the interfacial region by modifying both the interface Fermi energy and the charge density in the depletion region. The approach has been to grow both the interlayer and the metal overlayer under ultrahigh vacuum conditions by molecular beam epitaxy, and then to determine the chemistry of interface formation, structure, and band bending by x-ray photoelectron spectroscopy and diffraction and by low-energy electron diffraction. The interface Fermi energy can be changed from the usual midgap value of 0.7--0.8 eV relative to the band edge by the use of epitaxial transition metal aluminide (TMA) overlayers such as NiAl. The unique chemistry of interface formation between this intermetallic compound and GaAs pins the Fermi level [approximately]0.3--0.4 eV above the valence band maximum, and results in a SBH of [approximately]1 eV. The SBH can be increased to [approximately]1.2 eV by the use of a wide bandgap interlayer such as AlAs. The charge density in the depletion region can be changed by growing an n[sup +]-type group IV interlayer between the TMA overlayer and GaAs substrate. Charge transfer from the interlayer to an n-type substrate reduces the space charge density, and thereby lowers the band bending and, thus, the SBH to [approximately]0.5 eV. The use of these interlayers then produces a range of SBH values of [approximately]0.7 eV, which is a significant improvement over the rather narrow range of 0.1--0.2 eV that results from conventional metallizations. The fundamental interface science that underpins these results is discussed, and an application to complementary digital GaAs circuit design that may significantly reduce gate leakage is given.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1993 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Structure and Schottky barrier height of epitaxial silicide silicon interfaces by : Johannes Vrijmoeth
Download or read book Structure and Schottky barrier height of epitaxial silicide silicon interfaces written by Johannes Vrijmoeth and published by . This book was released on 1991 with total page 117 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA by : Gerald B. Stringfellow
Download or read book Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA written by Gerald B. Stringfellow and published by CRC Press. This book was released on 2020-11-25 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Book Synopsis Ceramic Abstracts by : American Ceramic Society
Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1995 with total page 1150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electronic, Optical and Device Properties of Layered Structures by : John R. Hayes
Download or read book Electronic, Optical and Device Properties of Layered Structures written by John R. Hayes and published by . This book was released on 1990 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Arsenide and Related Compounds by :
Download or read book Gallium Arsenide and Related Compounds written by and published by . This book was released on 1991 with total page 840 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Government Reports Announcements & Index by :
Download or read book Government Reports Announcements & Index written by and published by . This book was released on 1993-06 with total page 1392 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Government Reports Annual Index by :
Download or read book Government Reports Annual Index written by and published by . This book was released on 1993 with total page 1300 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Structural Characterization of Novel Semiconductor Heterostructures by : Jane Guizhen Zhu
Download or read book Growth and Structural Characterization of Novel Semiconductor Heterostructures written by Jane Guizhen Zhu and published by . This book was released on 1991 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1989 with total page 1606 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1990 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the 16th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces by :
Download or read book Proceedings of the 16th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces written by and published by . This book was released on 1989 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electronic Structure and Properties of Semiconductors by : Wolfgang Schröter
Download or read book Electronic Structure and Properties of Semiconductors written by Wolfgang Schröter and published by . This book was released on 1991 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Encyclopedia of Materials by : K. H. J. Buschow
Download or read book Encyclopedia of Materials written by K. H. J. Buschow and published by . This book was released on 2001 with total page 1120 pages. Available in PDF, EPUB and Kindle. Book excerpt: Accompanyind CR-ROM conrtains The Encyclopedia of Materials Science and Technology on a web access disc.
Book Synopsis Concise Encyclopedia of Semiconducting Materials & Related Technologies by : S. Mahajan
Download or read book Concise Encyclopedia of Semiconducting Materials & Related Technologies written by S. Mahajan and published by Elsevier. This book was released on 2013-10-22 with total page 607 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of electronic materials and particularly advances in semiconductor technology have played a central role in the electronics revolution by allowing the production of increasingly cheap and powerful computing equipment and advanced telecommunications devices. This Concise Encyclopedia, which incorporates relevant articles from the acclaimed Encyclopedia of Materials Science and Engineering as well as newly commissioned articles, emphasizes the materials aspects of semiconductors and the technologies important in solid-state electronics. Growth of bulk crystals and epitaxial layers are discussed in the volume and coverage is included of defects and their effects on device behavior. Metallization and passivation issues are also covered. Over 100 alphabetically arranged articles, written by world experts in the field, are each intended to serve as the first source of information on a particular aspect of electronic materials. The volume is extensively illustrated with photographs, diagrams and tables. A bibliography is provided at the end of each article to guide the reader to recent literature. A comprehensive system of cross-references, a three-level subject index and an alphabetical list of articles are included to aid readers in the abstraction of information.
